BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits (cid:132) AEC Q101 compliant (cid:132) Low conduction losses due to low on-state resistance 1.3 Applications (cid:132) Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 100 V DS j j I drain current T =25°C - - 47 A D mb P total power dissipation - - 166 W tot Static characteristics R drain-source on-state V =10V; I =25A; - 20 28 mΩ DSon GS D resistance T =25°C j Avalanche ruggedness E non-repetitive I =30A; V ≤25V; - - 45 mJ DS(AL)S D sup drain-source R =50Ω; V =5V; GS GS avalanche energy T =25°C; unclamped j(init)

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK7628-100A D2PAK plastic single-ended surface-mounted package (D2PAK); SOT404 3 leads (one lead cropped) BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 2 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 100 V DS j j V drain-gate voltage R =20kΩ - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T =100°C - 33 A D mb T =25°C - 47 A mb I peak drain current T =25°C; pulsed - 187 A DM mb P total power dissipation T =25°C - 166 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C - 47 A S mb I peak source current pulsed; T =25°C - 187 A SM mb Avalanche ruggedness E non-repetitive drain-source I =30A; V ≤25V; R =50Ω; - 45 mJ DS(AL)S D sup GS avalanche energy V =5V; T =25°C; unclamped GS j(init) 003aaf147 003aaf150 100 100 Pder ID (%) (%) 80 80 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) V ≥ 5 V GS Fig 1. Normalized total power dissipation as a Fig 2. Continuous drain current as a function of function of mounting base temperature mounting base temperature BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 3 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 103 003aaf153 120 003aaf168 I(DAM) RDS(on) = VDS / ID W(D%S)S 102 tp = 1 μs 80 10 μs 100 μs D.C. 10 1 ms 40 10 ms 100 ms 1 0 1 10 102 103 20 60 100 140 180 VDS (V) T(mb) (°C) T = 25 °C; I is single pulse I = 75 A; unclamped inductive load mb DM D Fig 3. Safe operating area; continuous and peak drain Fig 4. Normalised drain-source non-repetitive currents as a function of drain-source voltage avalanche energy rating; avalanche energy as a function of mounting base temperature 102 003aaf169 IAV (A) 25 °C 10 Tj prior to avalanche = 150 °C 1 10−3 10−2 10−1 1 10 tAV (ms) unclamped inductive load Fig 5. Single-shot avalanche rating; avalanche current as a function of avalanche period BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 4 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from - - 0.9 K/W th(j-mb) junction to mounting base R thermal resistance from minimum footprint; FR4 board - 50 - K/W th(j-a) junction to ambient 003aaf156 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 10−1 0.1 0.05 0.02 P δ = tp T 10−2 0 tp t T 10−3 10−7 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 5 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; T =25°C 100 - - V (BR)DSS D GS j breakdown voltage I =0.25mA; V =0V; T =-55°C 89 - - V D GS j V gate-source threshold I =1mA; V =V ; T =25°C 2 3 4 V GS(th) D DS GS j voltage I =1mA; V =V ; T =-55°C - - 4.4 V D DS GS j I =1mA; V =V ; T =175°C 1 - - V D DS GS j I drain leakage current V =100V; V =0V; T =175°C - - 500 µA DSS DS GS j V =100V; V =0V; T =25°C - 0.05 10 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 2 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 2 100 nA GS DS j R drain-source on-state V =10V; I =25A; T =175°C - - 76 mΩ DSon GS D j resistance V =10V; I =25A; T =25°C - 20 28 mΩ GS D j Dynamic characteristics C input capacitance V =0V; V =25V; f=1MHz; - 2320 3100 pF iss GS DS T =25°C C output capacitance j - 315 378 pF oss C reverse transfer - 187 256 pF rss capacitance t turn-on delay time V =30V; R =1.2Ω; V =10V; - 15 23 ns d(on) DS L GS R 10Ω; T =25°C G(ext) j t rise time V =30V; R =1.2Ω; V =10V; - 70 105 ns r DS L GS R =10Ω; T =25°C t turn-off delay time G(ext) j - 83 116 ns d(off) t fall time - 45 63 ns f L internal drain from upper edge of drain tab to centre of - 2.5 - nH D inductance die; T =25°C j from drain lead 6 mm from package to - 4.5 - nH centre of die; T =25°C j L internal source from source lead to source bond pad; - 7.5 - nH S inductance T =25°C j Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C - 0.85 1.2 V SD S GS j I =47A; V =0V; T =25°C - 1.1 - V S GS j t reverse recovery time I =47A; dI /dt=-100A/µs; - 66 - ns rr S S V =-10V; V =30V; T =25°C Q recovered charge GS DS j - 0.24 - µC r BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 6 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 003aaf157 003aaf158 200 65 ID VGS (V) = 20 RDS(on) 5.5 6.0 (A) 13.5 (mΩ) 160 10.0 55 6.5 9.0 8.0 7.0 120 7.5 45 7.0 6.5 7.5 8.0 80 35 6.0 5.5 40 25 5.0 VGS (V) = 10 4.5 0 15 0 2 4 6 8 10 5 45 85 125 VDS (V) ID (A) T = 25 °C T = 25 °C j j Fig 7. Output characteristics: drain current as a Fig 8. Drain-source on-state resistance as a function function of drain-source voltage; typical values of drain current; typical values 003aaf159 003aaf160 31 100 RDS(on) ID (mΩ) (A) 80 27 60 23 40 19 Tj = 175 °C Tj = 25 °C 20 15 0 5 7 9 11 13 15 0 2 4 6 8 VGS (V) VGS (V) T = 25 °C; I = 25 A V > I x R j D DS D DSon Fig 9. Drain-source on-state resistance as a function Fig 10. Transfer characteristics: drain current as a of gate-source voltage; typical values function of gate-source voltage; typical values 003aaf161 003aaf162 50 2.0 gfs (S) a 40 1.5 30 1.0 20 0.5 10 0 0 0 20 40 60 80 100 −100 0 100 200 ID (A) Tj (°C) V > I x R DS D DSon Fig 11. Forward transconductance as a function of Fig 12. Normalized drain-source on-state resistance drain current; typical values factor as a function of junction temperature BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 7 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 5 003aaf163 10−1 003aaf164 VGS(th) ID (V) (A) 4 maximum 10−2 3 typical 10−3 2 minimum 10−4 2 % typical 98 % 1 10−5 0 10−6 −100 0 100 200 0 1 2 3 4 5 Tj (°C) VGS (V) I = 1 mA; V = V T = 25 °C; V = V D DS GS j DS GS Fig 13. Gate-source threshold voltage as a function of Fig 14. Sub-threshold drain current as a function of junction temperature gate-source voltage 003aaf165 003aaf166 5 10 C Ciss VGS (nF) (V) 4 8 3 Coss 6 VDD = 14 V VDD = 44 V 2 Crss 4 1 2 0 0 10−2 10−1 1 10 102 0 50 100 150 VDS (V) QG (nC) V = 0 V; f = 1 MHz T = 25 °C; I = 25 A GS j D Fig 15. Input, output and reverse transfer capacitances Fig 16. Gate-source voltage as a function of gate as a function of drain-source voltage; typical charge; typical values values 003aaf167 100 IF (A) 80 60 Tj = 175 °C Tj = 25 °C 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSDS (V) V = 0 V GS Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 8 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b c e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) D UNIT A A1 b c max. D1 E e Lp HD Q 4.50 1.40 0.85 0.64 1.60 10.30 2.90 15.80 2.60 mm 11 2.54 4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-02-11 SOT404 06-03-16 Fig 18. Package outline SOT404 (D2PAK) BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 9 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes BUK7628-100A v.2 20110426 Product data sheet - BUK7528_7628-100A_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7628-100A separated from data sheet BUK7528_7628-100A_1. BUK7528_7628-100A_1 20000301 Product specification - - BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 10 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment, modifications or additions. Nexperia does not give any nor in applications where failure or malfunction of a Nexperia representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or information included herein and shall have no liability for the consequences of severe property or environmental damage. Nexperia accepts no use of such information. liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk. with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and Quick reference data — The Quick reference data is an extract of the full information. For detailed and full information see the relevant full data product data given in the Limiting values and Characteristics sections of this sheet, which is available on request via the local Nexperia sales document, and as such is not complete, exhaustive or legally binding. office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Product specification — The information and data provided in a Product representation or warranty that such applications will be suitable for the data sheet shall define the specification of the product as agreed between specified use without further testing or modification. Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, Customers are responsible for the design and operation of their applications shall an agreement be valid in which the Nexperia product is and products using Nexperia products, and Nexperia deemed to offer functions and qualities beyond those described in the accepts no liability for any assistance with applications or customer product Product data sheet. design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of 9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their Limited warranty and liability — Information in this document is believed to applications and products. be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or Nexperia does not accept any liability related to any default, completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the consequences of use of such information. customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary In no event shall Nexperia be liable for any indirect, incidental, testing for the customer’s applications and products using Nexperia punitive, special or consequential damages (including - without limitation - lost products in order to avoid a default of the applications and profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party replacement of any products or rework charges) whether or not such customer(s). Nexperia does not accept any liability in this respect. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper) whatsoever, Nexperia’s aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the with the Terms and conditions of commercial sale of Nexperia. BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 11 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET Characteristics sections of this document is not warranted. Constant or Export control — This document as well as the item(s) described herein may repeated exposure to limiting values will permanently and irreversibly affect be subject to export control regulations. Export might require a prior the quality and reliability of the device. authorization from national authorities. Terms and conditions of commercial sale — Nexperia 9.4 Trademarks products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Notice: All referenced brands, product names, service names and trademarks agreement is concluded only the terms and conditions of the respective are the property of their respective owners. agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK7628-100A All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 26 April 2011 12 of 13

BUK7628-100A Nexperia N-channel TrenchMOS standard level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Contact information. . . . . . . . . . . . . . . . . . . . . .12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 26 April 2011