CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw- down, flange and solder-down, pill packages. PaPcNk’sa:g CeG THyp4e0s0:1 404F0 &1 6C6G, H& 4404001109P6 FEATURES APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 16 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 14 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 13 W typical P • Test Instrumentation SAT • 65 % Efficiency at P • Class A, AB, Linear amplifiers suitable for SAT • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M – 0 .4 v e R Subject to change without notice. 1 www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 4.0 mA 25˚C GMAX Maximum Drain Current1 I 1.5 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 60 in-oz Thermal Resistance, Junction to Case3 R 8.0 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40010F at P = 14 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 200 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 3.6 mA BR DC GS D RF Characteristics2 (T = 25˚C, F = 3.7 GHz unless otherwise noted) C 0 Small Signal Gain G 12.5 14.5 – dB V = 28 V, I = 200 mA SS DD DQ Power Output3 P 10 12.5 – W V = 28 V, I = 200 mA SAT DD DQ Drain Efficiency4 η 55 65 – % V = 28 V, I = 200 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 200 mA, DD DQ P = 10 W CW OUT Dynamic Characteristics Input Capacitance C – 4.5 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 1.3 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.2 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-AMP. 3 P is defined as I = 0.36 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40010 Rev 4.0 www.cree.com/rf

CGH40010 Nominal Fixture Performance Typical Performance Small Signal Gain and Return Loss vs Frequency of the CGH400S10 p ian rtahem CeGteHr4s0010-AMP 20 3.4 GHz 3.8 GHz 14.9 dB 14.31 dB B) 10 3.6 GHz 3.7 GHz d 14.89 dB 14.7 dB ( s s o L n r 0 u 3.7 GHz t e -7.49 dB R ), B d (-10 n DB(|S(2,1)|) ai Fixture_2_G28V1L2w1_43_42 G 3.4 GHz 3.6 GHz 3.8 GHz DB(|S(1,1)|) -10.65 dB -7.497 dB -8.549 dB Fixture_2_G28V1L2w1_43_42 -20 2.5 3 3.5 4 4.5 Frequency (GHz) P , Gain, and Drain Efficiency vs Frequency of the SPAsTat,Gain,andDrainEfficiencyvsFrequencyofthe CGH40010F in the CGH40010-AMP CGH40010FintheCGH40010-TB V = 28 V, I = 200 mA VDDDD=28V,IDDQQ=200mA 18 80 17 70 Efficiency 16 60 B)B) %)%) dd 15 50 (( (( Gain yy nn cc aiai enen GG 14 40 cici W),W), EffiEffi (( nn PSAT13 PSAT 30 DraiDrai Psat 12 Gain 20 DrainEff 11 10 10 0 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40010 Rev 4.0 www.cree.com/rf

Typical Performance Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 2.0 GHz SweptCWDataofCGH40015Fvs.OutputPowerwithSource andLoadImpedVanc e=s O2p8ti mVi,z eIdf o=r D2r0ai0n EmffiAciencyat2.0GHz VDD=D2D8V,IDQ=20D0QmA,Freq=2.0GHz 18 80 70 17 60 16 %) 50 y( c B) en d ci n( 15 40 Effi ai n G ai 30 Dr 14 20 13 10 12 0 26 28 30 32 34 36 38 40 42 Pout(dBm) Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for Drain Efficiency at 3.6 GHz SweptCWDataofCGH40015Fvs.OutputPowerwithSource andLoadImpedVanc e=s O2p8ti mVi,z eIdf o=r D2r0ai0n EmffiAciencyat3.6GHz DD DQ VDD=28V,IDQ=200mA,Freq=3.6GHz 16 80 72 15 64 56 14 %) ( 48 y B) nc d e Gain( 13 40 Effici 32 n ai 12 Dr 24 16 11 8 10 0 23 25 27 29 31 33 35 37 39 41 43 Pout(dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40010 Rev 4.0 www.cree.com/rf

Typical Performance Swept CW Data of CGH40010F vs. Output Power with Source and Load Impedances Optimized for P1 Power at 3.6 GHz SweptCWDataofCGH40015Fvs.OutputPowerwithSource andLoadImpVeda n=c e2s8O pVt,im Iize d= fo2r0P01 PmowAerat3.6GHz VDD=2D8DV,IDQ=200DQmA,Freq=3.6GHz 14 60 54 13 48 42 12 %) ( 36 y B) nc d e Gain( 11 30 Effici 24 n ai 10 Dr 18 12 9 6 8 0 23 25 27 29 31 33 35 37 39 41 43 Pout(dBm) Simulated Maximum Available Gain and K Factor of the CGH40010F V = 28 V, I = 200 mA DD DQ ) B r o d t ( c G a A F M K Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40010 Rev 4.0 www.cree.com/rf

Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40010F V = 28 V, I = 100 mA DD DQ ) B d s) e ( m r h u O g ( Fi e e nc ois ta m N esis u R m e Mini Nois Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40010 Rev 4.0 www.cree.com/rf

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 20.2 + j16.18 51.7 + j15.2 1000 8.38 + j9.46 41.4 + j28.5 1500 7.37 + j0 28.15 + j29 2500 3.19 - j4.76 19 + j9.2 3500 3.18 - j13.3 14.6 + j7.46 Note 1. V = 28V, I = 200mA in the 440166 package. DD DQ Note 2. Optimized for power, gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40010 Power Dissipation De-rating Curve CGH40010FCWPowerDissipationDe-ratingCurve 16 14 12 W)W) (( nn oo 10 atiati pp sisi DisDis 8 erer Note1 ww oo 6 PP 4 2 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40010 Rev 4.0 www.cree.com/rf

CGH40010-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1,R2 RES,1/16W,0603,1%,0 OHMS 1 R3 RES,1/16W,0603,1%,47 OHMS 1 R4 RES,1/16W,0603,1%,100 OHMS 1 C6 CAP, 470PF, 5%,100V, 0603 1 C17 CAP, 33 UF, 20%, G CASE 1 C16 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C8 CAP 10UF 16V TANTALUM 1 C14 CAP, 100.0pF, +/-5%, 0603 1 C1 CAP, 0.5pF, +/-0.05pF, 0603 1 C2 CAP, 0.7pF, +/-0.1pF, 0603 1 C10,C11 CAP, 1.0pF, +/-0.1pF, 0603 2 C4,C12 CAP, 10.0pF,+/-5%, 0603 2 C5,C13 CAP, 39pF, +/-5%, 0603 2 C7,C15 CAP,33000PF, 0805,100V, X7R 2 J3,J4 CONN SMA STR PANEL JACK RECP 1 J2 HEADER RT>PLZ.1CEN LK 2 POS 1 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 Q1 CGH40010F or CGH40010P 1 CGH40010-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40010 Rev 4.0 www.cree.com/rf

CGH40010-AMP Demonstration Amplifier Circuit Schematic CGH40010-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40010 Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40010 (Small Signal, V = 28 V, I = 100 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.909 -123.34 17.19 108.22 0.027 21.36 0.343 -90.81 600 MHz 0.902 -133.06 14.86 101.82 0.028 15.60 0.329 -98.65 700 MHz 0.897 -140.73 13.04 96.45 0.028 10.87 0.321 -104.84 800 MHz 0.894 -146.96 11.58 91.78 0.029 6.84 0.317 -109.84 900 MHz 0.891 -152.16 10.41 87.61 0.029 3.33 0.316 -113.95 1.0 GHz 0.890 -156.60 9.43 83.82 0.029 0.19 0.318 -117.42 1.1 GHz 0.889 -160.47 8.62 80.31 0.029 -2.66 0.321 -120.40 1.2 GHz 0.888 -163.90 7.93 77.02 0.029 -5.28 0.326 -123.02 1.3 GHz 0.887 -166.99 7.34 73.90 0.029 -7.72 0.332 -125.36 1.4 GHz 0.887 -169.80 6.82 70.92 0.029 -10.01 0.338 -127.51 1.5 GHz 0.887 -172.39 6.38 68.05 0.029 -12.18 0.345 -129.50 1.6 GHz 0.887 -174.80 5.98 65.28 0.028 -14.24 0.353 -131.37 1.7 GHz 0.887 -177.07 5.63 62.59 0.028 -16.21 0.360 -133.15 1.8 GHz 0.887 -179.22 5.32 59.97 0.028 -18.09 0.369 -134.87 1.9 GHz 0.887 178.73 5.04 57.41 0.028 -19.91 0.377 -136.54 2.0 GHz 0.888 176.76 4.78 54.89 0.027 -21.66 0.385 -138.17 2.1 GHz 0.888 174.86 4.55 52.42 0.027 -23.35 0.393 -139.77 2.2 GHz 0.888 173.02 4.34 49.99 0.027 -24.98 0.402 -141.34 2.3 GHz 0.888 171.23 4.15 47.60 0.026 -26.56 0.410 -142.90 2.4 GHz 0.889 169.48 3.97 45.24 0.026 -28.08 0.418 -144.45 2.5 GHz 0.889 167.76 3.81 42.90 0.026 -29.55 0.426 -145.99 2.6 GHz 0.890 166.07 3.66 40.59 0.025 -30.98 0.434 -147.53 2.7 GHz 0.890 164.39 3.53 38.30 0.025 -32.36 0.442 -149.06 2.8 GHz 0.890 162.74 3.40 36.03 0.025 -33.69 0.450 -150.59 2.9 GHz 0.891 161.10 3.28 33.78 0.024 -34.97 0.458 -152.12 3.0 GHz 0.891 159.46 3.17 31.55 0.024 -36.20 0.465 -153.65 3.2 GHz 0.892 156.21 2.97 27.12 0.023 -38.51 0.479 -156.72 3.4 GHz 0.893 152.96 2.79 22.73 0.022 -40.63 0.493 -159.80 3.6 GHz 0.893 149.69 2.64 18.38 0.022 -42.52 0.505 -162.90 3.8 GHz 0.894 146.38 2.50 14.05 0.021 -44.17 0.517 -166.03 4.0 GHz 0.894 143.03 2.38 9.72 0.020 -45.56 0.527 -169.19 4.2 GHz 0.894 139.61 2.28 5.40 0.019 -46.67 0.537 -172.39 4.4 GHz 0.895 136.11 2.18 1.07 0.019 -47.46 0.546 -175.64 4.6 GHz 0.895 132.53 2.09 -3.29 0.018 -47.90 0.554 -178.95 4.8 GHz 0.895 128.85 2.01 -7.68 0.017 -47.96 0.561 177.69 5.0 GHz 0.895 125.06 1.94 -12.10 0.017 -47.61 0.568 174.25 5.2 GHz 0.895 121.15 1.88 -16.58 0.016 -46.84 0.573 170.72 5.4 GHz 0.895 117.11 1.82 -21.12 0.016 -45.67 0.578 167.10 5.6 GHz 0.895 112.94 1.77 -25.73 0.015 -44.12 0.582 163.38 5.8 GHz 0.895 108.62 1.72 -30.42 0.015 -42.30 0.586 159.54 6.0 GHz 0.895 104.15 1.68 -35.20 0.015 -40.33 0.589 155.56 To download the s-parameters in s2p format, go to the CGH40010 Product page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40010 Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40010 (Small Signal, V = 28 V, I = 200 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.911 -130.62 18.41 105.41 0.022 19.44 0.303 -112.24 600 MHz 0.906 -139.65 15.80 99.47 0.023 14.31 0.299 -119.83 700 MHz 0.902 -146.70 13.80 94.50 0.023 10.17 0.298 -125.50 800 MHz 0.899 -152.41 12.22 90.19 0.023 6.68 0.299 -129.85 900 MHz 0.898 -157.17 10.96 86.34 0.024 3.67 0.302 -133.28 1.0 GHz 0.896 -161.24 9.92 82.82 0.024 0.99 0.305 -136.05 1.1 GHz 0.896 -164.79 9.06 79.56 0.024 -1.41 0.309 -138.34 1.2 GHz 0.895 -167.95 8.33 76.49 0.024 -3.62 0.314 -140.30 1.3 GHz 0.895 -170.80 7.70 73.57 0.023 -5.66 0.320 -142.01 1.4 GHz 0.894 -173.41 7.17 70.78 0.023 -7.56 0.326 -143.54 1.5 GHz 0.894 -175.82 6.70 68.08 0.023 -9.35 0.332 -144.94 1.6 GHz 0.894 -178.09 6.28 65.47 0.023 -11.05 0.338 -146.24 1.7 GHz 0.894 179.78 5.92 62.92 0.023 -12.66 0.345 -147.48 1.8 GHz 0.894 177.75 5.59 60.43 0.023 -14.19 0.352 -148.68 1.9 GHz 0.894 175.81 5.30 57.99 0.023 -15.65 0.358 -149.84 2.0 GHz 0.894 173.94 5.04 55.59 0.022 -17.05 0.365 -150.99 2.1 GHz 0.894 172.13 4.80 53.23 0.022 -18.39 0.372 -152.12 2.2 GHz 0.894 170.37 4.58 50.91 0.022 -19.67 0.379 -153.26 2.3 GHz 0.895 168.65 4.38 48.61 0.022 -20.90 0.386 -154.39 2.4 GHz 0.895 166.96 4.20 46.33 0.021 -22.08 0.393 -155.54 2.5 GHz 0.895 165.30 4.03 44.08 0.021 -23.20 0.400 -156.69 2.6 GHz 0.895 163.66 3.88 41.84 0.021 -24.27 0.407 -157.85 2.7 GHz 0.895 162.04 3.74 39.63 0.021 -25.28 0.414 -159.03 2.8 GHz 0.895 160.43 3.60 37.43 0.020 -26.25 0.420 -160.22 2.9 GHz 0.896 158.83 3.48 35.24 0.020 -27.16 0.427 -161.42 3.0 GHz 0.896 157.24 3.37 33.06 0.020 -28.02 0.433 -162.64 3.2 GHz 0.896 154.06 3.16 28.74 0.019 -29.57 0.446 -165.13 3.4 GHz 0.896 150.87 2.98 24.44 0.019 -30.88 0.457 -167.69 3.6 GHz 0.896 147.66 2.82 20.16 0.018 -31.95 0.468 -170.31 3.8 GHz 0.897 144.41 2.68 15.89 0.018 -32.76 0.478 -173.00 4.0 GHz 0.897 141.10 2.56 11.61 0.017 -33.30 0.488 -175.77 4.2 GHz 0.897 137.72 2.45 7.33 0.017 -33.55 0.497 -178.61 4.4 GHz 0.897 134.26 2.35 3.03 0.017 -33.50 0.505 178.47 4.6 GHz 0.897 130.71 2.26 -1.31 0.016 -33.18 0.512 175.46 4.8 GHz 0.896 127.06 2.17 -5.68 0.016 -32.58 0.518 172.36 5.0 GHz 0.896 123.30 2.10 -10.09 0.016 -31.74 0.524 169.16 5.2 GHz 0.896 119.42 2.04 -14.57 0.016 -30.72 0.529 165.86 5.4 GHz 0.896 115.41 1.98 -19.10 0.016 -29.60 0.534 162.44 5.6 GHz 0.896 111.26 1.92 -23.71 0.016 -28.46 0.537 158.89 5.8 GHz 0.895 106.97 1.87 -28.40 0.017 -27.41 0.540 155.20 6.0 GHz 0.895 102.53 1.82 -33.19 0.017 -26.54 0.543 151.36 To download the s-parameters in s2p format, go to the CGH40010 Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40010 Rev 4.0 www.cree.com/rf

Typical Package S-Parameters for CGH40010 (Small Signal, V = 28 V, I = 500 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.914 -135.02 18.58 103.70 0.020 18.36 0.300 -126.80 600 MHz 0.909 -143.57 15.88 98.05 0.020 13.67 0.302 -133.51 700 MHz 0.906 -150.23 13.83 93.33 0.021 9.90 0.304 -138.40 800 MHz 0.904 -155.61 12.23 89.23 0.021 6.77 0.307 -142.08 900 MHz 0.903 -160.09 10.95 85.56 0.021 4.08 0.311 -144.94 1.0 GHz 0.902 -163.93 9.91 82.21 0.021 1.71 0.314 -147.23 1.1 GHz 0.901 -167.29 9.04 79.09 0.021 -0.41 0.319 -149.10 1.2 GHz 0.901 -170.29 8.31 76.15 0.021 -2.35 0.323 -150.69 1.3 GHz 0.900 -173.00 7.69 73.35 0.021 -4.12 0.328 -152.07 1.4 GHz 0.900 -175.50 7.15 70.66 0.021 -5.78 0.333 -153.29 1.5 GHz 0.900 -177.81 6.69 68.07 0.021 -7.32 0.338 -154.41 1.6 GHz 0.900 -179.98 6.27 65.54 0.021 -8.77 0.344 -155.44 1.7 GHz 0.900 177.96 5.91 63.08 0.020 -10.15 0.349 -156.43 1.8 GHz 0.899 176.00 5.59 60.67 0.020 -11.45 0.355 -157.38 1.9 GHz 0.899 174.12 5.30 58.30 0.020 -12.68 0.361 -158.30 2.0 GHz 0.899 172.31 5.04 55.97 0.020 -13.85 0.366 -159.22 2.1 GHz 0.899 170.54 4.80 53.67 0.020 -14.96 0.372 -160.14 2.2 GHz 0.900 168.83 4.58 51.40 0.020 -16.01 0.378 -161.06 2.3 GHz 0.900 167.15 4.39 49.16 0.019 -17.01 0.384 -161.99 2.4 GHz 0.900 165.49 4.21 46.94 0.019 -17.95 0.390 -162.93 2.5 GHz 0.900 163.87 4.04 44.73 0.019 -18.85 0.396 -163.88 2.6 GHz 0.900 162.26 3.89 42.54 0.019 -19.69 0.402 -164.86 2.7 GHz 0.900 160.66 3.75 40.37 0.019 -20.48 0.407 -165.85 2.8 GHz 0.900 159.08 3.62 38.21 0.019 -21.21 0.413 -166.86 2.9 GHz 0.900 157.51 3.50 36.05 0.018 -21.89 0.418 -167.89 3.0 GHz 0.900 155.93 3.39 33.91 0.018 -22.52 0.424 -168.95 3.2 GHz 0.900 152.79 3.18 29.65 0.018 -23.61 0.435 -171.12 3.4 GHz 0.900 149.64 3.00 25.40 0.017 -24.48 0.445 -173.38 3.6 GHz 0.900 146.45 2.85 21.17 0.017 -25.11 0.454 -175.73 3.8 GHz 0.900 143.23 2.71 16.93 0.017 -25.51 0.463 -178.17 4.0 GHz 0.900 139.94 2.58 12.69 0.017 -25.67 0.471 179.30 4.2 GHz 0.900 136.58 2.47 8.43 0.016 -25.60 0.479 176.67 4.4 GHz 0.899 133.14 2.38 4.15 0.016 -25.32 0.486 173.94 4.6 GHz 0.899 129.61 2.29 -0.17 0.016 -24.85 0.492 171.12 4.8 GHz 0.899 125.97 2.21 -4.53 0.016 -24.24 0.498 168.18 5.0 GHz 0.898 122.23 2.13 -8.94 0.016 -23.54 0.503 165.13 5.2 GHz 0.898 118.36 2.07 -13.41 0.016 -22.80 0.507 161.96 5.4 GHz 0.898 114.36 2.01 -17.95 0.017 -22.11 0.511 158.66 5.6 GHz 0.897 110.22 1.95 -22.56 0.017 -21.54 0.514 155.22 5.8 GHz 0.897 105.94 1.90 -27.26 0.018 -21.16 0.517 151.63 6.0 GHz 0.897 101.51 1.86 -32.04 0.019 -21.04 0.519 147.87 To download the s-parameters in s2p format, go to the CGH40010 Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40010 Rev 4.0 www.cree.com/rf

Product Dimensions CGH40010F (Package Type — 440166) Product Dimensions CGH40010P (Package Type — 440196) Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40010 Rev 4.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40010F GaN HEMT Each CGH40010P GaN HEMT Each CGH40010F-TB Test board without GaN HEMT Each CGH40010F-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGH40010 Rev 4.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 15 CGH40010 Rev 4.0 www.cree.com/rf

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