BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits (cid:132) AEC Q101 compliant (cid:132) Suitable for thermally demanding environments due to 175 °C rating (cid:132) Suitable for intermediate level gate drive sources 1.3 Applications (cid:132) 12 V Automotive systems (cid:132) Start-Stop micro-hybrid applications (cid:132) Electric and electro-hydraulic power (cid:132) Transmission control steering (cid:132) Ultra high performance power (cid:132) Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T ≥25°C; T ≤175°C - - 30 V DS j j voltage I drain current V =10V; T =25°C; [1] - - 100 A D GS mb see Figure 1 P total power T =25°C; see Figure 2 - - 204 W tot mb dissipation Static characteristics R drain-source V =10V; I =25A; - 2.4 2.8 mΩ DSon GS D on-state T =25°C; see Figure 11 j resistance

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100A; V ≤30V; - - 501 mJ DS(AL)S D sup drain-source R =50Ω; V =10V; GS GS avalanche energy T =25°C; unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A; V =24V; - 33.3 - nC GD D DS V =10V; see Figure 13; GS see Figure 14 [1] Continuous current is limited by package. 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3 S source G mb D mounting base; connected to drain mbb076 S 2 1 3 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BUK662R5-30C D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 2 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 4. Limiting values Table 4. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T ≥25°C; T ≤175°C - 30 V DS j j V gate-source voltage DC [1] -16 16 V GS Pulsed [2] -20 20 V I drain current T =25°C; V =10V; see Figure 1 [3] - 100 A D mb GS T =100°C; V =10V; see Figure 1 [3] - 100 A mb GS I peak drain current T =25°C; t ≤10µs; pulsed; - 783 A DM mb p see Figure 3 P total power dissipation T =25°C; see Figure 2 - 204 W tot mb T storage temperature -55 175 °C stg T junction temperature -55 175 °C j Source-drain diode I source current T =25°C [3] - 100 A S mb I peak source current t ≤10µs; pulsed; T =25°C - 783 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =100A; V ≤30V; R =50Ω; - 501 mJ DS(AL)S D sup GS avalanche energy V =10V; T =25°C; unclamped GS j(init) E repetitive drain-source [4][5][6] - - J DS(AL)R avalanche energy [1] -16V accumulated duration not to exceed 168 hrs. [2] Accumulated pulse duration not to exceed 5 mins. [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [5] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [6] Refer to application note AN10273 for further information. BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 3 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 200 003aae559 120 03na19 I D (A) Pder 160 (%) 80 120 (1) 80 40 40 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (°C) Tmb (°C) Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature 103 003aae530 I (AD) Limit RDSon = VDS / ID tp =10 μs 102 100 μs DC 1 ms 10 10 ms 100 ms 1 10-1 10-1 1 10 102 V (V) DS T = 25°C; I is a single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 4 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance see Figure 4 - - 0.74 K/W th(j-mb) from junction to mounting base 003aae531 1 Zth(j-mb) δ = 0.5 (K/W) 0.2 10−1 0.1 0.05 0.02 10−2 P δ = Ttp single shot tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 5 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 6. Characteristics Table 6. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source I =250µA; V =0V; T =25°C 30 - - V (BR)DSS D GS j breakdown voltage I =250µA; V =0V; T =-55°C 27 - - V D GS j V gate-source threshold I =1mA; V =V ; T =25°C; 1.8 2.3 2.8 V GS(th) D DS GS j voltage see Figure 9; see Figure 10 I =1mA; V =V ; T =-55°C; - - 3.3 V D DS GS j see Figure 10 I =2.5mA; V =V ; T =175°C; 0.8 - - V D DS GS j see Figure 10 I drain leakage current V =30V; V =0V; T =25°C - 0.02 1 µA DSS DS GS j V =30V; V =0V; T =175°C - - 500 µA DS GS j I gate leakage current V =0V; V =20V; T =25°C - 2 100 nA GSS DS GS j V =0V; V =-20V; T =25°C - 2 100 nA DS GS j R drain-source on-state V =10V; I =25A; T =25°C; - 2.4 2.8 mΩ DSon GS D j resistance see Figure 11 V =4.5V; I =25A; T =25°C; - 3.6 4.8 mΩ GS D j see Figure 11 V =5V; I =25A; T =25°C; - 3.1 3.9 mΩ GS D j see Figure 11 V =10V; I =25A; T =175°C; - - 5.3 mΩ GS D j see Figure 12; see Figure 11 Dynamic characteristics Q total gate charge I =25A; V =24V; V =10V; - 114 - nC G(tot) D DS GS see Figure 13; see Figure 14 I =25A; V =24V; V =5V; - 66 - nC D DS GS see Figure 13; see Figure 14 Q gate-source charge I =25A; V =24V; V =10V; - 18 - nC GS D DS GS see Figure 13; see Figure 14 Q gate-drain charge - 33.3 - nC GD C input capacitance V =0V; V =25V; f=1MHz; - 5216 6960 pF iss GS DS T =25°C; see Figure 15 C output capacitance j - 896 1100 pF oss C reverse transfer - 537 740 pF rss capacitance t turn-on delay time V =25V; R =1Ω; V =10V; - 22 - ns d(on) DS L GS R =10Ω t rise time G(ext) - 59 - ns r t turn-off delay time - 209 - ns d(off) t fall time - 113 - ns f L internal drain from upper edge of drain mounting base - 3.5 - nH D inductance to centre of die; T =25°C j L internal source from source lead to source bond pad; - 7.5 - nH S inductance T =25°C j BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 6 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode V source-drain voltage I =25A; V =0V; T =25°C; - 0.8 1.2 V SD S GS j see Figure 16 t reverse recovery time I =20A; dI /dt=-100A/µs; V =0V; - 50 - ns rr S S GS V =25V Q recovered charge DS - 73 - nC r 003aae532 003aae780 150 240 (gSfs) ID 10.0 6.0 5.0 VGS (V) = 4.5 (A) 120 180 90 120 4.0 60 3.8 60 3.6 30 3.4 3.2 0 0 0 30 60 90 120 150 0 0.5 1 1.5 2 ID (A) VDS (V) T = 25°C; V = 25 V j DS Fig 5. Forward transconductance as a function of Fig 6. Output characteristics: drain current as a drain current; typical values function of drain-source voltage; typical values 003aae781 003aae783 200 10 R I DSon D (mΩ) (A) 8 150 6 100 4 50 T = 175 °C T = 25 °C 2 j j 0 0 0 2 4 6 0 5 10 15 20 V (V) V (V) GS GS Fig 7. Transfer characteristics: drain current as a Fig 8. Drain-source on-state resistance as a function function of gate-source voltage; typical values of gate-source voltage; typical values BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 7 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 10-1 003aad806 4 003aae542 ID VGS(th) (A) (V) 10-2 3 max @1mA min typ max 10-3 2 typ @1mA 10-4 min @2.5mA 1 10-5 10-6 0 0 1 2 3 4 -60 0 60 120 180 VGS (V) Tj (°C) Fig 9. Sub-threshold drain current as a function of Fig 10. Gate-source threshold voltage as a function of gate-source voltage junction temperature 10 003aae782 2 03aa27 RDSon VGS (V) = 3.8 4.0 4.5 (mΩ) a 8 1.5 6 1 5.0 4 6.0 0.5 2 10.0 0 0 0 60 120 180 240 −60 0 60 120 180 ID (A) Tj (°C) Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance of drain current; typical values factor as a function of junction temperature BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 8 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 003aae537 10 VGS (V) VDS 8 ID 6 VGS(pl) VDS = 14 V VDS = 24 V VGS(th) 4 VGS QGS1 QGS2 2 QGS QGD QG(tot) 0 0 30 60 90 120 003aaa508 QG (nC) T = 25°C and I = 25 A j D Fig 13. Gate charge waveform definitions Fig 14. Gate-source voltage as a function of gate charge; typical values 104 003aae538 150 003aae540 IS C (pF) Ciss (A) 120 90 103 Coss 60 Crss Tj = 175 °C 30 Tj = 25 °C 102 0 10−2 10−1 1 10 102 0 0.3 0.6 0.9 1.2 VDS (V) VSD (V) V = 0 V; f = 1 MHz V = 0 V GS GS Fig 15. Input, output and reverse transfer capacitances Fig 16. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values values BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 9 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 D1 mounting base D HD 2 Lp 1 3 b c e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) D UNIT A A1 b c max. D1 E e Lp HD Q 4.50 1.40 0.85 0.64 1.60 10.30 2.90 15.80 2.60 mm 11 2.54 4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 05-02-11 SOT404 06-03-16 Fig 17. Package outline SOT404 (D2PAK) BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 10 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK662R5-30C v.2 20101014 Product data sheet - BUK662R5-30C v.1 Modifications: • Status changed from objective to product. BUK662R5-30C v.1 20100923 Objective data sheet - - BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 11 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive Draft — The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment, modifications or additions. Nexperia does not give any nor in applications where failure or malfunction of a Nexperia representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or information included herein and shall have no liability for the consequences of severe property or environmental damage. Nexperia accepts no use of such information. liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the Short data sheet — A short data sheet is an extract from a full data sheet customer’s own risk. with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and Quick reference data — The Quick reference data is an extract of the full information. For detailed and full information see the relevant full data product data given in the Limiting values and Characteristics sections of this sheet, which is available on request via the local Nexperia sales document, and as such is not complete, exhaustive or legally binding. office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no Product specification — The information and data provided in a Product representation or warranty that such applications will be suitable for the data sheet shall define the specification of the product as agreed between specified use without further testing or modification. Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, Customers are responsible for the design and operation of their applications shall an agreement be valid in which the Nexperia product is and products using Nexperia products, and Nexperia deemed to offer functions and qualities beyond those described in the accepts no liability for any assistance with applications or customer product Product data sheet. design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of 9.3 Disclaimers customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their Limited warranty and liability — Information in this document is believed to applications and products. be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or Nexperia does not accept any liability related to any default, completeness of such information and shall have no liability for the damage, costs or problem which is based on any weakness or default in the consequences of use of such information. customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary In no event shall Nexperia be liable for any indirect, incidental, testing for the customer’s applications and products using Nexperia punitive, special or consequential damages (including - without limitation - lost products in order to avoid a default of the applications and profits, lost savings, business interruption, costs related to the removal or the products or of the application or use by customer’s third party replacement of any products or rework charges) whether or not such customer(s). Nexperia does not accept any liability in this respect. damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent Notwithstanding any damages that customer might incur for any reason damage to the device. Limiting values are stress ratings only and (proper) whatsoever, Nexperia’s aggregate and cumulative liability towards operation of the device at these or any other conditions above those given in customer for the products described herein shall be limited in accordance the Recommended operating conditions section (if present) or the with the Terms and conditions of commercial sale of Nexperia. Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect Right to make changes — Nexperia reserves the right to make the quality and reliability of the device. changes to information published in this document, including without limitation specifications and product descriptions, at any time and without Terms and conditions of commercial sale — Nexperia notice. This document supersedes and replaces all information supplied prior products are sold subject to the general terms and conditions of commercial to the publication hereof. sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 12 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET agreement is concluded only the terms and conditions of the respective 9.4 Trademarks agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the Notice: All referenced brands, product names, service names and trademarks purchase of Nexperia products by customer. are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK662R5-30C All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 — 14 October 2010 13 of 14

BUK662R5-30C Nexperia N-channel TrenchMOS intermediate level FET 11. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10 Contact information. . . . . . . . . . . . . . . . . . . . . .13 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 14 October 2010