NT *RoHS VCEOARVMSIAPILOLINAASB LE Features Applications NT MPLIA n Working voltage 3.3 V n FireWire, T1/E1, T3/E3 chip side protection O HS C n SMT - DFN package n Digital Visual Interface (DVI) Ro * n Low capacitance - 4 pF n Ethernet 10/100/1000 Base T n IEC 61000-4-2 (ESD) n High speed port protection n IEC 61000-4-4 (EFT) n Portable electronics n IEC 61000-4-5 (Surge) REE D F LEA CDDFN10-3304N - TVS/Steering Diode Array General Information Td(Sahutear g CpeDo) rDrtesF qmNu1eir0ee-tm3in3eg0n I4tEsN.C Td 6he1ev0 iTc0er0a -pn4rs-oi2ev ni(dEte SVsoD El)LtVEaS,E ARgIDDH SEISFe O,RCC NEOSESE MA6uFPRL1IEpT A0pN Ta0r*en0sd-4s So-4ur ra(gErerFa Tpy,r) o patrenocdtte iIocEntCin f go6 r1u h0pi0 gt0oh- 44s-p 5de aetda P5in lines, offers a Working Peak Voltage of 3.R3o V. Pin Pin Pin Pin 1 3 7 9 The DFN-10 packaged device will mount directly onto the industry standard DFN-10 footprint. Bourns® Chip Diodes are easy to handle with standard pick and place equipment. GND Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Parameter Symbol CDDFN10-3304N Unit Peak Pulse Power (tp = 8/20 µs) (NOTE 1) PPK 450 W Peak Pulse Current (tp = 8/20 µs) per IEC 61000-4-5 IPP 25 A Storage Temperature TSTG -55 to +150 ºC Operating Temperature TOPR -55 to +125 ºC ESD Protection per IEC 61000-4-2 kV Contact Discharge 30 max. kV Air Discharge 30 max. EFT Protection per IEC 61000-4-4 @ 5/50 ns 40 min. A Notes: 1. See Peak Pulse Power vs. Pulse Time. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Breakdown Voltage @ 1 mA VBR 3.9 V Working Peak Voltage VWM 3.3 V Leakage Current1 @ VWM ID 1 µA Clamping Voltage2 @ IP = 5 A 8/20 µs VC 15 V Clamping Voltage2 @ IP = 15 A 8/20 µs VC 18 V Clamping Voltage2 @ IP = 20 A 8/20 µs VC 20 V Junction Capacitance2 @ 0 V 1 MHz CD 4.0 5.0 pF Junction Capacitance3 @ 0 V 1 MHz CIO 1.5 pF Note 1: Pin 5 to ground. Note 2: Pin 1,3,7 or 9 to ground. Note 3: Between Pin 1,3,7 and 9. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

CDD33F1N21 0-- 233 m04mN S- MTVDS /TSrtiememriningg D Pioodtee nAtriroamyeter Rating & Characteristic Curves Peak Pulse Power vs. Pulse Time Pulse Waveform P – Peak Pulse (W)PP 101,100000000 450 W, 8/20 µs Waveform – Peak Pulse Current (% of I)PP 11246802000000 tt td =e tt|tTtItdP e =P=s/ t282 W 0µ saµvseform Parameters 10 I PP 0 0.01 1 10 100 1,000 10,000 0 5 10 15 20 25 30 td – Pulse Duration (µs) t – Time (µs) Clamping Voltage vs Peak Pulse Current Clamping Voltage vs Peak Pulse Current 22 24 20 22 18 Any I/O Pin to GND 20 Any I/O Pin to Another I/O Pin 16 18 Voltage (V) 1142 Voltage (V) 111642 mping 108 mping 10 Cla 6 Waveform Cla 86 Waveform 4 Parameters: 4 Parameters: tr = 8 µs tr = 8 µs 2 td = 20 µs 2 td = 20 µs 0 0 0 5 10 15 20 25 0 5 10 15 20 25 Peak Pulse Current (A) Peak Pulse Current (A) Typical Voltage vs. Capacitance Power Derating Curve 4.5 4.0 Any I/O Pin to GND 3.5 100 Peak Pulse Power pF) 3.0 8/20 µs e ( 80 nc 2.5 pacita 2.0 ower 60 a P nput C 1.5 Rated 40 I of 1.0 % VDD = Floating, GND = 0 V, 20 0.5 f = 1 MHz, T = 25 °C Average Power 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 Input Voltage (V) TL - Lead Temperature (°C) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

C3D31D2F N- 120 m-3m30 4SNM -D T TVrSi/mStmeeinrign gP oDtieondtei oAmrreatyer Product Dimensions Recommended Footprint 2.45 - 2.55 This is a molded DFN10 package with l(e0a.0d96 f-r e0.e10 0N)ickel-Paladium- 0.50 0.30 Gold (Ni/Pd/Au) on the lead frame. It has a flammability rating of (.020) (.012) UL 94V-0. 2.45 - 2.55 3.15 (0.096 - 0.100) 0.50 (.124) 0.30 (.020) (.012) 2.45 - 2.55 (0.096 - 0.100) 1.26 2.50 3.15 (1.0.8753) (.050) (.100) PIN 1 (.124) INDICATOR 2.45 - 2.55 (0.096 - 0.100) 1.26 2.50 1.85 (.050) (.100) PIN 1 (.073) DIMENSIONS: MM INDICATOR 0.65 2.05 (INCHES) (.026) (.081) 0.50 - 0.60 (0.020 - 0.024) Typi0c.6a5l Part Marki2n.0g5 (.026) (.081) 0.152 0.50 - 0.60 (0.006) (0.020 - 0.024) DEVICE CODE: Week Duration 334 = CDDFN10-3304N Code 0.20 - 0.30 0.50 (0.008 - 0.012) (0.020) 2 Week 1~Week 7 0.152 (0.006) 334 3 Week 8~Week 14 YWLLL 0.20 - 0.30 PIN 1 0.50 4 Week 15~Week 21 (0.008 - 0.012) (0.020) R (.00.028) 1.15 - 1.25 DATE CODE 5 Week 22~Week 28 YEAR CODE: LOT (0.045 - 0.049) 5 = 2015 TRACEABILITY 6 Week 29~Week 35 PIN 1 6 = 2016 CODE WEEK CODE: 7 Week 36~Week 42 R (.00.028) 1.15 - 1.25 45 == WWEEEEKK 1252 ttoo WWEEEEKK 2218 8 Week 43~Week 49 (0.045 - 0.049) 9 Week 50~Week 52 0.35 - 0.45 1.85 - 1.95 (0.073 - 0.077) (0.014 - 0.018) 2.10 - 2.20 Pin Out (0.083 - 0.087) 0.35 - 0.45 1.85 - 1.95 (0.073 - 0.077) (0.014 - 0.018) Pin Function 2.10 - 2.20 1 I/O (0.083 - 0.087) 2 N.C. CH1 1 10 NC 3 I/O How to Order NC 2 9 CH2 4 N.C. CD DFN10 - 33 04 N CH3 3 GND 8 NC 5 VCC (CENTER TAB) Common Diode Chip Diode NC 4 7 CH4 6 N.C. Package 7 I/O VDD 5 6 NC DFN10 = DFN-10 Package 8 N.C. Working Peak Voltage TOP VIEW 33 = 3.3 VRWM (Volts) 9 I/O Number of Lines 10 N.C. 04 = 4 Data Lines Suffix CENTER GROUND N = Low Capacitance TAB Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

CDDFN10-3304N - TVS/Steering Diode Array Packaging Information The product will be dispensed in tape and reel format (see diagram below). P 0 P1 E T d Index Hole Pin 1 Location 120 ° F D2 W B D1 D P A C Trailer Device Leader ....... ....... ....... ....... W1 End ....... ....... ....... ....... Start MM DIMENSIONS: (INCHES) 10 pitches (min.) 10 pitches (min.) Devices are packed in accordance with EIA standard Direction of Feed RS-481-A. Item Symbol DFN-10 2.80 ± 0.10 Carrier Width A (0.110 ± 0.004) 2.85 ± 0.10 Carrier Length B (0.112 ± 0.004) 1.00 ± 0.05 Carrier Depth C (0.039 ± 0.002) 1.50 +0.10/-0 Sprocket Hole d (0.059 +0.004/-0) 180 ± 3 Reel Outside Diameter D (7.087 ± 0.118) 50.0 Reel Inner Diameter D1 (1.969) MIN. 13.00 +0.50/-0.20 Feed Hole Diameter D2 (0.512 +0.020/-0.008) 1.75 ± 0.10 Sprocket Hole Position E (0.069 ± 0.004) 5.50 ± 0.05 Punch Hole Position F (0.217 ± 0.002) 4.00 ± 0.10 Punch Hole Pitch P (0.157 ± 0.004) 4.00 ± 0.10 Sprocket Hole Pitch P0 (0.157 ± 0.004) 2.00 ± 0.05 Embossment Center P1 (0.079 ± 0.002) 0.60 Overall Tape Thickness T MAX. (0.024) 12.3 Tape Width W (0.484) MAX. REV. 08/16 18.4 Specifications are subject to change without notice. Reel Width W1 (0.724) MAX. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Quantity per Reel -- 3000 Users should verify actual device performance in their specific applications.