CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Package Types: 440199 PN: CGH40180PP FEATURES APPLICATIONS • Up to 2.5 GHz Operation • 2-Way Private Radio • 20 dB Small Signal Gain at 1.0 GHz • Broadband Amplifiers • 15 dB Small Signal Gain at 2.0 GHz • Cellular Infrastructure • 220 W typical P • Test Instrumentation SAT • 70 % Efficiency at P • Class A, AB, Linear amplifiers suitable for SAT • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M – 0 .3 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 60 mA 25˚C GMAX Maximum Drain Current1 I 24 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case3 R 0.9 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 CGH40180PP at P = 224 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 57.6 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 2.0 A GS(Q) DC DS D Saturated Drain Current2 I 46.4 56.0 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 57.6 mA BR DC GS D RF Characteristics3,4 (T = 25˚C, F = 1.3 GHz unless otherwise noted) C 0 Power Gain P 13 - - dB V = 28 V, I = 2.0 A, P = P G DD DQ OUT SAT Small Signal Gain G - 19 – dB V = 28 V, I = 2.0 A SS DD DQ Power Output at Saturation5 P 180 220 – W V = 28 V, I = 2.0 A SAT DD DQ Drain Efficiency6 η 56 65 – % V = 28 V, I = 2.0 A, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 2.0 A, DD DQ P = 180 W CW OUT Dynamic Characteristics7 Input Capacitance C – 35.7 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 9.6 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 1.6 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40180PP-AMP, including all coupler losses. 4 I of 2.0 A is by biasing each device at 1.0 A. DQ 5 P is defined as: Q1 or Q2 = I = 2.8 mA. SAT G 6 Drain Efficiency = P / P OUT DC 7 Capacitance values are for each side of the device. Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 2 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Typical Performance Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40180PP-AMP V = 28 V, I = 2.0 A, Freq = 0.8 - 1.7 GHz DD S-pDQarameterCGH40180PP 24 10 21 5 S21 18 0 15 -5 B)B) B)B) dd SS1111 dd ((12 -10 (( 11 11 22 11 SS SS 9 -15 S21 6 -20 S11 3 -25 0 -30 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Frequency(MHz) Output Power and Drain Efficiency vs Frequency measured in Broadband Amplifier Circuit CGH40180PP-AMP V = 28 V, I = 2.0 A PowerDaDndEfficiencDyQvsFrequency 250 100% Psat 235 90% 220 80% 205 70% er(W)er(W)190 DrainEfficiency 60% encyency ww cici PoPo175 50% EffiEffi utut nn OutpOutp160 40% DraiDrai 145 Psat 30% 130 Efficiency 20% 115 10% 100 0% 1100 1150 1200 1250 1300 Frequency(MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 3 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Typical Performance Gain and Drain Efficiency vs Output Power measured in Broadband Amplifier Circuit CGH40180PP-AMP V = 28 V, I = 2.0 A DD DQ 22 80% gain1100 gain1150 gain1200 gain1250 gain1300 20 eff1100 eff1150 eff1200 eff1250 eff1300 70% 18 60% Gain 16 50% yy cc nn B)B) ee dd cici Gain(Gain(1144 4400%% ainEffiainEffi Drain DrDr 12 30% Efficiency 10 20% 8 10% 6 0% 30 32 34 36 38 40 42 44 46 48 50 52 54 OutputPower (dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 4 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40180PP V = 28 V, I = 1.0 A DD DQ B) d r G ( cto A a M F K Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP V = 28 V, I = 1 A DD DQ dB) ms) e ( h r O Figu ce ( Noise sistan m Re u e m s ni oi Mi N Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 5 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

CGH40180PP Power Dissipation De-rating Curve CGH40180PPCWPowerDissipationDe-ratingCurve 250 200 W)W) ((150 nn oo atiati pp sisi ss DiDi100 erer ww Note1 oo PP 50 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). CGH40180PP Transient Power Dissipation De-rating Curve CGH40180PPTransientPowerDissipationDe-RatingCurve 250 200 W)W) (( 150 nn oo atiati pp sisi ss DiDi 100 erer ww oo Note1 PP 50 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle with no power dissipated during the “off-cycle.” Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 6 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Thermal Resistance as a Function of Pulse Width HeatingCurvefor2x28.8mmGaNHEMTin440199Packageat4W/mm 1.0 0.9 0.8 0.7 W)W) 0.6 C/C/ (( 0.5 hh RtRt 0.4 0.3 0.2 0.1 0.0 1.00E-08 1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Time(seconds) Note 1: This heating curve assumes zero power dissipation during the “off” portion of the duty cycle. Note 2: This data is for transient power dissipation at 224 W, Duty Cycle = 20 %. Simulated Source and Load Impedances D1 ZSource1 ZLoad1 G1 S G2 ZSource2 ZLoad2 D2 Frequency (MHz) Z Source Z Load 500 2.85 + j1.99 5.27 + j0.68 1000 0.8 + j0.42 4.91 + j0.36 1500 0.84 - j1.69 4.65 - j0.24 2000 0.88 - j3.05 2.8 - j1.05 2500 1.08 - j4.5 3.1 - j2.47 3000 1.25 - j6.06 3.1 - j4.01 Note 1. V = 28V, I = 2.0 A in the 440199 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 7 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

CGH40180PP-AMP Demonstration Amplifier Circuit Schematic CGH40180PP-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 8 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

CGH40180PP-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 100 Ohm, +/-1%, 1 W, 2512 1 R10,R20 RES, 511 Ohm, +/- 5%, 1/16W, 0603 2 R30,R40 RES, 1/16W, 0603, 1%, 5.1 OHMS 2 C1,C2,C3,C4,C30,C40,C70,C80 CAP, 27 pF,+/-5% 0805,ATC600F 8 C10,C11,C13,C14,C20,C21,C23,C24 CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S 8 C12,C22 CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S 2 C15,C19,C25,C29 CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S 4 C16,C26 CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S 2 C17,C27 CAP, 0.9PF, +/-0.1 pF, 0603, ATC600S 2 C31,C41 CAP, 100 pF,+/-5%, 0603,ATC600S 2 C32,C42 CAP, 470 pF, 5%, 100V, 0603, X7R 2 C34,C44,C72,C82 CAP, 33000 pF, 0805, 100V, X7R 4 C35,C45 CAP, 10 uF, 16V, TANTALUM 2 C50,C51,C60,C61 CAP, 5.6 pF, +/-0.1 pF, 0805, ATC600F 4 C52,C62 CAP, 2.7 pF, +/-0.1 pF, 0805, ATC600F 2 C53,C63 CAP, 2.2 pF, +/-0.1 pF, 0805, ATC600F 2 C54,C64 CAP, 1.1 pF, +/-0.05 pF, 0805, ATC600F 2 C55,C65 CAP, 0.5 pF, +/-0.05 pF, 0805, ATC600F 2 C73,C83 CAP, 1.0 uF, +/-10%, 1210, 100V, X7R 2 C74,C84 CAP, 33 uF, 100V, ELECT, FK, SMD 2 L10,L20 IND, 6.8 nH, 0603, L-14C6N8ST 2 L30,L40 FERRITE, 220 OHM, 0603, BLM21PG221SN1 2 J1,J2 CONN, N-Type, Female, 0.500 SMA Flange 2 J3,J4 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 2 - PCB, RO4350, Er = 3.48, h = 20 mil 1 Q1 CGH40180PP 1 CGH40180PP-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 9 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Typical Package S-Parameters for CGH40180PP, Single Side (Small Signal, V = 28 V, I = 1000 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.957 -177.48 4.22 79.26 0.007 10.74 0.798 -179.16 600 MHz 0.957 -178.74 3.51 76.30 0.007 12.14 0.800 -179.41 700 MHz 0.957 -179.78 3.00 73.47 0.007 13.71 0.802 -179.63 800 MHz 0.957 179.32 2.62 70.74 0.007 15.38 0.804 -179.84 900 MHz 0.957 178.51 2.33 68.08 0.007 17.15 0.807 179.96 1.0 GHz 0.957 177.76 2.09 65.49 0.007 18.99 0.809 179.74 1.1 GHz 0.957 177.06 1.90 62.95 0.007 20.87 0.812 179.52 1.2 GHz 0.957 176.38 1.73 60.46 0.007 22.80 0.814 179.28 1.3 GHz 0.957 175.72 1.60 58.02 0.008 24.73 0.817 179.03 1.4 GHz 0.956 175.08 1.48 55.63 0.008 26.66 0.820 178.76 1.5 GHz 0.956 174.44 1.38 53.29 0.008 28.57 0.823 178.46 1.6 GHz 0.956 173.81 1.29 50.98 0.008 30.44 0.825 178.15 1.7 GHz 0.956 173.18 1.22 48.72 0.008 32.25 0.828 177.82 1.8 GHz 0.955 172.55 1.15 46.50 0.009 33.98 0.831 177.47 1.9 GHz 0.955 171.91 1.09 44.32 0.009 35.62 0.833 177.10 2.0 GHz 0.955 171.27 1.04 42.17 0.009 37.17 0.835 176.71 2.1 GHz 0.954 170.62 0.99 40.06 0.010 38.61 0.838 176.30 2.2 GHz 0.954 169.96 0.95 37.98 0.010 39.93 0.840 175.87 2.3 GHz 0.953 169.29 0.91 35.93 0.011 41.14 0.842 175.42 2.4 GHz 0.952 168.60 0.87 33.91 0.011 42.22 0.844 174.95 2.5 GHz 0.952 167.90 0.84 31.92 0.012 43.18 0.845 174.47 2.6 GHz 0.951 167.18 0.82 29.95 0.013 44.01 0.847 173.96 2.7 GHz 0.950 166.45 0.79 28.00 0.013 44.73 0.848 173.44 2.8 GHz 0.949 165.69 0.77 26.07 0.014 45.32 0.849 172.89 2.9 GHz 0.948 164.91 0.75 24.15 0.015 45.79 0.850 172.33 3.0 GHz 0.946 164.10 0.73 22.24 0.016 46.15 0.850 171.74 3.2 GHz 0.943 162.39 0.71 18.45 0.018 46.53 0.851 170.51 3.4 GHz 0.939 160.55 0.69 14.64 0.020 46.47 0.850 169.19 3.6 GHz 0.935 158.53 0.67 10.80 0.023 45.97 0.848 167.76 3.8 GHz 0.929 156.31 0.67 6.86 0.027 45.03 0.845 166.21 4.0 GHz 0.922 153.83 0.67 2.78 0.031 43.63 0.841 164.53 4.2 GHz 0.913 151.03 0.68 -1.51 0.036 41.72 0.834 162.69 4.4 GHz 0.901 147.82 0.69 -6.12 0.042 39.23 0.825 160.65 4.6 GHz 0.886 144.10 0.72 -11.16 0.049 36.07 0.813 158.39 4.8 GHz 0.866 139.68 0.76 -16.81 0.059 32.05 0.797 155.86 5.0 GHz 0.838 134.36 0.81 -23.30 0.073 26.92 0.775 153.00 5.2 GHz 0.799 127.78 0.88 -30.99 0.091 20.30 0.747 149.76 5.4 GHz 0.742 119.49 0.97 -40.41 0.117 11.55 0.708 146.16 5.6 GHz 0.658 108.92 1.08 -52.33 0.157 -0.34 0.657 142.31 5.8 GHz 0.534 95.85 1.21 -67.76 0.219 -16.90 0.594 138.62 6.0 GHz 0.373 82.93 1.34 -87.69 0.321 -40.38 0.534 134.70 To download the s-parameters in s2p format, go to the CGH40180PP Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 10 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Product Dimensions CGH40180PP (Package Type — 440199) Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 11 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40180PP GaN HEMT Each CGH40180PP-TB Test board without GaN HEMT Each CGH40180PP-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 12 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE 13 CGH40180PP Rev 3.0 Fax: +1.919.869.2733 www.cree.com/rf

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