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ICGOO电子元器件商城为您提供BZX84C5V6LT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BZX84C5V6LT1G价格参考。ON SemiconductorBZX84C5V6LT1G封装/规格:二极管 - 齐纳 - 单, Zener Diode 5.6V 225mW ±7% Surface Mount SOT-23-3 (TO-236)。您可以下载BZX84C5V6LT1G参考资料、Datasheet数据手册功能说明书,资料中有BZX84C5V6LT1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ZENER 5.6V 225MW SOT23-3稳压二极管 5.6V 225mW |
产品分类 | 单二极管/齐纳分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,ON Semiconductor BZX84C5V6LT1G- |
数据手册 | |
产品型号 | BZX84C5V6LT1G |
PCN设计/规格 | |
不同If时的电压-正向(Vf) | 900mV @ 10mA |
不同 Vr时的电流-反向漏电流 | 1µA @ 2V |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SOT-23-3(TO-236) |
其它名称 | BZX84C5V6LT1GOSCT |
功率-最大值 | 225mW |
功率耗散 | 300 mW |
包装 | 剪切带 (CT) |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
容差 | ±7% |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工作温度 | - |
工厂包装数量 | 3000 |
最大反向漏泄电流 | 1 uA |
最大工作温度 | + 150 C |
最大齐纳阻抗 | 40 Ohms |
最小工作温度 | - 65 C |
标准包装 | 1 |
电压-齐纳(标称值)(Vz) | 5.6V |
电压容差 | 7 % |
电压温度系数 | 0.25 mV/K |
系列 | BZX84C5V6L |
配置 | Single |
阻抗(最大值)(Zzt) | 40 欧姆 |
齐纳电压 | 5.6 V |
齐纳电流 | 10 mA |
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series Zener Voltage Regulators 250 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide www.onsemi.com voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features • 250 mW Rating on FR−4 or FR−5 Board • SOT−23 Zener Breakdown Voltage Range − 2.4 V to 75 V CASE 318 • Package Designed for Optimal Automated Board Assembly STYLE 8 • Small Package Size for High Density Applications • ESD Rating of Class 3 (> 16 kV) per Human Body Model 3 1 • Peak Power − 225 W (8 X 20 (cid:2)s) Cathode Anode • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and MARKING DIAGRAM PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics xxx M(cid:2) (cid:2) CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable 1 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds xxx = Device Code POLARITY: Cathode indicated by polarity band M = Date Code* FLAMMABILITY RATING: UL 94 V−0 (cid:2) = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS *Date Code orientation may vary depending up- on manufacturing location. Rating Symbol Max Unit Peak Power Dissipation @ 20 (cid:2)s (Note 1) Ppk 225 W ORDERING INFORMATION @ TL ≤ 25°C Total Power Dissipation on FR−5 Board, PD Device Package Shipping† D(Neoratete 2d) a@b oTvAe =2 52°5C°C 225.00 mmWW/°C BZX84CxxxET1G SOT−23 3,000 / Thermal Resistance, Junction−to−Ambient R(cid:3)JA 500 °C/W (Pb−Free) Tape & Reel SZBZX84CxxxET1G SOT−23 3,000 / Total Power Dissipation on Alumina PD Substrate, (Note 3) @ TA = 25°C 300 mW (Pb−Free) Tape & Reel Derated above 25°C 2.4 mW/°C BZX84CxxxET3G SOT−23 10,000 / Thermal Resistance, Junction−to−Ambient R(cid:3)JA 417 °C/W (Pb−Free) Tape & Reel Junction and Storage Temperature Range TJ, Tstg −65 to °C SZBZX84CxxxET3G SOT−23 10,000 / +150 (Pb−Free) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the †For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specification 1. Nonrepetitive current pulse per Figure 9. Brochure, BRD8011/D. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: October, 2016 − Rev. 10 BZX84C2V4ET1/D
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C I unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) IF Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZ VR V IR Reverse Leakage Current @ VR IIRZTVF VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (cid:4)VZ Maximum Temperature Coefficient of VZ C Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator www.onsemi.com 2
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ2 (V) Max VZ1 (V) @IZT2=1 VZ3 (V) Reverse (cid:3)VZ @I(ZNT1ot=e 54)mA Z(Z(cid:2)T)1 (NmoteA 4) Z(Z(cid:2)T)2 @I(ZNT3o=te2 04 )mA Z(Z(cid:2)T)3 LCeuarkraegnet @ I(ZmT1V=/5k )mA C @(pF) @ IZT1 @ IZT2 @ VR = 0 Device* MDaervkiicneg Min Nom Max 5 m=A Min Max 1 m=A Min Max 2I0Z Tm3=A (cid:4)IRA @ (VVR) Min Max 1 Mf =Hz BZX84C2V4ET1G BA1 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1.0 −3.5 0 450 BZX84C2V7ET1G BA2 2.5 2.7 2.9 100 1.9 2.4 600 3.0 3.6 50 20 1.0 −3.5 0 450 BZX84C3V0ET1G BA3 2.8 3.0 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450 BZX84C3V3ET1G BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450 BZX84C3V6ET1G BA5 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450 BZX84C3V9ET1G BA6 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450 BZX84C4V3ET1G BA7 4.0 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450 BZX84C4V7ET1G BA9 4.4 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260 BZX84C5V1ET1G BB1 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225 BZX84C5V6ET1G BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200 BZX84C6V2ET1G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185 BZX84C6V8ET1G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155 BZX84C7V5ET1G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140 BZX84C8V2ET1G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135 BZX84C9V1ET1G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130 BZX84C10ET1G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130 BZX84C11ET1G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130 BZX84C12ET1G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130 BZX84C13ET1G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120 BZX84C15ET1G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110 BZX84C16ET1G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105 BZX84C18ET1G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100 BZX84C20ET1G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85 BZX84C22ET1G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85 BZX84C24ET1G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80 (cid:3) VZ Max (mV/k) VZ2 Below Reverse Below VZ1 Below ZZT1 @IZT2= ZZT2 VZ3 Below ZZT3 Leakage @ IZT1 = 2 C (pF) @IZT1=2mA Below 0.1 mA Below @IZT3=10mA Below Current mA @ VR @ IZT1 @ IZT4 @ IZT3 = 0 Device* MDaervkiicneg Min Nom Max 2 m=A Min Max 0.5= mA Min Max 10 =mA (cid:4)IRA @ (VVR) Min Max 1 Mf =Hz BZX84C27ET1G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 BZX84C30ET1G BD1 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 BZX84C33ET1G BD2 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 BZX84C36ET1G BD3 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 BZX84C39ET1G BD4 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 BZX84C43ET1G BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 BZX84C47ET1G BD5 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 BZX84C51ET1G BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 BZX84C56ET1G BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 BZX84C62ET1G BD8 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 BZX84C68ET1G BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 BZX84C75ET1G BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C *Include SZ-prefix devices where applicable. www.onsemi.com 3
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series TYPICAL CHARACTERISTICS 8 100 C) °V/ 7 TYPICAL TC VALUES °C) TYPICAL TC VALUES m V/ ENT ( 56 NT (m CI E OEFFI 34 VZ @ IZT EFFICI VZ @ IZT E C CO10 R 2 E U R RAT 1 ATU MPE 0 PER E−1 M , TVZ−2 , TEZ θ V −3 θ 1 2 3 4 5 6 7 8 9 10 11 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C) (Temperature Range −55°C to +150°C) 1000 1000 TJ = 255C 75 V (MMBZ5267BLT1) ΩMPEDANCE ()100 IZ5 = m 1A mA IfZ =(A 1C )k =H z0.1 IZ(DC) CURRENT (mA)100 91 V (MMBZ5270BLT1) C I D MI 20 mA AR A W DYN 10 OR 10 , ZT , FF Z I 150°C 75°C 25°C 0°C 1 1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Figure 4. Typical Forward Voltage Zener Impedance www.onsemi.com 4
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 0 V BIAS TA = 25°C μA) 100 T ( F) 1 V BIAS REN 10 CE (p100 CUR 1 AN GE +150°C CIT BIAS AT KA 0.1 PA 50% OF VZ NOM EA A L0.01 C, C 10 I, R0.001 +25°C 0.0001 −55°C 1 0.00001 1 10 100 0 10 20 30 40 50 60 70 80 90 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 100 100 TA = 25°C TA = 25°C A) m mA) 10 NT ( 10 NT ( RE E R R U CUR 1 R C 1 R E E N ZEN ZE , Z0.1 , Z 0.1 I I 0.01 0.01 0 2 4 6 8 10 12 10 30 50 70 90 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 7. Zener Voltage versus Zener Current Figure 8. Zener Voltage versus Zener Current (V Up to 12 V) (12 V to 91 V) Z 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 EN 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 S UL 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 9. 8 × 20 (cid:4)s Pulse Waveform www.onsemi.com 5
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 8: END VIEW PIN 1. ANODE 2. NO CONNECTION 3. CATHODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BZX84C2V4ET1/D 6
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BZX84C56LT1G BZX84C5V6LT1G BZX84C5V6LT3G SZBZX84C10ET1G SZBZX84C11ET1G SZBZX84C12ET3G SZBZX84C15ET3G SZBZX84C20ET1G SZBZX84C22ET1G SZBZX84C24ET1G SZBZX84C27ET3G SZBZX84C27LT3G SZBZX84C2V4ET1G SZBZX84C2V7ET1G SZBZX84C30ET1G SZBZX84C33ET1G SZBZX84C36ET1G SZBZX84C39ET1G SZBZX84C3V0ET1G SZBZX84C3V6ET1G SZBZX84C3V9ET1G SZBZX84C3V9ET3G SZBZX84C43ET1G SZBZX84C47ET1G SZBZX84C4V3ET1G SZBZX84C51ET1G SZBZX84C56LT1G SZBZX84C5V6LT3G SZBZX84C62ET1G SZBZX84C6V2ET1G SZBZX84C75ET1G SZBZX84C9V1ET1G SZBZX84C5V6ET3G SZBZX84C68ET1G SZBZX84C3V3ET1G SZBZX84C5V6ET1G SZBZX84C7V5LT3G SZBZX84C15ET1G SZBZX84C18ET1G SZBZX84C33ET3G SZBZX84C7V5LT1G SZBZX84C27ET1G SZBZX84C12ET1G