BYW29E-100 Ultrafast power diode Rev.01 - 4 June 2018 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • Fast switching • Guaranteed ESD capability • High thermal cycling performance • Low on-state loss • Low thermal resistance • Rugged: reverse voltage surge capability • Soft recovery minimizes power-consuming oscillations 3. Applications • Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 100 V RRM voltage I average forward current δ = 0.5 ; T ≤ 128 °C; square-wave pulse; 8 A F(AV) mb Fig. 1; Fig. 2 I repetitive peak forward δ = 0.5 ; t = 25 μs; T ≤ 128 °C; 16 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms; T = 25 °C; sine-wave pulse 80 A FSM p j(init) forward current t = 8.3 ms; T = 25 °C; sine-wave pulse 88 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A; T = 150 °C; Fig. 4 - 0.8 0.895 V F F j Dynamic characteristics t reverse recovery time I = 1 A; V = 30 V; dI /dt = 100 A/μs; - 20 25 ns rr F R F T = 25 °C; ramp recovery; Fig. 5; Fig. 7 j Electrostatic discharge V electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ - - 8 kV ESD voltage

WeEn Semiconductors BYW29E-100 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb 2 A anode K A mb mb mounting base; cathode 001aaa020 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYW29E-100 TO-220AC plastic single-ended package; heatsink mounted; SOD59 1 mounting hole; 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number Marking codes BYW29E-100 BYW29E-100 BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 2 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V repetitive peak reverse 100 V RRM voltage V crest working reverse 100 V RWM voltage V reverse voltage 100 V R I average forward current δ = 0.5 ; T ≤ 128 °C ;square-wave pulse; 8 A F(AV) mb Fig. 1; Fig. 2 I repetitive peak forward δ = 0.5 ; t = 25 μs; T ≤ 128 °C; 16 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms; T = 25 °C; sine-wave pulse 80 A FSM p j(init) forward current t = 8.3 ms; T = 25 °C; sine-wave pulse 88 A p j(init) I repetitive peak reverse δ = 0.001 ; t = 2 μs 0.2 A RRM p current I non-repetitive peak t = 100 μs 0.2 A RSM p reverse current T storage temperature -40 to 150 °C stg T junction temperature 150 °C j Electrostatic discharge V electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ 8 kV ESD voltage I = I × √δ a = form factor = I / I F(AV) F(RMS) F(RMS) F(AV) V = 0.791 V; R = 0.013 Ω V = 0.791 V; R = 0.013 Ω o s o s Fig. 1. Forward power dissipation as a function of Fig. 2. Forward power dissipation as a function of average forward current; square waveform; average forward current; sinusoidal waveform; maximum values maximum values BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 3 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 3 - - 2.7 K/W th(j-mb) from junction to mounting base R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 4 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A; T = 25 °C; Fig. 4 - 0.92 1.05 V F F j I = 20 A; T = 25 °C; Fig. 4 - 1.1 1.3 V F j I = 8 A; T = 150 °C; Fig. 4 - 0.8 0.895 V F j I reverse current V = 100 V; T = 25 °C - 2 10 μA R R j V = 100 V; T = 100 °C - 0.2 0.6 mA R j Dynamic characteristics Q recovered charge I = 2 A; V = 30 V; dI /dt = 20 A/μs; - 4 11 nC r F R F T = 25 °C; Fig. 5; Fig. 6 j t reverse recovery time I = 1 A; V = 30 V; dI /dt = 100 A/μs; - 20 25 ns rr F R F T = 25 °C; ramp recovery; Fig. 5; Fig. 7 j I = 0.5 A; I = 1 A; I = 0.25 A; - 15 20 ns F R R(meas) T = 25 °C; step recovery; Fig. 8 j v forward recovery voltage I = 1 A; dI /dt = 10 A/μs; T = 25 °C; - 1 - V FRM F F j Fig. 9 dlF IF dt trr time 25 % Qr 100 % IR IRM 003aac562 (1) T = 150 °C; typical values Fig. 5. Reverse recovery definitions; ramp recovery j (2) T = 150 °C; maximum values j (3) T = 25 °C; maximum values j V = 0.791 V; R = 0.013 Ω o s Fig. 4. Forward current as a function of forward voltage BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 5 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode (1) I = 1 A; T = 25 °C (1) I = 1 A; T = 25 °C F j F j (2) I = 2 A; T = 25 °C (2) I = 10 A; T = 25 °C F j F j (3) I = 5 A; T = 25 °C F j (4) I = 10 A; T = 25 °C Fig. 7. Reverse recovery time as a function of rate of F j Fig. 6. Recovered charge as a function of rate of change of forward current; maximum values change of forward current; maximum values IF time VF VFRM VF time 001aab912 Fig. 8. Reverse recovery definitions; step recovery Fig. 9. Forward recovery definitions BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 6 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode 11. Package outline BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 7 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 12. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 8 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 9 / 10

WeEn Semiconductors BYW29E-100 Ultrafast power diode 13. Contents 1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................4 10. Characteristics.............................................................5 11. Package outline ...........................................................7 12. Legal information ........................................................8 13. Contents .....................................................................10 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 4 June 2018 BYW29E-100 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 June 2018 10 / 10

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