BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features (cid:132) 175 °C rated (cid:132) Logic level compatible (cid:132) Q101 compliant (cid:132) Very low on-state resistance 1.3 Applications (cid:132) 12 V and 24 V loads (cid:132) Automotive systems (cid:132) General purpose power switching (cid:132) Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I drain current V =5V; T =25°C; - - 26 A D GS mb seeFigure1 and 4 P total power dissipation T =25°C; seeFigure2 - - 59 W tot mb Static characteristics R drain-source on-state V =5V; I =15A; - 34 40 mΩ DSon GS D resistance T =25°C; seeFigure12 and j 13 Avalanche ruggedness E non-repetitive I =26A; V ≤55V; - - 36 mJ DS(AL)S D sup drain-source avalanche R =50Ω; V =5V; GS GS energy T =25°C; unclamped j(init)

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mbb076 S mb D mounting base; 1 2 3 4 connected to drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK9Y40-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 55 V DS j j V drain-gate voltage R =20kΩ - 55 V DGR GS V gate-source voltage -15 15 V GS I drain current T =100°C; V =5V; seeFigure1 - 18 A D mb GS T =25°C; V =5V; seeFigure1 and 4 - 26 A mb GS I peak drain current T =25°C; t ≤10μs; pulsed; seeFigure4 - 106 A DM mb p P total power dissipation T =25°C; seeFigure2 - 59 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Avalanche ruggedness E non-repetitive I =26A; V ≤55V; R =50Ω; V =5V; - 36 mJ DS(AL)S D sup GS GS drain-source avalanche T =25°C; unclamped j(init) energy E repetitive drain-source seeFigure3 [1][2] - - J DS(AL)R avalanche energy [3] Source-drain diode I source current T =25°C - 26 A S mb I peak source current t ≤10μs; pulsed; T =25°C - 106 A SM p mb [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 2 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 30 03nn93 120 03na19 ID Pder (A) (%) 20 80 10 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) VGS(cid:149)5V P = Ptot ×100% der Ptot(25°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 102 03np80 IAV (A) (1) 10 (2) 1 (3) 10−1 10−2 10−3 10−2 10−1 1 10 tAV (ms) (1)Single(cid:237)pulse;T =25°C. j (2)Single(cid:237)pulse;T =150°C. j (3)Repetitive. Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 3 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 103 03nn94 I D (A) Limit R = V / I DSon DS D 102 tp = 10 μs 10 100 μs 1 1 ms 10 ms 100 ms DC 10-1 1 10 V (V) 102 DS T =25°C;I issinglepulse mb DM Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance seeFigure5 - - 2.5 K/W th(j-mb) from junction to mounting base 03nn95 10 Z th (j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 P δ = Ttp 0.02 single shot tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 4 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; 55 - - V (BR)DSS D GS breakdown voltage T =25°C j I =0.25mA; V =0V; 50 - - V D GS T =-55°C j V gate-source threshold I =1mA; V = V ; 0.5 - - V GS(th) D DS GS voltage T =175°C; seeFigure11 j I =1mA; V = V ; T =25°C; 1.1 1.5 2 V D DS GS j seeFigure11 I =1mA; V = V ; - - 2.3 V D DS GS T =-55°C; seeFigure11 j I drain leakage current V =55V; V =0V; T =25°C - 0.02 1 μA DSS DS GS j V =55V; V =0V; - - 500 μA DS GS T =175°C j I gate leakage current V =0V; V =15V; T =25°C - 2 100 nA GSS DS GS j V =0V; V =-15V; - 2 100 nA DS GS T =25°C j R drain-source on-state V =5V; I =15A; T =175°C; - - 84 mΩ DSon GS D j resistance seeFigure12 and 13 V =10V; I =15A; T =25°C - 32 36 mΩ GS D j V =4.5V; I =15A; T =25°C - - 45 mΩ GS D j V =5V; I =15A; T =25°C; - 34 40 mΩ GS D j seeFigure12 and 13 Source-drain diode V source-drain voltage I =20A; V =0V; T =25°C; - 0.85 1.2 V SD S GS j seeFigure16 t reverse recovery time I =20A; dI /dt=-100A/μs; - 45 - ns rr S S V =-10V; V =30V; Q recovered charge GS DS - 25 - nC r T =25°C j Dynamic characteristics Q total gate charge I =15A; V =44V; V =5V; - 11 - nC G(tot) D DS GS T =25°C; seeFigure14 Q gate-source charge j - 2 - nC GS Q gate-drain charge - 5 - nC GD C input capacitance V =0V; V =25V; - 765 1020 pF iss GS DS f=1MHz; T =25°C; C output capacitance j - 123 148 pF oss seeFigure15 C reverse transfer - 71 97 pF rss capacitance t turn-on delay time V =30V; R =2.2Ω; - 17 - ns d(on) DS L V =5V; R =10Ω; t rise time GS G(ext) - 93 - ns r T =25°C j t turn-off delay time - 35 - ns d(off) t fall time - 72 - ns f BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 5 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 03np10 03np09 60 50 VGS (V) = 10 6.0 (IAD) 5.0 R(mDSΩo)n 4.4 40 4.2 40 4.0 3.8 3.6 3.4 20 30 3.2 3.0 2.8 2.6 0 20 0 2 4 6 8 10 0 5 10 15 VDS (V) VGS (V) T =25°C;t =300(cid:541)s T =25°C;I =15A j p j D Fig 6. Output characteristics: drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 10−1 03ng53 30 03np07 (IAD) gfs (S) 10−2 25 min typ max 10−3 20 10−4 15 10−5 10−6 10 0 1 2 3 0 4 8 12 16 VGS (V) ID (A) T =25°C;V =V T =25°C;V =25V j DS GS j DS Fig 8. Sub-threshold drain current as a function of Fig 9. Forward transconductance as a function of gate-source voltage drain current; typical values BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 6 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 03np08 03ng52 20 2.5 ID VG(VS()th) (A) 2.0 15 max 1.5 typ 10 1.0 min 5 Tj = 175 °C Tj = 25 °C 0.5 0 0 0 1 2 3 4 −60 0 60 120 180 VGS (V) Tj (°C) V =25V I =1mA;V =V DS D DS GS Fig 10. Transfer characteristics: drain current as a Fig 11. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 03np11 03nb25 90 2.4 3.0 3.2 3.4 3.6 3.8 5.0 RDSon a (mΩ) 60 1.6 VGS (V) = 10 30 0.8 0 0 0 20 40 60 −60 0 60 120 180 ID (A) Tj (°C) Tj=25°C a= RDSon RDSon(25°C) Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 7 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 03np06 03np12 5 1400 VGS C (V) VDS = 14 V (pF) 4 VDS = 44 V 1050 Ciss 3 700 2 Coss 350 1 Crss 0 0 0 5 10 15 10−1 1 10 102 QG (nC) VDS (V) T =25°C;I =15A V =0V;f =1MHz j D GS Fig 14. Gate-source voltage as a function of gate Fig 15. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values 03np05 80 IS (A) 60 40 Tj = 175 °C Tj = 25 °C 20 0 0 0.5 1.0 1.5 VSD (V) V =0V GS Fig 16. Source current as a function of source-drain voltage; typical values BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 8 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 A2 E A C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w M A c 1/2 e A (A 3 ) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 b3 b4 c c2 D(1) Dm1a(1x) E(1) E1(1) e H L L1 L2 w y θ 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8° mm 0.25 4.20 1.27 0.25 0.1 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-10-13 SOT669 MO-235 06-03-16 Fig 17. Package outline SOT669 (LFPAK) BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 9 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9Y40-55B_3 20080222 Product data sheet - BUK9Y40-55B_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BUK9Y40-55B_2 20060411 Product data sheet - BUK9Y40_55B-01 BUK9Y40_55B-01 20040528 Product data sheet - - BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 10 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nexperia.com. 9.2 Definitions damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these modifications or additions. Nexperia does not give any products are for illustrative purposes only. Nexperia makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the information included herein and shall have no liability for the consequences of specified use without further testing or modification. use of such information. Quick reference data — The Quick reference data is an extract of the Short data sheet — A short data sheet is an extract from a full data sheet product data given in the Limiting values and Characteristics sections of this with the same product type number(s) and title. A short data sheet is intended document, and as such is not complete, exhaustive or legally binding. for quick reference only and should not be relied upon to contain detailed and Limiting values — Stress above one or more limiting values (as defined in full information. For detailed and full information see the relevant full data the Absolute Maximum Ratings System of IEC60134) may cause permanent sheet, which is available on request via the local Nexperia sales damage to the device. Limiting values are stress ratings only and operation of office. In case of any inconsistency or conflict with the short data sheet, the the device at these or any other conditions above those given in the full data sheet shall prevail. Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 9.3 Disclaimers Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, General — Information in this document is believed to be accurate and intellectual property rights infringement and limitation of liability, unless reliable. However, Nexperia does not give any representations or explicitly otherwise agreed to in writing by Nexperia. In case of warranties, expressed or implied, as to the accuracy or completeness of such any inconsistency or conflict between information in this document and such information and shall have no liability for the consequences of use of such terms and conditions, the latter will prevail. information. No offer to sell or license — Nothing in this document may be interpreted or Right to make changes — Nexperia reserves the right to make construed as an offer to sell products that is open for acceptance or the grant, changes to information published in this document, including without conveyance or implication of any license under any copyrights, patents or limitation specifications and product descriptions, at any time and without other industrial or intellectual property rights. notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, 9.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice: All referenced brands, product names, service names and trademarks malfunction of a Nexperia product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 10. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com BUK9Y40-55B_3 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 — 22 February 2008 11 of 12

BUK9Y40-55B Nexperia N-channel TrenchMOS logic level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Contact information. . . . . . . . . . . . . . . . . . . . . 11 11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 February 2008