CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package. Package Type: 440193 PN: CGH40035F FEATURES APPLICATIONS • Up to 4 GHz Operation • 2-Way Private Radio • 15 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 13 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 45 W typical P • Test Instrumentation SAT • 60 % Efficiency at P • Class A, AB, Linear amplifiers suitable for SAT • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M – 0 .4 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 10.0 mA 25˚C GMAX Maximum Drain Current1 I 4.5 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case3 R 3.0 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40035F at P = 42 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10.8 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 500 mA GS(Q) DC DS D Saturated Drain Current I 8.7 10.5 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 10.8 mA BR DC GS D RF Characteristics2 (T = 25˚C, F = 3.5 GHz unless otherwise noted) C 0 Small Signal Gain G 13 14 – dB V = 28 V, I = 500 mA SS DD DQ Power Output3 P 30 45 – W V = 28 V, I = 500 mA SAT DD DQ Drain Efficiency4 η 50 60 – % V = 28 V, I = 500 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 500 mA, DD DQ P = 35 W CW OUT Dynamic Characteristics Input Capacitance C – 14.7 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 4.9 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.6 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40035F-AMP 3 P is defined as I = 1.08 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40035F Rev 4.0 www.cree.com/rf

Typical Performance Simulated Small Signal Gain and Input Return Loss of the CGHC4G0H043050F3-5AMPaPg evs3 FTroepquency V = 28 V, I = 500 mA DD DQ P , Gain, and Drain Efficiency vs Frequency of the SAT PsatC,GGaHin4,0an0d3D5rFa ininE tffhiceie CncGyHv4s0F0re3q5ueFn-cAyMofPthe CGVH40 0=3 52F8i nV,t hIeC =G H5400003 m5-TAB DVDDD=28V,IDDQQ=500mA 50 80 45 75 P SAT 40 70 35 65 B)B) %)%) dd (( ((30 60 yy nn Efficiency cc aiai enen GG25 55 cici W),W), EffiEffi (P(SAT20 50 DrainDrain 15 45 Gain 10 Psat 40 Gain 5 35 DrainEff 0 30 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40035F Rev 4.0 www.cree.com/rf

Typical Performance Swept CW Data of CGH40035 vs. Output Power with Source and Load Impedances Optimized for P Power in CGH40035F-AMP SAT V = 28 V, I = 500 mA, Freq = 3.5 GHz DD DQ 16 80% 14 70% 12 Gain 60% %) E ( 10 Gain 50% A P B) Drain Efficiency y, d c n ( 8 PAE 40% en ai ci G 6 30% Effi n ai PAE Dr 4 20% 2 Efficiency 10% 0 0% 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Simulated Maximum Available Gain and K Factor of the CGH40035F V = 28 V, I = 500 mA DD DQ ) B d or G ( ct a A F M K Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40035F Rev 4.0 www.cree.com/rf

Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40035F V = 28 V, I = 500 mA DD DQ B) s) d m ( e h r O u ( g e Fi c e an s t Noi sis e m R u e m s ni Noi Mi Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40035F Rev 4.0 www.cree.com/rf

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 5.12 + j8.3 15.5 + j5.67 1000 2.97 + j1.38 11.29 + j7.27 1500 1.15 - j0.38 6.6 + j5.56 2500 0.91 - j5.13 6.17 - j0.4 3500 2.0 - j9.9 4.78 – j2.58 Note 1. V = 28V, I = 500mA, in the 440193 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40035F Power Dissipation De-rating Curve CGH40035FCWPowerDissipationDe-ratingCurve 45 40 35 W)W) 30 (( nn oo atiati 2255 pp sisi ss DiDi 20 werwer Note1 PoPo 15 10 5 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40035F Rev 4.0 www.cree.com/rf

CGH40035F-AMP Demonstration Amplifier Circuit Schematic CGH40035F-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40035F Rev 4.0 www.cree.com/rf

CGH40035F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, ≤5%, 5.1 OHMS 1 R2 RES, 1/16W, 0603, 1%, 100 OHMS 1 C6,C13,C19 CAP, 470PF, 5%, 100V, 0603 3 C16,C22 CAP, 33 UF, 20%, G CASE 2 C15,C21 CAP, 1.0UF, 100V, 10%, X7R, 1210 2 C8 CAP 10UF 16V TANTALUM 1 C1 CAP, 0.6pF, +/-0.05pF, 0603 1 C2 CAP, 1.2pF, +/-0.1pF, 0603 1 C10 CAP 4.7PF, +/- 0.25pF, ATC 100B 1 C4,C11,C17 CAP, 7.5pF, +/-0.1pF, 0603 3 C5,C12,C18,C30,C31 CAP, 47pF,+/-5%pF, 0603 5 C7,C14,C20 CAP,33000PF, 0805,100V, X7R 3 J2,J3 CONN SMA STR PANEL JACK RECP 2 J1 HEADER RT>PLZ .1CEN LK 9POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 Q1 CGH40035F 1 CGH40035F-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40035F Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40035F (Small Signal, V = 28 V, I = 250 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.921 -166.38 9.09 82.39 0.015 -1.84 0.555 -165.89 600 MHz 0.921 -169.49 7.57 78.16 0.015 -4.89 0.564 -166.40 700 MHz 0.922 -171.87 6.47 74.31 0.015 -7.54 0.574 -166.63 800 MHz 0.922 -173.79 5.65 70.73 0.015 -9.90 0.583 -166.74 900 MHz 0.923 -175.42 5.00 67.35 0.015 -12.05 0.593 -166.81 1.0 GHz 0.923 -176.84 4.49 64.12 0.014 -14.02 0.604 -166.89 1.1 GHz 0.924 -178.11 4.06 61.01 0.014 -15.84 0.614 -166.99 1.2 GHz 0.925 -179.29 3.71 58.01 0.014 -17.52 0.625 -167.14 1.3 GHz 0.925 179.62 3.41 55.10 0.014 -19.07 0.635 -167.34 1.4 GHz 0.926 178.57 3.16 52.28 0.014 -20.50 0.645 -167.59 1.5 GHz 0.927 177.57 2.94 49.54 0.014 -21.81 0.656 -167.90 1.6 GHz 0.927 176.59 2.75 46.86 0.013 -23.01 0.665 -168.25 1.7 GHz 0.928 175.62 2.58 44.26 0.013 -24.09 0.675 -168.65 1.8 GHz 0.928 174.67 2.43 41.71 0.013 -25.06 0.684 -169.08 1.9 GHz 0.928 173.72 2.30 39.21 0.013 -25.91 0.692 -169.56 2.0 GHz 0.929 172.76 2.19 36.77 0.013 -26.65 0.700 -170.07 2.1 GHz 0.929 171.80 2.09 34.37 0.012 -27.27 0.708 -170.61 2.2 GHz 0.929 170.83 2.00 32.01 0.012 -27.77 0.715 -171.18 2.3 GHz 0.928 169.84 1.92 29.69 0.012 -28.16 0.721 -171.77 2.4 GHz 0.928 168.83 1.85 27.40 0.012 -28.43 0.727 -172.38 2.5 GHz 0.928 167.80 1.78 25.14 0.012 -28.59 0.733 -173.02 2.6 GHz 0.927 166.74 1.73 22.89 0.012 -28.62 0.738 -173.67 2.7 GHz 0.926 165.64 1.68 20.66 0.012 -28.53 0.743 -174.33 2.8 GHz 0.925 164.51 1.63 18.45 0.012 -28.32 0.747 -175.02 2.9 GHz 0.924 163.34 1.59 16.24 0.012 -27.99 0.751 -175.72 3.0 GHz 0.923 162.12 1.56 14.03 0.012 -27.54 0.754 -176.43 3.2 GHz 0.919 159.52 1.51 9.58 0.012 -26.32 0.759 -177.91 3.4 GHz 0.914 156.66 1.48 5.07 0.012 -24.69 0.762 -179.44 3.6 GHz 0.908 153.49 1.46 0.42 0.012 -22.78 0.764 178.96 3.8 GHz 0.901 149.91 1.46 -4.42 0.013 -20.73 0.764 177.29 4.0 GHz 0.891 145.85 1.47 -9.52 0.014 -18.75 0.761 175.54 4.2 GHz 0.879 141.16 1.50 -14.99 0.015 -17.12 0.757 173.69 4.4 GHz 0.863 135.68 1.55 -20.92 0.017 -16.10 0.750 171.73 4.6 GHz 0.844 129.19 1.62 -27.45 0.020 -16.00 0.742 169.65 4.8 GHz 0.819 121.39 1.70 -34.74 0.023 -17.08 0.730 167.41 5.0 GHz 0.788 111.88 1.81 -42.97 0.027 -19.60 0.717 164.98 5.2 GHz 0.750 100.13 1.93 -52.34 0.032 -23.79 0.701 162.29 5.4 GHz 0.707 85.49 2.07 -63.07 0.039 -29.84 0.682 159.23 5.6 GHz 0.662 67.25 2.21 -75.29 0.046 -37.88 0.660 155.58 5.8 GHz 0.626 45.06 2.33 -89.03 0.054 -47.89 0.634 151.00 6.0 GHz 0.611 19.67 2.41 -104.14 0.063 -59.66 0.599 144.99 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40035F Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40035F (Small Signal, V = 28 V, I = 500 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.933 -168.22 9.15 83.17 0.012 0.59 0.599 -170.98 600 MHz 0.933 -171.13 7.63 79.30 0.012 -1.75 0.604 -171.44 700 MHz 0.933 -173.38 6.54 75.79 0.012 -3.72 0.610 -171.69 800 MHz 0.933 -175.22 5.72 72.50 0.012 -5.44 0.615 -171.82 900 MHz 0.933 -176.78 5.09 69.38 0.012 -6.98 0.621 -171.89 1.0 GHz 0.933 -178.16 4.57 66.38 0.012 -8.36 0.628 -171.96 1.1 GHz 0.934 -179.40 4.16 63.48 0.012 -9.61 0.634 -172.02 1.2 GHz 0.934 179.45 3.81 60.66 0.012 -10.74 0.641 -172.11 1.3 GHz 0.934 178.38 3.52 57.92 0.011 -11.75 0.647 -172.22 1.4 GHz 0.934 177.35 3.26 55.24 0.011 -12.67 0.654 -172.37 1.5 GHz 0.934 176.35 3.05 52.61 0.011 -13.47 0.661 -172.55 1.6 GHz 0.934 175.38 2.86 50.04 0.011 -14.18 0.667 -172.77 1.7 GHz 0.934 174.43 2.70 47.51 0.011 -14.78 0.673 -173.03 1.8 GHz 0.933 173.48 2.55 45.02 0.011 -15.29 0.679 -173.32 1.9 GHz 0.933 172.54 2.43 42.58 0.011 -15.69 0.685 -173.64 2.0 GHz 0.933 171.59 2.32 40.16 0.011 -15.99 0.691 -174.00 2.1 GHz 0.932 170.63 2.22 37.78 0.011 -16.19 0.696 -174.39 2.2 GHz 0.932 169.66 2.13 35.43 0.011 -16.29 0.701 -174.80 2.3 GHz 0.931 168.67 2.05 33.10 0.011 -16.30 0.706 -175.25 2.4 GHz 0.930 167.66 1.98 30.79 0.011 -16.21 0.710 -175.71 2.5 GHz 0.929 166.62 1.92 28.49 0.011 -16.02 0.714 -176.21 2.6 GHz 0.928 165.56 1.86 26.21 0.011 -15.75 0.718 -176.72 2.7 GHz 0.927 164.46 1.81 23.93 0.011 -15.40 0.721 -177.26 2.8 GHz 0.925 163.32 1.77 21.66 0.011 -14.96 0.724 -177.82 2.9 GHz 0.924 162.14 1.73 19.38 0.011 -14.46 0.727 -178.40 3.0 GHz 0.922 160.90 1.70 17.09 0.011 -13.89 0.729 -179.00 3.2 GHz 0.917 158.28 1.65 12.48 0.012 -12.64 0.732 179.75 3.4 GHz 0.912 155.38 1.62 7.77 0.012 -11.30 0.733 178.42 3.6 GHz 0.905 152.15 1.61 2.90 0.013 -10.03 0.733 177.01 3.8 GHz 0.896 148.51 1.61 -2.18 0.014 -8.98 0.731 175.53 4.0 GHz 0.885 144.37 1.63 -7.56 0.016 -8.34 0.726 173.97 4.2 GHz 0.871 139.58 1.67 -13.32 0.018 -8.28 0.720 172.31 4.4 GHz 0.853 133.98 1.73 -19.56 0.020 -8.99 0.712 170.56 4.6 GHz 0.831 127.34 1.80 -26.43 0.023 -10.65 0.701 168.71 4.8 GHz 0.804 119.36 1.89 -34.07 0.027 -13.45 0.688 166.73 5.0 GHz 0.770 109.64 2.01 -42.66 0.032 -17.57 0.673 164.60 5.2 GHz 0.729 97.64 2.14 -52.39 0.038 -23.19 0.656 162.24 5.4 GHz 0.684 82.72 2.28 -63.43 0.045 -30.48 0.637 159.52 5.6 GHz 0.638 64.19 2.41 -75.89 0.052 -39.52 0.615 156.18 5.8 GHz 0.603 41.77 2.53 -89.77 0.061 -50.28 0.587 151.85 6.0 GHz 0.592 16.41 2.59 -104.90 0.069 -62.57 0.551 146.03 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40035F Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40035F (Small Signal, V = 28 V, I = 750 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.938 -168.93 9.06 83.42 0.011 1.67 0.616 -172.64 600 MHz 0.938 -171.77 7.56 79.69 0.011 -0.35 0.620 -173.09 700 MHz 0.938 -173.96 6.49 76.30 0.011 -2.03 0.625 -173.35 800 MHz 0.938 -175.76 5.68 73.13 0.011 -3.46 0.629 -173.51 900 MHz 0.938 -177.30 5.05 70.10 0.011 -4.72 0.634 -173.61 1.0 GHz 0.938 -178.66 4.55 67.20 0.011 -5.83 0.639 -173.69 1.1 GHz 0.938 -179.89 4.14 64.38 0.011 -6.82 0.644 -173.77 1.2 GHz 0.938 178.97 3.80 61.63 0.011 -7.70 0.649 -173.86 1.3 GHz 0.938 177.90 3.51 58.96 0.011 -8.47 0.655 -173.98 1.4 GHz 0.938 176.88 3.26 56.33 0.011 -9.15 0.660 -174.12 1.5 GHz 0.937 175.89 3.05 53.76 0.011 -9.72 0.665 -174.28 1.6 GHz 0.937 174.92 2.87 51.23 0.010 -10.21 0.671 -174.48 1.7 GHz 0.937 173.96 2.71 48.74 0.010 -10.60 0.676 -174.71 1.8 GHz 0.936 173.02 2.57 46.28 0.010 -10.89 0.681 -174.97 1.9 GHz 0.936 172.07 2.44 43.86 0.010 -11.10 0.685 -175.26 2.0 GHz 0.935 171.12 2.33 41.47 0.010 -11.22 0.690 -175.58 2.1 GHz 0.935 170.16 2.24 39.10 0.010 -11.24 0.694 -175.93 2.2 GHz 0.934 169.18 2.15 36.76 0.010 -11.19 0.699 -176.30 2.3 GHz 0.933 168.19 2.07 34.43 0.010 -11.05 0.702 -176.70 2.4 GHz 0.932 167.18 2.00 32.12 0.011 -10.83 0.706 -177.13 2.5 GHz 0.931 166.14 1.94 29.81 0.011 -10.54 0.709 -177.58 2.6 GHz 0.930 165.06 1.89 27.52 0.011 -10.18 0.712 -178.06 2.7 GHz 0.928 163.96 1.84 25.23 0.011 -9.76 0.715 -178.55 2.8 GHz 0.927 162.81 1.80 22.94 0.011 -9.28 0.717 -179.07 2.9 GHz 0.925 161.62 1.77 20.64 0.011 -8.77 0.719 -179.61 3.0 GHz 0.923 160.39 1.74 18.33 0.011 -8.23 0.720 179.83 3.2 GHz 0.918 157.74 1.69 13.65 0.012 -7.10 0.722 178.65 3.4 GHz 0.912 154.81 1.66 8.87 0.013 -6.03 0.723 177.40 3.6 GHz 0.904 151.56 1.65 3.92 0.014 -5.15 0.721 176.07 3.8 GHz 0.895 147.88 1.66 -1.26 0.015 -4.59 0.718 174.66 4.0 GHz 0.883 143.69 1.68 -6.74 0.017 -4.52 0.713 173.17 4.2 GHz 0.869 138.85 1.72 -12.62 0.019 -5.08 0.706 171.60 4.4 GHz 0.851 133.18 1.78 -19.00 0.022 -6.42 0.697 169.94 4.6 GHz 0.828 126.46 1.86 -26.01 0.025 -8.72 0.685 168.18 4.8 GHz 0.799 118.38 1.95 -33.80 0.029 -12.12 0.671 166.32 5.0 GHz 0.764 108.54 2.07 -42.55 0.034 -16.81 0.655 164.31 5.2 GHz 0.723 96.40 2.20 -52.44 0.040 -22.96 0.638 162.10 5.4 GHz 0.677 81.32 2.34 -63.62 0.047 -30.70 0.618 159.52 5.6 GHz 0.631 62.63 2.47 -76.21 0.055 -40.13 0.596 156.31 5.8 GHz 0.597 40.10 2.58 -90.17 0.063 -51.20 0.568 152.08 6.0 GHz 0.588 14.75 2.64 -105.34 0.071 -63.71 0.531 146.31 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40035F Rev 4.0 www.cree.com/rf

Product Dimensions CGH40035F (Package Type — 440193) Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40035F Rev 4.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40035F GaN HEMT Each CGH40035F-TB Test board without GaN HEMT Each CGH40035F-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40035F Rev 4.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGH40035F Rev 4.0 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGH40035F CGH40035F-TB