ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > BYW29-200G
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BYW29-200G产品简介:
ICGOO电子元器件商城为您提供BYW29-200G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BYW29-200G价格参考。ON SemiconductorBYW29-200G封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 200V 8A TO-220-2。您可以下载BYW29-200G参考资料、Datasheet数据手册功能说明书,资料中有BYW29-200G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ULT FAST 200V 8A TO220-2整流器 200V 8A UltraFast |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,整流器,ON Semiconductor BYW29-200GSWITCHMODE™ |
数据手册 | |
产品型号 | BYW29-200G |
不同If时的电压-正向(Vf) | 1.3V @ 20A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 5µA @ 200V |
二极管类型 | 标准 |
产品 | Ultra Fast Recovery Rectifiers |
产品目录页面 | |
产品种类 | 整流器 |
供应商器件封装 | TO-220-2 |
其它名称 | BYW29-200G-ND |
包装 | 管件 |
反向恢复时间(trr) | 35ns |
反向电压 | 200 V |
反向电流IR | 5 uA |
商标 | ON Semiconductor |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-2 |
封装/箱体 | TO-220-2 |
工作温度-结 | -65°C ~ 175°C |
工厂包装数量 | 50 |
恢复时间 | 35 ns |
最大工作温度 | + 175 C |
最大浪涌电流 | 100 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
正向电压下降 | 1.3 V at 20 A |
正向连续电流 | 16 A |
热阻 | 3°C/W Jc |
电压-DC反向(Vr)(最大值) | 200V |
电流-平均整流(Io) | 8A |
系列 | BYW29 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
BYW29-200 SWITCHMODE(cid:2) Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. Features http://onsemi.com • 175°C Operating Junction Temperature • Popular TO−220 Package ULTRAFAST • Epoxy Meets UL 94 V−0 @ 0.125 in RECTIFIERS • Low Forward Voltage • 8.0 AMPERES Low Leakage Current • 200 VOLTS High Temperature Glass Passivated Junction • Pb−Free Package is Available* 1 Mechanical Characteristics • 4 Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 3 • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: MARKING 260°C Max. for 10 Seconds • 4 DIAGRAM Device Meets MSL1 Requirements • ESD Ratings: Machine Model, C (> 400 V) Human Body Model, 3B (> 8000 V) MAXIMUM RATINGS Rating Symbol Value Unit CASE 221B AY WWG Peak Repetitive Reverse Voltage VRRM 200 V TO−220B BYW29-200 Working Peak Reverse Voltage VRWM 1 PLASTIC KA DC Blocking Voltage VR 3 Average Rectified Forward Current IF(AV) 8.0 A Total Device, (Rated VR), TC = 150°C Peak Repetitive Forward Current IFM 16 A (Rated VR, Square Wave, 20 kHz), A = Assembly Location TC = 150°C Y = Year Nonrepetitive Peak Surge Current IFSM 100 A WW = Work Week (Surge Applied at Rated Load Conditions BYW80−200 = Device Code Half−wave, Single Phase, 60 Hz) G = Pb−Free Package Operating Junction Temperature and TJ, Tstg −65 to +175 °C KA = Diode Polarity Storage Temperature Range ORDERING INFORMATION THERMAL CHARACTERISTICS Maximum Thermal Resistance, R(cid:2)JC 3.0 °C/W Device Package Shipping Junction−to−Case BYW29−200 TO−220 50 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended BYW29−200G TO−220 50 Units/Rail Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2008 − Rev. 2 BYW29/D
BYW29−200 ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 5.0 A, TC = 100°C) 0.85 (iF = 20 A, TC = 25°C) 1.3 Maximum Instantaneous Reverse Current (Note 1) iR (cid:3)A (Rated Dc Voltage, TJ = 100°C) 600 (Rated Dc Voltage, TJ = 25°C) 5.0 Maximum Reverse Recovery Time trr ns (IF = 1.0 A, di/dt = 50 A/(cid:3)s) 35 (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) 25 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle ≤2.0%. 100 1000 70 50 (cid:3)T ( A) 100 TJ = 175°C N E R R 10 U 100°C 30 C E S 20 ER 1.0 25°C S) EV P R AM , R T ( I 0.1 N 10 E R R CU 7.0 0.01 D 0 20 40 60 80 100 120 140 160 180 200 R WA 5.0 VR, REVERSE VOLTAGE (V) R O Figure 2. Typical Reverse Current* F S * The curves shown are typical for the highest voltage device in the U 3.0 O grouping. Typical reverse current for lower voltage selections can be E TAN 2.0 estimated from these same curves if VR is sufficiently below rated VR. N A , INSTF 1.0 TJ = 175°C 100°C 25°C MPS) 91.00 RATED VR APPLIED i A NT ( 8.0 dc 0.7 E R 7.0 R U 0.5 D C 6.0 SQUARE WAVE R A 5.0 W R 0.3 O 4.0 F E G 3.0 0.2 A R E 2.0 V A , V) 1.0 0.1 F(A 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 I 140 150 160 170 180 vF, INSTANTANEOUS VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case http://onsemi.com 2
BYW29−200 NT (AMPS) 1124 dc RR(N(cid:2)(cid:2)OJJAA H ==E 16A60T°° CCSI//NWWK) ON (WATTS) 981..000 TJ = 175°C RRE 10 PATI 7.0 SQUARE WAVE WARD CU 8.0 SQUARE WAVE ER DISSI 65..00 dc OR 6.0 OW 4.0 F P E E AG 4.0 dc AG 3.0 R R E E 2.0 AV 2.0 SQUARE WAVE AV , V) , V) 1.0 A A F( 0 F( 0 I 0 20 40 60 80 100 120 140 160 180 200 P 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Ambient Figure 5. Power Dissipation D) E 1.0 Z LI A D = 0.5 M R 0.5 O N E ( C N 0.2 0.1 A T S ESI 0.1 0.05 Z(cid:2)JC(t) = r(t) R(cid:2)JC AL R 0.01 P(pk) R(cid:2)JC = 1.5 °C/W MAX M D CURVES APPLY FOR POWER ER0.05 t1 PULSE TRAIN SHOWN ENT TH0.02 SINGLE PULSE DUTY CYCLEt,2 D = t1/t2 RTJE(pAk)D - TTCIM =E P A(pTk) TZ(cid:2)1JC(t) SI N RA0.01 r(t), T 0.01 0.02 0.05 0.1 0.2 0.5 1.0 t2, .T0IME (ms)5.0 10 20 50 100 200 500 1000 Figure 6. Thermal Response 1000 pF) 300 TJ = 25°C E ( C N A T CI 100 A P A C C, 30 10 1.0 10 100 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance http://onsemi.com 3
BYW29−200 PACKAGE DIMENSIONS TO−220 CASE 221B−04 ISSUE E NOTES: C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Q B F T S 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX 4 A 0.595 0.620 15.11 15.75 B 0.380 0.405 9.65 10.29 A C 0.160 0.190 4.06 4.82 U D 0.025 0.035 0.64 0.89 1 3 F 0.142 0.161 3.61 4.09 H G 0.190 0.210 4.83 5.33 H 0.110 0.130 2.79 3.30 K J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.14 1.52 Q 0.100 0.120 2.54 3.04 L R 0.080 0.110 2.04 2.79 D R S 0.045 0.055 1.14 1.39 T 0.235 0.255 5.97 6.48 G J U 0.000 0.050 0.000 1.27 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com BYW29/D 4
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