CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw- down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz. PPNa:c CkGagHe5 T5y0p1e5:P 424 0&1 C9G6H &5 54041051F626 FEATURES APPLICATIONS • 4.5 to 6.0 GHz Operation • 2-Way Private Radio • 12 dB Small Signal Gain at 5.65 GHz • Broadband Amplifiers • 13 W typical P • Cellular Infrastructure SAT • 60 % Efficiency at P • Test Instrumentation SAT • 28 V Operation • Class A, AB Amplifiers for Drivers and Gain Blocks 5 1 0 2 y a M – 0 .4 v e R Subject to change without notice. 1 www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 4.0 mA 25˚C GMAX Maximum Drain Current1 I 1.5 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 60 in-oz Thermal Resistance, Junction to Case3 R 8.0 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55015 at P = 14W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 200 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 3.6 mA BR DC GS D RF Characteristics2 (T = 25˚C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 10 12 – dB V = 28 V, I = 200 mA SS DD DQ Power Output3 P 10 12.5 – W V = 28 V, I = 200 mA SAT DD DQ Drain Efficiency4 η 50 60 – % V = 28 V, I = 200 mA, P = 10 W DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 200 mA, DD DQ P = 10 W CW OUT Dynamic Characteristics Input Capacitance C – 4.5 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 1.3 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.2 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55015-AMP 3 P is defined as I = 0.36 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Typical Performance Small Signal S-Parameters vs Frequency of CGH55015F2 and CGH55015P2 in the CGH55015-AMP Gainand VInp u=t 2R8e tVru, nILo =s s2v0s0F mreAquencyof CGH5D5D015F Vdd=DQ28V,Idq=115mA 14 2 13 1 12 0 11 -1 10 -2 9 -3 B)B) 8 -4 B)B) dd dd (( 7 -5 (( 11 11 22 11 SS 6 -6 SS 5 -7 S21 S11 4 -8 3 -9 2 -10 1 -11 0 -12 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 Frequency(GHz) Drain Efficiency, Power and Gain vs Frequency of the CGH55015F2 and CGH55015P2 in the CGH55015-AMP CGH55015-GaNHEMTC-BandPerformance V = 28 V, I = 200 mA DrainEfficiencDyD,Power,anDQdGainvsFrequency 70 B)B)60 dd (( nn aiai GG50 m),m), BB dd at(at(40 ss PP %),%), ((30 Gain(dB) yy cc nn Psat(dBm) ee cici EffiEffi20 DrainEfficiency(%) nn aiai DrDr10 0 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH55015F2/CGH55015P2 V = 28 V, I = 200 mA DD DQ ) B r d o G ( act A F M K Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F2/CGH55015P2 V = 28 V, I = 200 mA DD DQ ) B ) d s ( m e h ur O g ( Fi ce e n s a oi st N si m e R mu e s ni oi Mi N Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 5500 8.7 – j30.2 21.6 – j4.7 5650 10.2 – j26.9 24.2 - j5.5 5800 12.3 – j24.3 26.5 - j7.5 Note 1. V = 28V, I = 200 mA in the 440166 package. DD DQ Note 2. Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor. CGH55015F2 and CGH55015P2 Power Dissipation De-rating Curve CGH40010FCWPowerDissipationDe-ratingCurve 16 14 12 W)W) (( nn oo 10 atiati pp sisi DisDis 8 erer Note1 ww oo 6 PP 4 2 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

CGH55015-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L 1 C9 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1 C4,C11 CAP, 18pF, +/-5%, 0603, ATC 600S 2 C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2 C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2 C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2 C8 CAP, 10UF, 16V, SMT, TANTALUM 1 C15 CAP, 1.0UF ±10%, 100V, 1210, X7R 1 C16 CAP, 33UF, 100V, ELECT, FK, SMD 1 R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 1/16W, 0603, 1%, 22 OHMS 1 J1 HEADER RT> PLZ .1 CEN LK 5 POS 1 J3,J4 CONN, SMA, FLANGE 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH55015 1 CGH55015-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

CGH55015-AMP Demonstration Amplifier Circuit Schematic CGH55015-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Typical Package S-Parameters for CGH55015F2 / CGH55015P2 (Small Signal, V = 28 V, I = 200 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.911 -130.86 18.44 105.32 0.022 19.38 0.302 -113.00 600 MHz 0.906 -139.86 15.82 99.40 0.023 14.28 0.299 -120.56 700 MHz 0.902 -146.89 13.81 94.44 0.023 10.15 0.298 -126.20 800 MHz 0.900 -152.58 12.23 90.14 0.023 6.68 0.299 -130.51 900 MHz 0.898 -157.33 10.97 86.29 0.023 3.69 0.302 -133.91 1.0 GHz 0.897 -161.38 9.93 82.79 0.023 1.03 0.305 -136.65 1.1 GHz 0.896 -164.92 9.06 79.53 0.023 -1.36 0.309 -138.93 1.2 GHz 0.895 -168.07 8.33 76.47 0.023 -3.55 0.314 -140.86 1.3 GHz 0.895 -170.92 7.71 73.56 0.023 -5.58 0.320 -142.55 1.4 GHz 0.895 -173.52 7.17 70.77 0.023 -7.47 0.326 -144.06 1.5 GHz 0.894 -175.93 6.70 68.08 0.023 -9.25 0.332 -145.44 1.6 GHz 0.894 -178.19 6.29 65.47 0.023 -10.93 0.338 -146.73 1.7 GHz 0.894 179.68 5.92 62.93 0.023 -12.52 0.345 -147.96 1.8 GHz 0.894 177.66 5.60 60.44 0.023 -14.04 0.351 -149.13 1.9 GHz 0.894 175.72 5.31 58.01 0.022 -15.49 0.358 -150.28 2.0 GHz 0.894 173.85 5.04 55.62 0.022 -16.88 0.365 -151.42 2.1 GHz 0.895 172.04 4.80 53.26 0.022 -18.21 0.372 -152.54 2.2 GHz 0.895 170.28 4.59 50.93 0.022 -19.48 0.379 -153.66 2.3 GHz 0.895 168.57 4.39 48.64 0.022 -20.69 0.386 -154.78 2.4 GHz 0.895 166.88 4.21 46.37 0.021 -21.85 0.393 -155.92 2.5 GHz 0.895 165.22 4.04 44.11 0.021 -22.96 0.400 -157.06 2.6 GHz 0.895 163.58 3.88 41.88 0.021 -24.02 0.407 -158.21 2.7 GHz 0.895 161.97 3.74 39.67 0.021 -25.02 0.413 -159.37 2.8 GHz 0.896 160.36 3.61 37.47 0.020 -25.97 0.420 -160.55 2.9 GHz 0.896 158.76 3.49 35.28 0.020 -26.87 0.426 -161.75 3.0 GHz 0.896 157.17 3.37 33.11 0.020 -27.72 0.433 -162.96 3.2 GHz 0.896 153.99 3.17 28.79 0.019 -29.24 0.445 -165.43 3.4 GHz 0.896 150.81 2.99 24.49 0.019 -30.53 0.456 -167.97 3.6 GHz 0.897 147.59 2.83 20.21 0.018 -31.57 0.467 -170.58 3.8 GHz 0.897 144.34 2.69 15.94 0.018 -32.35 0.477 -173.26 4.0 GHz 0.897 141.03 2.56 11.67 0.017 -32.86 0.487 -176.01 4.2 GHz 0.897 137.66 2.45 7.39 0.017 -33.08 0.496 -178.84 4.4 GHz 0.897 134.20 2.35 3.09 0.017 -33.02 0.504 178.25 4.6 GHz 0.897 130.65 2.26 -1.24 0.016 -32.67 0.511 175.25 4.8 GHz 0.897 127.01 2.18 -5.61 0.016 -32.06 0.517 172.16 5.0 GHz 0.896 123.25 2.11 -10.03 0.016 -31.23 0.523 168.97 5.2 GHz 0.896 119.37 2.04 -14.50 0.016 -30.22 0.528 165.68 5.4 GHz 0.896 115.36 1.98 -19.04 0.016 -29.11 0.532 162.26 5.6 GHz 0.896 111.21 1.92 -23.65 0.016 -27.99 0.536 158.72 5.8 GHz 0.895 106.92 1.87 -28.34 0.017 -26.98 0.539 155.04 6.0 GHz 0.895 102.47 1.83 -33.12 0.017 -26.15 0.541 151.21 To download the s-parameters in s2p format, go to the CGH55015F2/P2 Product Page, click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Product Dimensions CGH55015F2 (Package Type — 440166) Product Dimensions CGH55015P2 (Package Type — 440196) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Product Ordering Information Order Number Description Unit of Measure Image CGH55015F2 GaN HEMT Each 2.709 in CGH55015P2 GaN HEMT Each 4.584 in CGH55015-TB Test board without GaN HEMT Each CGH55015-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, Wireless Devices 1.919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.313.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH55015F2_P2 Rev 4.0 www.cree.com/wireless

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