BY251P, BY252P, BY253P, BY254P, BY255P www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, I less than 0.1 μA R • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of DO-201AD compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, PRIMARY CHARACTERISTICS inverters, converters, and freewheeling diodes application. I 3.0 A F(AV) Note V 200 V, 400 V, 600 V, 800 V,1300 V • These devices are not AEC-Q101 qualified. RRM I 150 A FSM MECHANICAL DATA I 5.0 μA R Case: DO-201AD, molded epoxy body V 1.1 V F Molding compound meets UL 94 V-0 flammability rating T max. 150 °C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD Terminals: Matte tin plated leads, solderable per Diode variations Single die J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT Maximum repetitive peak reverse voltage V 200 400 600 800 1300 V RRM Maximum RMS voltage V 140 280 420 560 910 V RMS Maximum DC blocking voltage V 200 400 600 800 1300 V DC Maximum average forward rectified current I 3.0 A 10 mm lead length F(AV) Peak forward surge current 10 ms single half I 150 A sine-wave superimposed on rated load FSM Maximum full load reverse current, full cycle average I 100 μA 10 mm lead length R(AV) Operating junction and storage temperature range T , T - 55 to + 150 °C J STG ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT Maximum instantaneous 3.0 A V 1.1 V forward voltage F Maximum reverse current T = 25 °C I 5.0 μA at rated DC blocking voltage A R Maximum reverse IF = 0.5 A, IR = 1.0 V, t 3.0 μs recovery time I = 0.25 A rr rr Typical junction capacitance 4.0 V, 1 MHz C 40 pF J Revision: 01-Aug-13 1 Document Number: 88838 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BY251P, BY252P, BY253P, BY254P, BY255P www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT R (1) 20 JA Typical thermal resistance °C/W R (1) 10 JL Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BY253P-E3/54 1.1 54 1400 13" diameter paper tape and reel BY253P-E3/73 1.1 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 4.0 10 )A t (nreur 3.0 o6r 0In Hdzu cRtievsei sLtiovaed akage TJ = 125 °C C e d efitiecRd rwa 2.0 eous Reverse LCurrent (μA) 0.11 TJ = 75 °C roFe ag 1.0 stantan TJ = 25 °C rve 10 mm Lead Length In A 0 0.01 0 25 50 75 100 125 150 175 0 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current 1000 100 8.3 ms Single Half Sine-Wave nt (A) ent (A) Pul1s e%T WJ D i=du t2thy5 = C° Cy3c0l0e μs urre Curr 10 Surge C 100 orward ard TA = 55 °C us F w o 1 or ne F a Peak stant n I 0 0.1 1 10 100 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Number of Cycles at 60 Hz Instantaneous Forward Voltage (V) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 4 - Typical Instantaneous Forward Characteristics Revision: 01-Aug-13 2 Document Number: 88838 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BY251P, BY252P, BY253P, BY254P, BY255P www.vishay.com Vishay General Semiconductor  100  T = 25 °C  J f = 1.0 MHz  )Fp Vsig = 50 mVp-p  ( e c  n atic  ap  a C  n o  itc n  u J   10  1 10 100  Reverse Voltage (V)  Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 01-Aug-13 3 Document Number: 88838 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: BY251P-E3/54 BY252P-E3/54 BY253P-E3/51 BY253P-E3/54 BY254P-E3/54 BY254P-E3/73 BY255P-E3/51 BY255P-E3/54 BY255P-E3/73 BY251P-E3/73