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  • 型号: BU9829GUL-WE2
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BU9829GUL-WE2产品简介:

ICGOO电子元器件商城为您提供BU9829GUL-WE2由ROHM Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供BU9829GUL-WE2价格参考¥6.51-¥13.77以及ROHM SemiconductorBU9829GUL-WE2封装/规格参数等产品信息。 你可以下载BU9829GUL-WE2参考资料、Datasheet数据手册功能说明书, 资料中有BU9829GUL-WE2详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)

描述

IC EEPROM 16KBIT 5MHZ 9VCSP50L1

产品分类

存储器

品牌

Rohm Semiconductor

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

BU9829GUL-WE2

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=30341

供应商器件封装

9-VCSP50L1(1.6x1.6)

其它名称

BU9829GUL-WE2CT

包装

剪切带 (CT)

存储器类型

EEPROM

存储容量

16K (2K x 8)

封装/外壳

9-UFBGA,WLCSP

工作温度

-30°C ~ 85°C

接口

SPI 串行

标准包装

1

格式-存储器

EEPROMs - 串行

电压-电源

1.6 V ~ 3.6 V

速度

5MHz

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PDF Datasheet 数据手册内容提取

Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9829GUL-W (16Kbit) ●General Description BU9829GUL-W is Serial EEPROM built-in LDO regulator by SPI BUS interface. ●Features ○EEPROM PART ●Package W(Typ.) x D(Typ.) x H(Max.) (cid:132) 2,048 words×8 bits architecture serial EEPROM (cid:132) Wide operating voltage range (1.6V to 3.6V) (cid:132) Serial Peripheral Interface (cid:132) Self-timed write cycle with automatic erase (cid:132) Low Power consumption (cid:190) Write (3.6V) : 1.5mA (Typ.) (cid:190) Read (3.6V) : 0.5mA (Typ.) (cid:190) Standby (3.6V) : 0.1µA (Typ.) (cid:132) Auto-increment of registers address for Read mode (cid:132) 32 byte Page Write mode VCSP50L1 (cid:132) DATA security 1.74mm x 1.65mm x 0.55mm (cid:190) Defaults to power up with write-disabled state (cid:190) Software instructions for write-enable/disable (cid:190) Block writes protection by status register (cid:190) Write inhibit at low Vcc (cid:132) Initial data FFh in all address, 00h in status register and 10 in VSET [1:0]. (cid:132) Data retention: 10 years (cid:132) Endurance : 100,000 erase/write cycles ○LDO REGULATOR PART (cid:132) Low power consumption (cid:190) Standby (3.6V) : 0.1 µA (Typ.) (cid:190) Operation (3.6V) : 0.1mA (Typ.) (cid:132) Power on/off by enable pin (cid:132) Initial LDO output voltage 2.9V (cid:132) Setting output voltage by EEPROM command (VSET WRITE) ●Typical Application Circuit Vcc2(3.3V) Vcc1(1.8V) RPU BU9829GUL-W RPU Vcc1 CSB SCK SO SI Vcc2 (0.1µF) (0.1µF) LDOEN VOUT GND CL C C RPD RPD ○Product structure : Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100400-1-2 ©2012 ROHM Co., Ltd. All rights reserved. 1/23 TSZ22111・14・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Block Diagram CSB INSTRUCTION VOLTAGE DECODE DETECTION CONTROL CLOCK SCK GENERATION WRITE HIGH VOLTAGE INHIBITION GENERATOR SI INSTRUCTION REGISTER ADDRESS 11bit ADDRESS 11bit REGISTER DECODER 16,384 bit EEPROM DATA 8bit R/W 8bit SO REGISTER AMP 2bit + B.R LDOEN VOUT AMP VOUT SETTING REGISTER RESISTOR ●Pin Configuration (BOTTOM VIEW) C C1 C2 C3 B B1 B2 B3 INDEX POST A A1 A2 A3 1 2 3 ●Pin Descriptions Land Pin I/O Function No. Name A1 Vcc1 - Power Supply (EEPROM) A2 CSB IN Chip Select Control A3 SCK IN Serial Data Clock Input B1 Vcc2 - Power Supply (LDO) B2 SI IN Start Bit, Op.code, Address, Serial Data Input B3 SO OUT Serial Data Output C1 V OUT LDO Regulator Output OUT C2 GND - Ground (0V) C3 LDOEN IN LDO Regulator Enable www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 2/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Rating Unit Remarks Vcc1(EEPROM) Supply Voltage -0.3 to 4.5 V Vcc2(LDO) Power Dissipation Pd 220 mW When using at Ta=25℃ or higher, 2.2mW to be reduced per 1℃ Storage Temperature Tstg -65 to 125 ℃ Operating Topr -30 to 85 ℃ Temperature Terminal Voltage - -0.3 to Vcc+0.3 V ●Memory cell characteristics (Ta=25℃, Vcc1=1.6V to 3.6V) Limits Parameter Unit Min. Typ. Max. Write/Erase Cycle *1 100,000 - - Times Data Retention *1 10 - - Year *1 : Not 100% tested ●EEPROM Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc1 1.6 to 3.6 V Input Voltage VIN 0 to Vcc1 ●LDO regulator Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc2 2.9 to 3.6 V Input Voltage VIN 0 to Vcc2 ●Input/output capacity (Ta=25℃, Frequency=5MHz) Limits Parameter Symbol Unit Conditions Min. Max. Input Capacitance *1 C - 8 pF V =GND IN IN Output Capacitance*1 C - 8 pF V =GND OUT OUT *1:Not 100% TESTED ●EEPROM DC operating characteristics (Unless otherwise specified, Ta=-30℃ to 85℃, Vcc1=1.6V to 3.6V) Limits Parameter Symbol Unit Test condition Min. Typ. Max. "H" Input Voltage1 VIH1 0.7xVcc1 - Vcc1+0.3 V 2.5≦Vcc1≦3.6V "H" Input Voltage2 VIH2 0.75xVcc1 - Vcc1+0.3 V 1.6≦Vcc1<2.5V "L" Input Voltage1 VIL1 -0.3 - 0.3xVcc1 V 2.5V≦Vcc1≦3.6V "L" Input Voltage2 VIL2 -0.3 - 0.25xVcc1 V 1.6V≦Vcc1<2.5V "L" Output Voltage1 VOL1 0 - 0.2 V IOL=1.0mA , 2.5V≦Vcc1≦3.6V "L" Output Voltage2 VOL2 0 - 0.2 V IOL=1.0mA , 1.6V≦Vcc1<2.5V "H" Output Voltage1 VOH1 Vcc1-0.2 - Vcc1 V IOH=-0.4mA , 2.5V≦Vcc1≦3.6V "H" Output Voltage2 VOH2 Vcc1-0.2 - Vcc1 V IOH=-100µA , 1.6V≦Vcc1<2.5V Input Leakage Current ILI -1 - 1 µA VIN=0 to Vcc1 Output Leakage Current ILO -1 - 1 µA VOUT=0 to Vcc1 , CSB=Vcc1 Vcc1=1.8V , fSCK =2MHz, tE/W=5ms ICC1 - - 1.5 mA Byte Write, Page Write, Write Status Register Operating Current Write Vcc1=2.5V , fSCK =5MHz,tE/W=5ms ICC2 - - 2.0 mA Byte Write, Page Write, Write Status Register Vcc1=1.8V , fSCK=2MHz , SO=OPEN ICC3 - - 0.2 mA Read, Read Status Register Operating Current Read Vcc1=2.5V , fSCK=5MHz,SO=OPEN ICC4 - - 0.6 mA Read, Read Status Register Vcc1=3.6V , CSB=Vcc1 , SCK , Standby Current ISB - - 1.0 µA SI=Vcc1/GND ,SO=OPEN www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 3/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●EEPROM AC operating characteristics (Ta=-30℃ to 85℃) 1.6≦VCC1<1.8V 1.8≦VCC1≦3.6V Parameter Symbol Unit Min. Typ. Max. Min. Typ. Max. SCK clock Frequency fSCK - - 2.5 - - 5 MHz SCK High Time tSCKWH 200 - - 80 - - ns SCK Low Time tSCKWL 200 - - 80 - - ns CSB High Time tCS 200 - - 90 - - ns CSB Setup Time tCSS 150 - - 60 - - ns CSB Hold Time tCSH 150 - - 60 - - ns SCK Setup Time tSCKS 50 - - 50 - - ns SCK Hold Time tSCKH 50 - - 50 - - ns SI Setup Time tDIS 50 - - 20 - - ns SI Hold Time tDIH 50 - - 20 - - ns Output Data Delay Time tPD - - 100 - - 80 ns Output Hold Time tOH 0 - - 0 - - ns Output Disable Time *1 tOZ - - 200 - - 80 ns SCK Rise Time *1 tRC - - 1 - - 1 µs SCK Fall Time *1 tFC - - 1 - - 1 µs Output Rise Time *1 tRO - - 50 - - 50 ns Output Fall Time *1 tFO - - 50 - - 50 ns Write Cycle Time tE/W - - 5 - - 5 ms Wait Time From Vcc1 ON To tON 15 - - 15 - - ms EEPROM Command *1 : Not 100% tested ●Synchronous data input/output timing tON tCS VCC1 tCSS CSB tCSH tSCKH CSB tSCKS tSCKWL tSCKWH tRC tFC SCK SCK tDIS tDIH SI tPD tOH tRO,tFO tOZ SI Hi-Z SO SO Hi-Z Figure 1. Input timing Figure 2. Input and output timing SI data is latched into the chip at the rising edge of SCK clock. SO data toggles at the falling edge of SCK clock. Address and data must be transferred from MSB. Output data toggles from MSB. ●AC condition Limits Parameter Symbol Unit Min. Typ. Max. Load Capacitance CL - - 100 pF Input Rise times - - - 50 ns Input Fall times - - - 50 ns Input Pulse Voltage - 0.25Vcc1/0.75Vcc1 V Input and Output Timing Reference Voltages - 0.3VCc1/0.7Vcc1 V www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 4/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●LDO regulator DC operating characteristics (Unless otherwise specified Ta=-30℃ to 85℃) Specification Parameter Symbol Unit test condition Min. Typ. Max. Output Voltage1-1 VOUT1-1 2.9 3.0 3.2 V 3.2V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[1:1] Output Voltage1-2 VOUT1-2 2.9 3.0 3.1 V 3.2V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[1:1] Output Voltage2-1 VOUT2-1 2.8 2.9 3.1 V 3.1V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[1:0] Output Voltage2-2 VOUT2-2 2.8 2.9 3.0 V 3.1V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[1:0] Output Voltage3-1 VOUT3-1 2.7 2.8 3.0 V 3.0V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[0:1] Output Voltage3-2 VOUT3-2 2.7 2.8 2.9 V 3.0V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[0:1] Output Voltage4-1 VOUT4-1 2.6 2.7 2.9 V 2.9V≦Vcc2≦3.6V, IOUT=0, 2mA, VSET=1, 0=[0:0] Output Voltage4-2 VOUT4-2 2.6 2.7 2.8 V 2.9V≦Vcc2≦3.6V, IOUT=2, 10mA, VSET=1, 0=[0:0] Operating Current ICC - - 200 µA Vcc2=3.6V, IOUT=0A Standby Current ISB - - 1.0 µA Vcc2=3.6V, IOUT=0A, LDOEN=GND “H” Input Voltage VIH 1.4 - Vcc2+0.3 V 2.9V≦Vcc2≦3.6V “L” Input Voltage VIL -0.3 - 0.6 V 2.9V≦Vcc2≦3.6V ●LDO regulator AC operating characteristics Specification Parameter Symbol Unit Test condition Min. Typ. Max. Vcc1 Rise Time tVCC1 - - 5 msec VCC1 x 0%→VCC1 x 95% point LDOEN Wait Time tLDOEN 15 - - msec VCC1 x 0%point→ LDOEN=High ●Output voltage depend on VSET bit The 2bit data are stored into the VSET memory and output voltage change among VOUT1 to VOUT4. VSET data are written into non-volatile memory array. Initial VSET data is 1, 0 in VSET[1:0] and VOUT is 2.9V. STEP VOUT (typ.) [V] VSET1 VSET0 VOUT1 3.0 1 1 VOUT2 2.9 1 0 VOUT3 2.8 0 1 VOUT4 2.7 0 0 ●Input power supply regulation timing ①Using EEPROM PART In case of using EEPROM part, be sure to raise Vcc1 up to operating voltage. In this time, Vcc2 has no connection with operating. Vcc1 EEPREOEPMR OM部電源 Power Supply Vcc2 LDOレ ギュレータ部電源 LPDoOw erre gSuulpaptolyr NOopt動e r 作at不in可g EEOPRpOeMr動at作in可g能範囲 NO動opt作e r 不at可ing EEPOROpMe動ra作tin可g能範囲 動NOo作pte不 r a可ting Figure 3. Using EEPROM Part, Regulation Timing ②Using LDO regulator part In case of using LDO regulator part, be sure to raise Vcc1 and Vcc2 up to operating voltage. After rising Vcc1, wait 15msec and rising LDOEN. When LDOEN is raised, Vcc1 must be operating voltage. tVcc1:MAX 5msec tVcc1:MAX 5msec Vcc1 EEPROM Power Supply Vcc2 tLDOEN : MIN 15msec LDO regulator tLDOEN : MIN 15msec Power Supply LDOEN Not Operating Not Operating Not Operating Operating Operating Figure 4. Using LDO Regulator Part, Regulation Timing www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 5/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves (The following characteristic data are typical values.) Figure 5. "H" input voltage VIH (EEPROM) Figure 6. “L" input voltage VIL (EEPROM) Figure 7. "L" output voltage VOL Figure 8. “H" output voltage VOH www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 6/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 9. Input leak current ILI Figure 10. Output leak current ILO Figure 11. Current consumption at WRITE operation ICC1 Figure 12. Consumption Current at READ operation ICC3 www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 7/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 14. SCK frequency fSCK Figure 13. Standby operation ISB (EEPROM) Figure 15. SCK high time tSCKWH Figure 16. SCK low time tSCKWL www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 8/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 18. CSB setup time tCSS Figure 17. CSB high time tCS Figure 19. CSB hold time tCSH Figure 20. SI setup time tDIS www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 9/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 21. SI hold time tDIH Figure 22. Data output delay time tPD Figure 23. Output disable time tOZ Figure 24. Write cycle time tE/W www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 10/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 25. Standby operation ISB (LDO) Figure 26. "H" input voltage VIH (LDO) Figure 27. "L" input voltage VIL (LDO) Figure 28. Vcc1 rise time tVcc1 www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 11/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Typical Performance Curves‐Continued Figure 29. Vout response (LDO) Figure 30. Current consumption ICC (LDO) www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 12/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Functional description ○Status Register The device has status register. Status register consists of 8bits and is shown following parameters. 2 bits (BP0 and BP1) are set by “Write Status Register” commands, which are non-volatile. Specification of endurance and data retention are as well as memory array. WEN bit is set by “Write Enable” and “Write Disable” commands. After power become on, the device is disable mode. R/B bit is a read-only and status bit. The device is clocked out value of the status register by “Read Status Register” command input. Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 0 0 0 0 BP1 BP0 WEN R/B Bit Definition BP1 BP0 Block Write Protection Block write protection for memory array BP0/BP1 0 0 NONE (EEPROM) 0 1 600h-7FFh Write enable/disable status bit 1 0 400h-7FFh WEN WEN=0 : write disable WEN=1 : write enable 1 1 000h-7FFh READY/BUSY status bit R/B R/B=0 : READY R/B=1 : BUSY ●Instruction code Instruction Operation Op.Code Address WREN Write enable 0000 0110 - WRDI Write disable 0000 0100 - READ Read data from memory array 0000 0011 A10 to A0 WRITE Write data to memory array 0000 0010 A10 to A0 RDSR Read status register 0000 0101 - WRSR Write status register 0000 0001 - VSET_READ Read VSET data 0000 0011 800h VSET_WRITE Write VSET data 0000 0010 800h ●Timing chart 1. WRITE ENABLE 2. WRITE DISABLE CSB CSB SCK 0 1 2 3 4 5 6 7 SCK 0 1 2 3 4 5 6 7 SI 0 0 0 0 0 1 1 0 SI 0 0 0 0 0 1 0 0 Hi-Z Hi-Z SO SO Figure 31. WRITE ENABLE CYCLE TIMING Figure 32. WRITE DISABLE CYCLE TIMING ○The device has both of the enable and disable mode. After “Write Enable” is executed, the device becomes in the enable mode. After “Write Disable” is executed, the device becomes in the disable mode. After CSB goes low, each of Op.code is recognized at the rising edge of 7th clock. Each of instructions is effective inputting seven or more SCK clocks. This “Write Enable” instruction must be proceeded before the any write commands. The device ignores inputting the any write commands in the disable mode. Once the any write commands is executed in the enable mode, the device becomes the disable mode. After the power become on, the device is in the disable mode. www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 13/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) 3.READ The data stored in the memory are clocked out after “Read” instruction is received. After CSB goes low, the address need to be sent following by Op.code of “Read”. The data at the address specified are clocked out from D7 to D0, which is start at the falling edge of 23th clock. This device has the auto-increment feature that provides the whole data of the memory array with one read command, outputs the next address data following the addressed 8bits of data by keeping SCK clocking. When the highest address is reached, the address counter rolls over to the lowest address allowing the continuous read cycle. CSB ~~ ~~ ~~ SCK 0 1 2 3 4 5 6 7 8 ~~ 14 ~~ 23 24 30 ~~ ~~ ~~ SI 0 0 0 0 0 0 1 1 * * 0 A10 A1 A0 ~~ ~~ ~~ ~~ SO Hi-Z ~~ ~~ D7 D6 D2 D1 D0 ~~ Figure 33. READ CYCLE TIMING *=Don't care 4. WRITE This “Write” command writes 8bits of data into the specified address. After CSB goes low, the address need to be sent following by Op.code of “Write”. Between the rising edge of the 29th clock and it of the 30th clock, the rising edge of CSB initiates high voltage cycle, which writes the data into non-volatile memory array, but the command is cancelled if CSB is high except that period. It takes maximum 5ms in high voltage cycle (tE/W). The device does not receive any command except for “Read Status Register” command during this high voltage cycle. This device is capable of writing the data of maximum 32byte into memory array at the same time, which keep inputting two or more byte data with CSB “L” after 8bits of data input. For this Page Write commands, the eight higher order bits of address are set, the six low order address bits are internally incremented by 5bits of data input. If more than 16 words, are transmitted the address counter “roll over”, and the previous transmitted data is overwritten. CSB ~~ ~~ ~~ ~~ ~~ SCK 0 1 2 3 4 5 6 7 8 14 23 24 30 31 ~~ ~~ ~~ ~~ SI 0 0 0 0 0 0 1 0 * 0 A10 A1 A0 D7 D6 D2 D1 D0 ~~ ~~ ~~ SO Hi-Z ~~ ~~ ~~ *=Don't care Figure 34. WRITE CYCLE TIMING 5. RDSR (READ STATUS REGISTER) The data stored in the status register is clocked out after “Read Status Register” instruction is received. After CSB goes low, Op.colde of “Read Status Register” need to sent. The data stored in the status register is clocked out of the device on the falling edge of 7th clock. Bit7, Bit6, Bit5 and Bit4 in the status register are read as 0. This device has the auto-increment feature as well as “Read” that output the 8bits of the same data following it to keep SCK clocking. It is possible to see ready and busy state by executing this command during tE/W. If more than 16 words, are transmitted the address counter “roll over” and the previous transmitted data is overwritten. CSB SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SI 0 0 0 0 0 1 0 1 Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 SO 0 0 0 0 BP1 BP0 WEN R/B Hi-Z Figure 35. READ STATUS REGISTER CYCLE TIMING www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 14/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) 6.WRSR (WRITE STATUS RESISTER) This “Write Status Register” command writes the data, two (BP1, BP0) of the eight bits, into the status register. Write protection is set by BP1 and BP0 bits. After CSB goes low, Op.code of “Read Status Register” need to sent. Between the rising edge of the 15th clock and it or the 16th clock, the rising edge of CSB initiates high voltage cycle, which writes the data into non-volatile memory array, but the command is cancelled if CSB is high except that period. It takes maximum 5ms in high voltage cycle (tE/W) as well as “Write”. Block write protection is determined by BP1 and BP0 bits, which is selected from quarter, half and the entire memory array. (Refer to BLOCK WRITE PROTECTION of Page 13.) CSB SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 SI 0 0 0 0 0 1 0 1 * * * * BP1 BP0 * * SO Hi-Z * Don’t care Figure 36. WRITE STATUS REGISTER WRITE CYCLE TIMING 7. VSET READ The VSET data stored in the memory are clocked out after “VSET Read” instruction set address 800h is received. After CSB goes low, the address (800h) need to be sent following by Op.code of “Read”. 0 are clocked out from D7 to D2 and the VSET data are clocked out from D1 to D0, which is start at the falling edge of 23th clock. CSB SCK 0 1 2 3 4 5 6 7 8 12 13 23 24 30 SI 0 0 0 0 0 0 1 1 * * 1 0 0 0 SO Hi-Z 0 0 0 0 VSET VSET 1 0 * Don’t care Figure 37. VSET READ CYCLE TIMIING 8. VSET WRITE This “Write” command set address 800h writes VSET data into VSET1 and VSET0 memory array. After CSB goes low, the address (800h) and VSET data need to be sent following by Op.code of “VSET Write”. Between the rising edge of the 29th clock and it of the 30th clock, the rising edge of CSB initates high voltage cycle, which writes the data into non-volatile memory array, but the command is cancelled if CSB is high except that period. It takes maximum 5ms in high voltage cycle (tE/W). The device does not receive any command except for “Read Status Register” command during this high voltage cycle. CSB SCK 0 1 2 3 4 5 6 7 8 12 13 23 24 30 31 SI 0 0 0 0 0 0 1 0 * * 1 0 0 0 0 * * * * VSET VSET 1 0 SO Hi-Z * Don’t care Figure 38. VSET WRITE CYCLE TIMING www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 15/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●EEPROM soft ware ○READ, VSET_READ, RDSR Command cancel Cancel of these commands is possible by changing CSB pin to “HIGH” in all sections. OPECODE ADDRESS DATA OPECODE DATA 8bit 8bit 8bit 8bit 8bit Cancel is possible Cancel is possible Figure 39. READ, VSET_READ Cancel Timing Figure 40. RDSR Cancel Timing ○WRITE, PAGE_WRITE, VSET_WRITE, WRSR Command cancel Cancel of these write command is possible by changing CSB pin to “HIGH” in opecode, address and data input sections (section a to b), but it is impossible after data input section (section c to d), if Vcc1 is OFF during tE/W, please write again because write data is not guaranteed in specified address, if SCK and CSB rise at the same time in section C, command is instability. It is recommend to rise CSB in “SCK=L” section. OPECODE ADDRESS DATA(n) tE/W SCK 8bit 8bit 8bit a b d SI D7 D6 D5 D4 D3 D2 D1 D0 AN ENLARGEMENT c b c Figure 41. WRITE, PAGE_WRITE, VSET_WRITE READ VSET_READ Cancel Timing OPECODE DATA(n) tE/W SCK 14 15 16 17 8bit 8bit 8bit a b d AN ENLARGEMENT SI D1 D0 c b c d Figure 42. WRSR Cancel Timing ○WREN, WRDI command cancel Cancel of these commands is possible by changing CSB pin to “HIGH” of opecode to rising 8 clk, but it is impossible after rising 8 clk. In the case, please send WREN or WRDI cancel timing command again. OPECODE 7 8 9 8bit AN ENLARGEMENT a b a b Figure 43. WREN, WRDI Cancel Timing ●Data polling If RDSR command is carried out daring tE/W, according to out put data (R/B bit), to monitor READY/BUSY state is possible. Because of this, it is possible to send next command earlier than regular programming time (tE/W MAX=5ms). If R/B bit is “1”, EEPROM’s state is “BUSY”. If this becomes “0”, it is possible to send next command to change EEPROM to “READY” state. Status register data read by this command in tE/W is not data written by WRSR command but old data before. Status register data in each section is shown below. During WRSR Command(tE/W) BUSY READY CSB SCK READ STATUS WRITE STATUS READ STATUS READ STATUS READ STATUS SI REGISTOR REGISTOR REGISTOR REGISTOR REGISTOR SO a=0 Ch b=(0 0h) c=0 Fh d=0 Ch e=0 0h Figure 44. Status register data in each section www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 16/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●EEPROM part 1. Hardware Connection of EEPROM EEPROM may have malfunction owing to noise signal for input pin, and movement in the low voltage region at power ON/OFF. These malfunctions may occur, especially at min voltage limit of EEPROM or below. To avoid this, please note about hardware connection showed as follows. 1.1 Input Terminals Input equivalent circuits of CSB, SCK and SI are showed Figure 45, 46. Input terminal is connected between CMOS schmitt trigger input circuit and input protection circuit. These pin are not pull up or pull down, therefore please don’t input Hi-Z in use. And please make CSB “HIGH” in the low voltage region at power ON/OFF. If CSB is "LOW" at power ON/OFF, malfunction may occur. To make other input terminals pull up or pull down is recommendable. CSB SCK, SI SO Figure 45. CSB terminals Figure 46. SCK, SI terminals Figure 47. SO terminals equivalent circuit equivalent circuit equivalent circuit 1.2 Output Terminals Output equivalent circuit of so is showed Figure 47. This output terminal is 3 states buffer. The data is output from so at output timing by READ command, so is Hi-z except this timing. If EEPROM malfunction occur by Hi-z input of the microcontroller port connected with so, please make so pull up or pull down. If it doesn’t affected the microcontroller movement to make so open, it is no problem. Load capacity of so disturb high speed movement of EEPROM. If this load capacity is 100pF or below, BU9829GUL-W can move in 2.5MHz (Vcc1=1.6V to 1.8V) or 5MHz (Vcc1=1.8V to 3.6V) 1.3 Input pin pull up, pull down resistance The design method of pull up/pull down resistance for input and output are as follows. 1.3.1 Pull up resistance Rpu of input terminals V -V Rpu ≧ CC OLM …① I OLM Microcontroller EEPROM Rpu VOLM ≦ V ILE …② VOLM IOLM VILE Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA, “L” output “L” input from the equation①, Rpu ≧ 5-0.4 Figure 48. Input terminal pull up resistance 2×10-3 ∴Rpu ≧ 2.3[kΩ] ・VILE : EEPROM VIL specifications With the value of Rpu to satisfy the above equation, VOLM ・VOLM : Microcontroller VOL specifications becomes 0.4V or below, and with VILE(=1.5V), the equation ・IOLM : Microcontroller IOL specifications ② is also satisfied. www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 17/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) 1.3.2 Pull down resistance Rpd of input terminals V Rpd ≧ OHM …① I Microcontroller EEPROM OHM VOHM VIHE VOHM ≦ VIHE …② I OHM “H” output Rpd “H” input Example) When Vcc=5V, VIHE=3.5V, VOHM=2.4V, IOHM=2mA, from the equation①, Rpd ≧ 2.4 Figure 49. Input terminals Pull down resistance 2×10-3 ∴Rpd ≧ 1.2 [kΩ] ・VIHE : EEPROM VIH specifications ・VOHM : Microcontroller VOH specifications With the value of Rpd to satisfy the above equation, VOHM becomes 2.4V or higher, and with VIHE(=3.5V), the equation②is ・IOHM : Microcontroller IOH specifications also satisfied. 1.3.3 Pull up resistance Rpu of SO pin V -V Rpu ≧ CC OLE …① I OLE Microcontroller EEPROM VILM Rpu IOLE VOLE VOLE ≦ VILM … ② Example) When Vcc=5V, VOLE=0.4V, VILM=1.5V, IOLE=2.1mA, “L” input from the equation①, “L” output Rpu ≧ 5-0.4 Figure 50. SO Pull up resistance 2.1×10-3 ∴Rpu ≧ 2.2 [kΩ] ・VOLE : EEPROM VOL specifications With the value of Rpd to satisfy the above equation, VOLE ・IOLE : Microcontroller IOL specifications becomes 0.4V or higher, and with VILM(=1.5V), the equation②is ・VILM : Microcontroller VIL specifications also satisfied. 1.3.4 Pull up resistance Rpu of SO pin EEPROM Rpd ≧ VOHE …① I OHE Microcontroller VOHE VOHE ≧ VIHM …② V IHM Example) When Vcc=5V, VOHE=Vcc-0.5V, VIHM=Vccx0.7V, IOHE=0.4mA, “H” input Rpd I from the equation①, OHE “H” output Rpd ≧ 5-0.5 0.4×10-3 Figure 51. SO Pull down resistance ∴Rpd ≧ 11.3 [kΩ] ・VOHE : EEPROM VOH specifications With the value of Rpu to satisfy the above equation, VOHE ・IOHE : EEPROM IOH specifications becomes 4.5V or higher, and with VIHM(=3.5V), the equation ② is ・VIHM : Microcontroller VIH specifications also satisfied. www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 18/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●LDO regulator part LDO regulator part of BU9829GUL-W is CMOSLDO of low power consumption. The data are stored into EEPROM and output voltage change among 2.7 to 3.0V. 1step is 0.1V. LDO regulator part had LDOEN pin and VOUT pin. To make this LDOEN pin LOW is standby mode of low power consumption. ○LDOEN Input Terminals Input equivalent circuit of LDOEN is showed Figure 52. Input terminal is connected between input circuits made from NMOS and pull up and input protection circuit. This pin is not pull up or pull down, therefore please don’t input Hi-z. If LDOEN is LOW, all circuit don’t move and LDO part is standby mode of low power consumption. LDOEN VREF - + VOUT Figure 52. LDOEN output terminals Figure 53. VOUT output terminals ○VOUT Output Terminals Output equivalent circuit of VOUT is showed Figure 53. If LDOEN is HIGH, LDO regulator output regulate voltage from VOUT pin. If LDOEN is LOW, VOUT pin is GND by VOUT-GND resistance. Output overshoots change by output capacity, in actual use, please evaluate and decide output capacity. VOUT VOUT 172mV 88mV 13.6us VCC=3.0V 20us VCC=3.0V OPoswciellor sscoouprcee STeHkOtrWonAix 3 T1D7BS 3034B VLCDCO_ENVOUT 0.1uF cpurorrbeent OPoswciellor sscoouprcee STeHkOtrWonAix 3 T1D7BS 3034B VLCDCO_ENVOUT 0.1uF cpurorrbeent 700Ω 700Ω Input pulse RKo2h09m5N Input pulse RKo2h09m5N rising 1us measurement circuit rising 1us measurement circuit IOUT=0→4mA IOUT=0→4mA BU9829GUL-W Evaluation result BU9829GUL-W Evaluation result (IOUT=0mA→4mA,COUT=1.0uF) (IOUT=0mA→4mA,COUT=0.1uF) Figure 54. CL=0µF Transitional response Figure 55. CL=0.1µF Transitional response VOUT VOUT 40mV 40mV 12us VCC=3.0V 120us VCC=3.0V OPoswciellor sscoouprcee STeHkOtrWonAix 3 T1D7BS 3034B VLCDCO_ENVOUT 0.1uF cpurorrbeent OPoswciellor sscoouprcee STeHkOtrWonAix 3 T1D7BS 3034B VLCDCO_ENVOUT 0.1uF cpurorrbeent 700Ω 700Ω Input pulse RKo2h09m5N Input pulse RKo2h09m5N rising1us measurement circuit rising 1us measurement circuit IOUT=0→4mA IOUT=0→4mA BU9829GUL-W Evaluation result BU9829GUL-W Evaluation result (I =0mA→4mA,C =1.0uF) (I =0mA→4mA,C =1.0uF) OUT OUT OUT OUT Figure 56. CL=1.0µF Transitional response Figure 57. CL=10µF Transitional response www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 19/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ○Package power dissipation Package power dissipation of BU9829GUL-W is 220mW. It is the value at environmental temperature is 25℃. In the case of use at 25℃ or higher, degradation is done at 2.2W/℃. If output current is very large, please take care of package power dissipation. 300 mW] 200 W] Pd) [ m失( Pd [容損 100 許 0 -50 -25 0 25 50 75 100 125 150 周T囲a 温[度℃(]T a ) [℃] Figure 58. Package power dissipation ○Large Current Protection Circuit VOUT terminal has large current protection circuit. This circuit protects IC from large current. However, this protection circuit effective unexpected accident. Please avoid continual use of protection circuit. 3 2.5 V] 2 ge[ a olt 1.5 ut v utp 1 T o U O 0.5 V 0 0 5 10 15 20 VOUT load current [mA] Figure 59. Large Current Protection Circuit ●POR circuit This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noise the likes. Recommended conditions of tR, tOFF, Vbot tR Vcc1 tR tOFF Vbot 10ms or below 10ms or higher 0.3V or below 100ms or below 10ms or higher 0.2V or below tOFF Vbot 0 Figure 60. Rise waveform www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 20/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●LVCC circuit LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite. ●Noise countermeasures ○Vcc noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1µF) between IC Vcc and GND. At that moment, attach it as close to IC as possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND. IC Capacitor 0.01 to 0.1µF PRINT BASE GND Vcc Capacitor 10 to 100µF Figure 61. Vcc noise countermeasures example ●Recommendable application circuit Vcc2(3.3V) 1. It is recommended to attach bypass condensers on Vcc1(1.8V) power line. 2. Be sure to make CSB pull up. At power on, mat cause the abnormal function. RPU BU9829GUL-W RPU 3. Please make LDOEN pull down. Vcc1 4. If EEPROM malfunction occur by Hi-Z input of the CSB microcontroller part connected with SO, please make SCK SO SO pull up or pull down. 5. Please attach capacity at VOUT terminal. Outputs SI Vcc2 overshoot change by output capacity. In actual use, please evaluate and decide output capacity. LDOEN VGONUDT CL (0.1Cµ F) (0.1Cµ F) RPD RPD Figure 62. Recommendable Application circuit ●Notes for use ・Absolute maximum ratings We pay attention to quality control of this IC, but if there is special mode exceeded absolute maximum rating, please take a physical safety measures. Because we can’t specify short mode and open made, etc. ・Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. ・Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. ・Common impedance Please pay attention to VCC and GND wiring. For example, lower common impedance and to make wiring think, etc. ・GND electric potential Set the voltage of GND terminal lowest at any action condition. And, please make pin except GND voltage of GND or over. ・Test of set base If low impedance pin connect with capacity at test of set base, please discharge each test progress to stress IC. Please embroider earth for static electricity measures at structure progress, pay attention to carry and conservation. When set base connect with test base at test progress, please connect and remove from power OFF. Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority. www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 21/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Ordering Information B U 9 8 2 9 G U L - W E 2 Part Number Package Packaging and forming specification GUL: VCSP50L1(BU9829GUL-W) E2: Embossed tape and reel ●Physical Dimension Tape and Reel Information VVCCSSPP505L10 (LB1U(9B82U99G8U2L9-WG)U L-W) 1PIN MARK 5 0.0 ± 5 6 1. 5 X 0 A 1.74±0.05 0. M ± 5 1 5 0. 0. S 0.08 S 5 0 0. 9-φ0.25±0.05 5± 2 0.05 A B A 0.3 (φ0.15)INDEX POST C B ×2 B 0.5 = A P 1 2 3 0.37±0.05 P=0.5×2 (Unit : mm) <Tape and Reel information> Tape Embossed carrier tape Quantity 3000pcs E2 Direction of feed ( The direction is the 1pin of product is at the upper left when you hold ) reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel ∗ Order quantity needs to be multiple of the minimum quantity. ●Marking Diagram VCSP50L1(BU9829GUL-W) (TOP VIEW) 1PIN MARK Part Number Marking 9829 LOT Number www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 22/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett BU9829GUL-W (16Kbit) ●Revision History Date Revision Changes 28.Aug.2012 001 New Release www.rohm.com TSZ02201-0R2R0G100400-1-2 © 2012 ROHM Co., Ltd. All rights reserved. 23/23 TSZ22111・15・001 28.AUG.2012 Rev.001

DDaattaasshheeeett Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice - GE Rev.002 © 2014 ROHM Co., Ltd. All rights reserved.

DDaattaasshheeeett Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label QR code printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with ROHM representative in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.: 2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice - GE Rev.002 © 2014 ROHM Co., Ltd. All rights reserved.

DDaattaasshheeeett General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sale s representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE Rev.001 © 2014 ROHM Co., Ltd. All rights reserved.

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