Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

BZV85 series Voltage regulator diodes Rev. 03 — 10 November 2009 Product data sheet 1. Product profile 1.1 General description Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66(DO-41) glass packages. The diodes are available in the normalized E24 approximately– 5% tolerance range. Theseries consists of 33types with nominal working voltages from 3.6V to 75V. 1.2 Features n Total power dissipation: max.1.3W n Tolerance series: approximately– 5% n Working voltage range: n Non-repetitive peak reverse power nominal3.3Vto75V(E24range) dissipation: max.60W n Small hermetically sealed glass package 1.3 Applications n Stabilization purposes 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V forward voltage I =50mA - - 1 V F F P total power dissipation tot T =25(cid:176) C; [1] - - 1 W amb leadlength10mm [2] - - 1.3 W P non-repetitive peak reverse squarewave; [3] - - 60 W ZSM power dissipation t =100m s p [1] Device mounted on a Printed-CircuitBoard(PCB) with 1cm2 copper area per lead. [2] If the leads are kept at T =55(cid:176) Cat4mm from body. tp [3] T =25(cid:176) C prior to surge j

BZV85 series NXP Semiconductors Voltage regulator diodes 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] k a 2 anode 1 2 006aaa152 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BZV85series[1] - hermetically sealed glass package; axial leaded; SOD66 2leads [1] The series consists of 33types with nominal working voltages from 3.3V to75V. 4. Marking Table 4. Marking codes Type number Marking code BZV85series The diodes are type branded. BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 2 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I forward current - 500 mA F I non-repetitive peak reverse squarewave; [1] - see ZSM current t =100m s Table8 p halfsinewave; [1] - see t =10ms Table8 p P total power dissipation tot T =25(cid:176) C; [2] - 1 W amb leadlength10m m [3] - 1.3 W P non-repetitive peak reverse squarewave; [1] - 60 W ZSM power dissipation t =100m s p T junction temperature - 200 (cid:176) C j T storage temperature - 65 +200 (cid:176) C stg [1] T =25(cid:176) C prior to surge j [2] Device mounted on a PCB with 1cm2 copper area per lead. [3] If the leads are kept at T =55(cid:176) Cat4mm from body. tp BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 3 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from lead length4mm - - 110 K/W th(j-t) junction to tie-point R thermal resistance from leadlength10mm [1] - - 175 K/W th(j-a) junction to ambient [1] Device mounted on a PCB with 1cm2 copper area per lead. 103 006aab844 Rth(j-t) (K/W) d = 1 102 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10- 2 10- 1 1 10 102 103 tp (ms) 104 Fig 1. Thermal resistance from junction to tie-point as a function of pulse duration; leadlength 4mm 7. Characteristics Table 7. Characteristics T=25(cid:176) C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage I =50mA - - 1 V F F BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 4 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type T=25(cid:176) C unless otherwise specified. j BZV85- Working Differential Temperature Test Diode Reverse Non-repetitive peak Cxxx voltage resistance coefficient current capacitance current reversecurrent VZ(V) rdif(W ) SZ(mV/K) Itest Cd(pF) IR(m A) IZSM (mA) at I at I at I atf=1MHz; att =100m s; att =10ms; test test test p p V =0V T =25(cid:176) C T =25(cid:176) C R amb amb Min Max Max Min Max Max Max V (V) Max(A) Max(mA) R 3V6 3.4 3.8 15 - 3.5 - 1.0 60 450 50 1.0 8.0 2000 3V9 3.7 4.1 15 - 3.5 - 1.0 60 450 10 1.0 8.0 1950 4V3 4.0 4.6 13 - 2.7 0 50 450 5 1.0 8.0 1850 4V7 4.4 5.0 13 - 2.0 0.7 45 300 3 1.0 8.0 1800 5V1 4.8 5.4 10 - 0.5 2.2 45 300 3 2.0 8.0 1750 5V6 5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700 6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620 6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550 7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500 8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400 9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340 10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200 11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100 12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000 13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900 15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760 16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700 18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600 20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540 22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500 24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450 27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380 33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350 36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320 39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296 43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270 47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246 51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226 56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161 BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 5 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 102 mbg802 300 mbg925 IZSM IF (A) (mA) (1) 10 200 (1) (2) 1 (2) 100 10- 1 0 1 10 VZnom (V) 102 0 0.5 VF (V) 1.0 (1) t =10m s; halfsinewave; T =25(cid:176) C (1) T =200(cid:176) C p amb j (2) t =10ms; halfsinewave; T =25(cid:176) C (2) T =25(cid:176) C p amb j Fig 2. Non-repetitive peak reverse current as a Fig 3. Forward current as a function of forward function of the nominal working voltage voltage; typical values mbg926 mbg800 10 100 SZ (1) SZ (mV/K) (mV/K) 10 80 (2) 9V1 5 8V2 7V5 60 (3) 6V8 6V2 5V6 40 5V1 0 4V7 4V3 20 3V6 3V9 - 5 0 0 25 IZ (mA) 50 1 10 VZnom (V) 102 BZV85-C3V6 to BZV85-C10 I =I Z test T =25(cid:176) Cto150(cid:176) C T =25(cid:176) Cto150(cid:176) C j j For types above 7.5V the temperature coefficient is (1) Maximum values independent of current; seeTable8. (2) Typical values (3) Minimum values Fig 4. Temperature coefficient as a function of Fig 5. Temperature coefficient as a function of working current; typical values working current; typical values BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 6 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 8. Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD66 (1) k a b D L G1 L Dimensions Unit b D G1 L max 0.81 2.6 4.8 0 2 4 mm mm nom min 25.4 scale Note 1. The marking band indicates the cathode. sod066_po Outline References European Issue date version IEC JEDEC JEITA projection 97-06-20 SOD66 DO-41 09-10-09 Fig 6. Package outline SOD66(DO-41) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 BZV85 series[2] SOD66 52mm tape ammopack, axial -133 52mm reel pack, axial -113 [1] For further information and the availability of packing methods, seeSection11. [2] The series consists of 33types with nominal working voltages from 3.3V to75V. BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 7 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BZV85_SER_3 20091110 Product data sheet - BZV85_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXPSemiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table6: R redefined to R thermal resistance from junction to tie-point th(j-tp) th(j-t) • Figure1: R redefined to R thermal resistance from junction to tie-point th(j-tp) th(j-t) • Table 8 “Characteristics per type”: I redefined to I test current Ztest test • Figure 6 “Package outline SOD66(DO-41)”: updated BZV85_2 19990511 Product specification - BZV85_1 BZV85_1 19960426 Product specification - - BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 8 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 11.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 11.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Export control —This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use —NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 11.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 12. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 9 of 10

BZV85 series NXP Semiconductors Voltage regulator diodes 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 November 2009 Document identifier: BZV85_SER_3