BUL510 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY ) s n LOW SPREAD OF DYNAMIC PARAMETERS ( n VERY HIGH SWITCHING SPEED ct n FULLY CHARACTERIZED AT 125oC u d o APPLICATIONS 3 r n ELECTRONIC BALLASTS FOR P 1 2 FLUORESCENT LIGHTING e n SWITCH MODE POWER SUPPLIES t e TO-220 n ELECTRONIC TRANSFORMER FOR l o HALOGEN LAMP s b DESCRIPTION O The BUL510 is manufactured using high voltag e - Multiepitaxial Mesa technology for cost-effe ctive ) high performance. It uses a Hollow sEmitter INTERNAL SCHEMATIC DIAGRAM ( structure to enhance switching speedts. c The BUL series is designed four use in lighting applications and low cost sdwitch-mode power o supplies. r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBOEmitter-Base Voltage (I C = 0) 9 V IC Collector Current 10 A ICM Collector Peak Current (tp < 5 ms) 18 A IB Base Current 3.5 A IBM Base Peak Current (tp < 5 ms) 7 A Ptot Total Dissipation at Tc = 25 oC 100 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC February 2003 1/6

BUL510 THERMAL DATA Rthj-case Thermal Resistance Junction-Case Max 1.25 oC/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 oC/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off VCE = 1000 V 100 m A Current (VBE = 0) VCE = 1000 V Tc = 125 oC 500 m A ICEO Collector Cut-off VCE = 450 V 250 m A Current (IB = 0) ) VCEO(sus)* Collector-Emitter IC = 100 mA L = 25 mH 450 ( s V Sustaining Voltage t c (IB = 0) u VEBO Emitter-Base Voltage IE = 10 mA 9 d V (IC = 0) o r VCE(sat)* Collector-Emitter IC = 3 A IB = 0.6 A P 0.8 V Saturation Voltage IC = 4 A IB = 0.8 A e 1 V IC = 5 A IB = 1.25 A t 1.5 V e VBE(sat)* Base-Emitter IC = 3 A IB = 0.6 Al 1.2 V o Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V s hFE* DC Current Gain IC = 1 A VCbE = 5 V 15 45 IC = 10 mA O VCE = 5 V 10 INDUCTIVE LOAD IC = 4 A - VCL = 300 V ts Storage Time IB1 = 0.8) A IB2 = -1.6 A 2.2 3.4 m s tf Fall Time L = 20s0 m H 80 150 ns ( t INDUCTIVE LOAD cIC = 4 A VCL = 300 V ts Storage Time u IB1 = 0.8 A IB2 = -1.6 A 3 m s tf Fall Time d L = 200 m H Tc = 125 oC 120 ns * Pulsed: Pulse duration = 300 m s, douty cycle 1.5 % r P e t e l o s b O Safe Operating Areas Derating Curve 2/6

BUL510 DC Current Gain DC Current Gain ) s ( t c u d o r P e Collector Emitter Saturation Voltage Base Emitter Saturation Voltage t e l o s b O - ) s ( t c u d o r P e t e l o s b O Inductive Fall Time Inductive Storage Time 3/6

BUL510 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits ) s ( t c u (1) Fast electronic switch d (2) Non-inductive Resistor o (3) Fast recovery rectifier r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 4/6

BUL510 TO-220 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 ) F1 1.14 1.70 0.044 0.0s67 ( F2 1.14 1.70 0.044 t0.067 c G 4.95 5.15 0.194 u 0.202 G1 2.40 2.70 0.094 d 0.106 o H2 10.00 10.40 0.394 0.409 r P L2 16.40 0.645 L4 13.00 14.00 0.511 e 0.551 t L5 2.65 2.95 0.e104 0.116 L6 15.25 15.75 ol0.600 0.620 L7 6.20 6.60 s 0.244 0.260 b L9 3.50 3.9O3 0.137 0.154 M 2.60 0.102 - DIA. 3.75 3.85 0.147 0.151 ) s ( t c u d o r P e t e l o s b O P011CI 5/6

BUL510 ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6