BZT52-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V DESIGN SUPPORT TOOLS click logo to get started • Base P/N-E3 - RoHS-compliant, commercial grade Models • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available • Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc?99912 PARAMETER VALUE UNIT V range nom. 2.4 to 75 V Z Test current I 2.5; 5 mA ZT V specification Pulse current Z Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 3000 (8 mm tape on 7" reel) 15 000/box BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52-series BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-123 10.3 mg UL 94 V-0 260 °C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm; P 500 mW 5 mm2 pad areas tot Power dissipation Diode on ceramic substrate 0.7 mm; P 410 mW 2.5 mm2 pad areas tot Zener current See table “Electrical Characteristics “ Valid provided that electrodes are kept at Thermal resistance junction to ambient air R 300 K/W ambient temperature thJA Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.9, 20-Feb-18 1 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ADMISSABLE ZENER RANGE (1) CURRENT VOLTAGE RESISTANCE COEFFICIENT CURRENT (4) PNAURMTB ER MACROKDIENG VZ at IZT1 IZT1 IZT2 VR at IR ZIZZT a1t ZIZZKT 2at VZ TambIZ = a 4t5 °CTambIZ = a 2t5 °C V mA V nA  10-4/°C mA MIN. NOM. MAX. BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - - BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6 WA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2 WB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8 WC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5 WD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2 WE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1 WF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12 WI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 (2) < 1000 (3) typ. +10 (2) - - BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52C75 X5 70 75 79 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) - - Notes • I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 20-Feb-18 2 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ADMISSABLE ZENER RANGE (1) CURRENT VOLTAGE RESISTANCE COEFFICIENT CURRENT (4) PNAURMTB ER MACROKDIENG VZ at IZT1 IZT1 IZT2 VR at IR ZZ at IZT1 ZIZZKT 2at VZ TambIZ = a 4t5 °C TambI Z= a 2t 5 °C V mA V nA  10-4/°C mA MIN. NOM. MAX. BZT52B2V4 W1 2.35 2.4 2.45 5 1 - - 85 600 -9 to -4 - - BZT52B2V7 W2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52B3V0 W3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52B3V3 W4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52B3V6 W5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52B3V9 W6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52B4V3 W7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52B4V7 W8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52B5V1 W9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52B5V6 WA 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52B6V2 WB 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52B6V8 WC 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52B7V5 WD 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52B8V2 WE 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52B9V1 WF 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52B10 WG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52B11 WH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52B12 WI 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52B13 WK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52B15 WL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52B16 WM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52B18 WN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52B20 WO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52B22 WP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52B24 WR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52B27 WS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52B30 WT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52B33 WU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52B36 WW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52B39 WX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52B43 WY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52B47 WZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B51 X1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B56 X2 54.9 56 57.1 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - BZT52B62 X3 60.8 62 63.2 2.5 0.5 - - < 150 (2) < 1000 (3) typ. +10 (2) - - BZT52B68 X4 66.6 68 69.4 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52B75 X5 73.5 75 76.5 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) - - Notes • I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 20-Feb-18 3 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb mA Ω 103 100 T = 25 °C J 102 5 4 IF 10 r 3 33 1 TJ = 100 °C zj 2 27 22 10-1 T = 25 °C 10 18 J 10-2 15 5 4 12 10-3 3 10 2 10-4 6.8/8.2 6.2 10-5 1 0 0.2 0.4 0.6 0.8 1V 0.1 2 5 1 2 5 10 2 5 100 mA 18114 V 18119 I F Z Fig. 1 - Forward characteristics Fig. 4 - Dynamic Resistance vs. Zener Current mW Ω 500 103 T = 25 °C 7 j 5 400 4 P Rzj 3 47 +4 531 tot 2 39 300 36 102 200 7 5 4 3 100 2 0 10 0 100 200 °C 0.1 2 3 4 5 1 2 3 4 5 10 18888 Tamb 18120 IZ mA Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Current Ω Ω 103 1000 ΔV 5 TJ = 25 °C 54 Rzth = RthA x VZ x ΔTZ 4 3 j rzj 32 Rzth 2 100 102 54 54 3 3 2 2 10 2.7 10 3.6 5 5 4 4.7 4 3 5.1 3 negative positive 2 2 1 5.6 1 0.1 2 5 1 2 5 10 2 5 100 mA 1 2 3 4 5 10 2 3 4 5 100 V 18117 IZ 18121 VZ at IZ = 5 mA Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18 4 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors Ω mV/°C 100 100 I = 5 mA 7 Z 54 ΔVZ 80 Rzj 3 ΔTj 2 60 10 7 40 5 4 3 20 2 T = 25 °C Ij = 5 mA 1 Z 0 1 2 3 4 5 10 2 3 4 5 100 V 0 20 40 60 80 100 V 18122 V 18136 V at I = 2 mA Z Z Z Fig. 7 - Dynamic Resistance vs. Zener Voltage Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C V 25 9 8 ΔΔVTjZ 2105 IZ = 2015 mm mAAA ΔVZ 76 VZ at IZ = 5 mA 51 5 43 10 4 36 3 5 2 1 0 0 IZ = 5 mA - 1 - 5 0 20 40 60 80 100 120 140 °C 1 2 3 4 5 10 2 3 4 5 100 V 18158 Tj 18135 V at I = 5 mA V Z≥ 27Z V, I = 2 mA Fig. 8 - Temperature Dependence of Zener Voltage vs. Fig. 11 - Change of Zener Voltage vs. Junction Temperature Zener Voltage V V 0.8 1.6 25 15 ΔVZ = rZth x IZ 00..76 VZ at IZ = 5 mA 10 11..42 IVZZ = > 5= m56A V; IZ = 2.5 mA ΔV 0.5 ΔVZ 1.0 Z 8 0.8 0.4 7 0.6 0.3 6.2 0.4 0.2 5.9 0.2 0.1 5.6 0 0 5.1 - 0.2 - 1 - 0.4 3.6 4.7 1 10 100 V - 0.20 20 40 60 80 100 120 140 C 18159 VZ at IZ = 5 mA 18124 T j Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.9, 20-Feb-18 5 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors V mA 5 ΔVZ = rzth x IZ 50 Tj = 25 °C2.7 3.9 5.6 3.3 4.7 6.8 4 40 ΔV lZ 8.2 Z 3 30 I = 5 mA Z 2 20 Test 1 I = 2.5 mA 10 cIu5rr emnAt Z Z 0 0 0 20 40 60 80 100 V 0 1 2 3 4 5 6 7 8 9 10 V 18160 VZ at IZ = 5 mA 18111 VZ Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Fig. 14 - Breakdown Characteristics Thermal Equilibrium vs. Zener Voltage mA 30 10 12 Tj = 25 °C lZ 15 20 18 22 Test 27 10 current 3336 IZ 5 mA 0 0 10 20 30 40 V 18112 VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics Rev. 1.9, 20-Feb-18 6 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BZT52-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOD-123 x. a m 4) 0 0 0. 1 ( 0. 1.35 (0.053) 1 (0.039) 0.2 (0.008) 00..4255 ((00..001180)) 0° to 8° 0.15 (0.006) 0.10 (0.004) 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 33..8555 ((00..115420)) 1.7 (0.067) 1.40 (0.055) 2.5 (0.098) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.9, 20-Feb-18 7 Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: BZT52C24-GS08 BZT52C8V2-V-GS08 BZT52C36-V-GS08 BZT52C12-V-GS08 BZT52C24-V-GS08 BZT52C9V1- V-GS08 BZT52C16-V-GS08 BZT52C13-V-GS08 BZT52C10-V-GS08 BZT52C22-V-GS08 BZT52C4V3-V-GS08 BZT52C27-V-GS08 BZT52C5V6-V-GS08 BZT52C3V9-V-GS08 BZT52C30-V-GS08 BZT52B10-V-GS08 BZT52B10- V-GS18 BZT52B11-V-GS08 BZT52B11-V-GS18 BZT52B12-V-GS08 BZT52B12-V-GS18 BZT52B13-V-GS08 BZT52B13-V-GS18 BZT52B15-V-GS08 BZT52B15-V-GS18 BZT52B16-V-GS08 BZT52B16-V-GS18 BZT52B18-V- GS08 BZT52B18-V-GS18 BZT52B2V4-V-GS08 BZT52B2V4-V-GS18 BZT52B2V7-V-GS08 BZT52B2V7-V-GS18 BZT52B20-V-GS08 BZT52B20-V-GS18 BZT52B22-V-GS08 BZT52B22-V-GS18 BZT52B24-V-GS08 BZT52B24-V- GS18 BZT52B27-V-GS08 BZT52B27-V-GS18 BZT52B3V0-V-GS08 BZT52B3V0-V-GS18 BZT52B3V3-V-GS08 BZT52B3V3-V-GS18 BZT52B3V6-V-GS08 BZT52B3V6-V-GS18 BZT52B3V9-V-GS08 BZT52B3V9-V-GS18 BZT52B30-V-GS08 BZT52B30-V-GS18 BZT52B33-V-GS08 BZT52B33-V-GS18 BZT52B36-V-GS08 BZT52B36-V- GS18 BZT52B39-V-GS08 BZT52B39-V-GS18 BZT52B4V3-V-GS08 BZT52B4V3-V-GS18 BZT52B4V7-V-GS08 BZT52B4V7-V-GS18 BZT52B43-V-GS08 BZT52B43-V-GS18 BZT52B47-V-GS08 BZT52B47-V-GS18 BZT52B5V1- V-GS08 BZT52B5V1-V-GS18 BZT52B5V6-V-GS08 BZT52B5V6-V-GS18 BZT52B51-V-GS08 BZT52B51-V-GS18 BZT52B56-V-GS08 BZT52B56-V-GS18 BZT52B6V2-V-GS08 BZT52B6V2-V-GS18 BZT52B6V8-V-GS08 BZT52B6V8-V-GS18 BZT52B62-V-GS08 BZT52B62-V-GS18 BZT52B68-V-GS08 BZT52B68-V-GS18 BZT52B7V5- V-GS08 BZT52B7V5-V-GS18 BZT52B75-V-GS08 BZT52B75-V-GS18 BZT52B8V2-V-GS08 BZT52B8V2-V-GS18 BZT52B9V1-V-GS08 BZT52B9V1-V-GS18 BZT52C10-V-GS18 BZT52C11-V-GS18 BZT52C12-V-GS18 BZT52C13- V-GS18 BZT52C16-V-GS18 BZT52C18-V-GS18 BZT52C2V4-V-GS18 BZT52C2V7-V-GS18 BZT52C20-V-GS18 BZT52C24-V-GS18 BZT52C27-V-GS18