CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. Package Types: 440109 PN’s: CGH40006P FEATURES APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 13 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 11 dB Small Signal Gain at 6.0 GHz • Cellular Infrastructure • 8 W typical at P = 32 dBm • Test Instrumentation IN • 65 % Efficiency at P = 32 dBm • Class A, AB, Linear amplifiers suitable for IN • 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 5 1 0 2 y a M – 0 .3 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 2.1 mA 25˚C GMAX Maximum Drain Current1 I 0.75 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Thermal Resistance, Junction to Case3 R 9.5 ˚C/W 85˚C θJC Case Operating Temperature3 T -40, +150 ˚C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006P at P = 8 W. DISS Electrical Characteristics (T = 25˚C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2.1 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 28 V, I = 100 mA GS(Q) DC DS D Saturated Drain Current I 1.7 2.1 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 – – V V = -8 V, I = 2.1 mA BR DC GS D RF Characteristics2 (T = 25˚C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 11.5 13 – dB V = 28 V, I = 100 mA SS DD DQ Power Output at P = 32 dBm P 7.0 9 – W V = 28 V, I = 100 mA IN OUT DD DQ Drain Efficiency3 η 53 65 – % V = 28 V, I = 100 mA, P = 32 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR – – 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 32 dBm IN Dynamic Characteristics Input Capacitance C – 3.0 – pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 1.1 – pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 0.1 – pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40006P-AMP. 3 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGH40006P Rev 3.0 www.cree.com/rf

Typical Performance Small Signal Gain vs Frequency at 28 V Input & Output Return Losses vs Frequency of the CGH40006P in the CGH40006P-AMP 28 V of the CGH40006P in the CGH40006P-AMP S-parameter28V S-parameter28V 20 0 18 -2 16 -4 14 -6 12 -8 B)B) B)B) Gain(dGain(d10 Gain(dGain(d-10 8 -12 6 -14 S11 4 -16 S22 2 -18 0 -20 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Frequency(GHz) Frequency(GHz) Small Signal Gain vs Frequency at 20 V Input & Output Return Losses vs Frequency at of the CGH40006P in the CGH40006P-AMP 20 V of the CGH40006P in the CGH40006P-AMP S-parameter20V S-parameter20V 20 0 18 -2 16 -4 14 -6 12 -8 B)B) B)B) Gain(dGain(d10 Gain(dGain(d-10 8 -12 6 -14 S22 4 -16 S11 2 -18 0 -20 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Frequency(GHz) Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGH40006P Rev 3.0 www.cree.com/rf

Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP GaiVnvs =O u2t8pu Vt,p Iow e=r, 12,030,4 ,m5&A6GHz DD DQ 20 2.0GHz 18 3.0GHz 4.0GHz 16 5.0GHz 6.0GHz 14 12 B)B) dd n(n(10 aiai GG 8 6 4 2 0 20 25 30 35 40 OutputPower(dBm) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP VEff =vs 2P8o Vut,, I2,3 ,=4 ,510706 GmHAz DD DQ 70% 2.0GHz 60% 3.0GHz 4.0GHz 5.0GHz 50% 6.0GHz y c n 40% e ci Effi n ai 30% Dr 20% 10% 0% 20 25 30 35 40 OutputPower(dBm) Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGH40006P Rev 3.0 www.cree.com/rf

Typical Performance Power Gain vs Frequency of the CGH40006P Power Gain vs Frequency of the CGH40006P in the CGH40006P-AMP at P = 32 dBm, V = 28 V in the CGH40006P-AMP at P = 30 dBm, V = 20 V Gain@PiInN32dBm DD IN PowerGain20V-PDiDn30dBm 10 10 9 9 8 8 7 7 6 6 Gain(dB)Gain(dB) 5 Gain(dB)Gain(dB) 5 4 4 3 3 2 2 1 1 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Frequency(GHz) Output Power vs Frequency of the CGH40006P Output Power vs Frequency of the CGH40006P in the CGH40006P-AMP at P = 32 dBm, V = 28 V in the CGH40006P-AMP at P = 30 dBm, V = 20 V Power(w)@INPin32dBm DD IN Pout@20DVD 12 12 10 10 8 8 W)W) W)W) wer(wer( wer(wer( PoPo 6 PoPo 6 OutputOutput OutputOutput 4 4 2 2 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Frequency(GHz) Drain Efficiency vs Frequency of the CGH40006P Drain Efficiency vs Frequency of the CGH40006P in the CGH40006P-AMP at P = 32 dBm, V = 28 V in the CGH40006P-AMP at P = 30 dBm, V = 20 V EFF@PinIN32dBm DD IN EFF@20V,PinD=3D0dBm 70% 70% 60% 60% 50% 50% EfficiencyEfficiency40% EfficiencyEfficiency40% DrainDrain30% DrainDrain30% 20% 20% 10% 10% 0% 0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency(GHz) Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGH40006P Rev 3.0 www.cree.com/rf

Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-AMP VIM 3=v 2s8. tVo,t aIlo u=t p6u0t pmowAer DD DQ 0.0 2.0GHz -10.0 3.0GHz 4.0GHz 5.0GHz -20.0 6.0GHz c)c) BB dd ((-30.0 33 MM II -40.0 -50.0 -60.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 OutputPower(dBm) Simulated Maximum Available Gain and K Factor of the CGH40006P V = 28 V, I = 100 mA DD DQ ) r B o d ct G ( Fa A K M Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGH40006P Rev 3.0 www.cree.com/rf

Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P V = 28 V, I = 100 mA DD DQ ) B ) d s ( m e h r O u Fig ce ( e n s a oi st N si m Re mu se ni oi Mi N Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGH40006P Rev 3.0 www.cree.com/rf

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1000 13.78 + j6.9 61.5 + j47.4 2000 4.78 + j1.78 19.4 + j39.9 3000 2.57 - j6.94 12.57 + j23.1 4000 3.54 - j14.86 9.44 + j11.68 5000 4.42 - j25.8 9.78 + j4.85 6000 7.1 - j42.7 9.96 - j4.38 Note 1. V = 28V, I = 100mA in the 440109 package. DD DQ Note 2. Optimized for power gain, P and PAE. SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40006P Power Dissipation De-rating Curve PowerDissipationderatingCurvevsmaxTcase 9 8 7 W)W)6 (( nn oo atiati5 pp sisi Note1 ss DiDi4 erer ww oo PP3 2 1 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGH40006P Rev 3.0 www.cree.com/rf

CGH40006P-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1 R2 RES, AIN, 0505, 10 Ohms (≤5% tolerance) 1 R3 RES, AIN, 0505, 150 Ohms (≤5% tolerance) 1 C1 CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S 1 C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2 C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO5880, 20 MIL 1 Q1 CGH40006P 1 CGH40006P-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGH40006P Rev 3.0 www.cree.com/rf

CGH40006P-AMP Demonstration Amplifier Circuit Schematic CGH40006P-AMP Demonstration Amplifier Circuit Outline Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGH40006P Rev 3.0 www.cree.com/rf

Typical Package S-Parameters for CGH40006P (Small Signal, V = 28 V, I = 100 mA, angle in degrees) DS DQ Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.905 -96.56 18.30 120.62 0.023 35.87 0.456 -52.76 600 MHz 0.889 -107.98 16.39 113.31 0.025 29.63 0.429 -58.98 700 MHz 0.877 -117.55 14.76 106.99 0.026 24.39 0.408 -64.31 800 MHz 0.867 -125.66 13.37 101.43 0.027 19.92 0.393 -68.96 900 MHz 0.860 -132.61 12.19 96.46 0.028 16.05 0.381 -73.11 1.0 GHz 0.854 -138.66 11.18 91.94 0.028 12.66 0.374 -76.87 1.1 GHz 0.849 -143.98 10.31 87.79 0.028 9.64 0.368 -80.34 1.2 GHz 0.845 -148.73 9.56 83.92 0.028 6.92 0.366 -83.57 1.3 GHz 0.842 -153.01 8.90 80.29 0.028 4.46 0.365 -86.61 1.4 GHz 0.839 -156.90 8.33 76.84 0.028 2.22 0.365 -89.49 1.5 GHz 0.837 -160.49 7.82 73.56 0.028 0.15 0.367 -92.24 1.6 GHz 0.835 -163.81 7.37 70.40 0.028 -1.75 0.369 -94.88 1.7 GHz 0.833 -166.92 6.96 67.36 0.028 -3.51 0.373 -97.43 1.8 GHz 0.832 -169.85 6.60 64.41 0.028 -5.15 0.376 -99.88 1.9 GHz 0.830 -172.62 6.27 61.54 0.028 -6.67 0.381 -102.27 2.0 GHz 0.829 -175.27 5.98 58.74 0.028 -8.08 0.386 -104.58 2.1 GHz 0.828 -177.81 5.71 56.00 0.028 -9.40 0.391 -106.84 2.2 GHz 0.827 179.75 5.46 53.32 0.027 -10.61 0.396 -109.04 2.3 GHz 0.826 177.38 5.24 50.68 0.027 -11.73 0.401 -111.19 2.4 GHz 0.825 175.07 5.03 48.09 0.027 -12.77 0.407 -113.29 2.5 GHz 0.824 172.82 4.84 45.53 0.027 -13.71 0.412 -115.36 2.6 GHz 0.823 170.61 4.67 43.00 0.026 -14.57 0.418 -117.38 2.7 GHz 0.821 168.44 4.51 40.50 0.026 -15.34 0.423 -119.36 2.8 GHz 0.820 166.30 4.36 38.02 0.026 -16.02 0.428 -121.32 2.9 GHz 0.819 164.18 4.22 35.57 0.026 -16.62 0.434 -123.24 3.0 GHz 0.818 162.08 4.09 33.13 0.026 -17.13 0.439 -125.13 3.2 GHz 0.816 157.91 3.85 28.31 0.025 -17.89 0.449 -128.84 3.4 GHz 0.813 153.76 3.65 23.53 0.025 -18.30 0.458 -132.46 3.6 GHz 0.810 149.58 3.47 18.78 0.025 -18.38 0.467 -136.00 3.8 GHz 0.807 145.35 3.31 14.05 0.024 -18.13 0.474 -139.48 4.0 GHz 0.804 141.05 3.18 9.32 0.024 -17.60 0.481 -142.91 4.2 GHz 0.801 136.66 3.05 4.57 0.024 -16.82 0.488 -146.30 4.4 GHz 0.797 132.15 2.94 -0.20 0.025 -15.89 0.493 -149.67 4.6 GHz 0.793 127.50 2.85 -5.01 0.025 -14.87 0.497 -153.02 4.8 GHz 0.789 122.70 2.76 -9.86 0.026 -13.89 0.500 -156.37 5.0 GHz 0.785 117.72 2.68 -14.79 0.027 -13.04 0.503 -159.74 5.2 GHz 0.780 112.55 2.62 -19.78 0.029 -12.42 0.504 -163.14 5.4 GHz 0.776 107.17 2.55 -24.86 0.030 -12.13 0.505 -166.59 5.6 GHz 0.772 101.58 2.50 -30.03 0.032 -12.22 0.504 -170.10 5.8 GHz 0.768 95.76 2.44 -35.30 0.035 -12.75 0.503 -173.70 6.0 GHz 0.764 89.70 2.40 -40.69 0.037 -13.73 0.501 -177.41 To download the s-parameters in s2p format, go to the CGH40006P Product Page and click on the documentation tab. Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGH40006P Rev 3.0 www.cree.com/rf

Product Dimensions CGH40006P (Package Type — 440109) Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGH40006P Rev 3.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGH40006P GaN HEMT Each CGH40006P-TB Test board without GaN HEMT Each CGH40006P-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGH40006P Rev 3.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.313.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGH40006P Rev 3.0 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGH40006P-TB CGH40006P