BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application SUPERECTIFIER® • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, I less than 0.1 μA R • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-201AD • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for both PRIMARY CHARACTERISTICS consumer and automotive applications. I 3.0 A F(AV) MECHANICAL DATA V 200 V to 1300 V RRM Case: DO-201AD, molded epoxy over glass body IFSM 100 A Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade I 5.0 μA R Base P/NHE3 - RoHS compliant, AEC-Q101 qualified V 1.1 V F Terminals: Matte tin plated leads, solderable per TJ max. 175 °C J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25°C unless otherwise noted) A PARAMETER SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT Maximum non repetitive peak reverse voltage V 220 440 660 880 1430 V RSM Maximum repetitive peak reverse voltage V 200 400 600 800 1300 V RRM Maximum RMS voltage V 140 280 420 560 910 V RMS Maximum DC blocking voltage V 200 400 600 800 1300 V DC Maximum average forward rectified current 10 mm lead I 3.0 A length at T = 55 °C F(AV) A Peak forward surge current 10 ms single half sine-wave I 100 A superimposed on rated load FSM Maximum full load reverse current, full cycle average I 100 μA 10 mm lead length at T = 55 °C R(AV) A Operating junction and storage temperature range T , T - 65 to + 175 °C J STG Document Number: 88541 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BY251GP thru BY255GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT Maximum instantaneous 3.0 A V 1.1 V forward voltage F Maximum reverse current at T = 25 °C I 5.0 μA rated DC blocking voltage A R I = 0.5 A, I = 1.0 V, Maximum reverse recovery time F R t 3.0 μs I = 0.25 A rr rr Typical junction capacitance 4.0 V, 1 MHz C 40 pF J THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP UNIT R (1) 20 JA Typical thermal resistance °C/W R (1) 10 JL Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BY253GP-E3/54 1.28 54 1400 13" diameter paper tape and reel BY253GP-E3/73 1.28 73 1000 Ammo pack packaging BY253GPHE3/54 (1) 1.28 54 1400 13" diameter paper tape and reel BY253GPHE3/73 (1) 1.28 73 1000 Ammo pack packaging Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 4.0 1000 )At (n o6r 0In Hdzu cRtievsei sLtiovaed A) 10 ms SiTnJg =le THJ aMlf aSxi.ne-Wave reurCd e 3.0 Current ( fitiecR 2.0 Surge 100 d d ra ar w w ro or F 1.0 F e k g a a e re 10 mm Lead Length P v A 0 10 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88541 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BY251GP thru BY255GP Vishay General Semiconductor 10 100 T = 25 °C ge TJ = 125 °C f =J 1.0 MHz aka )Fp Vsig = 50 mVp-p Le ( e ous Reverse Current (μA) 1 TJ = 75 °C cnaticapaC n stantane 0.1 TJ = 25 °C oitcnuJ n I 0.01 10 0 20 40 60 80 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 A) urrent ( PulseT WJ i=d t2h5 = ° C300 μs C 10 1 % Duty Cycle d ar w or F s u o 1 e n a nt a st n I 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88541 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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