BUK7626-100B N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits (cid:132) AEC Q101 compliant (cid:132) Suitable for standard level gate drive sources (cid:132) Low conduction losses due to low on-state resistance (cid:132) Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications (cid:132) 12 V, 24 V and 42 V loads (cid:132) General purpose power switching (cid:132) Automotive systems (cid:132) Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T ≥25°C; T ≤175°C - - 100 V DS j j voltage I drain current V =10V; T =25°C; - - 49 A D GS mb see Figure 1; see Figure 3 P total power T =25°C; see Figure 2 - - 157 W tot mb dissipation Static characteristics R drain-source V =10V; I =25A; - 22 26 mΩ DSon GS D on-state T =25°C; see Figure 11; j resistance see Figure 12

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =49A; V ≤100V; - - 144 mJ DS(AL)S D sup drain-source R =50Ω; V =10V; GS GS avalanche energy T =25°C; unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V; I =25A; - 13 - nC GD GS D V =80V; T =25°C; DS j see Figure 13 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain[1] 3 S source G mb D mounting base; connected to drain mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK7626-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 2 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 100 V DS j j V drain-gate voltage R =20kΩ - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25°C; V =10V; see Figure 1; - 49 A D mb GS see Figure 3 T =100°C; V =10V; see Figure 1 - 34 A mb GS I peak drain current T =25°C; pulsed; t ≤10µs; - 197 A DM mb p see Figure 3 P total power dissipation T =25°C; see Figure 2 - 157 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C - 49 A S mb I peak source current pulsed; t ≤10µs; T =25°C - 197 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =49A; V ≤100V; R =50Ω; - 144 mJ DS(AL)S D sup GS avalanche energy V =10V; T =25°C; unclamped GS j(init) 03nm45 03na19 60 120 ID Pder (A) (%) 40 80 20 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a function of mounting base temperature function of mounting base temperature BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 3 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 103 03nm43 ID Limit RDSon = VDS / ID (A) 102 tp = 10 μs 100 μs 10 DC 1 ms 10 ms 100 ms 1 1 10 102 103 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from see Figure 4 - - 0.95 K/W th(j-mb) junction to mounting base R thermal resistance from minimum footprint; mounted on - - 50 K/W th(j-a) junction to ambient a printed-circuit board 03nm44 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 0.1 10−1 0.05 0.02 10−2 P δ = tp single shot T tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 4 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =0.25mA; V =0V; T =25°C 100 - - V (BR)DSS D GS j breakdown voltage I =0.25mA; V =0V; T =-55°C 89 - - V D GS j V gate-source threshold I =1mA; V =V ; T =175°C; 1 - - V GS(th) D DS GS j voltage see Figure 10 I =1mA; V =V ; T =25°C; 2 3 4 V D DS GS j see Figure 10 I =1mA; V =V ; T =-55°C; - - 4.4 V D DS GS j see Figure 10 I drain leakage current V =100V; V =0V; T =175°C - - 500 µA DSS DS GS j V =100V; V =0V; T =25°C - 0.02 1 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 2 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 2 100 nA GS DS j R drain-source on-state V =10V; I =25A; T =175°C; - - 65 mΩ DSon GS D j resistance see Figure 11; see Figure 12 V =10V; I =25A; T =25°C; - 22 26 mΩ GS D j see Figure 11; see Figure 12 Dynamic characteristics Q total gate charge I =25A; V =80V; V =10V; - 38 - nC G(tot) D DS GS T =25°C; see Figure 13 Q gate-source charge j - 9 - nC GS Q gate-drain charge - 13 - nC GD C input capacitance V =0V; V =25V; f=1MHz; - 2168 2891 pF iss GS DS T =25°C; see Figure 14 C output capacitance j - 238 286 pF oss C reverse transfer - 102 140 pF rss capacitance t turn-on delay time V =30V; R =1.2Ω; V =10V; - 21 - ns d(on) DS L GS R =10Ω; T =25°C t rise time G(ext) j - 40 - ns r t turn-off delay time - 47 - ns d(off) t fall time - 19 - ns f L internal drain from drain lead 6 mm from package to - 4.5 - nH D inductance centre of die; T =25°C j from upper edge of drain mounting base - 2.5 - nH to centre of die; T =25°C j L internal source from source lead 6 mm from package to - 7.5 - nH S inductance source bond pad; T =25°C j Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.85 1.2 V SD S GS j see Figure 15 t reverse recovery time I =20A; dI /dt=-100A/µs; - 94 - ns rr S S V =-10V; V =30V; T =25°C Q recovered charge GS DS j - 115 - nC r BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 5 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 03nm40 03nm39 150 50 Label is VGS (V) 8 RDSon ID 10 (mΩ) (A) 20 43 7.5 100 7 36 6.5 29 6 50 5.5 22 5 4.5 0 15 0 2 4 6 8 10 5 10 15 20 VDS (V) VGS (V) Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 10−1 03aa35 35 03nm37 ID gfs (A) (S) 10−2 min typ max 28 10−3 21 10−4 14 10−5 7 10−6 0 0 2 4 6 0 25 50 75 100 VGS (V) ID (A) Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of gate-source voltage drain current; typical values BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 6 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 03nm38 03aa32 100 5 ID VGS(th) (A) (V) 4 max 75 3 typ 50 2 min 25 Tj = 175 °C Tj = 25 °C 1 0 0 0 2 4 6 8 −60 0 60 120 180 VGS (V) Tj (°C) Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 60 03nm41 2.8 03ng41 RDSon Label is VGS (V) (mΩ) a 5.5 6 50 2.1 6.5 40 7 8 1.4 30 20 0.7 20 9 10 10 0 0 25 50 75 100 -60 0 60 120 180 ID (A) Tj (°C) Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 7 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 10 03nm36 3000 03nm42 VGS Ciss (V) C 8 (pF) VDD = 14 V VDD = 80 V 2000 6 Coss 4 1000 Crss 2 0 0 0 10 20 30 40 10−2 10−1 1 10 102 QG (nC) V (V) DS Fig 13. Gate-source voltage as a function of gate Fig 14. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values 100 03nm35 IS (A) 75 50 25 Tj = 175 °C Tj = 25 °C 0 0.0 0.5 1.0 1.5 VSD (V) Fig 15. Source current as a function of source-drain voltage; typical values BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 8 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b c e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) D UNIT A A1 b c max. D1 E e Lp HD Q 4.50 1.40 0.85 0.64 1.60 10.30 2.90 15.80 2.60 mm 11 2.54 4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-02-11 SOT404 06-03-16 Fig 16. Package outline SOT404 (D2PAK) BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 9 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes BUK7626-100B v.2 20110202 Product data sheet - BUK75_7626_100B-01 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7626-100B separated from data sheet BUK75_7626_100B-01. BUK75_7626_100B-01 20030411 Product data - - (9397 750 11238) BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 10 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment, modifications or additions. Nexperia does not give any nor in applications where failure or malfunction of a Nexperia representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or information included herein and shall have no liability for the consequences of severe property or environmental damage. Nexperia accepts no use of such information. liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk. with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and Quick reference data — The Quick reference data is an extract of the full information. For detailed and full information see the relevant full data product data given in the Limiting values and Characteristics sections of this sheet, which is available on request via the local Nexperia sales document, and as such is not complete, exhaustive or legally binding. office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Product specification — The information and data provided in a Product representation or warranty that such applications will be suitable for the data sheet shall define the specification of the product as agreed between specified use without further testing or modification. Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, Customers are responsible for the design and operation of their applications shall an agreement be valid in which the Nexperia product is and products using Nexperia products, and Nexperia deemed to offer functions and qualities beyond those described in the accepts no liability for any assistance with applications or customer product Product data sheet. design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of 9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their Limited warranty and liability — Information in this document is believed to applications and products. be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or Nexperia does not accept any liability related to any default, completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the consequences of use of such information. customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary In no event shall Nexperia be liable for any indirect, incidental, testing for the customer’s applications and products using Nexperia punitive, special or consequential damages (including - without limitation - lost products in order to avoid a default of the applications and profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party replacement of any products or rework charges) whether or not such customer(s). Nexperia does not accept any liability in this respect. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper) whatsoever, Nexperia’s aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the with the Terms and conditions of commercial sale of Nexperia. Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect Right to make changes — Nexperia reserves the right to make the quality and reliability of the device. changes to information published in this document, including without limitation specifications and product descriptions, at any time and without Terms and conditions of commercial sale — Nexperia notice. This document supersedes and replaces all information supplied prior products are sold subject to the general terms and conditions of commercial to the publication hereof. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 11 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET agreement is concluded only the terms and conditions of the respective 9.4 Trademarks agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the Notice: All referenced brands, product names, service names and trademarks purchase of Nexperia products by customer. are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK7626-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 2 February 2011 12 of 13

BUK7626-100B Nexperia N-channel TrenchMOS standard level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Contact information. . . . . . . . . . . . . . . . . . . . . .12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 02 February 2011