BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AC (DO-15) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling I 1.0 A F(AV) application in switching mode converters and inverters for VRRM 800 V, 1000 V consumer, computer and telecommunication. I 30 A FSM t 75 ns MECHANICAL DATA rr V at I 1.3 V Case: DO-204AC, molded epoxy over glass body F F Molding compound meets UL 94 V-0 flammability rating T max. 175 °C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-204AC (DO-15) Terminals: Matte tin plated leads, solderable per Diode variation Single die J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT Maximum repetitive peak reverse voltage V 800 1000 V RRM Maximum RMS voltage V 560 700 V RMS Maximum DC blocking voltage V 800 1000 V DC Maximum average forward rectified current 0.375" (9.5 mm) I 1.0 A lead length (fig. 1) F(AV) Peak forward surge current 10 ms single half sine-wave I 30 A superimposed on rated load FSM Non repetitive peak reverse energy E (1) 10 mJ RSM Operating junction and storage temperature range T , T -65 to +175 °C J STG Note (1) Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 μs R J J Revision: 13-Jun-16 1 Document Number: 88554 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYV26DGP BYV26EGP UNIT Minimum avalanche breakdown voltage 100 μA V 900 1100 V BR T = 25 °C 2.5 J Maximum instantaneous forward voltage 1.0 A V V F T = 175 °C 1.3 J Maximum DC reverse current at rated DC TA = 25 °C 5.0 I μA blocking voltage T = 165 °C R 150 A Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, t 75 ns I = 0.25 A rr rr Typical junction capacitance 4.0 V, 1 MHz C 15 pF J THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT R (1) 70 JA Typical thermal resistance °C/W R (2) 16 JL Notes (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYV26EGP-E3/54 0.428 54 4000 13" diameter paper tape and reel BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging Revision: 13-Jun-16 2 Document Number: 88554 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.2 100 A) Resistive or TL = Lead Temperature Current ( 1.0 Inductive Load Loena dH eMaotsuinntkesd urrent (A) 10 TJ = 175 °C d 0.8 C ctifie ward TJ = 150 °C Re 0.6 or 1 Average Forward 00..24 00..34775"" x M( 90o.C.5u4 on7mpt"em p(d1e) 2roL nPem aaPmdd.C s TLx.ABe 1n=.2g Atmhm mobn)ient Temperature Instantaneous F 0.1 TJ = 25 °CTJ = 125 °C 0 0.01 0 25 50 75 100 125 150 175 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Voltage Characteristics 1.8 100 D = 0.8 TJ = 175 °C 1.6 D = 0.3 D = 0.5 ge TJ = 165 °C Average Power Loss (W) 111000......024468 D = 0D.1 = 0.2 TD = 1.0 antaneous Reverse LeakaCurrent (μA) 0.010.0111 TTJJ == 2152 5° C°C st 0.2 D = tp/T tp In 0 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 Average Forward Current (A) Percent of Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics 100 100 )A 10 ms SiTnJg =le THJ aMlf aSxi.ne-Wave Tf J= =1 .205 M °CHz ( tnerruC )Fp( ecn Vsig = 50 mVp-p egruS 10 aticap 10 draw aC no roF k itcnu a J e P 1 1 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance Revision: 13-Jun-16 3 Document Number: 88554 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor   100  )W  /C °( e  c  n a d  e pm  I la 10  m re  h T  tneis 0.375" M(9o.5u nmtemd) oLne aPd.C L.Ben.gth on  n 0.47" x 0.47" (12 mm x 12 mm)  a rT Copper Pads  1 0.01 0.1 1 10 100  t - Pulse Duration (s)   Fig. 7 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 13-Jun-16 4 Document Number: 88554 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: BYV26DGP-E3/54 BYV26DGP-E3/73 BYV26EGP-E3/54 BYV26EGP-E3/73