BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series Zener Voltage Regulators www.onsemi.com 250 mW SOT−23 Surface Mount SOT−23 This series of Zener diodes is offered in the convenient, surface CASE 318 mount plastic SOT−23 package. These devices are designed to provide STYLE 8 voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, 3 1 and high density PC boards. Cathode Anode Features MARKING DIAGRAM • 250 mW Rating on FR−4 or FR−5 Board • Zener Breakdown Voltage Range − 2.4 V to 75 V • XXXM(cid:2) Package Designed for Optimal Automated Board Assembly (cid:2) • Small Package Size for High Density Applications 1 • ESD Rating of Class 3 (> 16 kV) per Human Body Model XXX = Device Code • Tight Tolerance Series Available (See Page 4) M = Date Code* • (cid:2) = Pb−Free Package SZ Prefix for Automotive and Other Applications Requiring Unique (Note: Microdot may be in either location) Site and Control Change Requirements; AEC−Q101 Qualified and *Date Code orientation may vary depending up- PPAP Capable on manufacturing location. • These Devices are Pb−Free and are RoHS Compliant ORDERING INFORMATION Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case Device Package Shipping† FINISH: Corrosion resistant finish, easily Solderable BZX84CxxxLT1G SOT−23 3,000 / MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: (Pb−Free) Tape & Reel 260°C for 10 Seconds SZBZX84CxxxLT1G SOT−23 3,000 / POLARITY: Cathode indicated by polarity band (Pb−Free) Tape & Reel FLAMMABILITY RATING: UL 94 V−0 BZX84CxxxLT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SZBZX84CxxxLT3G SOT−23 10,000 / (Pb−Free) Tape & Reel BZX84BxxxLT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SZBZX84BxxxLT1G SOT−23 3,000 / (Pb−Free) Tape & Reel BZX84BxxxLT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SZBZX84BxxxLT3G SOT−23 10,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please See specific marking information in the device marking download the ON Semiconductor Soldering and Mounting Techniques column of the Electrical Characteristics table on page 3 of Reference Manual, SOLDERRM/D. this data sheet. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 − Rev. 22 BZX84C2V4LT1/D

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series MAXIMUM RATINGS Rating Symbol Max Unit Total Power Dissipation on FR−5 Board, PD (Note 1) @ TA = 25°C 250 mW Derated above 25°C 2.0 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:2)JA 500 °C/W Total Power Dissipation on Alumina PD Substrate, (Note 2) @ TA = 25°C 300 mW Derated above 25°C 2.4 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C I unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) IF Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZ VR V IR Reverse Leakage Current @ VR IIRZTVF VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (cid:3)VZ Maximum Temperature Coefficient of VZ C Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator www.onsemi.com 2

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) VZ2 (V) VZ3 (V) Max Reverse (cid:3)VZ @IZT1=5mA @IZT2=1mA @IZT3=20mA Leakage (mV/k) (Note 3) ZZT1 (Note 3) ZZT2 (Note 3) ZZT3 Current @ IZT1 = 5 mA ((cid:2)) ((cid:2)) ((cid:2)) C (pF) Device* MDaervkiicneg Min Nom Max @5 I ZmTA1 = Min Max @1 I ZmTA2 = Min Max @2 0IZ mT3A = (cid:4)IRA @ VVolRts Min Max f@ = V1R M =H 0z BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450 BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450 BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450 BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450 BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450 BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450 BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450 BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260 BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 VZ2 Below Max Reverse (cid:3)VZ VZ1 Below @IZT2=0.1m- VZ3 Below Leakage (mV/k) Below @IZT1=2mA ZZT1 A ZZT2 @IZT3=10mA ZZT3 Current @ IZT1 = 2 mA Below Below Below C (pF) Device* MDaervkiicneg Min Nom Max @2 I ZmTA1 = Min Max @0. 5IZ mT4A = Min Max @1 0IZ mT3A = (cid:4)IRA @ (VVR) Min Max f@ = V1R M =H 0z BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ-prefix devices where applicable. www.onsemi.com 3

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Max Reverse Leakage ZZT ((cid:2)) @ Current (cid:3)VZ VZ (Volts) @ IZT = 5 mA IZT = 5 mA (mV/k) (Note 4) (Note 4) IR VR @ IZT = 5 mA C (pF) Device @ @ VR =0, Device Marking Min Nom Max Max (cid:4)A Volts Min Max f = 1 MHz BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 5 1 −3.5 0 450 BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260 BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225 BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200 BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 BZX84B9V1LT1G, T3G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 BZX84B10LT1G T2E 9.8 10 10.2 20 0.2 7 4.5 8 130 BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130 BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110 BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Max Reverse Leakage ZZT ((cid:2)) @ Current (cid:3)VZ VZ (Volts) @ IZT = 2 mA IZT = 2 mA (mV/k) (Note 4) (Note 4) IR VR @ IZT = 2 mA C (pF) Device @ @ VR =0, Device* Marking Min Nom Max Max (cid:4)A Volts Min Max f = 1 MHz BZX84B27LT1G T27 26.5 27 27.5 80 0.05 18.9 21.4 25.3 70 *Includes SZ-prefix devices where applicable. www.onsemi.com 4

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series TYPICAL CHARACTERISTICS 8 100 C) °V/ 7 TYPICAL TC VALUES °C) TYPICAL TC VALUES ENT (m 56 NT (mV/ CI E OEFFI 34 VZ @ IZT EFFICI VZ @ IZT E C CO 10 R 2 E U R RAT 1 ATU MPE 0 PER E -1 M , TVZ-(cid:2)2 , TEZ θ V -(cid:2)3 θ 1 2 3 4 5 6 7 8 9 10 11 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C) (Temperature Range −55°C to +150°C) 1000 1000 TJ = 25°C 75 V (MMBZ5267BLT1) ΩNCE ()100 IZ = 1 mA fIZ =(A 1C )k =H z0.1 IZ(DC) NT (mA)100 91 V (MMBZ5270BLT1) MPEDA 5 mA CURRE C I D MI 20 mA AR A W DYN 10 OR 10 , ZT , FF Z I 150°C 75°C 25°C 0°C 1 1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Figure 4. Typical Forward Voltage Zener Impedance www.onsemi.com 5

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series TYPICAL CHARACTERISTICS 1000 1000 0 V BIAS TA = 25°C μA) 100 1 V BIAS T ( N 10 F) RE CE (p100 CUR 1 AN GE +150°C PACIT B50IA%S OAFT VZ NOM EAKA 0.1 A L 0.01 C, C 10 I, R0.001 +(cid:2)25°C -(cid:2)55°C 0.0001 1 0.00001 1 10 100 0 10 20 30 40 50 60 70 80 90 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 100 100 TA = 25°C TA = 25°C mA) 10 mA) 10 T ( T ( N N E E R R R R U 1 U 1 C C R R E E N N E E Z Z , Z 0.1 , Z0.1 I I 0.01 0.01 0 2 4 6 8 10 12 10 30 50 70 90 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 7. Zener Voltage versus Zener Current Figure 8. Zener Voltage versus Zener Current (V Up to 12 V) (12 V to 91 V) Z www.onsemi.com 6

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 8: END VIEW PIN 1. ANODE 2. NO CONNECTION 3. CATHODE RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BZX84C2V4LT1/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BZX84C16LT1G BZX84C20LT1G BZX84C24LT1G BZX84C2V7LT1G BZX84C3V0LT1G BZX84C47LT1G BZX84C62LT1G BZX84C6V8LT1G BZX84C75LT1G SZBZX84C2V7LT1G SZBZX84C16LT1G SZBZX84C15LT1G SZBZX84C47LT1G SZBZX84C13LT1G SZBZX84C6V8LT1G SZBZX84C39LT1G SZBZX84C5V6LT1G SZBZX84C24LT1G SZBZX84C33LT1G SZBZX84C62LT1G SZBZX84C9V1LT1G SZBZX84C8V2LT1G SZBZX84C20LT1G SZBZX84C75LT1G SZBZX84C3V0LT1G SZBZX84C47LT3G SZBZX84C6V8LT3G SZBZX84C16LT3G SZBZX84C13LT3G