BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - - 100 V DS j j ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3 [1] - - 75 A P total power dissipation T = 25 °C; Fig. 2 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 8.6 10 mΩ DSon GS D j resistance Fig. 11; Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V; I = 25 A; V = 80 V; - 22 - nC GD GS D DS T = 25 °C; Fig. 13 j Avalanche ruggedness E non-repetitive drain- I = 75 A; V ≤ 100 V; R = 50 Ω; - - 629 mJ DS(AL)S D sup GS source avalanche V = 10 V; T = 25 °C; unclamped GS j(init) energy

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET [1] Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain[1] G 3 S source mb D mounting base; connected to mbb076 S 2 drain 1 3 D2PAK (SOT404) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7610-100B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK7610-100B BUK7610-100B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥ 25 °C; T ≤ 175 °C - 100 V DS j j V drain-gate voltage R = 20 kΩ - 100 V DGR GS V gate-source voltage -20 20 V GS ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 [1] - 110 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; Fig. 1 [2] - 75 A I peak drain current T = 25 °C; pulsed; t ≤ 10 µs; Fig. 3 - 438 A DM mb p BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 2 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET Symbol Parameter Conditions Min Max Unit P total power dissipation T = 25 °C; Fig. 2 - 300 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode IS source current Tmb = 25 °C [1] - 110 A [2] - 75 A I peak source current pulsed; t ≤ 10 µs; T = 25 °C - 438 A SM p mb Avalanche ruggedness E non-repetitive drain-source I = 75 A; V ≤ 100 V; R = 50 Ω; - 629 mJ DS(AL)S D sup GS avalanche energy V = 10 V; T = 25 °C; unclamped GS j(init) [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. 03ng70 03na19 120 120 ID Cappedat75Aduetopackage Pder (A) (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb(°C) Tmb(°C) Fig. 1. Normalized continuous drain current as a Fig. 2. Normalized total power dissipation as a function of mounting base temperature function of mounting base temperature BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 3 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 003aag933 103 I D (A) LimitRDSon=VDS/ID tp=10µs 102 100µs 10 Cappedat75Aduetopackage DC 1ms 1 10ms 100ms 10-1 1 10 102 103 V (V) DS Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance Fig. 4 - - 0.5 K/W th(j-mb) from junction to mounting base R thermal resistance mounted on printed-circuit board ; - 50 - K/W th(j-a) from junction to minimum footprint ambient 03ng69 1 Zth(j-mb) (K/W) δ=0.5 10-1 0.2 0.1 0.05 0.02 tp 10-2 P δ= T SingleShot tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp(s) Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 4 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I = 0.25 mA; V = 0 V; T = 25 °C 100 - - V (BR)DSS D GS j breakdown voltage I = 0.25 mA; V = 0 V; T = -55 °C 89 - - V D GS j V gate-source threshold I = 1 mA; V = V ; T = 175 °C; 1 - - V GS(th) D DS GS j voltage Fig. 10 I = 1 mA; V = V ; T = 25 °C; 2 3 4 V D DS GS j Fig. 10 I = 1 mA; V = V ; T = -55 °C; - - 4.4 V D DS GS j Fig. 10 I drain leakage current V = 100 V; V = 0 V; T = 25 °C - 0.02 1 µA DSS DS GS j V = 100 V; V = 0 V; T = 175 °C - - 500 µA DS GS j I gate leakage current V = 20 V; V = 0 V; T = 25 °C - 2 100 nA GSS GS DS j V = -20 V; V = 0 V; T = 25 °C - 2 100 nA GS DS j R drain-source on-state V = 10 V; I = 25 A; T = 25 °C; - 8.6 10 mΩ DSon GS D j resistance Fig. 11; Fig. 12 V = 10 V; I = 25 A; T = 175 °C; - - 25 mΩ GS D j Fig. 11; Fig. 12 Dynamic characteristics Q total gate charge I = 25 A; V = 80 V; V = 10 V; - 80 - nC G(tot) D DS GS T = 25 °C; Fig. 13 Q gate-source charge j - 18 - nC GS Q gate-drain charge - 22 - nC GD C input capacitance V = 0 V; V = 25 V; f = 1 MHz; - 5080 6773 pF iss GS DS T = 25 °C; Fig. 14 C output capacitance j - 677 812 pF oss C reverse transfer - 168 230 pF rss capacitance t turn-on delay time V = 30 V; R = 1.2 Ω; V = 10 V; - 33 - ns d(on) DS L GS R = 10 Ω; T = 25 °C t rise time G(ext) j - 45 - ns r t turn-off delay time - 120 - ns d(off) t fall time - 36 - ns f L internal drain from drain lead 6 mm from package to - 4.5 - nH D inductance centre of die ; T = 25 °C j from upper edge of drain mounting - 2.5 - nH base to centre of die ; T = 25 °C j L internal source from source lead to source bond pad ; - 7.5 - nH S inductance T = 25 °C j BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 5 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I = 40 A; V = 0 V; T = 25 °C; Fig. 15 - 0.85 1.2 V SD S GS j t reverse recovery time I = 20 A; dI /dt = -100 A/µs; - 69 - ns rr S S V = -10 V; V = 30 V; T = 25 °C Q recovered charge GS DS j - 212 - nC r 03ng76 03ng75 350 11 ID 20 7 (A) 10 RDSon 300 6.5 (mΩ) 8 10 250 200 5.5 9 150 100 8 50 VGS=4.5V 0 7 0 2 4 6 8 10 5 10 15 20 VDS(V) VGS(V) Fig. 5. Output characteristics: drain current as a Fig. 6. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values 10-1 03aa35 100 03ng73 ID gfs (A) (S) min typ max 10-2 80 10-3 60 10-4 40 10-5 20 10-6 0 0 2 4 6 0 20 40 60 80 VGS(V) ID(A) Fig. 7. Sub-threshold drain current as a function of Fig. 8. Forward transconductance as a function of gate-source voltage drain current; typical values BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 6 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 03ng74 03aa32 100 5 ID VGS(th) (A) (V) 80 4 max 60 3 typ 40 2 min Tj=175°C 20 1 Tj=25°C 0 0 0 2 4 6 -60 0 60 120 180 VGS(V) Tj(°C) Fig. 9. Transfer characteristics: drain current as a Fig. 10. Gate-source threshold voltage as a function of function of gate-source voltage; typical values junction temperature 03ng77 03ng41 13 2.8 RDSon VGS=6V (mΩ) a 12 6.5 2.1 9 7 11 8 10 1.4 10 0.7 9 8 0 0 50 100 150 200 -60 0 60 120 180 ID(A) Tj(°C) Fig. 11. Drain-source on-state resistance as a function Fig. 12. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 7 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 03ng72 03ng78 10 7000 C VGS (pF) Ciss (V) 6000 8 5000 VDD=14V VDD=80V Coss 6 4000 3000 4 2000 Crss 2 1000 0 0 0 20 40 60 80 10-1 1 10 102 QG(nC) VDS(V) Fig. 13. Gate-source voltage as a function of gate Fig. 14. Input, output and reverse transfer capacitances charge; typical values as a function of drain-source voltage; typical values 03ng71 100 IS (A) 80 60 40 20 Tj=175°C Tj=25°C 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD(V) Fig. 15. Reverse diode current as a function of reverse diode voltage; typical value BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 8 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 8. Package outline Plasticsingle-endedsurface-mountedpackage(D2PAK);3leads(oneleadcropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b c e e Q 0 2.5 5mm scale DIMENSIONS(mmaretheoriginaldimensions) D UNIT A A1 b c max. D1 E e Lp HD Q mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60 4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20 OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 05-02-11 SOT404 06-03-16 Fig. 16. D2PAK (SOT404) BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 9 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - 9. Legal information lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 9.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance Document Product Definition with the Terms and conditions of commercial sale of Nexperia. status [1][2] status [3] Objective Development This document contains data from Right to make changes — Nexperia reserves the right to [short] data the objective specification for product make changes to information published in this document, including without sheet development. limitation specifications and product descriptions, at any time and without Preliminary Qualification This document contains data from the notice. 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Nexperia BUK7610-100B N-channel TrenchMOS standard level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 11 / 12

Nexperia BUK7610-100B N-channel TrenchMOS standard level FET 10. Contents 1 Product profile .......................................................1 1.1 General description ..............................................1 1.2 Features and benefits ...........................................1 1.3 Applications ..........................................................1 1.4 Quick reference data ............................................1 2 Pinning information ...............................................2 3 Ordering information .............................................2 4 Marking ...................................................................2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics .......................................................5 8 Package outline .....................................................9 9 Legal information .................................................10 9.1 Data sheet status ...............................................10 9.2 Definitions ...........................................................10 9.3 Disclaimers .........................................................10 9.4 Trademarks ........................................................11 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 06 July 2012 BUK7610-100B All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 12 / 12