BUTW92 ® HIGH CURRENT NPN SILICON TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR APPLICATIONS: n MOTOR CONTROL n HIGH FREQUENCY AND EFFICIENCY CONVERTERS 3 DESCRIPTION 2 1 High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 500 V VCEO Collector-Emitter Voltage (IB = 0) 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IE Emitter-Current 60 A IEM Emitter Peak Current (tp < 5ms) 70 A IB Base Current 15 A IBM Base Peak Current (tp < 5ms) 18 A Ptot Total Dissipation at Tc £ 25 oC 180 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC September 2001 1/4

BUTW92 THERMAL DATA Rthj-case Thermal Resistance Junction-case MAX 0.7 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off VCE = 450 V 50 m A Current (VBE = -1.5V) VCE = 450 V TC = 100oC 1 mA IEBO Emitter Cut-off Current VEB = 5 V 50 m A (IC = 0) VCES Collector-Emitter IC = 5 mA 500 V Voltage (VEB =0) VEBO Emitter-Base Voltage IE = 50 mA 7 V (IC = 0) VCEO(sus)* Collector-Emitter IC = 200 mA 250 V Sustaining Voltage (IB=0) VCE(sat)* Collector-Emitter IC = 60 A IB = 15 A 0.8 1 V Saturation Voltage IC = 60 A IB = 15 A TC = 100oC 1.1 1.5 V VBE(sat)* Base-Emitter IC = 60 A IB = 15 A 1.9 V Saturation Voltage IC = 60 A IB = 15 A TC = 100oC 2 V hFE* DC Current Gain IC = 60 A VCE = 3 V 9 IC = 60 A VCE = 3 V TC = 100oC 6 IC = 5 A VCE = 3 V 65 RESISTIVE LOAD ts Storage Time IC = 50 A VCC = 250 V 1.2 1.4 m s tf Fall Time IB1 = -IB2 = 10 A 250 300 ns * Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2/4

BUTW92 TO-247 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 3/4

BUTW92 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4