BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES Figure 1: Package TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED n INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE 3 2 1 APPLICATIONS TO-220 n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE Figure 2: Internal Schematic Diagram TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number Marking Package Packaging BUL128D-B BUL128D-B TO-220 Tube Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage V(BR)EBO V (I = 0, I = 2 A, t < 10 µs, T = 150 oC) C B p J IC Collector Current 4 A ICM Collector Peak Current (tp < 5ms) 8 A IB Base Current 2 A IBM Base Peak Current (tp < 5ms) 4 A Rev. 2 February 2005 1/8

BUL128D-B Symbol Parameter Value Unit Ptot Total Dissipation at TC = 25 oC 70 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.78 oC/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 oC/W Table 4: Electrical Characteristics (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 700 V 100 µA CES CE (VBE = 0 V) V =700 V T = 125 oC 500 µA CE j I Collector Cut-off Current V = 400 V 250 µA CEO CE (I = 0) B V Emitter-Base I = 10 mA 9 18 V (BR)EBO E Breakdown Voltage (I = 0 ) C V * Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage (I = 0 ) B V * Collector-Emitter I = 0.5 A I = 0.1 A 0.7 V CE(sat) C B Saturation Voltage I = 1 A I = 0.2 A 1 V C B 1.5 V I = 2.5 A I = 0.5 A C B 0.5 V I = 4 A I = 1 A C B V * Base-Emitter Saturation I = 0.5 A I = 0.1 A 1.1 V BE(sat) C B Voltage I = 1 A I = 0.2 A 1.2 V C B 1.3 V I = 2.5 A I = 0.5 A C B h * DC Current Gain I = 10 mA V = 5 V 10 FE C CE I = 2 A V = 5 V 12 32 C CE RESISTIVE LOAD V =200 V I = 2 A CC C ts Storage Time IB1 = 0.4 A VBE(off) = -5 V 0.6 µs tf Fall Time RBB = 0 W L = 200 µH 0.1 µs (see figure 15) INDUCTIVE LOAD V =250 V I = 2 A CC C ts Storage Time IB1 = 0.4 A IB2 = -0.4 A 2 2.9 µs tf Fall Time Tp = 30 µs (see figure 14) 0.2 µs * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. . 2/8

BUL128D-B Figure 3: Safe Operating Area Figure 6: Derating Current Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage 3/8

BUL128D-B Figure 9: Inductive Load Fall Time Figure 12: Inductive Load Stoarage Time Figure 10: Resistive Load Fall Time Figure 13: Resistive Load Stoarage Time Figure 11: Reverse Biased Operating Area 4/8

BUL128D-B Figure 14: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 15: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 5/8

BUL128D-B TO-220 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 6/8

BUL128D-B Table 5: Version Release Date Change Designator 01-Oct-2002 1 First Release. 15-Feb-2005 1 Added table 1 on page 1. 7/8

BUL128D-B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005STMicroelectronics-AllRightsReserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8