BUK766R0-60E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 60 V DS j j ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 75 A P total power dissipation T = 25 °C; Fig. 1 - - 182 W tot mb Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 4.58 6 mΩ DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A; V = 48 V; V = 10 V; - 20 - nC GD D DS GS Fig. 13; Fig. 14 [1] Continuous current is limited by package.

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mb D mounting base; connected to mbb076 S 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK766R0-60E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK); 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK766R0-60E BUK766R0-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 60 V DS j j V drain-gate voltage R = 20 kΩ - 60 V DGR GS V gate-source voltage T ≤ 175 °C; DC -20 20 V GS j P total power dissipation T = 25 °C; Fig. 1 - 182 W tot mb ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - 75 A Tmb = 100 °C; VGS = 10 V; Fig. 2 [1] - 75 A I peak drain current T = 25 °C; pulsed; t ≤ 10 µs; Fig. 3 - 473 A DM mb p T storage temperature -55 175 °C stg T junction temperature -55 175 °C j BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 2 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tmb = 25 °C [1] - 75 A I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 473 A SM p mb Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 60 V; RGS = 50 Ω; [2][3] - 196 mJ avalanche energy V = 60 V; T = 25 °C; unclamped; GS j(init) Fig. 4 [1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Refer to application note AN10273 for further information. 03aa16 003aah705 120 150 I Pder D (A) (%) 80 100 (1) 40 50 0 0 0 50 100 150 200 0 50 100 150 200 Tmb(°C) Tmb(°C) (1) Capped at 75A due to package Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. Continuous drain current as a function of mounting base temperature BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 3 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 103 003aah707 I D (A) LimitR =V /I DSon DS D 102 tp=10µs 100µs 10 DC 1ms 1 10ms 100ms 10-1 10-1 1 10 102 V (V) DS Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 102 003aah706 I AL (A) (1) 10 (2) 1 (3) 10-1 10-3 10-2 10-1 1 t (ms) 10 AL Fig. 4. Single pulse avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 5 - - 0.82 K/W th(j-mb) from junction to mounting base R thermal resistance minimum footprint ; mounted on a - 50 - K/W th(j-a) from junction to printed-circuit board ambient BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 4 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 003aah708 1 δ=0.5 Z th(j-mb) (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 singleshot P δ= tp T tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 t (s) 1 p Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 250 µA; V = 0 V; T = 25 °C 60 - - V (BR)DSS D GS j breakdown voltage I = 250 µA; V = 0 V; T = -55 °C 54 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 25 °C; 2.4 3 4 V GS(th) D DS GS j voltage Fig. 9; Fig. 10 I = 1 mA; V = V ; T = 175 °C; 1 - - V D DS GS j Fig. 9 I = 1 mA; V = V ; T = -55 °C; - - 4.5 V D DS GS j Fig. 9 I drain leakage current V = 60 V; V = 0 V; T = 25 °C - 0.05 1 µA DSS DS GS j V = 60 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 20 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -20 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 4.58 6 mΩ DSon GS D j resistance Fig. 11 V = 10 V; I = 25 A; T = 175 °C; - - 13 mΩ GS D j Fig. 11; Fig. 12 Dynamic characteristics Q total gate charge I = 25 A; V = 48 V; V = 10 V; - 62 - nC G(tot) D DS GS Fig. 13; Fig. 14 Q gate-source charge - 16 - nC GS Q gate-drain charge - 20 - nC GD BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 5 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET Symbol Parameter Conditions Min Typ Max Unit C input capacitance V = 0 V; V = 25 V; f = 1 MHz; - 3390 4520 pF iss GS DS T = 25 °C; Fig. 15 C output capacitance j - 447 536 pF oss C reverse transfer - 272 372 pF rss capacitance t turn-on delay time V = 45 V; R = 1.8 Ω; V = 10 V; - 19 - ns d(on) DS L GS R = 5 Ω t rise time G(ext) - 36 - ns r t turn-off delay time - 38 - ns d(off) t fall time - 34 - ns f L internal drain from upper edge of mounting base to - 2.5 - nH D inductance centre of die L internal source measured from source lead to source - 7.5 - nH S inductance bond pad Source-drain diode V source-drain voltage I = 25 A; V = 0 V; T = 25 °C; Fig. 16 - 0.84 1.2 V SD S GS j t reverse recovery time I = 20 A; dI /dt = -100 A/µs; V = 0 V; - 35 - ns rr S S GS V = 25 V Q recovered charge DS - 43 - nC r 003aah709 003aah710 240 20 VGS(V)=10 8 R I DSon D (mΩ) (A) 15 160 6 10 5.5 80 5 5 4.5 0 0 0 1 2 3 VDS(V) 4 0 5 10 15 VGS(V) 20 T = 25 °C; t = 300 μs j p Fig. 7. Drain-source on-state resistance as a function Fig. 6. Output characteristics; drain current as a of gate-source voltage; typical values function of drain-source voltage; typical values BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 6 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 003aah712 003aah027 300 5 V GS(th) I (V) D max (A) 4 200 3 typ Tj=175°C 2 min 100 Tj=25°C 1 0 0 0 2 4 6 V (V) 8 -60 0 60 120 180 GS Tj(°C) Fig. 8. Transfer characteristics; drain current as a Fig. 9. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 10-1 003aah028 15 003aah715 I D 5.5 6 (A) R DSon 10-2 (mΩ) 10 min typ max 10-3 8 10-4 5 V (V)=10 GS 10-5 10-6 0 0 2 4 VGS(V) 6 0 80 160 ID(A) 240 T = 25 °C; t = 300 μs Fig. 10. Sub-threshold drain current as a function of j p gate-source voltage Fig. 11. Drain-source on-state resistance as a function of drain current; typical values BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 7 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 003aag814 2.4 VDS a ID 1.8 VGS(pl) 1.2 VGS(th) VGS QGS2 0.6 QGS1 QGS QGD QG(tot) 003aaa508 0 Fig. 13. Gate charge waveform definitions -60 0 60 120 180 Tj(°C) Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 10 003aah717 104 003aah718 V GS (V) C 14V (pF) 8 C iss 6 V =48V DS 103 4 C oss 2 C rss 0 102 0 25 50 75 10-1 1 10 102 Q (nC) V (V) G DS Fig. 14. Gate-source voltage as a function of gate Fig. 15. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 8 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 003aah719 240 I S (A) 160 Tj=175°C 80 Tj=25°C 0 0 0.4 0.8 1.2 1.6 V (V) SD Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 9 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 11. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b2 b c e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit A A1 b b2 c D D1 E e HD Lp Q max 4.5 1.40 0.85 1.45 0.64 11 1.6 10.3 15.8 2.9 2.6 mm nom 2.54 min 4.1 1.27 0.60 1.05 0.46 1.2 9.7 14.8 2.1 2.2 sot404_po Outline References European Issue date version IEC JEDEC JEITA projection 06-03-16 SOT404 13-02-25 Fig. 17. Package outline D2PAK (SOT404) BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 10 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 12. 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Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 12 / 13

Nexperia BUK766R0-60E N-channel TrenchMOS standard level FET 13. Contents 1 General description ...............................................1 2 Features and benefits ............................................1 3 Applications ...........................................................1 4 Quick reference data .............................................1 5 Pinning information ...............................................2 6 Ordering information .............................................2 7 Marking ...................................................................2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics .......................................................5 11 Package outline ...................................................10 12 Legal information .................................................11 12.1 Data sheet status ...............................................11 12.2 Definitions ...........................................................11 12.3 Disclaimers .........................................................11 12.4 Trademarks ........................................................12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 July 2016 BUK766R0-60E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 13 / 13