CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 2.4-GHz RF Front End, 14-dBm output power FEATURES APPLICATIONS 1 • SeamlessInterfaceto2.4-GHzLowPowerRF • All2.4-GHzISMBandSystems DevicesfromTexasInstruments • WirelessSensorNetworks • Upto+14-dBm(25mW)OutputPower • WirelessIndustrialSystems • 6-dBTypicalImprovedSensitivityonCC24xx • IEEE802.15.4andZigBeeSystems andCC2500,CC2510,andCC2511 • WirelessConsumerSystems • FewExternalComponents • WirelessAudioSystems – IntegratedSwitches DESCRIPTION – IntegratedMatchingNetwork CC2590 is a cost-effective and high performance RF – IntegratedBalun Front End for low-power and low-voltage 2.4-GHz – IntegratedInductors wirelessapplications. – IntegratedPA CC2590 is a range extender for all existing and future – IntegratedLNA 2.4-GHz low-power RF transceivers, transmitters and • DigitalControlofLNAGainbyHGMPin System-on-ChipproductsfromTexasInstruments. • 100-nAinPowerDown(EN=PAEN=0) CC2590 increases the link budget by providing a • LowTransmitCurrentConsumption power amplifier for increased output power, and an LNA with low noise figure for improved receiver – 22-mAat3-Vfor+12-dBm,PAE=23% sensitivity. • LowReceiveCurrentConsumption CC2590 provides a small size, high output power RF – 3.4-mAforHighGainMode designwithits4x4-mmQFN-16package. – 1.8-mAforLowGainMode CC2590 contains PA, LNA, switches, RF-matching, • 4.6-dBLNANoiseFigure,includingT/RSwitch and balun for simple design of high performance andexternalantennamatch wirelessapplications. • RoHSCompliant4×4-mmQFN-16Package • 2.0-Vto3.6-VOperation CC2590 BLOCK DIAGRAM PA BALUN 4 RF_P 11 ANT 3 RXTX LNA 2 RF_N Logic 5 PAEN Bias 6 EN 15 7 BIAS HGM 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2008,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CC2590 SWRS080–SEPTEMBER2008........................................................................................................................................................................................ www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ABSOLUTE MAXIMUM RATINGS Undernocircumstancesmusttheabsolutemaximumratingsbeviolated.Stressexceedingoneormoreofthelimitingvalues maycausepermanentdamagetothedevice. PARAMETER VALUE UNIT Supplyvoltage Allsupplypinsmusthavethesamevoltage –0.3to3.6 V Voltageonanydigitalpin –0.3toV +0.3,max3.6 V DD InputRFlevel +10 dBm Storagetemperaturerange –50to150 °C Reflowsolderingtemperature AccordingtoIPC/JEDECJ-STD-020 260 °C HumanBodyModel,allpinsexceptpin10 2000 V ESD HumanBodyModel,pin10 1900 V ChargedDeviceModel 1000 V RECOMMENDED OPERATING CONDITIONS TheoperatingconditionsforCC2590arelistedbelow. PARAMETER MIN MAX UNIT Ambienttemperaturerange –40 85 °C Operatingsupplyvoltage 2.0 3.6 V Operatingfrequencyrange 2400 2483.5 MHz ELECTRICAL CHARACTERISTICS T =25°C,V =3.0V,f =2440MHz(unlessotherwisenoted).MeasuredonCC2590EMreferencedesignincluding C DD RF externalmatchingcomponents. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT Receivecurrent,HighGainMode HGM=1 3.4 4.0 mA Receivecurrent,LowGainMode HGM=0 1.8 2.0 mA P =0.5dBm,P =12.2dBm 22.1 mA IN OUT Transmitcurrent P =–3.5dBm,P =10.0dBm 16.8 mA IN OUT Transmitcurrent Noinputsignal 8.0 10.0 mA Powerdowncurrent EN=PAEN=0 0.1 0.3 m A Highinputlevel(controlpins) EN,PAEN,HGM,RXTX 1.3 V V DD Lowinputlevel(controlpins) EN,PAEN,HGM,RXTX 0.3 V Powerdown-Receivemodeswitching 1.4 m s time Powerdown-Transmitmodeswitching 0.8 m s time RFReceive Gain,HighGainMode HGM=1 11.4 dB Gain,LowGainMode HGM=0 0 dB Gainvariation,2400–2483.5MHz,High HGM=1 1.2 dB GainMode Gainvariation,2.0V–3.6V,HighGain HGM=1 1.7 dB Mode HGM=1,includinginternalT/Rswitchandexternal Noisefigure,HighGainMode 4.6 dB antennamatch Input1dBcompression,HighGainMode HGM=1 –21 dBm 2 SubmitDocumentationFeedback Copyright©2008,TexasInstrumentsIncorporated ProductFolderLink(s):CC2590

CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 ELECTRICAL CHARACTERISTICS (continued) T =25°C,V =3.0V,f =2440MHz(unlessotherwisenoted).MeasuredonCC2590EMreferencedesignincluding C DD RF externalmatchingcomponents. PARAMETER TESTCONDITIONS MIN TYP MAX UNIT InputIP3,HighGainMode HGM=1 –9 dBm Inputreflectioncoefficient,S11 HGM=1,measuredatantennaport –19 dB RFTransmit Gain 14.1 dB P =4.5dBm 13.8 dBm IN Outputpower,P P =0.5dBm 12.2 dBm OUT IN P =-3.5dBm 10.0 dBm IN PowerAddedEfficiency,PAE P =0.5dBm 23.5 % IN Output1dBcompression 10.4 dBm OutputIP3 23 dBm Outputpowervariationoverfrequency 2400–2483.5MHz,P =0.5dBm 0.3 dB IN Outputpowervariationoverpowersupply 2.0V–3.6V,P =0.5dBm 3.2 dB IN Outputpowervariationovertemperature -40°C–85°C,P =0.5dBm 1.1 dB IN The2ndharmoniccanbereducedtobelowregulatory 2ndharmonicpower limitsbyusinganexternalLCfilterandantenna.See –14 dBm applicationnoteAN032forregulatoryrequirements. The3rdharmoniccanbereducedtobelowregulatory 3rdharmonicpower limitsbyusinganexternalLCfilterandantenna.See –28 dBm applicationnoteAN032forregulatoryrequirements. Copyright©2008,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):CC2590

CC2590 SWRS080–SEPTEMBER2008........................................................................................................................................................................................ www.ti.com DEVICE INFORMATION TheCC2590pinoutanddescriptionareshowninFigure1andTable1,respectively. PINANDI/OCONFIGURATION (TOPVIEW) S A A N I B L S _ _ D A D D BI D D V A N V A P G A 16 15 14 13 NC 1 12 GND RF_N 2 11 ANT QFN-16 4x4mm RXTX 3 10 AVDD_PA2 RF_P 4 9 GND 5 6 7 8 N N M D E E G N A H G P Figure1. NOTE: The exposed die attach pad must be connected to a solid ground plane as this is the primary ground connection for the chip. Inductance in vias to the pad should be minimized. It is highly recommended to follow the reference layout. Changes will alter theperformance.AlsoseethePCBlandpatterninformationinthisdatasheet. For best performance, minimize the length of the ground vias, by using a 4-layer PCB withgroundplaneaslayer2whenCC2590ismountedontolayer1. 4 SubmitDocumentationFeedback Copyright©2008,TexasInstrumentsIncorporated ProductFolderLink(s):CC2590

CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 Table1. PINFUNCTIONS PIN TYPE DESCRIPTION NO. NAME Theexposeddieattachpadmustbeconnectedtoasolidgroundplane.See — GND Ground CC2590EMreferencedesignforrecommendedlayout. 1 NC NotConnected 2 RF_N RF RFinterfacetowardsCC24xxorCC25xxdevice. RXTXswitchingvoltagewhenconnectedtoCC24xxdevices.SeeTable3,Table4, 3 RXTX Analog/Control andTable5fordetails. 4 RF_P RF RFinterfacetowardsCC24xxorCC25xxdevice 5 PAEN DigitalInput Digitalcontrolpin.SeeTable3,Table4,andTable5fordetails. 6 EN DigitalInput Digitalcontrolpin.SeeTable3,Table4,andTable5fordetails. Digitalcontrolpin. 7 HGM DigitalInput HGM=1→DeviceinHighGainMode HGM=0→DeviceinLowGainMode(RXonly) Secondarygroundconnections.Shouldbeshortedtothedieattachpadonthetop 8,9,12,14 GND Ground PCBlayer. 2.0-V–3.6-VPower.PCBtracetothispinservesasinductiveloadtoPA.See 10 AVDD_PA2 Power CC2590EMreferencedesignforrecommendedlayout. 11 ANT RF Antennainterface. 2.0-V–3.6-VPower.PCBtracetothispinservesasinductiveloadtoLNA.See 13 AVDD_LNA Power CC2590EMreferencedesignforrecommendedlayout. 15 BIAS Analog Biasinginput.ResistorbetweenthisnodeandgroundsetsbiascurrenttoPAs. 16 AVDD_BIAS Power 2.0-V–3.6-VPower. Copyright©2008,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):CC2590

CC2590 SWRS080–SEPTEMBER2008........................................................................................................................................................................................ www.ti.com CC2590EM Evaluation Module VDD C101/C102 =PCB trace inductor VDD VDD C161 C131/C132 TL101 TL131 AVDD_BIAS AVDD_PA2 AVDD_LNARRFFc__PP LDB182G4520C-110 SMA RRXRXXTTTXXX Balun C2 SMA C112 L111 CC2590 RRFRFF___NNN ANT C111 PAEN PAEN EN EN S HGM HGM A BI RXTX R151 Figure2.CC2590EMEvaluationModule Table2.ListofMaterials(SeeCC2590EMReferenceDesign) DEVICE FUNCTION VALUE L112 Partofantennamatch. 1.5nH:LQW15AN1N5B00fromMurata C111 Partofantennamatch. 0.5pF,GRM1555C1HR50BZ01fromMurata C112 DCblock. 47pF,GRM1555C1H470JZ01fromMurata C161 Decouplingcapacitor. 1nF:GRM1555C1H102JA01fromMurata 27pF||1nF.ThesmallestcapclosesttoCC2590. Decoupling.WillaffectPAresonance.SeeCC2590EMreference C101/C102 27pF:GRM1555C1H270JZ01fromMurata designforplacement. 1nF:GRM1555C1H102JA01fromMurata 18pF||1nF.ThesmallestcapclosesttoCC2590. Decoupling.WillaffectLNAresonance.SeeCC2590EMreference C131/C132 18pF:GRM1555C1H180JZ01fromMurata designforplacement. 1nF:GRM1555C1H102JA01fromMurata C2 Decouplingofexternalbalun 1nF:LWQ15AN1N5B00fromMurata TL101(1) Transmissionline.WillaffectPAresonance.(simulatedinductance: SeeCC2590EMreferencedesign. 0.87nH) Transmissionline:Length» 40mil,Width=8mil TL131 Transmissionline.WillaffectLNAresonance.(simulatedinductance: SeeCC2590EMreferencedesign. 1.64nH) Transmissionline:Length» 100mil,Width=8mil R151 Biasresistor 4.3kΩ:RK73H1ETTP4301FfromKoa (1) TransmissionlinesaremeasuredfromedgeofpadoftheCC2590footprinttoedgeofpadofDCcouplingcapacitor.Thelengthofthe transmissionlinesdependonthedistancetothegroundplane.IfanotherPCBstackupischosenthelengthofthetransmissionlines needstobeadjusted. PCBdescription:4layerPCB1.6mm Copper1:35m m Dielectric1-2:0.35mm(e.g.2xPrepreg7628AT0547%Resin) Copper2:18m m Dielectric2-3:0.76mm(4x7628M43%Resin) Copper3:18m m Dielectric3-4:0.35mm(e.g.2xPrepreg7628AT0547%Resin) Copper4:35m m DE104iMLorequivalentsubstrate(Resincontentsaround45%,whichgivesEr=4.42at2.4GHz,TanD=0.016) 6 SubmitDocumentationFeedback Copyright©2008,TexasInstrumentsIncorporated ProductFolderLink(s):CC2590

CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 TYPICAL CHARACTERISTICS LNAGAINANDNOISEFIGURE LNAGAIN vs vs FREQUENCY TEMPERATURE 13 5.4 14 12 Gain HGM 5.3 13 HGM 11 5.2 12 11 10 5.1 10 9 5 9 B B 8 4.9 d 8 −d 7 4.8 re− dB 7 Gain 56 Noise Figure HGM 44..67 e Figu Gain− 56 s 4 4 4.5 oi N 3 3 4.4 2 2 4.3 1 LGM 1 4.2 Gain LGM 0 0 4.1 -1 -1 4 -2 -2 3.9 -3 2400 2410 2420 2430 2440 2450 2460 2470 2480 -40 -20 0 20 40 60 80 f−Frequency−MHz T−Temperature−oC Figure3. Figure4. LNAGAIN vs POWERSUPPLY 13 12 m1 11 freq=2.440GHz 10 HGM Sim(1p,e1d)=an0c.1e2 =9 6/ 1-3.712.237 -9 j8.383 9 8 7 B d 6 − n 5 ai G 4 3 S(1,1) m1 2 1 0 LGM -1 -2 -3 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 Power Supply−V freq (2.400GHz to 2.485GHz) Figure5. Figure6.InputImpedanceofLNAMeasuredfromAntenna PortonCC2590EM Copyright©2008,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):CC2590

CC2590 SWRS080–SEPTEMBER2008........................................................................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) OUTPUTPOWER,PAEAND OUTPUTPOWER,PAEAND CURRENTCONSUMPTION CURRENTCONSUMPTION vs vs INPUTPOWER FREQUENCY 28 40 25 25 26 38 24 24.5 PAE 24 36 23 24 22 34 PAE % 20 32 A % 22 23.5 − 18 30 m− E− 21 23 mA ut Power (dBm) and PAE 1111446680022 PoIu_tVDD 111122222246802468 Current Consumption put Power (dBm) and PA 11111214678905 I_VDD 12222229001122....5555 Current Consumption− utp -2 10 Out 13 Pout 19 O -4 8 12 18.5 -6 6 -8 4 11 18 -20 -18 -16-14 -12 -10 -8 -6 -4 -2 0 2 4 6 2400 2410 2420 2430 2440 2450 2460 2470 2480 f−Frequency−MHz Input Power−dBm Figure7. Figure8. OUTPUTPOWER,PAEAND OUTPUTPOWER,PAEAND CURRENTCONSUMPTION CURRENTCONSUMPTION vs vs TEMPERATURE POWERSUPPLY 28 23 26 26 PAE 26 22.8 24 25 PAE % 24 22.6 % 22 24 − A − A E 22 22.4m E m m) and PA 1280 I_VDD 2222.2umption− m) and PA 1280 I_VDD 2232 umption− B s B s utput Power (d 111462 Pout 222111...468Current Con utput Power (d 111642 POUT 122901 Current Con O O 10 21.2 10 18 8 21 8 17 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 T−Temperature−oC Power Supply−V Figure9. Figure10. 8 SubmitDocumentationFeedback Copyright©2008,TexasInstrumentsIncorporated ProductFolderLink(s):CC2590

CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 Controlling the Output Power from CC2590 The output power of CC2590 is controlled by controlling the input power. The CC2590 PA is designed to work in compression(classAB),andthebestefficiencyisreachedwhenastronginputsignalisapplied. Input Levels on Control Pins The four digital control pins (PAEN, EN, HGM, RXTX) have built-in level-shifting functionality, meaning that if the CC2590 is operating from a 3.6-V supply voltage, the control pins will still sense 1.6-V - 1.8-V signals as logical ‘1’. An example of the above would be that RXTX is connected directly to the RXTX pin on CC24xx, but the global supply voltage is 3.6-V. The RXTX pin on CC24xx will switch between 0-V (RX) and 1.8-V(TX), which is still a highenoughvoltagetocontrolthemodeofCC2590. Theinputvoltagesshouldhowevernothavelogical‘1’levelthatishigherthanthesupply. Connecting CC2590 to a CC24xx Device Table3.ControlLogicforConnectingCC2590toaCC24xxDevice PAEN=EN RXTX HGM MODEOFOPERATION 0 X X PowerDown 1 0 0 RXLowGainMode 1 0 1 RXHighGainMode 1 1 X TX VDD C101/C102 =PCB trace inductor VDD VDD C161 C131/C132 1 1 0 3 1 1 L L T T CC24xx S 2 A A A N AVDD_BI AVDD_P AVDD_LRFRRFF___PPP L21 RF_P RXRRXXTTTXXX TXRX_SWITCH C112 L111 CC2590 RRFRFF___NNN RF_N ANT L112 C113 C111 PAEN RREG_OUT(CC243x, CC2480), VREGOUT(CC2420), GIO1 (CC2400) EN AS HGM P1_1 (CC243x), GPIO1 (CC2480), BI GIO6 (CC2400) Alternativelyto R151 VDD/GND/MCU Alternatively (CC2420) from MCU Figure11.CC2590+CC24xxApplicationCircuit Copyright©2008,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLink(s):CC2590

CC2590 SWRS080–SEPTEMBER2008........................................................................................................................................................................................ www.ti.com Connecting CC2590 to the CC2500, CC2510, or CC2511 Device Table4.ControlLogicforConnectingCC2590toaCC2500/10/11Devices PAEN EN RXTX HGM MODEOFOPERATION 0 0 NC X PowerDown 0 1 NC 0 RXLowGainMode 0 1 NC 1 RXHighGainMode 1 0 NC X TX 1 1 NC X Notallowed VDD C101/C102 =PCB trace inductor VDD VDD C161 C131/C132 1 1 0 3 1 1 L L T T CC2500 CC2510 S 2 A AVDD_BIA AVDD_PA AVDD_LNRRFRFF___PPP RF_P CC2511 RRXRXXTTTXXX NC C112 L111 ANT CC2590 RRFRFF___NNN RF_N L112 C113 C111 PAEN GDO0 EN GDO2 S A HGM BI R151 Connected to Alternatively VDD/GND/MCU from MCU Figure12.CC2590+CC2500/10/11DeviceApplicationCircuit 10 SubmitDocumentationFeedback Copyright©2008,TexasInstrumentsIncorporated ProductFolderLink(s):CC2590

CC2590 www.ti.com........................................................................................................................................................................................ SWRS080–SEPTEMBER2008 Connecting CC2590 to a CC2520 Device Table5.ControlLogicforConnectingCC2590toaCC2520Device PAEN EN RXTX HGM MODEOFOPERATION 0 0 NC X PowerDown 0 1 NC 0 RXLowGainMode 0 1 NC 1 RXHighGainMode 1 0 NC X TX 1 1 NC X Notallowed VDD C101/C102 =PCB trace inductor VDD VDD C161 C131/C132 1 1 0 3 1 1 TL TL CC2520 S 2 A A A N AVDD_BI AVDD_P AVDD_LRRRFFF___PPP RF_P RRXRXXTTTXXX NC C1 C112 L111 ANT CC2590 RRFRFF___NNN RF_N L112 C113 C111 PAEN GPIO5 EN GPIO4 S A HGM GPIO3 BI R151 Alternatively to Alternatively VDD/GND/MCU from MCU Figure13.CC2590+CC2520ApplicationCircuit PCB Layout Guidelines The exposed die attach pad must be connected to a solid ground plane as this is the primary ground connection for the chip. Inductance in vias to the pad should be minimized. It is highly recommended to follow the reference layout. Changes will alter the performance. Also see the PCB landpattern information in this data sheet. For best performance, minimize the length of the ground vias, by using a 4-layer PCB with ground plane as layer 2 when CC2590ismountedontolayer1. PCB trace inductors are used to be able to optimize the inductance value, and they are too small to be replaced by discrete inductors. The placement of the power supply decoupling capacitors C101/C102 and C131/C132 are importanttosetthePCBtraceinductancevaluesaccurately. Copyright©2008,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLink(s):CC2590

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CC2590RGVR ACTIVE VQFN RGV 16 2500 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to 85 CC2590 & no Sb/Br) CC2590RGVRG4 ACTIVE VQFN RGV 16 2500 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to 85 CC2590 & no Sb/Br) CC2590RGVT ACTIVE VQFN RGV 16 250 Green (RoHS Call TI | NIPDAU Level-2-260C-1 YEAR -40 to 85 CC2590 & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 12-Feb-2019 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CC2590RGVR VQFN RGV 16 2500 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 CC2590RGVT VQFN RGV 16 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 12-Feb-2019 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CC2590RGVR VQFN RGV 16 2500 350.0 350.0 43.0 CC2590RGVT VQFN RGV 16 250 210.0 185.0 35.0 PackMaterials-Page2

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