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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet 2002 Feb 27 Supersedes data of 1999 May 25

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage k a APPLICATIONS MAM239 • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed The diodes are type branded. leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and Fig.1 Simplified outline (SOD27; DO-35) and approx. ±5% (BZX79-C) tolerance range. The series symbol. consists of 37 types with nominal working voltages from 2.4 to 75 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current − 250 mA F I non-repetitive peak reverse current t = 100 μs; square wave; see Tables 1 and 2 A ZSM p T = 25 °C prior to surge j P total power dissipation T = 50 °C; note 1 − 400 mW tot amb T = 50 °C; note 2 − 500 mW amb P non-repetitive peak reverse power t = 100 μs; square wave; − 40 W ZSM p dissipation T = 25 °C prior to surge; see Fig.3 j T storage temperature −65 +200 °C stg T junction temperature −65 +200 °C j Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series T = 25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MAX. UNIT V forward voltage I = 10 mA; see Fig.4 0.9 V F F 2002 Feb 27 2

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series SYMBOL PARAMETER CONDITIONS MAX. UNIT I reverse current R BZX79-B/C2V4 V = 1 V 50 μA R BZX79-B/C2V7 V = 1 V 20 μA R BZX79-B/C3V0 V = 1 V 10 μA R BZX79-B/C3V3 V = 1 V 5 μA R BZX79-B/C3V6 V = 1 V 5 μA R BZX79-B/C3V9 V = 1 V 3 μA R BZX79-B/C4V3 V = 1 V 3 μA R BZX79-B/C4V7 V = 2 V 3 μA R BZX79-B/C5V1 V = 2 V 2 μA R BZX79-B/C5V6 V = 2 V 1 μA R BZX79-B/C6V2 V = 4 V 3 μA R BZX79-B/C6V8 V = 4 V 2 μA R BZX79-B/C7V5 V = 5 V 1 μA R BZX79-B/C8V2 V = 5 V 700 nA R BZX79-B/C9V1 V = 6 V 500 nA R BZX79-B/C10 V = 7 V 200 nA R BZX79-B/C11 V = 8 V 100 nA R BZX79-B/C12 V = 8 V 100 nA R BZX79-B/C13 V = 8 V 100 nA R BZX79-B/C15 to BZX79-B/C75 V = 0.7V 50 nA R Znom 2002 Feb 27 3

2 Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24 N 0 X 02 Tj = 25 °C unless otherwise specified. V P F o S eb WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK lta em 27 VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT ge ico BBCZxxXxx7xx9 - Tol. ±2a%t I(ZBte)st = T5o ml. Aapprox. at I = 1 mA at I = 5 mA (saete I ZFteigsts =5 5a nmdA 6 ) at Vf R= =1 0M VHz; at tp = 100I ZμSsM; (TAa)m b = 25 °C reg nducto ±5% (C) Ztest Ztest u rs l a MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. to r 2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0 d i 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 o d 3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 e s 3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 4 5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 B Z 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 X P r 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 7 od 9 u 20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5 c 22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 se t da ri ta 24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25 e s s h e e t

2 Table 2 Per type, BZX79-B/C27 to BZX79-B/C75 N 0 X 02 Tj = 25 °C unless otherwise specified. V P F o S eb WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK lta em 27 VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT ge ico BBCZxxXxx7xx9 - Tol. ±2a%t I(ZBte)st = T2o ml. Aapprox. at I = 0.5 mA at I = 2 mA (saete I ZFteigsts =5 2a nmdA 6 ) at Vf R= =1 0M VHz; at tp = 100I ZμSsM; (TAa)m b = 25 °C reg nducto ±5% (C) Ztest Ztest u rs l a MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. to r 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 d i 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 o d 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 e s 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 5 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 B Z X P r 7 o d 9 u c se t da ri ta e s s h e e t

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to tie-point lead length 8 mm. 300 K/W th j-tp R thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W th j-a Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ = 1 Rth j-a (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 0.02 0.01 10 ≤0.001 tp δ = tp T T 1 10−1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 2002 Feb 27 6

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series 103 MBG801 300 MBG781 handbook, halfpage handbook, halfpage PZSM IF (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak Fig.4 Typical forward current as a function of reverse power dissipation versus duration. forward voltage. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ SZ 11 (mV/K) 4V3 (mV/K) 10 9V1 −1 5 3V9 8V2 7V5 3V6 6V8 6V2 5V6 5V1 −2 3V3 0 4V7 3V0 2V4 2V7 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 16IZ (mA)20 BZX79-B/C2V4 to BZX79-B/C4V3. BZX79-B/C4V7 to BZX79-B/C12. Tj = 25 to 150 °C. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of working current; typical values. working current; typical values. 2002 Feb 27 7

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D L G1 L DIMENSIONS (mm are the original dimensions) b D G1 L 0 1 2 mm UNIT max. max. max. min. scale mm 0.56 1.85 4.25 25.4 Note 1. The marking band indicates the cathode. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOD27 A24 DO-35 SC-40 97-06-09 2002 Feb 27 8

NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 27 9

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387