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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product data sheet 2005 Feb 03 Supersedes data of 1999 May 11

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series FEATURES PINNING • Total power dissipation: max. 1 W PIN DESCRIPTION • Tolerance series: approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 cathode • Non-repetitive peak reverse power dissipation: 3 anode max. 40 W. APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in a SOT89 2 plastic SMD package. 3 2 1 sym096 The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BZV49-C2V4 to SC-62 plastic surface mounted package; collector pad for good heat SOT89 BZV49-C75 transfer; 3 leads note 1 Note 1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). MARKING TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − − BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − − BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − − 2005 Feb 03 2

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current − 250 mA F I non-repetitive peak reverse current t = 100 μs; square wave; see Table ZSM p T = 25 °C prior to surge “Per type” j P total power dissipation T = 25 °C; note 1 − 1 W tot amb P non-repetitive peak reverse power t = 100 μs; square wave; − 40 W ZSM p dissipation T = 25 °C prior to surge; see Fig.2 j T storage temperature −65 +150 °C stg T junction temperature − 150 °C j Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MAX. UNIT V forward voltage I = 50 mA; see Fig.3 1 V F F 2005 Feb 03 3

2 Per type N 0 X 05 Tj = 25 °C unless otherwise specified. V P F o S eb WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK lta em 03 VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT ge ico BCZXVX4X9- aVt ZI Z(tVes) t ardt iIf Z(tΩes)t see Faitg IsZ t4e satnd 5 IZtest (mA) aat tf V=R 1 = M 0H Vz; VROEVLTEARGSEE aTt tIpZ S= M= 1 (20A50) °μCs; reg nducto IR (μA) VR amb ula rs MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. to r 2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0 d i 2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0 o d 3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0 e s 3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0 3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0 3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0 4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0 4V7 4.4 5.0 50 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0 5V1 4.8 5.4 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0 4 5V6 5.2 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0 6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0 6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 B Z 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 V P r 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 4 od 9 u 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5 c 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 se t da ri ta 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 e s s h e e t

2 N 0 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK X 05 F VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT Vo P S eb BZV49- VZ (V) rdif (Ω) at IZtest IZtest (mA) at f = 1 MHz; REVERSE IZSM (A) lta em 03 CXXX at IZtest at IZtest see Figs 4 and 5 at VR = 0 V IR V(μOAL)TAGEVR aTt atmp b= = 1 2050 °μCs; ge re iconduc MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. g to u rs 27 25.1 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0 la t 30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0 o r 33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9 d i o 36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8 d e 39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 s 43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 5 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 B Z V P r 4 o d 9 u c se t da ri ta e s s h e e t

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to tie-point 15 K/W th(j-tp) R thermal resistance from junction to ambient note 1 125 K/W th(j-a) Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. GRAPHICAL DATA 103 MBG801 300 MBG781 handbook, halfpage handbook, halfpage PZSM IF (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak Fig.3 Forward current as a function of forward reverse power dissipation versus duration. voltage; typical values. 2005 Feb 03 6

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series MBG927 1 handbook, full pagewidth SZ 4V3 (mV/K) 3V9 0 3V6 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) 1 BZV49-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 20 IZ (mA) BZV49-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 2005 Feb 03 7

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 3 bp2 c w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2 mm 3.0 1.5 0.13 1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-08-03 SOT89 TO-243 SC-62 06-03-16 2005 Feb 03 8

NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 Feb 03 9

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926