BYV25X-600 Rectifier diode, ultrafast Rev.02 - 30 January 2018 Product data sheet 1. General description Ultrafast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Fast switching • Isolated package • Low forward voltage drop • Low thermal resistance • Soft recovery characteristic 3. Applications • High frequency switched-mode power supplies • Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current δ = 0.5; square-wave pulse; T ≤ 115 °C; 5 A F(AV) h Fig. 1; Fig. 2 I repetitive peak forward δ = 0.5; square-wave pulse; T ≤ 115 °C 10 A FRM h current I non-repetitive peak t = 10 ms; T = 25 °C; sine-wave pulse 60 A FSM p j(init) forward current t = 8.3 ms; T = 25 °C; sine-wave pulse 66 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A; T = 25 °C; Fig. 4 - 1.12 1.30 V F F j I = 5 A; T = 150 °C; Fig. 4 - 0.97 1.11 V F j Dynamic characteristics t reverse recovery time I = 1 A; V = 30 V; dI /dt = 100 A/μs; - 50 60 ns rr F R F T = 25 °C; Fig. 5 j

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb 2 A anode K A mb n.c. mounting base; isolated 001aaa020 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV25X-600 TO-220F plastic single-ended package; isolated heatsink mounted; SOD113 1 mounting hole; 2-lead TO-220 "full pack" 7. Marking Table 4. Marking codes Type number Marking codes BYV25X-600 BYV25X-600 BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 2 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V repetitive peak reverse 600 V RRM voltage V crest working reverse 600 V RWM voltage V reverse voltage δ = 1.0; square wave pulse; T ≤ 100 °C 600 V R h I average forward current δ = 0.5; square-wave pulse; T ≤ 115 °C; 5 A F(AV) h Fig. 1; Fig. 2 I repetitive peak forward δ = 0.5; square-wave pulse; T ≤ 115 °C 10 A FRM h current I non-repetitive peak t = 10 ms; T = 25 °C; sine-wave pulse 60 A FSM p j(init) forward current t = 8.3 ms; T = 25 °C; sine-wave pulse 66 A p j(init) T storage temperature -40 to 150 °C stg T junction temperature 150 °C j 003aac347 003aac348 10 8 Ptot Ptot (W) δ = 1 (W) 8 a = 1.57 6 1.9 0.5 6 2.2 2.8 4 0.2 4.0 4 0.1 2 2 0 0 0 2 4 6 8 0 2 4 6 IF(AV) (A) IF(AV) (A) I = I × √δ a = form factor = I / I F(AV) F(RMS) F(RMS) F(AV) Fig. 1. Forward power dissipation as a function of Fig. 2. Forward power dissipation as a function of average forward current; square waveform; average forward current; sinusoidal waveform; maximum values maximum values BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 3 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance with heatsink compound; Fig 3 - - 5.5 K/W th(j-h) from junction to without heatsink compound - - 5.9 K/W heatsink R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient 001aaf257 10 Zth(j-h) (K/W) 1 10-1 tp P δ = T 10-2 tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig. 3. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit V RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all - - 2500 V isol(RMS) pins to external heatsink; sinusoidal waveform; clean and dust free C isolation capacitance f = 1 MHz; from cathode to external - 10 - pF isol heatsink BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 4 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A; T = 25 °C; Fig. 4 - 1.12 1.30 V F F j I = 5 A; T = 150 °C; Fig. 4 - 0.97 1.11 V F j I reverse current V = 600 V; T = 25 °C - 2 50 μA R R j V = 600 V; T = 100 °C - 0.1 0.35 mA R j Dynamic characteristics Q recovered charge I = 2 A; V = 30 V; dI /dt = 20 A/μs; - 40 70 nC r F R F T = 25 °C; Fig. 5 j t reverse recovery time I = 1 A; V = 30 V; dI /dt = 100 A/μs; - 50 60 ns rr F R F T = 25 °C; Fig. 5 j I peak reverse recovery I = 10 A; V = 30 V; dI /dt = 50 A/μs; - 3 5.5 A RM F R F current T = 100 °C; Fig. 5 j V forward recovery voltage I = 10 A; dI /dt = 100 A/μs; - 3.2 - V FR F F T = 25 °C; Fig. 6 j 003aac232 15 dlF IF dt IF (A) trr 10 time 10 % (1) (2) (3) 5 Qr 100 % IR IRM 001aab911 0 0 0.4 0.8 1.2 1.6 VF (V) (1) T = 150 °C; typical values Fig. 5. Reverse recovery definitions; ramp recovery j (2) T = 150 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 4. Forward current as a function of forward voltage BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 5 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast IF time VF VFRM VF time 001aab912 Fig. 6. Forward recovery definitions BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 6 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 12. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 `full pack' SOD113 A E A1 P z(2) q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 2 b1 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit A A1 b b1 c D E e mHaEx j(3) k(3) L L1(1) mLa2x m P Q q T(4) w z(2) max 4.6 2.9 0.9 1.1 0.7 15.8 10.3 2.7 0.6 14.4 3.3 6.5 3.2 2.6 mm nom 5.08 19.0 0.5 2.6 2.55 0.4 0.8 min 4.0 2.5 0.7 0.9 0.4 15.2 9.7 1.7 0.4 13.5 2.8 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. sod113_po Outline References European Issue date version IEC JEDEC JEITA projection 07-06-08 SOD113 2-lead TO-220F 15-08-28 BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 7 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 13. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV25X-600 v.2 20180130 Product data sheet - BYV25X-600_1 Modifications: Change from NXP version to WeEn version BYV25X-600_1 20080812 Product data sheet - - BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 8 / 11

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Limiting values are stress ratings only and (proper) relevant full data sheet, which is available on request via the local WeEn operation of the device at these or any other conditions above those Semiconductors sales office. In case of any inconsistency or conflict with the given in the Recommended operating conditions section (if present) or the short data sheet, the full data sheet shall prevail. Characteristics sections of this document is not warranted. Constant or Product specification — The information and data provided in a Product repeated exposure to limiting values will permanently and irreversibly affect data sheet shall define the specification of the product as agreed between the quality and reliability of the device. WeEn Semiconductors and its customer, unless WeEn Semiconductors and No offer to sell or license — Nothing in this document may be interpreted customer have explicitly agreed otherwise in writing. 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BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 9 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 10 / 11

WeEn Semiconductors BYV25X-600 Rectifier diode, ultrafast 15. Contents 1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................4 10. Isolation characteristics .............................................4 11. Characteristics .............................................................5 12. Package outline ...........................................................7 13. Revision history...........................................................8 14. Legal information ........................................................9 15. Contents .....................................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 30 January 2018 BYV25X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 11 / 11