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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BZV90 series Voltage regulator diodes Product data sheet 1999 May 17 Supersedes data of 1996 Oct 25

NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 1 500 mW 1 anode • Tolerance series: approx. ±5% 2, 4 cathode • Working voltage range: 3 anode nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 4 APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in SOT223 plastic SMD 2, 4 packages. 1 2 3 The diodes are available in the normalized E24 approx. ±5% Top view MAM242 tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V Fig.1 Simplified outline (SOT223) and symbol. (BZV90-C2V4 to C75). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current − 400 mA F I non-repetitive peak reverse current t = 100 μs; square wave; see Table ZSM p T = 25 °C prior to surge “Per type” j P total power dissipation T = 25 °C; note 1 − 1 500 mW tot amb P non-repetitive peak reverse power t = 100 μs; square wave; − 40 W ZSM p dissipation T = 25 °C prior to surge; see Fig.2 j T storage temperature −65 +150 °C stg T junction temperature − 150 °C j Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. ELECTRICAL CHARACTERISTICS Total series T = 25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V forward voltage I = 50 mA; see Fig.3 − 1.0 V F F 1999 May 17 2

1 Per type N 9 X 99 Tj = 25 °C unless otherwise specified. V P M o S ay WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK lta em 17 VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT ge ico BCZXVX9X0- aVt ZI Z(tVes) t ardt iIf Z(tΩes)t see Faitg IsZ t4e satnd 5 IZtest (mA) aat tf V=R 1 = M 0H Vz; VROEVLTEARGSEE aTt tIpZ S= M= 1 (20A50) °μCs; reg nducto IR (μA) VR amb ula rs MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. to r 2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0 d i 2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0 o d 3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0 e s 3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0 3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0 3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0 4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0 4V7 4.4 5.0 50 80 −3.5 −1.4 0.2 5 300 3 2.0 6.0 5V1 4.8 5.4 40 60 −2.7 −0.8 1.2 5 300 2 2.0 6.0 3 5V6 5.2 6.0 15 40 −2.0 1.2 2.5 5 300 1 2.0 6.0 6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0 6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 B Z 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 V P r 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 9 od 0 u 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5 c se t da ri ta e s s h e e t

1 N 9 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK X 99 M VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT Vo P S ay BZV90- VZ (V) rdif (Ω) at IZtest IZtest (mA) at f = 1 MHz; REVERSE IZSM (A) lta em 17 CXXX at IZtest at IZtest see Figs 4 and 5 at VR = 0 V IR V(μOAL)TAGEVR aTt atmp b= = 1 2050 °μCs; ge re iconduc MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. g to u rs 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 la t 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 o r 27 25.0 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0 d i o 30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0 d e 33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9 s 36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8 39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 4 62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 B Z V P r 9 o d 0 u c se t da ri ta e s s h e e t

NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient lead length max.; note 1 83.3 K/W th j-a Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. GRAPHICAL DATA 103 MBG801 300 MBG781 handbook, halfpage handbook, halfpage PZSM IF (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak Fig.3 Forward current as a function of forward reverse power dissipation versus duration. voltage; typical values. 1999 May 17 5

NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series MBG927 1 handbook, full pagewidth SZ 4V3 (mV/K) 3V9 0 3V6 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) 1 BZV90-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 20 IZ (mA) BZV90-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 1999 May 17 6

NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT223 SC-73 99-09-13 1999 May 17 7

NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors Terms and conditions of sale ⎯ NXP Semiconductors does not give any representations or warranties, products are sold subject to the general terms and expressed or implied, as to the accuracy or completeness conditions of commercial sale, as published at of such information and shall have no liability for the http://www.nxp.com/profile/terms, including those consequences of use of such information. pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly Right to make changes ⎯ NXP Semiconductors otherwise agreed to in writing by NXP Semiconductors. In reserves the right to make changes to information case of any inconsistency or conflict between information published in this document, including without limitation in this document and such terms and conditions, the latter specifications and product descriptions, at any time and will prevail. without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products Suitability for use ⎯ NXP Semiconductors products are that is open for acceptance or the grant, conveyance or not designed, authorized or warranted to be suitable for implication of any license under any copyrights, patents or use in medical, military, aircraft, space or life support other industrial or intellectual property rights. equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be Export control ⎯ This document as well as the item(s) expected to result in personal injury, death or severe described herein may be subject to export control property or environmental damage. NXP Semiconductors regulations. Export might require a prior authorization from accepts no liability for inclusion and/or use of NXP national authorities. Semiconductors products in such equipment or Quick reference data ⎯ The Quick reference data is an applications and therefore such inclusion and/or use is at extract of the product data given in the Limiting values and the customer’s own risk. Characteristics sections of this document, and as such is Applications ⎯ Applications that are described herein for not complete, exhaustive or legally binding. any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this 1999 May 17 8

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp9 Date of release: 1999 May 17 Document order number: 9397 750 05928