CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Package Types: 440203 PN’s: CGH40006S FEATURES APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 13 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 11 dB Small Signal Gain at 6.0 GHz • Cellular Infrastructure • 8 W typical at P = 32 dBm • Test Instrumentation IN • 65 % Efficiency at P = 32 dBm • Class A, AB, Linear amplifiers suitable for IN • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms • 3mm x 3mm Package 7 1 0 2 lir p A – 1 .3 v e R Subject to change without notice. 1 www.cree.com/wireless

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 175 ˚C J Maximum Forward Gate Current I 2.1 mA 25˚C GMAX Maximum Drain Current1 I 0.75 A 25˚C DMAX Soldering Temperature2 T 260 ˚C S Thermal Resistance, Junction to Case3,4 R 10.1 ˚C/W 85˚C θJC Case Operating Temperature3,4 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006S at P = 8 W. DISS 4 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal C resistance. The RTH for Cree’s demonstration amplifier, CGH40006S-AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1°C. The total Rth from the heat sink to the junction is 10.1°C +5.1°C = 15.2 °C/W. Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2.1 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 100 mA GS(Q) DC DS D Saturated Drain Current I 1.7 2.1 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 2.1 mA BR DC GS D RF Characteristics2 (T = 25˚C, F = 5.8 GHz unless otherwise noted) C 0 Small Signal Gain G 10 11.8 – dB V = 28 V, I = 100 mA SS DD DQ Power Output at P = 30 dBm P 5 6.9 – W V = 28 V, I = 100 mA IN OUT DD DQ Drain Efficiency3 η 40 53 – % V = 28 V, I = 100 mA, P = 30 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 32 dBm IN Dynamic Characteristics Input Capacitance C – 2.7 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 0.8 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.1 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in Cree’s narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Small Signal Gain vs Frequency at 28 V of the CGH40006S Sin-p tahrea mCGetHer40006S-AMP1 16 14 12 10 B)B) dd n(n( 8 aiai GG 6 4 CGH40006S-S21 2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Input & Output Return Losses vs Frequency at 28 V of the CGH40006SS-p ianr athmee CteGrH40006S-AMP1 0 -2 -4 -6 -8 -10 B)B) dd--1122 (( nn aiai-14 GG -16 -18 -20 -22 CGH40006S-S11 -24 CGH40006S-S22 -26 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V = 28 V, I = 100 mA DD GainvDsQ.Pout 20 2.0GHz 18 3.0GHz 4.0GHz 16 5.0GHz 6.0GHz 14 12 B)B) dd n(n(10 aiai GG 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 OutputPower(dBm) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V = 28 V, I = 100 mA DDEFFvsouDtQputpower 70% 2.0GHz 60% 3.0GHz 4.0GHz 5.0GHz 50% 6.0GHz yy cc nn ee40% cici EffiEffi nn aiai30% DrDr 20% 10% 0% 20 22 24 26 28 30 32 34 36 38 40 OutputPower(dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V = 28 V, I = 100 mA DDGainvsinDQputpower 14 12 10 B)B) 8 dd (( nn aiai GG 6 2.0GHz 4 3.0GHz 4.0GHz 5.0GHz 2 6.0GHz 0 10 12 14 16 18 20 22 24 26 28 30 32 34 InputPower(dBm) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 V D =ra 2in8E Vff,i cIien c=y 1v0s.0P minA DD DQ 100% 90% 2.0GHz 3.0GHz 80% 4.0GHz 5.0GHz 70% 6.0GHz yy cc 60% nn ee cici EffiEffi 50% nn aiai DrDr 40% 30% 20% 10% 0% 10 12 14 16 18 20 22 24 26 28 30 32 34 InputPower(dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Power Gain vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P = 32 dBm, V = 28 V Gain@Pin32dINBm DD 10 9 8 7 6 B)B) dd n(n( 5 GaiGai 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Output Power vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P = 32 dBm, V = 28 V IN DD Power(w)@Pin32dBm 12 10 8 W)W) wer(wer( PoPo 6 utut pp utut OO 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-AMP1 at P = 32 dBm, V = 28 V Drainefficiency@PiInN32dBm DD 70% 60% 50% EfficiencyEfficiency40% DrainDrain30% 20% 10% 0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 IVM3 =vs 2T8o Vta, lIou =tp 6u0t pmoAwer DD DQ 0 2.0GHz -10 3.0GHz 4.0GHz 5.0GHz -20 6.0GHz c)c) BB (d(d-30 33 MM II -40 -50 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 OutputPower(dBm) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Symbol Level Test Methodology Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20 Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40006S Rev 3.1 www.cree.com/rf

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40006S V = 28 V, I = 100 mA DD DQ ) r B o d ct G ( Fa A K M Note 1. On a 20 mil thick PCB. Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S V = 28 V, I = 100 mA DD DQ ) B ) d s ( m e h ur O g ( i e F c e n s a oi st N si m e R u m e s ni oi Mi N Note 1. On a 20 mil thick PCB. Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40006S Rev 3.1 www.cree.com/rf

CGH40006S CW Power Dissipation De-rating Curve PowerDissipationderatingCurvevsmaxTcase 10 9 8 7 W) ( on 6 ati p si 5 s Di er 4 w o P 3 Note 1 2 1 0 0 25 50 75 100 125 150 175 200 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1000 12.7 + j20.2 62.3 + j42 2000 5.98 + j6.81 32.7 + j32.9 3000 3.32 - j2.89 19.2 + j29.8 4000 2.38 - j9.45 15.2 + j15.7 5000 2.62 - j15.6 9.98 + j9.6 6000 1.94 - j21.35 8.51 + j2.07 Note 1. V = 28V, I = 100mA in the 440203 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB). Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40006S Rev 3.1 www.cree.com/rf

CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms (≤5% tolerance) 1 R3 RES, AIN, 0505, 360 Ohms (≤5% tolerance) 1 C1 CAP, 1.3 pF +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 2.7 pF +/-0.25 pF, 0603, ATC 600S 1 C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2 C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO5880, 0.020” THK 1 Q1 CGH40006S 1 CGH40006S-AMP1 Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40006S Rev 3.1 www.cree.com/rf

CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic CGH40006S-AMP1 Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40006S Rev 3.1 www.cree.com/rf

Typical Package S-Parameters for CGH40006S (Small Signal, V = 28 V, I = 100 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.933 -92.95 18.74 125.47 0.024 38.02 0.459 -48.87 600 MHz 0.922 -104.26 16.89 118.64 0.026 31.70 0.428 -54.78 700 MHz 0.912 -113.77 15.28 112.75 0.028 26.33 0.402 -59.82 800 MHz 0.905 -121.83 13.90 107.61 0.029 21.71 0.381 -64.21 900 MHz 0.899 -128.73 12.70 103.06 0.030 17.68 0.365 -68.10 1.0 GHz 0.894 -134.72 11.67 98.96 0.030 14.11 0.352 -71.62 1.1 GHz 0.891 -139.97 10.77 95.23 0.030 10.91 0.342 -74.86 1.2 GHz 0.888 -144.62 9.99 91.80 0.031 8.00 0.334 -77.87 1.3 GHz 0.886 -148.78 9.31 88.61 0.031 5.34 0.328 -80.72 1.4 GHz 0.884 -152.55 8.71 85.61 0.031 2.88 0.325 -83.43 1.5 GHz 0.883 -155.97 8.17 82.77 0.031 0.58 0.322 -86.03 1.6 GHz 0.881 -159.12 7.69 80.07 0.031 -1.57 0.321 -88.54 1.7 GHz 0.881 -162.04 7.26 77.49 0.031 -3.60 0.321 -90.98 1.8 GHz 0.880 -164.75 6.88 75.00 0.031 -5.53 0.321 -93.35 1.9 GHz 0.879 -167.29 6.53 72.60 0.031 -7.38 0.323 -95.67 2.0 GHz 0.879 -169.68 6.21 70.26 0.031 -9.14 0.325 -97.94 2.1 GHz 0.879 -171.94 5.92 68.00 0.030 -10.83 0.327 -100.17 2.2 GHz 0.879 -174.09 5.65 65.79 0.030 -12.46 0.330 -102.36 2.3 GHz 0.879 -176.14 5.40 63.62 0.030 -14.03 0.334 -104.51 2.4 GHz 0.879 -178.10 5.18 61.51 0.030 -15.55 0.338 -106.63 2.5 GHz 0.879 -179.98 4.97 59.43 0.030 -17.02 0.342 -108.71 2.6 GHz 0.879 178.20 4.77 57.38 0.029 -18.44 0.346 -110.77 2.7 GHz 0.879 176.44 4.59 55.37 0.029 -19.83 0.351 -112.81 2.8 GHz 0.879 174.74 4.42 53.39 0.029 -21.18 0.355 -114.82 2.9 GHz 0.879 173.09 4.26 51.43 0.029 -22.48 0.360 -116.80 3.0 GHz 0.880 171.49 4.11 49.50 0.028 -23.76 0.366 -118.76 3.2 GHz 0.880 168.39 3.84 45.70 0.028 -26.20 0.376 -122.63 3.4 GHz 0.881 165.43 3.60 41.97 0.027 -28.51 0.387 -126.41 3.6 GHz 0.882 162.57 3.38 38.31 0.026 -30.70 0.399 -130.13 3.8 GHz 0.883 159.81 3.19 34.71 0.025 -32.75 0.410 -133.78 4.0 GHz 0.884 157.13 3.01 31.16 0.025 -34.68 0.422 -137.38 4.2 GHz 0.885 154.52 2.85 27.65 0.024 -36.47 0.433 -140.91 4.4 GHz 0.887 151.96 2.71 24.19 0.023 -38.12 0.445 -144.40 4.6 GHz 0.888 149.45 2.57 20.77 0.022 -39.63 0.457 -147.84 4.8 GHz 0.889 146.98 2.45 17.38 0.022 -40.97 0.468 -151.24 5.0 GHz 0.890 144.55 2.33 14.03 0.021 -42.15 0.480 -154.60 5.2 GHz 0.892 142.15 2.23 10.71 0.020 -43.15 0.491 -157.92 5.4 GHz 0.893 139.78 2.13 7.41 0.019 -43.95 0.503 -161.20 5.6 GHz 0.894 137.43 2.04 4.15 0.018 -44.53 0.514 -164.45 5.8 GHz 0.896 135.11 1.95 0.91 0.018 -44.89 0.525 -167.66 6.0 GHz 0.897 132.80 1.87 -2.30 0.017 -45.00 0.535 -170.85 To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab. Note 2. On a 20 mil thick PCB. Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40006S Rev 3.1 www.cree.com/rf

Product Dimensions CGH40006S (Package Type — 440203) Pin Input/Output 1 GND 2 RF IN 3 GND 4 GND 5 RF OUT 6 GND Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40006S Rev 3.1 www.cree.com/rf

Tape & Reel Dimensions Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGH40006S Rev 3.1 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure CGH40006S GaN HEMT Each CGH40006S-AMP1 Test board with GaN HEMT installed Each CGH40006S-TR Delivered in Tape and Reel 200 parts / reel Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 15 CGH40006S Rev 3.1 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.407.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 16 CGH40006S Rev 3.1 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGH40006S-KIT CGH40006S