BYQ28E-200 Rectifier diodes ultrafast, rugged Rev.05 - 7 March 2018 Product data sheet 1. General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) plastic package. 2. Features and benefits • Fast switching • Low thermal resistance • Soft recovery characteristic • Low forward voltage drop • Reverse surge capability • High thermal cycling performance 3. Applications • Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current δ = 0.5; square-wave pulse; T ≤ 119 °C; 10 A O(AV) mb both diodes conducting; Fig. 5; Fig. 6 I repetitive peak forward δ = 0.5; t = 25 μs; T ≤ 119 °C; 10 A FRM p mb current square-wave pulse; per diode I non-repetitive peak t = 10 ms; sine-wave pulse; per diode 50 A FSM p forward current t = 8.3 ms; sine-wave pulse; per diode 55 A p Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A; T = 25 °C; Fig. 2 - 0.95 1.1 V F F j I = 5 A; T = 150 °C; Fig. 2 - 0.8 0.895 V F j I = 10 A; T = 25 °C; Fig. 2 - 1.1 1.25 V F j Dynamic characteristics t reverse recovery time ramp recovery; I = 1 A; V = 30 V; - 15 25 ns rr F R dI /dt = 100 A/μs; T = 25 °C; Fig. 3 F j step recovery; when switched from - 10 20 ns I = 0.5 A to I = 1 A; measured at F R I = 0.25 A R

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode 3 A2 anode 2 A1 A2 mb K mounting base; connected to K cathode sym125 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYQ28E-200 TO-220AB plastic single-ended package; heatsink mounted; SOT78 1 mounting hole; 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking codes BYQ28E-200 BYQ28E-200 BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 2 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V repetitive peak reverse 200 V RRM voltage V crest working reverse 200 V RWM voltage V reverse voltage δ = 1.0; square-wave pulse 200 V R I average output current δ = 0.5; square-wave pulse; T ≤ 119 °C; 10 A O(AV) mb both diodes conducting; Fig. 5; Fig. 6 I repetitive peak forward δ = 0.5; t = 25 μs; T ≤ 119 °C; 10 A FRM p mb current square-wave pulse; per diode I non-repetitive peak t = 10 ms; sine-wave pulse; per diode 50 A FSM p forward current t = 8.3 ms; sine-wave pulse; per diode 55 A p I peak reverse recovery δ = 0.001; t = 2 μs 0.2 A RM p current I non-repetitive peak t = 100 μs 0.2 A RSM p reverse current T storage temperature -40 to 150 °C stg T junction temperature 150 °C j Electrostatic discharge V electrostatic discharge all pins; human body model; 8 kV ESD voltage C = 250 pF; R = 1.5 kΩ BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 3 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance with heatsink compound; - - 3 K/W th(j-mb) from junction to both diodes conducting mounting base with heatsink compound; - - 4.5 K/W per diode; Fig 1 R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient Fig. 1. Transient thermal impedance from junction to mounting base as a function of pulse width BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 4 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A; T = 150 °C; Fig. 2 - 0.8 0.895 V F F j I = 5 A; T = 25 °C; Fig. 2 - 0.95 1.1 V F j I = 10 A; T = 25 °C; Fig. 2 - 1.1 1.25 V F j I reverse current V = 200 V - 2 10 μA R R V = 200 V; T = 100 °C - 0.1 0.2 mA R j Dynamic characteristics Q recovered charge I = 2 A; V = 30 V; dI /dt = 20 A/μs; - 4 9 nC r F R F T = 25 °C; Fig. 3 j t reverse recovery time ramp recovery; I = 1 A; V = 30 V; - 15 25 ns rr F R dI /dt = 100 A/μs; T = 25 °C; Fig. 3 F j step recovery; when switched from - 10 20 ns I = 0.5 A to I = 1 A; measured at F R I = 0.25 A R I peak reverse recovery I = 5 A; V = 30 V; dI /dt = 50 A/μs; - 0.5 0.7 A RM F R F current T = 25 °C; Fig. 3 j V forward recovery voltage I = 1 A; dI /dt = 10 A/μs; - 1 - V FR F F T = 25 °C; Fig. 4 j (1) T = 150 °C; typical values j (2) T = 150 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 2. Forward current as a function of forward voltage BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 5 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged dlF IF IF dt trr time time 25 % VF Qr 100 % VFRM IR IRM VF 003aac562 time 001aab912 Fig. 3. Reverse recovery definitions; ramp recovery Fig. 4. Forward recovery definitions I = I × √δ a = form factor = I / I F(AV) F(RMS) F(RMS) F(AV) Fig. 5. Forward power dissipation as a function of Fig. 6. Forward power dissipation as a function of average forward current; square waveform; average forward current; sinusoidal waveform; maximum values; per diode maximum values; per diode BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 6 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-lead TO-220AB SC-46 08-06-13 BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 7 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 12. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BYQ28E-200 v.5 20180307 Product data sheet - BYQ28_SER_E_ED_4 Modifications: Change from NXP version to WeEn version BYQ28_SER_E_ED_4 20071205 Product data sheet - BYQ28E_SERIES_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Limiting values table: some parameter descriptions amended to conform to latest standards; IFRM conditions amended; VESD row added. • Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with ‘ramp recovery’ and ‘step recovery’ added to conditions. BYQ28E_SERIES_3 19981001 Product specification - BYQ28E_SERIES_2 BYQ28E_SERIES_2 19980701 Product specification - BYQ28E_SERIES_1; BYQ28EB_SERIES_1 BYQ28E_SERIES_1; 19960801 Product specification - - BYQ28EB_SERIES_1 BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 8 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 13. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 9 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 10 / 11

WeEn Semiconductors BYQ28E-200 Rectifier diodes ultrafast, rugged 14. Contents 1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................4 10. Characteristics.............................................................5 11. Package outline ...........................................................7 12. Revision history...........................................................8 13. Legal information ........................................................9 14. Contents .....................................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 7 March 2018 BYQ28E-200 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 March 2018 11 / 11