BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with V rating of greater than 0.5 V at 175 °C GS(th) 3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 80 V DS j j I drain current V = 5 V; T = 25 °C; Fig. 1 - - 37 A D GS mb P total power dissipation T = 25 °C; Fig. 2 - - 95 W tot mb Static characteristics R drain-source on-state V = 5 V; I = 10 A; T = 25 °C; Fig. 11 - 22.2 27 mΩ DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V; I = 10 A; V = 64 V; - 5.8 - nC GD GS D DS T = 25 °C; Fig. 13; Fig. 14 j

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base; connected to LFPAK56; Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y25-80E LFPAK56; Plastic single-ended surface-mounted package (LFPAK56; SOT669 Power-SO8 Power-SO8); 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y25-80E 92580E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 80 V DS j j V drain-gate voltage R = 20 kΩ - 80 V DGR GS V gate-source voltage T ≤ 175 °C; DC -10 10 V GS j Tj ≤ 175 °C; Pulsed [1][2] -15 15 V I drain current T = 25 °C; V = 5 V; Fig. 1 - 37 A D mb GS T = 100 °C; V = 5 V; Fig. 1 - 26.5 A mb GS I peak drain current T = 25 °C; pulsed; t ≤ 10 µs; Fig. 4 - 150 A DM mb p P total power dissipation T = 25 °C; Fig. 2 - 95 W tot mb BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T = 25 °C - 37 A S mb I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 150 A SM p mb Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 37 A; Vsup ≤ 80 V; RGS = 50 Ω; [3][4] - 45.4 mJ avalanche energy V = 5 V; T = 25 °C; unclamped; GS j(init) Fig. 3 [1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information. 003aaj005 03aa16 40 120 IIDD ((AA)) Pder (%) 30 80 20 40 10 0 0 0 30 60 90 120 150 180 0 50 100 150 200 Tj (°C) Tmb(°C) Fig. 1. Continuous drain current as a function of Fig. 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 3 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 102 003aaj006 IIAALL ((AA)) ((11)) 10 ((22)) 1 ((33)) 10-1 10-2 10-3 10-2 10-1 1 10 tAL (ms) Fig. 3. Avalanche rating; avalanche current as a function of avalanche time 103 003aaj007 IIDD ((AA)) 102 LLiimmiitt RRDDSSoonn == VVDDSS // IIDD ttpp == 1100 uuss 110000 uuss 10 DDCC 1 11 mmss 10-1 1100 mmss 110000 mmss 10-2 1 10 102 103 VDS (V) Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - - 1.58 K/W th(j-mb) from junction to mounting base BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 4 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 003aai733 10 ZZtthh((jj--mmbb)) ((KK//WW)) 1 δδ == 00..55 00..22 00..11 10-1 00..0055 P δ = tp T 00..0022 ssiinnggllee sshhoott tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 80 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 72 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 1.4 1.7 2.1 V GS(th) D DS GS j voltage Fig. 9; Fig. 10 I = 1 mA; V = V ; T = -55 °C; - - 2.45 V D DS GS j Fig. 9 I = 1 mA; V = V ; T = 175 °C; 0.5 - - V D DS GS j Fig. 9 I drain leakage current V = 80 V; V = 0 V; T = 25 °C - 0.1 1 µA DSS DS GS j I drain leakage current V = 80 V; V = 0 V; T = 175 °C - - 500 µA DSS DS GS j I gate leakage current V = 10 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -10 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 5 V; I = 10 A; T = 25 °C; Fig. 11 - 22.2 27 mΩ DSon GS D j resistance R drain-source on-state V = 10 V; I = 10 A; T = 25 °C; - 20.5 25 mΩ DSon GS D j resistance Fig. 11 V = 5 V; I = 10 A; T = 175 °C; - - 67.8 mΩ GS D j Fig. 12; Fig. 11 BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 5 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q total gate charge I = 10 A; V = 64 V; V = 5 V; - 17.1 - nC G(tot) D DS GS T = 25 °C; Fig. 13; Fig. 14 Q gate-source charge j - 5.2 - nC GS Q gate-drain charge - 5.8 - nC GD C input capacitance V = 0 V; V = 25 V; f = 1 MHz; - 2032 2703 pF iss GS DS T = 25 °C; Fig. 15 C output capacitance j - 147 176 pF oss C reverse transfer - 75 103 pF rss capacitance t turn-on delay time V = 60 V; R = 4.98 Ω; V = 5 V; - 11.6 - ns d(on) DS L GS R = 5 Ω; T = 25 °C t rise time G(ext) j - 17.2 - ns r t turn-off delay time - 23.9 - ns d(off) t fall time - 15.3 - ns f Source-drain diode V source-drain voltage I = 10 A; V = 0 V; T = 25 °C; Fig. 16 - 0.81 1.2 V SD S GS j t reverse recovery time I = 10 A; dI /dt = -100 A/µs; V = 0 V; - 23.8 - ns rr S S GS V = 25 V; T = 25 °C Q recovered charge DS j - 27 - nC r 003aaj009 003aaj010 80 100 IIDD 1100 VV RRDDSSoonn ((AA)) 44..55 VV 80 60 33..55 VV VVGGSS == 33 VV 60 40 22..88 VV 40 20 22..66 VV 20 22..44 VV 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 VDS (V) VGS (V) T = 25 °C; t = 300 μs j p Fig. 7. Drain-source on-state resistance as a function Fig. 6. Output characteristics; drain current as a of gate-source voltage; typical values function of drain-source voltage; typical values BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 6 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 003aaj012 003aah025 75 3 IIDD VGS(th) ((AA)) (V) 2.5 60 max 2 45 typ 1.5 30 min 1 15 117755°°CC 0.5 TTjj == 2255°°CC 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 0 60 120 180 VGS (V) Tj(°C) Fig. 8. Transfer characteristics; drain current as a Fig. 9. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 10-1 003aah026 100 003aaj015 ID RRDDSSoonn 22..66 VV 22..88 VV (A) 10-2 80 10-3 min typ max 60 33 VV 10-4 40 44..55 VV 33..55 VV 10-5 20 VVGGSS == 1100 VV 10-6 0 0 1 2 3 0 5 10 15 20 25 30 35 40 VGS(V) ID (A) T = 25 °C; t = 300 μs Fig. 10. Sub-threshold drain current as a function of j p gate-source voltage Fig. 11. Drain-source on-state resistance as a function of drain current; typical values BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 7 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 003aag817 3 VDS a 2.4 ID VGS(pl) 1.8 VGS(th) 1.2 VGS QGS1 QGS2 0.6 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 180 Fig. 13. Gate charge waveform definitions Tj(°C) Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 10 003aaj017 104 003aaj018 VVGGSS CC ((VV)) ((ppFF)) 8 CCiissss 103 6 VVGGSS == 1144 VV 6644 VV 4 CCoossss 102 2 CCrrssss 0 10 0 5 10 15 20 25 30 35 40 10-1 1 10 102 QG (nC) VDS (V) Fig. 14. Gate-source voltage as a function of gate Fig. 15. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 8 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 003aaj019 150 IISS ((AA)) 125 100 75 50 25 117755°°CC TTjj == 2255°°CC 0 0 0.25 0.5 0.75 1 1.25 1.5 VSD (V) Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 9 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A2 C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w A c 1/2 e A (A3) A1 C q L detail X y C 0 5 mm θ scale 8° 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 b3 b4 c c2 D(1) D1(1) E(1) E1(1) e H L L1 L2 w y max 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 6.2 0.85 1.3 1.3 mm nom 0.25 1.27 0.25 0.1 min 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. sot669_po Outline References European Issue date version IEC JEDEC JEITA projection 11-03-25 SOT669 MO-235 13-02-27 Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 10 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. 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Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 12 / 13

Nexperia BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 08 May 2013 BUK9Y25-80E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 13 / 13