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  • 型号: CD74HCT126M96
  • 制造商: Texas Instruments
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CD74HCT126M96产品简介:

ICGOO电子元器件商城为您提供CD74HCT126M96由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 CD74HCT126M96价格参考¥1.52-¥4.59。Texas InstrumentsCD74HCT126M96封装/规格:逻辑 - 缓冲器,驱动器,接收器,收发器, Buffer, Non-Inverting 4 Element 1 Bit per Element 3-State Output 14-SOIC。您可以下载CD74HCT126M96参考资料、Datasheet数据手册功能说明书,资料中有CD74HCT126M96 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC BUFF/DVR TRI-ST QD 14SOIC缓冲器和线路驱动器 Tri-State Quad

产品分类

逻辑 - 缓冲器,驱动器,接收器,收发器

品牌

Texas Instruments

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

逻辑集成电路,缓冲器和线路驱动器,Texas Instruments CD74HCT126M9674HCT

数据手册

点击此处下载产品Datasheet

产品型号

CD74HCT126M96

产品目录页面

点击此处下载产品Datasheet

产品种类

缓冲器和线路驱动器

传播延迟时间

24 ns at 4.5 V

低电平输出电流

6 mA

供应商器件封装

14-SOIC

元件数

4

其它名称

296-14546-6

包装

Digi-Reel®

单位重量

129.400 mg

商标

Texas Instruments

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

14-SOIC(0.154",3.90mm 宽)

封装/箱体

SOIC-14

工作温度

-55°C ~ 125°C

工厂包装数量

2500

最大工作温度

+ 125 C

最小工作温度

- 55 C

极性

Non-Inverting

标准包装

1

每元件位数

1

每芯片的通道数量

4

电压-电源

4.5 V ~ 5.5 V

电流-输出高,低

6mA,6mA

电源电压-最大

5.5 V

电源电压-最小

4.5 V

电源电流

0.08 mA

系列

CD74HCT126

输入线路数量

4

输出类型

3-State

输出线路数量

4

逻辑类型

缓冲器/线路驱动器,非反相

逻辑系列

HCT

高电平输出电流

- 6 mA

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PDF Datasheet 数据手册内容提取

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 Data sheet acquired from Harris Semiconductor SCHS144C High-Speed CMOS Logic November 1997 - Revised September 2003 Quad Buffer, Three-State Features Description • Three-State Outputs The ’HC126 and ’HCT126 contain four independent three- • Separate Output Enable Inputs statebuffers,eachhavingitsownoutputenableinput,which [ /Title when “low” puts the output in the high-impedance state. (CD74 • Fanout (Over Temperature Range) HC126 - Standard Outputs. . . . . . . . . . . . . . .10 LSTTL Loads Ordering Information , - Bus Driver Outputs . . . . . . . . . . . . .15 LSTTL Loads CD74 • Wide Operating Temperature Range . . .-55oC to 125oC PART NUMBER TEMP(.o RCA)NGE PACKAGE HCT12 • Balanced Propagation Delay and Transition Times CD54HC126F3A -55 to 125 14 Ld CERDIP 6) • Significant Power Reduction Compared to LSTTL /Sub- CD54HCT126F3A -55 to 125 14 Ld CERDIP Logic ICs ject CD74HC126E -55 to 125 14 Ld PDIP • HC Types (High - 2V to 6V Operation CD74HC126M -55 to 125 14 Ld SOIC Speed - High Noise Immunity: NIL = 30%, NIH = 30% of VCC CD74HC126MT -55 to 125 14 Ld SOIC CMOS at VCC = 5V Logic CD74HC126M96 -55 to 125 14 Ld SOIC • HCT Types Quad - 4.5V to 5.5V Operation CD74HCT126E -55 to 125 14 Ld PDIP Buffer, - Direct LSTTL Input Logic Compatibility, CD74HCT126M -55 to 125 14 Ld SOIC Three- VIL= 0.8V (Max), VIH = 2V (Min) State) - CMOS Input Compatibility, Il≤1µA at VOL, VOH CD74HCT126MT -55 to 125 14 Ld SOIC CD74HCT126M96 -55 to 125 14 Ld SOIC NOTE: When ordering, use the entire part number. The suffix 96 denotestapeandreel.ThesuffixTdenotesasmall-quantityreelof 250. Pinout CD54HC126, CD54HC126 (CERDIP) CD74HC126, CD74HC126 (PDIP, SOIC) TOP VIEW 1OE 1 14 VCC 1A 2 13 4OE 1Y 3 12 4A 2OE 4 11 4Y 2A 5 10 3OE 2Y 6 9 3A GND 7 8 3Y CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright ©2003, Texas Instruments Incorporated 1

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 Functional Diagram 1 1OE 2 3 1A 1Y 4 2OE 5 6 2A 2Y 10 3OE 9 8 3A 3Y 13 4OE 12 11 4A 4Y GND = 7 VCC= 14 TRUTH TABLE INPUTS OUTPUTS nA nOE nY H H H L H L X L Z H= High Voltage Level L= Low Voltage Level X= Don’t Care Z=High Impedance, OFF State Logic Diagram P nA nY n nOE 2

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V Thermal Resistance (Typical, Note 1) θJA (oC/W) DC Input Diode Current, IIK E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 80 For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . 86 DC Output Diode Current, IOK Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC DC Drain Current, per Output, IO Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA (SOIC - Lead Tips Only) DC Output Source or Sink Current per Output Pin, IO For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±70mA Operating Conditions Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . .-55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION:Stressesabovethoselistedin“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thisisastressonlyratingandoperation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS 25oC -40oC TO 85oC -55oC TO 125oC PARAMETER SYMBOL VI(V) IO(mA) VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS HC TYPES High Level Input VIH - - 2 1.5 - - 1.5 - 1.5 - V Voltage 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V Low Level Input VIL - - 2 - - 0.5 - 0.5 - 0.5 V Voltage 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V High Level Output VOH VIH or -0.02 2 1.9 - - 1.9 - 1.9 - V Voltage VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V CMOS Loads -0.02 6 5.9 - - 5.9 - 5.9 - V High Level Output -6 4.5 3.98 - - 3.84 - 3.7 - V Voltage -7.8 6 5.48 - - 5.34 - 5.2 - V TTL Loads Low Level Output VOL VIH or 0.02 2 - - 0.1 - 0.1 - 0.1 V Voltage VIL 0.02 4.5 - - 0.1 - 0.1 - 0.1 V CMOS Loads 0.02 6 - - 0.1 - 0.1 - 0.1 V Low Level Output 6 4.5 - - 0.26 - 0.33 - 0.4 V Voltage 7.8 6 - - 0.26 - 0.33 - 0.4 V TTL Loads Input Leakage II VCC or - 6 - - ±0.1 - ±1 - ±1 µA Current GND 3

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 DC Electrical Specifications (Continued) TEST CONDITIONS 25oC -40oC TO 85oC -55oC TO 125oC PARAMETER SYMBOL VI(V) IO(mA) VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS Quiescent Device ICC VCC or 0 6 - - 8 - 80 - 160 µA Current GND Three-State Leakage IOZ VIL or - 6 - - ±0.5 - ±5 - ±10 µA Current VIH HCT TYPES High Level Input VIH - - 4.5 to 2 - - 2 - 2 - V Voltage 5.5 Low Level Input VIL - - 4.5 to - - 0.8 - 0.8 - 0.8 V Voltage 5.5 High Level Output VOH VIH or -0.02 4.5 4.4 - - 4.4 - 4.4 - V Voltage VIL CMOS Loads High Level Output -6 4.5 3.98 - - 3.84 - 3.7 - V Voltage TTL Loads Low Level Output VOL VIH or 0.02 4.5 - - 0.1 - 0.1 - 0.1 V Voltage VIL CMOS Loads Low Level Output 6 4.5 - - 0.26 - 0.33 - 0.4 V Voltage TTL Loads Input Leakage II VCC to 0 5.5 - - ±0.1 - ±1 - ±1 µA Current GND Quiescent Device ICC VCC or 0 5.5 - - 8 - 80 - 160 µA Current GND Additional Quiescent ∆ICC VCC - 4.5 to - 100 360 - 450 - 490 µA Device Current Per (Note 2) -2.1 5.5 Input Pin: 1 Unit Load Three-State Leakage IOZ VIL or - 5.5 - - ±0.5 - ±5 - ±10 µA Current VIH NOTE: 2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS nA, nOE 1 NOTE: Unit Load is∆ICClimit specified in DC Electrical Specifications table, e.g., 360µA max at 25oC. 4

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 Switching Specifications Input tr, tf = 6ns 25oC -40oC TO 85oC -55oCTO125oC TEST PARAMETER SYMBOL CONDITIONS VCC (V) TYP MAX MAX MAX UNITS HC TYPES Propagation Delay Data tPLH, tPHL CL= 50pF 2 - 100 125 150 ns to Outputs 4.5 - 20 25 30 ns CL= 15pF 5 8 - - - ns CL = 50pF 6 - 17 21 36 ns Enable Delay Time tPZL,tPZH CL= 50pF 2 - 125 155 190 ns 4.5 - 25 31 38 ns CL= 15pF 5 10 - - - ns CL = 50pF 6 - 21 26 32 ns DisablingDelayTime tPLZ, tPHZ CL = 50pF 2 - 125 155 190 ns CL= 50pF 4.5 - 25 31 38 ns CL= 15pF 5 10 - - - ns CL = 50pF 6 - 21 26 32 ns Output Transition Times tTLH, tTHL CL= 50pF 2 - 60 75 90 ns 4.5 - 12 15 18 ns 6 - 10 13 15 ns Input Capacitance CI - - - 10 10 10 pF Three-State Output CO - - - 20 20 20 pF Capacitance Power Dissipation CPD - 5 30 - - - pF Capacitance (Notes 3, 4) HCT TYPES Propagation Delay Time tPLH, tPHL CL= 50pF 4.5 - 24 30 36 ns to Outputs CL= 15pF 5 9 - - - ns Output Enable Time tPZL,tPZH CL= 50pF 4.5 - 25 31 38 ns CL= 15pF 5 10 - - - ns Output Disabling Time tPLZ, tPHZ CL= 50pF 4.5 - 28 35 42 ns CL= 15pF 5 11 - - - ns Output Transition Times tTLH, tTHL CL= 50pF 4.5 - 12 15 18 ns Input Capacitance CI - - - 10 10 10 pF Three-State Output CO - - - 20 20 20 pF Capacitance Power Dissipation CPD - 5 36 - - - pF Capacitance (Notes 3, 4) NOTES: 3. CPD is used to determine the dynamic power consumption, per multiplexer. 4. PD = VCC2 fi(CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage. 5

CD54HC126, CD74HC126, CD54HCT126, CD74HCT126 Test Circuits and Waveforms tr = 6ns tf = 6ns tr = 6ns tf = 6ns 90% VCC 2.7V 3V INPUT 50% INPUT 1.3V 10% GND 0.3V GND tTHL tTLH tTHL tTLH 90% 90% 50% 1.3V INVERTING INVERTING 10% 10% OUTPUT OUTPUT tPHL tPLH tPHL tPLH FIGURE6. HCTRANSITIONTIMESANDPROPAGATION FIGURE7. HCTTRANSITIONTIMESANDPROPAGATION DELAY TIMES, COMBINATION LOGIC DELAY TIMES, COMBINATION LOGIC 6ns 6ns tr 6ns tf 6ns OUTPUT 90% VCC OUTPUT 2.7 3V DISABLE 50% DISABLE 1.3 10% 0.3 GND GND tPLZ tPZL tPLZ tPZL OUTPUT LOW OUTPUT LOW TO OFF 50% TO OFF 1.3V 10% 10% tPHZ 90% tPZH tPHZ 90% tPZH OUTPUT HIGH OUTPUT HIGH 50% TO OFF TO OFF 1.3V OUTPUTS OUTPUTS OUTPUTS OUTPUTS OUTPUTS OUTPUTS ENABLED DISABLED ENABLED ENABLED DISABLED ENABLED FIGURE8. HCTHREE-STATEPROPAGATIONDELAY FIGURE9. HCTTHREE-STATEPROPAGATIONDELAY WAVEFORM WAVEFORM OTHER OUTPUT INPUTS IC WITH RL = 1kΩ TIED HIGH THREE- VCC FOR tPLZ AND tPZL OR LOW STATE CL GND FOR tPHZ AND tPZH OUTPUT 50pF OUTPUT DISABLE NOTE: OpendrainwaveformstPLZandtPZLarethesameasthoseforthree-stateshownontheleft.ThetestcircuitisOutputRL=1kΩto VCC, CL = 50pF. FIGURE 10. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 6

PACKAGE OPTION ADDENDUM www.ti.com 28-Jul-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) Ball material (3) (4/5) (6) 5962-9065101MCA ACTIVE CDIP J 14 1 TBD SNPB N / A for Pkg Type -55 to 125 5962-9065101MC A CD54HCT126F3A CD54HC126F3A ACTIVE CDIP J 14 1 TBD SNPB N / A for Pkg Type -55 to 125 5962-8684801CA CD54HC126F3A CD54HCT126F3A ACTIVE CDIP J 14 1 TBD SNPB N / A for Pkg Type -55 to 125 5962-9065101MC A CD54HCT126F3A CD74HC126E ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type -55 to 125 CD74HC126E & no Sb/Br) CD74HC126M ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC126M & no Sb/Br) CD74HC126M96 ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC126M & no Sb/Br) CD74HC126MT ACTIVE SOIC D 14 250 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HC126M & no Sb/Br) CD74HCT126E ACTIVE PDIP N 14 25 Green (RoHS NIPDAU N / A for Pkg Type -55 to 125 CD74HCT126E & no Sb/Br) CD74HCT126M ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT126M & no Sb/Br) CD74HCT126M96 ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT126M & no Sb/Br) CD74HCT126M96E4 ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT126M & no Sb/Br) CD74HCT126M96G4 ACTIVE SOIC D 14 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT126M & no Sb/Br) CD74HCT126MG4 ACTIVE SOIC D 14 50 Green (RoHS NIPDAU Level-1-260C-UNLIM -55 to 125 HCT126M & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 28-Jul-2020 (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF CD54HC126, CD54HCT126, CD74HC126, CD74HCT126 : •Catalog: CD74HC126, CD74HCT126 •Military: CD54HC126, CD54HCT126 NOTE: Qualified Version Definitions: •Catalog - TI's standard catalog product •Military - QML certified for Military and Defense Applications Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 8-Nov-2018 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CD74HC126M96 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 CD74HC126MT SOIC D 14 250 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 CD74HCT126M96 SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 8-Nov-2018 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CD74HC126M96 SOIC D 14 2500 367.0 367.0 38.0 CD74HC126MT SOIC D 14 250 210.0 185.0 35.0 CD74HCT126M96 SOIC D 14 2500 367.0 367.0 38.0 PackMaterials-Page2

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PACKAGE OUTLINE J0014A CDIP - 5.08 mm max height SCALE 0.900 CERAMIC DUAL IN LINE PACKAGE PIN 1 ID A 4X .005 MIN (OPTIONAL) [0.13] .015-.060 TYP [0.38-1.52] 1 14 12X .100 [2.54] 14X .014-.026 14X .045-.065 [0.36-0.66] [1.15-1.65] .010 [0.25] C A B .754-.785 [19.15-19.94] 7 8 B .245-.283 .2 MAX TYP .13 MIN TYP [6.22-7.19] [5.08] [3.3] SEATING PLANE C .308-.314 [7.83-7.97] AT GAGE PLANE .015 GAGE PLANE [0.38] 0 -15 14X .008-.014 TYP [0.2-0.36] 4214771/A 05/2017 NOTES: 1. All controlling linear dimensions are in inches. Dimensions in brackets are in millimeters. Any dimension in brackets or parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This package is hermitically sealed with a ceramic lid using glass frit. 4. Index point is provided on cap for terminal identification only and on press ceramic glass frit seal only. 5. Falls within MIL-STD-1835 and GDIP1-T14. www.ti.com

EXAMPLE BOARD LAYOUT J0014A CDIP - 5.08 mm max height CERAMIC DUAL IN LINE PACKAGE (.300 ) TYP [7.62] SEE DETAIL B SEE DETAIL A 1 14 12X (.100 ) [2.54] SYMM 14X ( .039) [1] 7 8 SYMM LAND PATTERN EXAMPLE NON-SOLDER MASK DEFINED SCALE: 5X .002 MAX (.063) [0.05] [1.6] METAL ALL AROUND ( .063) SOLDER MASK [1.6] OPENING METAL .002 MAX SOLDER MASK (R.002 ) TYP [0.05] OPENING [0.05] ALL AROUND DETAIL A DETAIL B SCALE: 15X 13X, SCALE: 15X 4214771/A 05/2017 www.ti.com

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