CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Types: 440193 PN: CGH40120F FEATURES APPLICATIONS • Up to 2.5 GHz Operation • 2-Way Private Radio • 20 dB Small Signal Gain at 1.0 GHz • Broadband Amplifiers • 15 dB Small Signal Gain at 2.0 GHz • Cellular Infrastructure • 120 W Typical P • Test Instrumentation SAT • 70 % Efficiency at P • Class A, AB, Linear amplifiers suitable for SAT • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M - 0 .3 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 30 mA 25˚C GMAX Maximum Drain Current1 I 12 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case3 R 1.39 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40120F at P = 115 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 7. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 1.0 A GS(Q) DC DS D Saturated Drain Current2 I 23.2 28.0 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 28.8 mA BR DC GS D RF Characteristics3 (T = 25˚C, F = 1.3 GHz unless otherwise noted) C 0 Small Signal Gain G 17.5 19 – dB V = 28 V, I = 1.0 A SS DD DQ Power Output4 P 100 120 – W V = 28 V, I = 1.0 A SAT DD DQ Drain Efficiency5 η 55 70 – % V = 28 V, I = 1.0 A, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 1.0 A, DD DQ P = 100 W CW OUT Dynamic Characteristics Input Capacitance C – 35.3 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 9.1 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 1.6 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40120F-AMP 4 P is defined as I = 2.8 mA. SAT G 5 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40120F Rev 3.0 www.cree.com/rf

Typical Performance Gain and Input Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40120F-AMP V = 28 V, I = 1.0 A DD DQ 25 25 CGH40120FS21 CGH40120FS11 20 15 B) d s ( s B)B) 15 5 o dd L (( n nn r GaiGai etu R 10 -5 ut p n I 5 -15 0 -25 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 Frequency(MHz) Gain, Output Power and PAE vs Frequency measured in Broadband Amplifier Circuit CGH40120F-AMP V = 28 V, I = 1.0 A DD DQ 30 150 Output Power 25 125 Gain %)%) (( 20 100 EE AA PP B)B) W),W), dd (( ((15 75 rr nn ee GaiGai owow PAE PP utut 10 50 pp utut OO 5 Gain OutputPower PAE 25 0 0 1200 1250 1300 1350 1400 Frequency(MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40120F Rev 3.0 www.cree.com/rf

Typical 800 MHz - 1300 MHz Performance Gain, Output Power, and Power Added Efficiency vs Frequency measured in 0.8-1.3 GHz Amplifier Circuit 03-000255 V = 28 V, I = 1.0 A DD DQ 30 150 25 125 Gain (SS) 20 100 Gain (Assoc) %)%) (( B)B) P AEAE dd SAT PP (( ,, nn1155 7755 W)W) aiai (( GG erer PAE ww oo PP 10 50 SmallSignalGain(dB) Assoc.Gain(dB) 5 25 Psat(W) PAE(%) 0 0 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 Frequency(MHz) Typical Digital Video Broadcast (DVB) Performance Output Power and Power Added Efficiency vs Frequency measured in DVB Amplifier Circuit 03-000256 V = 32 V, I = 1.0 A DD DQ 160 80 150 75 %)%) (( E)E) AA 140 70 PP (( yy cc W)W) enen (( cici werwer 130 6655 EffiEffi oo dd PP ee utut dddd OutpOutp 120 60 werAwerA oo PP OutputPower(W) 110 55 PAE(%) 100 50 1350 1375 1400 1425 1450 1475 1500 1525 1550 Frequency(MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40120F Rev 3.0 www.cree.com/rf

Typical Digital Video Broadcast (DVB) Performance Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256. V = 32 V, I = 1.0 A DD DQ 25 25 19.30 15 15 B)B) 5 5 dd (( B)B) ss dd ss (( oo nn LL aiai --55 --55 nn GG rr uu tt ee RR -15 -15 -21.41 S21 -25 -25 S11 -35 -35 1200 1300 1400 1500 1600 1700 1800 Frequency(MHz) Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz. V = 32 V, I = 1.0 A, P = 40 W, Drain Efficiency = 40 %, Signal PAR = 5.3 dB DD DQ AVE Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40120F Rev 3.0 www.cree.com/rf

Typical Performance CGH40120F Simulated Maximum Available Gain and K Factor of the CGH40120F V = 28 V, I = 1.0 A DD DQ B) d or G ( ct A Fa M K Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120F V = 28 V, I = 1 A DD DQ dB) ms) e ( h r O Figu ce ( Noise sistan m Re u e m s ni oi Mi N Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40120F Rev 3.0 www.cree.com/rf

CGH40120F CW Power Dissipation De-rating Curve CGH40120FPowerDissipationDe-RatingCurve 120 100 W)W)80 (( nn oo atiati Note 1 pp sisi60 ss DiDi erer ww oo PP40 20 0 0 25 50 75 100 125 150 175 200 225 250 MaximumTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 2 + j3.3 5.14 + j0.04 1000 0.81 + j0.18 4.68 - j0.26 1500 0.75 - j1.56 3.44 - j0.77 2000 0.84 - j3 2.34 - j0.95 2500 1.2 - j4.43 2.7 - j2.56 3000 1.09 - j5.9 3.06 - j3.82 Note 1. V = 28V, I = 1.0 A in the 440193 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40120F Rev 3.0 www.cree.com/rf

CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1, C30 CAP, 27 PF +/- 5%, 250V, 0805, ATC 600F 2 C2 CAP, 1.2 pF, +/- 0.1 pF, 0603, ATC 600S 1 C3, C4 CAP, 3.9 pF, +/- 0.1 pF, 0603, ATC 600S 2 C5, C6 CAP, 4.7 pF, +/- 0.1 pF, 0603, ATC 600S 2 C11, C31 CAP, 27pF,+/-5%, 0603, ATC 600S 2 C12, C32 CAP, 100 pF, +/- 5%, 0603, ATC 600S 2 C13, C33 CAP, 470 pF +/- 5%,100 V, 0603, Murata 2 C14, C34 CAP, CER, 33000 pF, 100V, X7R, 0805, Murata 2 C15 CAP, 10 uF, 16V, SMT, TANTALUM 1 C35 CAP, CER, 1.0 uF, 100V, +/- 10%, X7R, 1210 1 C36 CAP, 33 uF, 100V, ELECT, FK, SMD 1 C20, C21 CAP, 5.6 PF +/- 0.1 pF, 0805, ATC 600F 2 C22, C23 CAP, 0.5 PF +/- 0.05 pF, 0805, ATC 600F 2 C24, C25 CAP, 1.2 PF +/- 0.1 pF, 0805, ATC 600F 2 R1 RES, 1/16W, 0603, 511 Ohms (≤5% tolerance) 1 R2 RES, 1/16W, 0603, 5.1 Ohms (≤5% tolerance) 1 L1 IND, 6.8 nH, 0603, L-14C6N8ST 1 L2 IND, FERRITE, 220 OHM, 0805, BLM21PG221SN1 1 J1, J2 CONN, N-Type, Female, 0.500 SMA Flange 2 J3 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 - PCB, RO4003, Er = 3.38, h = 32 mil 1 Q1 CGH40120F 1 CGH40120F-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40120F Rev 3.0 www.cree.com/rf

CGH40120F-AMP Demonstration Amplifier Circuit Schematic CGH40120F-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40120F Rev 3.0 www.cree.com/rf

Typical Package S-Parameters for CGH40120F (Small Signal, V = 28 V, I = 1.0 A, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.961 -177.60 4.19 80.16 0.006 13.42 0.807 -179.57 600 MHz 0.961 -178.85 3.49 77.38 0.006 15.30 0.808 -179.85 700 MHz 0.961 -179.89 2.99 74.72 0.006 17.30 0.810 179.89 800 MHz 0.961 179.22 2.61 72.16 0.007 19.36 0.811 179.66 900 MHz 0.961 178.41 2.32 69.66 0.007 21.47 0.813 179.42 1.0 GHz 0.960 177.67 2.09 67.22 0.007 23.59 0.815 179.18 1.1 GHz 0.960 176.96 1.89 64.83 0.007 25.71 0.817 178.94 1.2 GHz 0.960 176.28 1.73 62.49 0.007 27.81 0.819 178.68 1.3 GHz 0.960 175.63 1.60 60.18 0.007 29.86 0.822 178.41 1.4 GHz 0.960 174.99 1.48 57.92 0.008 31.86 0.824 178.13 1.5 GHz 0.960 174.36 1.38 55.69 0.008 33.80 0.826 177.83 1.6 GHz 0.960 173.73 1.30 53.50 0.008 35.65 0.828 177.52 1.7 GHz 0.960 173.11 1.22 51.35 0.008 37.40 0.830 177.19 1.8 GHz 0.959 172.49 1.15 49.23 0.009 39.06 0.832 176.84 1.9 GHz 0.959 171.86 1.10 47.15 0.009 40.61 0.835 176.47 2.0 GHz 0.959 171.23 1.04 45.09 0.010 42.04 0.837 176.09 2.1 GHz 0.958 170.59 0.99 43.07 0.010 43.36 0.839 175.69 2.2 GHz 0.958 169.95 0.95 41.08 0.011 44.56 0.840 175.28 2.3 GHz 0.957 169.29 0.91 39.12 0.011 45.64 0.842 174.85 2.4 GHz 0.957 168.63 0.88 37.18 0.012 46.60 0.844 174.40 2.5 GHz 0.956 167.95 0.85 35.28 0.012 47.45 0.845 173.93 2.6 GHz 0.956 167.26 0.82 33.39 0.013 48.18 0.847 173.45 2.7 GHz 0.955 166.56 0.79 31.53 0.014 48.80 0.848 172.94 2.8 GHz 0.954 165.84 0.77 29.68 0.014 49.32 0.849 172.43 2.9 GHz 0.953 165.10 0.75 27.86 0.015 49.74 0.850 171.89 3.0 GHz 0.952 164.34 0.73 26.04 0.016 50.05 0.851 171.33 3.2 GHz 0.950 162.75 0.70 22.46 0.018 50.40 0.852 170.17 3.4 GHz 0.948 161.07 0.68 18.91 0.020 50.38 0.852 168.93 3.6 GHz 0.944 159.27 0.66 15.37 0.023 50.02 0.852 167.61 3.8 GHz 0.941 157.33 0.65 11.82 0.025 49.32 0.850 166.19 4.0 GHz 0.936 155.23 0.64 8.23 0.029 48.30 0.848 164.68 4.2 GHz 0.931 152.94 0.64 4.57 0.033 46.94 0.844 163.06 4.4 GHz 0.925 150.43 0.64 0.80 0.037 45.24 0.840 161.32 4.6 GHz 0.917 147.66 0.65 -3.12 0.042 43.18 0.834 159.44 4.8 GHz 0.908 144.59 0.66 -7.23 0.048 40.72 0.826 157.41 5.0 GHz 0.896 141.14 0.68 -11.60 0.055 37.83 0.817 155.20 5.2 GHz 0.883 137.25 0.71 -16.29 0.064 34.45 0.805 152.81 5.4 GHz 0.866 132.84 0.74 -21.37 0.074 30.53 0.791 150.19 5.6 GHz 0.845 127.78 0.78 -26.94 0.086 25.97 0.774 147.33 5.8 GHz 0.820 121.95 0.83 -33.09 0.101 20.69 0.755 144.21 6.0 GHz 0.789 115.17 0.88 -39.95 0.118 14.58 0.731 140.79 To download the s-parameters in s2p format, go to the CGH40120F Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40120F Rev 3.0 www.cree.com/rf

Product Dimensions CGH40120F (Package Type — 440193) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40120F Rev 3.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40120F GaN HEMT Each CGH40120F-TB Test board without GaN HEMT Each CGH40120F-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40120F Rev 3.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40120F Rev 3.0 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGH40120F CGH40120F-TB