BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits (cid:132) Low conduction losses due to low (cid:132) Suitable for logic level gate drive on-state resistance sources (cid:132) Q101 compliant (cid:132) Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications (cid:132) 12 V, 24 V and 42 V loads (cid:132) General purpose power switching (cid:132) Automotive systems (cid:132) Solenoid drivers (cid:132) DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T ≥25°C; T ≤175°C - - 100 V DS j j voltage I drain current V =5V; T =25°C; - - 14.8 A D GS mb see Figure 1; see Figure 3 P total power T =25°C - - 59 W tot mb dissipation Static characteristics R drain-source V =10V; I =5A; T =25°C - 86 99 mΩ DSon GS D j on-state V =5V; I =5A; T =25°C; - 91 104 mΩ GS D j resistance see Figure 11; see Figure 12 Avalanche ruggedness E non-repetitive I =14.8A; V ≤100V; - - 35 mJ DS(AL)S D sup drain-source R =50Ω; V =5V; GS GS avalanche energy T =25°C; unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V; I =5A; - 4.7 - nC GD GS D V =80V; seeF igure 13 DS

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to mbb076 S drain 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK9Y104-100B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 2 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 100 V DS j j V drain-gate voltage R =20kΩ - - 100 V DGR GS V gate-source voltage -15 - 15 V GS I drain current T =25°C; V =5V; see Figure 1; - - 14.8 A D mb GS see Figure 3 T =100°C; V =5V; see Figure 1 - - 10.48 A mb GS I peak drain current T =25°C; t ≤10µs; pulsed; - - 59 A DM mb p see Figure 3 P total power dissipation T =25°C - - 59 W tot mb T storage temperature -55 - 175 °C stg T junction temperature -55 - 175 °C j Source-drain diode I source current T =25°C - - 14.8 A S mb I peak source current t ≤10ms; pulsed; T =25°C - - 59 A SM p mb Avalanche ruggedness E non-repetitive I =14.8A; V ≤100V; R =50Ω; - - 35 mJ DS(AL)S D sup GS drain-source V =5V; T =25°C; unclamped GS j(init) avalanche energy E repetitive drain-source see Figure 2 [1][2][3] - - - J DS(AL)R avalanche energy [4] [1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [4] Refer to application note AN10273 for further information. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 3 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 20 003aac524 102 003aac503 ID IAL (A) (A) 15 10 (1) 10 1 (2) 5 10-1 (3) 0 10-2 0 50 100 150 200 10-3 10-2 10-1 1 10 T (°C) t (ms) mb AL Fig 1. Continuous drain current as a function of Fig 2. Single-pulse and repetitive avalanche rating; mounting base temperature avalanche current as a function of avalanche time 102 003aac624 Limit R = V / I DSon DS D I D (A) 10μs 10 100μs DC 1 1ms 10ms 100ms 10-1 1 10 102 103 V (V) DS Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 4 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance see Figure 4 - - 2.53 K/W th(j-mb) from junction to mounting base 003aac483 10 Z th (j-mb) (K/W) δ = 0.5 1 0.2 0.1 10-1 0.05 P δ = Ttp 0.02 single shot tp t T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 1 t (s) p Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 5 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; T =25°C 100 - - V (BR)DSS D GS j breakdown voltage I =0.25mA; V =0V; T =-55°C 90 - - V D GS j V gate-source threshold I =1mA; V =V ; T =25°C; 1.25 1.65 2.15 V GS(th) D DS GS j voltage see Figure 9; see Figure 10 V gate-source threshold I =1mA; V =V ; T =175°C; 0.5 - - V GSth D DS GS j voltage see Figure 9; see Figure 10 I =1mA; V =V ; T =-55°C; - - 2.45 V D DS GS j see Figure 9; see Figure 10 I drain leakage current V =100V; V =0V; T =25°C - 0.02 1 µA DSS DS GS j I gate leakage current V =0V; V =15V; T =25°C - 2 100 nA GSS DS GS j V =0V; V =-15V; T =25°C - 2 100 nA DS GS j R drain-source on-state V =10V; I =5A; T =25°C - 86 99 mΩ DSon GS D j resistance V =5V; I =5A; T =175°C; - - 270 mΩ GS D j see Figure 11 V =4.5V; I =5A; T =25°C - - 107 mΩ GS D j V =5V; I =5A; T =25°C; - 91 104 mΩ GS D j see Figure 11; see Figure 12 I drain leakage current V =100V; V =0V; T =175°C - - 500 µA DSS DS GS j Dynamic characteristics Q total gate charge I =5A; V =80V; V =5V; - 11 - nC G(tot) D DS GS see Figure 13 Q gate-source charge - 1.7 - nC GS Q gate-drain charge - 4.7 - nC GD C input capacitance V =0V; V =25V; f=1MHz; - 854 1139 pF iss GS DS T =25°C; see Figure 14 C output capacitance j - 87 105 pF oss C reverse transfer - 42 58 pF rss capacitance t turn-on delay time V =30V; R =6Ω; V =5V; - 15 - ns d(on) DS L GS R =10Ω t rise time G(ext) - 8 - ns r t turn-off delay time - 36 - ns d(off) t fall time - 6 - ns f Source-drain diode V source-drain voltage I =5A; V =0V; T =25°C; - 0.85 1.2 V SD S GS j see Figure 15 t reverse recovery time I =20A; dI /dt=-100A/µs; V =0V; - 79 - ns rr S S GS V =30V Q recovered charge DS - 190 - nC r BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 6 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 003aac953 003aac957 40 400 ID RDSon 2.8 3.2 3.6 3.8 (A) (mΩ) 5 5 30 VGS (V) = 10 300 3.8 3.6 2.2 V (V) = 10 20 200 GS 3.2 3 10 100 2.6 2.2 0 0 0 2 4 6 8 10 0 10 20 30 40 VDS (V) ID (A) Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function function of drain-source voltage; typical values. of drain current; typical values. 003aac958 003aac954 30 20 gfs ID (S) (A) 25 15 20 10 15 5 Tj = 175 °C T = 25 °C j 10 0 0 10 20 30 0 1 2 3 4 5 I (A) V (V) D GS Fig 7. Forward transconductance as a function of Fig 8. Transfer characteristics: drain current as a drain current; typical values. function of gate-source voltage; typical values. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 7 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 2.5 003aad557 10-1 003aad565 VGS(th) max ID (V) (A) 2 10-2 typ min typ max 1.5 10-3 min 1 10-4 0.5 10-5 0 10-6 -60 0 60 120 180 0 1 2 3 Tj (°C) VGS (V) Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature gate-source voltage 03aa29 003aac956 3 110 R DSON a (mΩ) 2 100 1 90 0 80 -60 0 60 120 180 0 4 8 12 16 Tj (°C) VGS (V) Fig 11. Normalized drain-source on-state resistance Fig 12. Drain-source on-state resistance as a function factor as a function of junction temperature of gate-source voltage; typical values. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 8 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 5 003aac959 104 003aac952 V GS (V) C 4 (pF) V = 14 V DS 103 3 VDS = 80 V Ciss 2 102 C oss 1 C rss 0 10 10-1 1 10 102 0 4 8 QG (nC) 12 VDS (V) Fig 13. Gate-source voltage as a function of gate Fig 14. Input, output and reverse transfer capacitances charge; typical values. as a function of drain-source voltage; typical values. 003aac955 100 I S (A) 80 60 40 T= 175 °C j 20 T = 25 °C j 0 0.2 0.6 1 1.4 V (V) SD Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 9 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 A2 E A C b2 c2 E1 L1 b3 mounting base b4 D1 H D L2 1 2 3 4 X e b w M A c 1/2 e A (A 3 ) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 b3 b4 c c2 D(1) Dm1a(1x) E(1) E1(1) e H L L1 L2 w y θ 1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8° mm 0.25 4.20 1.27 0.25 0.1 1.01 0.00 0.95 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.8 3.1 5.8 0.40 0.8 0.8 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-10-13 SOT669 MO-235 06-03-16 Fig 16. Package outline SOT669 (LFPAK) BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 10 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9Y104-100B_4 20100407 Product data sheet - BUK9Y104-100B_3 Modifications: • Status changed from objective to product. BUK9Y104-100B_3 20100211 Objective data sheet - BUK9Y104-100B_2 BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 11 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment, modifications or additions. Nexperia does not give any nor in applications where failure or malfunction of a Nexperia representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or information included herein and shall have no liability for the consequences of severe property or environmental damage. Nexperia accepts no use of such information. liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk. with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and Applications — Applications that are described herein for any of these full information. For detailed and full information see the relevant full data products are for illustrative purposes only. Nexperia makes no sheet, which is available on request via the local Nexperia sales representation or warranty that such applications will be suitable for the office. In case of any inconsistency or conflict with the short data sheet, the specified use without further testing or modification. full data sheet shall prevail. Nexperia does not accept any liability related to any default, Product specification — The information and data provided in a Product damage, costs or problem which is based on a weakness or default in the data sheet shall define the specification of the product as agreed between customer application/use or the application/use of customer’s third party Nexperia and its customer, unless Nexperia and customer(s) (hereinafter both referred to as “Application”). It is customer’s customer have explicitly agreed otherwise in writing. In no event however, sole responsibility to check whether the Nexperia product is shall an agreement be valid in which the Nexperia product is suitable and fit for the Application planned. Customer has to do all necessary deemed to offer functions and qualities beyond those described in the testing for the Application in order to avoid a default of the Application and the Product data sheet. product. Nexperia does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the 9.3 Disclaimers product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in the be accurate and reliable. However, Nexperia does not give any Absolute Maximum Ratings System of IEC 60134) will cause permanent representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper) completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in consequences of use of such information. the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or In no event shall Nexperia be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — Nexperia damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial contract or any other legal theory. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Notwithstanding any damages that customer might incur for any reason agreement is concluded only the terms and conditions of the respective whatsoever, Nexperia’s aggregate and cumulative liability towards agreement shall apply. Nexperia hereby expressly objects to customer for the products described herein shall be limited in accordance applying the customer’s general terms and conditions with regard to the with the Terms and conditions of commercial sale of Nexperia. purchase of Nexperia products by customer. Right to make changes — Nexperia reserves the right to make No offer to sell or license — Nothing in this document may be interpreted or changes to information published in this document, including without construed as an offer to sell products that is open for acceptance or the grant, limitation specifications and product descriptions, at any time and without conveyance or implication of any license under any copyrights, patents or notice. This document supersedes and replaces all information supplied prior other industrial or intellectual property rights. to the publication hereof. BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 12 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK9Y104-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 — 7 April 2010 13 of 14

BUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 07 April 2010