BUZ 32 H SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type V I R Package Pb-free DS D DS(on) Ω BUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 29 ˚C 9.5 C Pulsed drain current I Dpuls T = 25 ˚C 38 C Avalanche current,limited by T I 9.5 jmax AR Avalanche energy,periodic limited by T E 6.5 mJ jmax AR Avalanche energy, single pulse E AS Ω I = 9.5 A, V = 50 V, R = 25 D DD GS L = 2 mH, T = 25 ˚C 120 j ± Gate source voltage V 20 V GS Power dissipation P W tot T = 25 ˚C 75 C Operating temperature T -55 ... + 150 ˚C j Storage temperature T -55 ... + 150 stg ≤ Thermal resistance, chip case R 1.67 K/W thJC Thermal resistance, chip to ambient R 75 thJA DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Rev. 2.4 Page 1 2009-11-10

BUZ 32 H Electrical Characteristics, at T= 25˚C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 25 ˚C 200 - - GS D j Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA 2.1 3 4 Zero gate voltage drain current I µA DSS V = 200 V, V = 0 V, T = 25 ˚C - 0.1 1 DS GS j V = 200 V, V = 0 V, T = 125 ˚C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Ω Drain-Source on-resistance R DS(on) V = 10 V, I = 6 A - 0.3 0.4 GS D Rev. 2.4 Page 2 2009-11-10

BUZ 32 H Electrical Characteristics, at T= 25˚C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance g S fs ≥ VDS 2 * ID * RDS(on)max, ID = 6 A 3 4.6 - Input capacitance C pF iss V = 0 V, V = 25 V, f = 1 MHz - 400 530 GS DS Output capacitance C oss V = 0 V, V = 25 V, f = 1 MHz - 85 130 GS DS Reverse transfer capacitance C rss V = 0 V, V = 25 V, f = 1 MHz - 45 70 GS DS Turn-on delay time t ns d(on) V = 30 V, V = 10 V, I = 3 A DD GS D Ω R = 50 - 10 15 GS Rise time t r V = 30 V, V = 10 V, I = 3 A DD GS D Ω R = 50 - 40 60 GS Turn-off delay time t d(off) V = 30 V, V = 10 V, I = 3 A DD GS D Ω R = 50 - 55 75 GS Fall time t f V = 30 V, V = 10 V, I = 3 A DD GS D Ω R = 50 - 30 40 GS Rev. 2.4 Page 3 2009-11-10

BUZ 32 H Electrical Characteristics, at T= 25˚C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current I A S T = 25 ˚C - - 9.5 C Inverse diode direct current,pulsed I SM T = 25 ˚C - - 38 C Inverse diode forward voltage V V SD V = 0 V, I = 19 A - 1.4 1.7 GS F Reverse recovery time t ns rr VR = 100 V, IF=lS, diF/dt = 100 A/µs - 200 - Reverse recovery charge Q µC rr VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.6 - Rev. 2.4 Page 4 2009-11-10

BUZ 32 H Drain current Power dissipation ƒ ƒ I = (T ) P = (T ) D C tot C ≥ parameter: V 10 V GS 10 80 A W I 8 P D tot 60 7 50 6 5 40 4 30 3 20 2 10 1 0 0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 T T C C Safe operating area Transient thermal impedanc e I = ƒ(V ) Z = ƒ(t) D DS th JC p parameter: D = 0.01, T = 25˚C parameter: D = t / T C p 10 2 10 1 tp = 7 .6 µ s K/W A 10 µs ID 10 1 R D S ( o n ) = V D S / I D 100 µs ZthJC 10 0 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 -3 10 0 10 1 10 2 V 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0 V t DS p Rev. 2.4 Page 5 2009-11-10

BUZ 32 H Typ. output characteristic s Typ. drain-source on-resistanc e I = ƒ(V ) R = ƒ(I ) D DS DS (on) D parameter: t = 80 µs parameter: V p GS 22 1.3 Ptot = 75W Ω A l k j a b c d e f g h i 18 VGS [V] 1.1 ID h a 4.0 RDS (on) 1.0 b 4.5 16 c 5.0 0.9 g 14 d 5.5 0.8 e 6.0 f 12 f 6.5 0.7 g 7.0 10 e h 7.5 0.6 i 8.0 0.5 8 j 9.0 d k 10.0 0.4 i 6 j l 20.0 c 0.3 k 4 0.2 b VVGGSS [[VV]] == 2 0.1 aa b c d e f g h i j k a 44..50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0 0.0 0 2 4 6 8 10 12 V 16 0 4 8 12 16 A 22 V I DS D Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 13 6.0 A S 11 5.0 ID 10 gfs 4.5 9 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 2 1.0 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 A 12 V I GS D Rev. 2.4 Page 6 2009-11-10

BUZ 32 H Gate threshold voltage Drain-source on-resistanc e ƒ ƒ V = (T) R = (T) GS (th) j DS (on) j parameter: V = V , I = 1 mA parameter: I = 6 A, V = 10 V GS DS D D GS 1.3 4.6 Ω V 98% 4.0 1.1 V R GS(th) 3.6 DS (on)1.0 0.9 3.2 typ 0.8 2.8 0.7 2.4 2% 0.6 98% 2.0 0.5 1.6 typ 0.4 1.2 0.3 0.8 0.2 0.4 0.1 0.0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C 160 T Tj j Typ. capacitances Forward characteristics of reverse dio de C = f (VDS) I = ƒ(V ) F SD parameter:VGS = 0V, f = 1MHz parameter: Tj, tp = 80 µs 10 1 10 2 nF A C I F 10 0 10 1 C iss 10 -1 10 0 C T = 25 ˚C typ oss j T = 150 ˚C typ C j rss T = 25 ˚C (98%) j T = 150 ˚C (98%) j 10 -2 10 -1 0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V V DS SD Rev. 2.4 Page 7 2009-11-10

BUZ 32 H ƒ Avalanche energy E = (T) Typ. gate charge AS j parameter: I = 9.5 A, V = 50 V V = ƒ(Q ) D DD GS Gate Ω R = 25 , L = 2 mH parameter: I = 14 A GS D puls 130 16 mJ V 110 E V AS 100 GS 12 90 80 10 0,2 V 0,8 V DS max DS max 70 8 60 50 6 40 4 30 20 2 10 0 0 20 40 60 80 100 120 ˚C 160 0 4 8 12 16 20 24 28 32 nC 38 T Q j Gate Drain-source breakdown voltage ƒ V = (T) (BR)DSS j 240 V 230 V (BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 T j Rev. 2.4 Page 8 2009-11-10

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