BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 7 January 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with V rating of greater than 0.5 V at 175 °C GS(th) 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 °C ≤ T ≤ 175 °C - - 60 V DS j ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [1] - - 100 A P total power dissipation T = 25 °C; Fig. 1 - - 238 W tot mb Static characteristics R drain-source on-state V = 5 V; I = 25 A; T = 25 °C; Fig. 11 - 3.3 4.8 mΩ DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 25 A; V = 48 V; V = 5 V; - 18.1 - nC GD D DS GS T = 25 °C; Fig. 13; Fig. 14 j [1] Continuous current is limited by package.

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base; connected to LFPAK56; Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y4R8-60E LFPAK56; Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56; Power-SO8); 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y4R8-60E 94E860 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 °C ≤ T ≤ 175 °C - 60 V DS j V drain-gate voltage R = 20 kΩ - 60 V DGR GS V gate-source voltage DC; T ≤ 175 °C -10 10 V GS j Pulsed; Tj ≤ 175 °C [1][2] -15 15 V P total power dissipation T = 25 °C; Fig. 1 - 238 W tot mb ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [3] - 100 A VGS = 5 V; Tmb = 100 °C; Fig. 2 [3] - 100 A I peak drain current pulsed; t ≤ 10 µs; T = 25 °C; Fig. 3 - 593 A DM p mb BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 2 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode IS source current Tmb = 25 °C [3] - 100 A I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 593 A SM p mb Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; [4][5] - 199 mJ avalanche energy V = 5 V; T = 25 °C; unclamped; GS j(init) Fig. 4 [1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Refer to application note AN10273 for further information. 03aa16 003aaj140 120 200 ID Pder (A) (%) 150 80 100 (1) 40 50 0 0 0 50 100 150 200 0 50 100 150 200 Tmb(°C) Tmb(°C) (1) Capped at 100A due to package Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. Continuous drain current as a function of mounting base temperature BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 3 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 103 003aaj142 ID LimitRDSon=VDS/ID (A) tp=10µs 102 100µs 10 1ms DC 10ms 1 100ms 10-1 10-1 1 10 102 103 VDS(V) Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 103 003aaj141 IAL (A) 102 (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 10 tAL(ms) Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - - 0.63 K/W th(j-mb) from junction to mounting base BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 4 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 003aai463 1 ZZtthh((jj--mmbb)) ((KK//WW)) δδ == 00..55 00..22 10-1 00..11 00..0055 00..0022 10-2 ssiinnggllee sshhoott P δ = tp T tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 60 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 54 - - V D GS j V gate-source threshold I = 1 mA; V =V ; T = 25 °C; Fig. 9; 1.4 1.7 2.1 V GS(th) D DS GS j voltage Fig. 10 I = 1 mA; V =V ; T = -55 °C; Fig. 9 - - 2.45 V D DS GS j I = 1 mA; V =V ; T = 175 °C; Fig. 9 0.5 - - V D DS GS j I drain leakage current V = 60 V; V = 0 V; T = 25 °C - 0.12 10 µA DSS DS GS j V = 60 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 10 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -10 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 5 V; I = 25 A; T = 25 °C; Fig. 11 - 3.3 4.8 mΩ DSon GS D j resistance V = 10 V; I = 25 A; T = 25 °C; - 2.9 4.1 mΩ GS D j Fig. 11 V = 5 V; I = 25 A; T = 175 °C; - - 10.8 mΩ GS D j Fig. 11; Fig. 12 Dynamic characteristics Q total gate charge I = 25 A; V = 48 V; V = 5 V; - 54.8 - nC G(tot) D DS GS T = 25 °C; Fig. 13; Fig. 14 Q gate-source charge j - 13.6 - nC GS Q gate-drain charge - 18.1 - nC GD BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 5 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit C input capacitance V = 25 V; V = 0 V; f = 1 MHz; - 5890 7853 pF iss DS GS T = 25 °C; Fig. 15 C output capacitance j - 506 607 pF oss C reverse transfer - 276 378 pF rss capacitance t turn-on delay time V = 45 V; R = 1.8 Ω; V = 5 V; - 28 - ns d(on) DS L GS R = 5 Ω; T = 25 °C t rise time G(ext) j - 53 - ns r t turn-off delay time - 80 - ns d(off) t fall time - 47 - ns f Source-drain diode V source-drain voltage I = 25 A; V = 0 V; T = 25 °C; Fig. 16 - 0.78 1.2 V SD S GS j t reverse recovery time I = 20 A; dI /dt = -100 A/µs; V = 0 V; - 29 - ns rr S S GS V = 25 V; T = 25 °C Q recovered charge DS j - 28 - nC r 003aaj144 003aaj145 360 10 R ID VGS(V)=10 4.5 (mDΩSo)n (A) 3.5 7.5 240 5 3 120 2.5 2.8 2.6 2.4 0 0 0 2 V (V) 4 0 2.5 5 7.5 V (V)10 DS GS T = 25 °C; t = 300 μs j p Fig. 7. Drain-source on-state resistance as a function Fig. 6. Output characteristics; drain current as a of gate-source voltage; typical values function of drain-source voltage; typical values BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 6 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 003aaj147 003aah025 240 3 VGS(th) (V) I D 2.5 (A) max 160 2 typ 1.5 min 80 1 0.5 T =175°C T =25°C j j 0 0 0 1 2 3 4 -60 0 60 120 180 VGS(V) Tj(°C) Fig. 8. Transfer characteristics; drain current as a Fig. 9. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 10-1 003aah026 15 003aaj150 ID (A) RDSon 10-2 (mΩ) 2.6 2.8 3 10 10-3 min typ max 3.5 10-4 4.5 5 10-5 VGS(V)=10 10-6 0 0 1 2 3 0 80 160 240 I (A) VGS(V) D T = 25 °C; t = 300 μs Fig. 10. Sub-threshold drain current as a function of j p gate-source voltage Fig. 11. Drain-source on-state resistance as a function of drain current; typical values BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 7 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 003aaj816 2.4 VDS a ID 1.6 VGS(pl) VGS(th) VGS 0.8 QGS2 QGS1 QGS QGD QG(tot) 003aaa508 0 Fig. 13. Gate charge waveform definitions -60 0 60 120 180 Tj(°C) Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 10 003aaj152 104 003aaj153 V GS (V) C Ciss (pF) 8 6 V =14V DS 103 V =48V DS 4 C oss 2 C rss 0 102 0 40 80 120 10-1 1 10 102 QG(nC) VDS(V) Fig. 14. Gate-source voltage as a function of gate Fig. 15. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 8 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 003aaj154 360 I S (A) 240 Tj=175°C 120 Tj=25°C 0 0 0.3 0.6 0.9 1.2 V (V) SD Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 9 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A2 C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w A c 1/2 e A (A3) A1 C q L detail X y C 0 5 mm θ scale 8° 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3 mm nom 0.25 1.27 0.25 0.1 min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po Outline References European Issue date version IEC JEDEC JEITA projection 11-03-25 SOT669 MO-235 13-02-27 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 10 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. 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Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 12 / 13

Nexperia BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 07 January 2016 BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 7 January 2016 13 / 13