ICGOO在线商城 > 分立半导体产品 > 二极管 - 齐纳 - 单 > BZT52C3V3LP-7
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BZT52C3V3LP-7产品简介:
ICGOO电子元器件商城为您提供BZT52C3V3LP-7由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BZT52C3V3LP-7价格参考。Diodes Inc.BZT52C3V3LP-7封装/规格:二极管 - 齐纳 - 单, Zener Diode 3.3V 250mW ±6% Surface Mount X1-DFN1006-2。您可以下载BZT52C3V3LP-7参考资料、Datasheet数据手册功能说明书,资料中有BZT52C3V3LP-7 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ZENER 3.3V 250MW 2DFN稳压二极管 3.3V 250mW |
产品分类 | 单二极管/齐纳分离式半导体 |
品牌 | Diodes Incorporated |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,Diodes Incorporated BZT52C3V3LP-7- |
数据手册 | |
产品型号 | BZT52C3V3LP-7 |
PCN设计/规格 | |
RoHS指令信息 | http://diodes.com/download/4349 |
不同If时的电压-正向(Vf) | 900mV @ 10mA |
不同 Vr时的电流-反向漏电流 | 5µA @ 1V |
产品目录页面 | |
产品种类 | 稳压二极管 |
供应商器件封装 | 2-DFN1006(1.0x0.6) |
其它名称 | BZT52C3V3LPDICT |
其它图纸 | |
功率-最大值 | 250mW |
功率耗散 | 250 mW |
包装 | 剪切带 (CT) |
商标 | Diodes Incorporated |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
容差 | ±6% |
封装 | Reel |
封装/外壳 | 2-XFDFN |
封装/箱体 | DFN1006-2 |
工作温度 | -65°C ~ 150°C |
工厂包装数量 | 3000 |
最大反向漏泄电流 | 5 uA |
最大工作温度 | + 150 C |
最大齐纳阻抗 | 95 Ohms |
最小工作温度 | - 65 C |
标准包装 | 1 |
电压-齐纳(标称值)(Vz) | 3.3V |
电压容差 | 6 % |
电压温度系数 | - 1.75 mV/C |
系列 | BZT52C3V3 |
配置 | Single |
阻抗(最大值)(Zzt) | 95 欧姆 |
齐纳电压 | 3.3 V |
BZT52C2V4LP - BZT52C39LP SURFACE MOUNT ZENER DIODE Features Mechanical Data Ultra-Small Leadless Surface Mount Package Case: X1-DFN1006-2 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green" Molding Compound; Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. “Green” Device (Note 3) Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Marking Information Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging (Type Number)-7* Commercial X1-DFN1006-2 3,000/Tape & Reel (Type Number)-7B** Commercial X1-DFN1006-2 10,000/Tape & Reel *Add “-7” to the appropriate type number in Electrical Characteristics Table. Example: 6.2V Zener = BZT52C6V2LP-7. **Add “-7B” to the appropriate type number in Electrical Characteristics Table. Example: 6.2V Zener = BZT52C6V2LP-7B. Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information BZT52CxxLP-7 BZT52CxxLP-7B xx xx xx = Product Type Marking Code Top View Top View Dot Denotes Bar Denotes Cathode Side Cathode Side OR xx Top View Bar Denotes Cathode Side BZT52C2V4LP - BZT52C39LP 1 of 5 May 2015 Document number: DS30506 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
BZT52C2V4LP - BZT52C39LP Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Forward Voltage (Note 5) @ IF = 10mA VF 0.9 V Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) TA = +25°C PD 250 mW Thermal Resistance, Junction to Ambient Air (Note 6) TA = +25°C RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Maximum Temperature Zener Voltage Range Maximum Zener Impedance Reverse Test Coefficient Type Marking (Note 5) f = 1kHz Current Current Number Code (Note 5) @mV IZ/°TCC IZTC VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR Nom (V) Min (V) Max (V) mA Ω mA µA V Min Max mA BZT52C2V4LP WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7LP W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0LP W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3LP W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6LP W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9LP W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3LP W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7LP W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1LP 9Y 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 BZT52C5V6LP 9A 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 BZT52C6V2LP 9B 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 BZT52C6V8LP 9C 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 (Note 7) BZT52C7V5LP 9D 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8V2LP 9E 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1LP 9F 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10LP 9G 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11LP 9H 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12LP 9J 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13LP 9K 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15LP 9L 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16LP 9M 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18LP 9N 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20LP 9P 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 - 5 BZT52C22LP 9R 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 - 5 BZT52C24LP 9S 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 - 5 BZT52C36LP 9W 36 34.0 38.0 2 90 350 0.5 0.1 25.2 36.5 - 5 BZT52C39LP 9X 39 37.0 41.0 2 130 350 0.5 0.1 27.3 36.8 - 5 Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can be found on our website at http://www.diodes.com. 7. Device can withstand a repetitive, 1A pulse with tp = 300μs and T = 3s (forward or reverse direction). BZT52C2V4LP - BZT52C39LP 2 of 5 May 2015 Document number: DS30506 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
BZT52C2V4LP - BZT52C39LP 300 A)1000 m W) 250 Note 6 AGE ( TA= 150°C TA= 25°C N (m VOLT 100 TA= 125°C O 200 D TA= -40°C ATI AR TA= 105°C P W SI R S 150 O 10 DI F TA= 85°C ER US TA= -65°C W O 100 E O N P A , D NT 1 P 50 TA S N , IF 0 I 0.1 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 T , AMBIENT TEMPERATURE (°C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Fig. 1 Power Derating Curve Fig. 2 Typical Forward Characteristics 100 50 C5V6LP C6V8LP 40 mA) 10 TA = 25°C mA) C6V2LP C8V2LP T ( T ( N N 30 E E R R R R U 1 U C C R C4V7LP R 20 E E N N E E Z Z , Z 0.1 , Z I I 10 Test Current IZ 5.0mA 0.01 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 9 10 V , ZENER VOLTAGE (V) V , ZENER VOLTAGE (V) Z Z Fig. 3 Typical Reverse Characteristics Fig. 4 Typical Zener Breakdown Characteristics 30 C10LP C12LP C36LP C39LP C15LP A) A) m m NT ( 20 C18LP NT ( E E R R R R U C22LP U C C R R NE NE Test Current IZ I, ZEZ10 Test5 C.0umrreAnt IZ I, ZEZ 2.0mA 0 0 10 20 30 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Fig. 5 Typical Zener Breakdown Characteristics Fig. 6 Typical Zener Breakdown Characteristics BZT52C2V4LP - BZT52C39LP 3 of 5 May 2015 Document number: DS30506 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
BZT52C2V4LP - BZT52C39LP Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A X1-DFN1006-2 A1 Dim Min Max Typ A 0.47 0.53 0.50 D A1 0 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 R e - - 0.40 E b L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm L e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 X Dimensions Value (in mm) C 0.70 Y G 0.30 X 0.40 X1 1.10 Y 0.70 G C BZT52C2V4LP - BZT52C39LP 4 of 5 May 2015 Document number: DS30506 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
BZT52C2V4LP - BZT52C39LP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com BZT52C2V4LP - BZT52C39LP 5 of 5 May 2015 Document number: DS30506 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: D iodes Incorporated: BZT52C3V3LP-7 BZT52C4V3LP-7 BZT52C3V9LP-7 BZT52C2V7LP-7 BZT52C4V7LP-7 BZT52C36LP-7 BZT52C3V6LP-7 BZT52C3V0LP-7 BZT52C39LP-7 BZT52C2V4LP-7 BZT52C10LP-7 BZT52C11LP-7 BZT52C12LP-7 BZT52C13LP-7 BZT52C15LP-7 BZT52C16LP-7 BZT52C18LP-7 BZT52C20LP-7 BZT52C22LP-7 BZT52C24LP-7 BZT52C5V1LP-7 BZT52C5V6LP-7 BZT52C6V2LP-7 BZT52C6V8LP-7 BZT52C7V5LP-7 BZT52C8V2LP-7 BZT52C9V1LP-7