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BUK7528-55A TO-220AB N-channel TrenchMOS standard level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits (cid:132) AEC Q101 compliant (cid:132) Low conduction losses due to low on-state resistance 1.3 Applications (cid:132) Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25°C; T ≤175°C - - 55 V DS j j I drain current T =25°C - - 42 A D mb P total power dissipation - - 99 W tot Static characteristics R drain-source on-state V =10V; I =25A; - 23.8 28 mΩ DSon GS D resistance T =25°C j Avalanche ruggedness E non-repetitive I =34A; V ≤25V; - - 58 mJ DS(AL)S D sup drain-source avalanche R =50Ω; V =5V; GS GS energy T =25°C; unclamped j(init)

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK7528-55A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78A hole; 3-lead TO-220AB 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 55 V DS j j V drain-gate voltage R =20kΩ - 55 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25°C - 42 A D mb T =100°C - 30 A mb I peak drain current T =25°C; pulsed - 168 A DM mb P total power dissipation T =25°C - 99 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C - 41 A S mb I peak source current pulsed; T =25°C - 163 A SM mb Avalanche ruggedness E non-repetitive drain-source I =34A; V ≤25V; R =50Ω; - 58 mJ DS(AL)S D sup GS avalanche energy V =5V; T =25°C; unclamped GS j(init) BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 2 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf455 003aaf456 100 100 Pder ID (%) (%) 80 80 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) V ≥ 5 V GS Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of mounting base temperature function of mounting base temperature 103 003aaf457 100 003aaf470 (IAD) RDS(on) = VDS / ID W(%DS)8S0 102 tp = 10 μs 60 100 μs 40 10 1 ms D.C. 20 10 ms 100 ms 1 0 1 10 102 103 20 60 100 140 180 VDS (V) Tmb (°C) T = 25 °C; I is single pulse I = 75 A mb DM D Fig 3. Safe operating area; continuous and peak drain Fig 4. Normalised drain-source non-repetitive currents as a function of drain-source voltage avalanche energy as a function of mounting-base temperature BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 3 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to mounting - - 1.5 K/W th(j-mb) base R thermal resistance from junction to ambient in free air - 60 - K/W th(j-a) 003aaf458 10 Zth(j-mb) (K/W) 1 δ = 0.5 00..21 P δ = Ttp 10−1 0.05 0.02 0 tp t T 10−2 10−6 10−4 10−2 1 102 104 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 4 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source breakdown I =0.25mA; V =0V; T =25°C 55 - - V (BR)DSS D GS j voltage I =0.25mA; V =0V; T =-55°C 50 - - V D GS j V gate-source threshold I =1mA; V =V ; T =-55°C - - 4.4 V GS(th) D DS GS j voltage I =1mA; V =V ; T =25°C 2 3 4 V D DS GS j I =1mA; V =V ; T =175°C 1 - - V D DS GS j I drain leakage current V =55V; V =0V; T =25°C - 0.05 10 µA DSS DS GS j V =55V; V =0V; T =175°C - - 500 µA DS GS j I gate leakage current V =20V; V =0V; T =25°C - 2 100 nA GSS GS DS j V =-20V; V =0V; T =25°C - 2 100 nA GS DS j R drain-source on-state V =10V; I =25A; T =175°C - - 56 mΩ DSon GS D j resistance V =10V; I =25A; T =25°C - 23.8 28 mΩ GS D j Dynamic characteristics C input capacitance V =0V; V =25V; f=1MHz; - 874 1165 pF iss GS DS T =25°C C output capacitance j - 218 261 pF oss C reverse transfer capacitance - 137 188 pF rss t turn-on delay time V =30V; R =1.2Ω; V =5V; - 14 21 ns d(on) DS L GS R =10Ω; T =25°C t rise time G(ext) j - 68 102 ns r t turn-off delay time - 83 116 ns d(off) t fall time - 43 60 ns f L internal drain inductance measured from drain lead 6 mm from - 4.5 - nH D package to centre of die; T =25°C j measured from contact screw on tab - 3.5 - nH to centre of die; T =25°C j L internal source inductance measured from source lead to source - 7.5 - nH S bond pad; T =25°C j Source-drain diode V source-drain voltage I =41A; V =0V; T =25°C - 1.1 - V SD S GS j I =25A; V =0V; T =25°C - 0.85 1.2 V S GS j t reverse recovery time I =20A; dI /dt=-100A/µs; - 45 50 ns rr S S V =-10V; V =30V; T =25°C Q recovered charge GS DS j - 88 96 nC r BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 5 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf459 003aaf460 100 70 ID 18 10 RDS(on) 6 (A) 16 9.5 (mΩ) 80 12 10.5 9.0 60 6.5 11.5 VGS (V) = 11 8.5 7 60 8.0 50 7.5 8 7.0 40 40 6.5 9 6.0 20 30 10 5.5 5.0 4.5 0 20 0 2 4 6 8 10 0 20 40 60 80 100 VDS (V) ID (A) T = 25 °C T = 25 °C j j Fig 6. Output characteristics: drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of drain current; typical values 003aaf461 003aaf462 50 100 RDS(on) (IAD) (mΩ) 80 40 60 30 40 20 20 Tj = 175 °C Tj = 25 °C 10 0 6 10 14 18 22 0 4 8 12 VGS (V) VGS (V) T = 25 °C; I = 25 A V > I x R j D DS D DSon Fig 8. Drain-source on-state resistance as a function Fig 9. Transfer characteristics: drain current as a of gate-source voltage; typical values function of gate-source voltage; typical values BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 6 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf463 003aaf464 16 2.5 gfs a (S) 12 2 8 1.5 4 1 0 0.5 0 20 40 60 80 −100 0 100 200 ID (A) Tmb (°C) V > I x R DS D DSon I = 25 A; V = 5 V D GS Fig 10. Forward transconductance as a function of Fig 11. Normalized drain-source on-state resistance drain current; typical values factor as a function of junction temperature 5 003aaf465 10−1 003aaf466 VGS(th) ID (V) (A) 4 maximum 10−2 3 typical 10−3 2 minimum 10−4 2 % typical 98 % 1 10−5 0 10−6 −100 0 100 200 0 1 2 3 4 5 Tj (°C) VGS (V) I = 1 mA; V = V T = 25 °C; V = V D DS GS j DS GS Fig 12. Gate-source threshold voltage as a function of Fig 13. Sub-threshold drain current as a function of junction temperature gate-source voltage BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 7 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf467 003aaf468 1.6 10 C VGS (nF) Ciss (V) 8 1.2 VDS = 14 V VDS = 44 V 6 Coss 0.8 4 0.4 Crss 2 0.0 0 10−2 10−1 1 10 102 0 10 20 30 VDS (V) QG (nC) V = 0 V; f = 1 MHz T = 25 °C; I = 50 A GS j D Fig 14. Input, output and reverse transfer capacitances Fig 15. Gate-source voltage as a function of gate as a function of drain-source voltage; typical charge; typical values values 003aaf469 120 IF (A) 80 40 Tj = 175 °C Tj = 25 °C 0 0.0 0.5 1.0 1.5 VSDS (V) V = 0 V GS Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 8 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A E A p A1 q mounting D1 base D L1(1) L2 Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) mLa2x. p q Q 4.5 1.39 0.9 1.3 0.7 15.8 6.4 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.27 0.6 1.0 0.4 15.2 5.9 9.7 13.5 2.79 3.6 2.7 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 03-01-22 SOT78A 3-lead TO-220AB SC-46 05-03-14 Fig 17. Package outline SOT78A (TO-220AB) BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 9 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision his tory Document ID Release date Data sheet status Change notice Supersedes BUK7528-55A v.2 20110421 Product data sheet - BUK7528_7628-55A v.1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7528-55A separated from data sheet BUK7528_7628-55A v.1. BUK7528_7628-55A v.1 20000601 Product specification - - BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 10 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior NXP Semiconductors does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment, modifications or additions. NXP Semiconductors does not give any nor in applications where failure or malfunction of an NXP Semiconductors representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or information included herein and shall have no liability for the consequences of severe property or environmental damage. NXP Semiconductors accepts no use of such information. liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk. with the same product type number(s) and title. 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It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of 9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their Limited warranty and liability — Information in this document is believed to applications and products. be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or NXP Semiconductors does not accept any liability related to any default, completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the consequences of use of such information. customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary In no event shall NXP Semiconductors be liable for any indirect, incidental, testing for the customer’s applications and products using NXP punitive, special or consequential damages (including - without limitation - lost Semiconductors products in order to avoid a default of the applications and profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party replacement of any products or rework charges) whether or not such customer(s). NXP does not accept any liability in this respect. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper) whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the with the Terms and conditions of commercial sale of NXP Semiconductors. BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 11 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET Characteristics sections of this document is not warranted. Constant or Export control — This document as well as the item(s) described herein may repeated exposure to limiting values will permanently and irreversibly affect be subject to export control regulations. Export might require a prior the quality and reliability of the device. authorization from national authorities. Terms and conditions of commercial sale — NXP Semiconductors 9.4 Trademarks products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Notice: All referenced brands, product names, service names and trademarks agreement is concluded only the terms and conditions of the respective are the property of their respective owners. agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, purchase of NXP Semiconductors products by customer. FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, No offer to sell or license — Nothing in this document may be interpreted or QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, construed as an offer to sell products that is open for acceptance or the grant, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK7528-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 21 April 2011 12 of 13

BUK7528-55A NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 April 2011 Document identifier: BUK7528-55A