Smart Low Side Power Switch HITFET BTS 3134N Product Summary Features (cid:1) Logic Level Input Drain source voltage VDS 42 V (cid:0) (cid:1) Input Protection (ESD) On-state resistance RDS(on) 50 m (cid:1) Thermal shutdown Nominal load current ID(Nom) 3 A • Green product (RoHS compliant) Clamping energy E 500 mJ AS (cid:1) Overload protection (cid:1) Short circuit protection 4 (cid:1) Overvoltage protection (cid:1) Current limitation 3 (cid:1) Analog driving possible 2 1 VPS05163 Application (cid:1) All kinds of resistive, inductive and capacitive loads in switching or linear applications (cid:1) µC compatible power switch for 12 V DC applications (cid:1) Replaces electromechanical relays and discrete circuits General Description (cid:2) N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Datasheet 1 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Maximum Ratings at T = 25°C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS Drain source voltage for short circuit protection V 30 DS(SC) T = -40...150°C j Continuous input current I mA IN (cid:0) (cid:0) -0.2V V 10V no limit IN (cid:0) V < -0.2V or V > 10V | I | 2 IN IN IN Operating temperature T -40 ...+150 °C j Storage temperature T -55 ... +150 stg Power dissipation P 3.8 W tot T = 85 °C C Unclamped single pulse inductive energy 1) E 500 mJ AS Load dump protection V 2) = V + V V 53.5 V LoadDump A S LD (cid:1) V = 0 and 10 V, t = 400 ms, R = 2 , IN (cid:1) d I R = 4.5 , V = 13.5 V L A Electrostatic discharge voltage (Human Body Model) VESD 2 kV according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Thermal resistance junction - ambient: R K/W thJA @ min. footprint 125 @ 6 cm2 cooling area 3) 72 junction-soldering point: R 17 K/W thJS 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Characteristics Drain source clamp voltage V 42 - 55 V DS(AZ) T = - 40 ...+ 150, I = 10 mA j D Off-state drain current Tj = -40 ... +150°C IDSS - 1.5 10 µA V = 32 V, V = 0 V DS IN Input threshold voltage V V IN(th) I = 1.4 mA, T = 25 °C 1.3 1.7 2.2 D j I = 1.4 mA, T = 150 °C 0.8 - - D j On state input current I - 10 30 µA IN(on) (cid:0) On-state resistance R m DS(on) V = 5 V, I = 3 A, T = 25 °C - 45 60 IN D j V = 5 V, I = 3 A, T = 150 °C - 75 100 IN D j On-state resistance R DS(on) V = 10 V, I = 3 A, T = 25 °C - 35 50 IN D j V = 10 V, I = 3 A, T = 150 °C - 65 90 IN D j Nominal load current I A D(Nom) V = 0.5 V, T < 150°C, V = 10 V, T = 85 °C 3 - - DS j IN A Current limit (active if V >2.5 V)1) I 18 24 30 DS D(lim) V = 10 V, V = 12 V, t = 200 µs IN DS m 1Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. Datasheet 3 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Dynamic Characteristics Turn-on time V to 90% I : t - 60 100 µs IN D on (cid:0) R = 4.7 , V = 0 to 10 V, V = 12 V L IN bb Turn-off time V to 10% I : t - 60 100 IN D off (cid:0) R = 4.7 , V = 10 to 0 V, V = 12 V L IN bb Slew rate on 70 to 50% Vbb: -dVDS/dton - 0.3 1.5 V/µs (cid:0) R = 4.7 , V = 0 to 10 V, V = 12 V L IN bb Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.7 1.5 (cid:0) R = 4.7 , V = 10 to 0 V, V = 12 V L IN bb Protection Functions1) Thermal overload trip temperature T 150 175 - °C jt Input current protection mode IIN(Prot) 80 160 300 µA Input current protection mode I - 130 300 IN(Prot) T = 150 °C j Unclamped single pulse inductive energy 2) E 500 - - mJ AS I = 3 A, T = 25 °C, V = 12 V D j bb Inverse Diode Inverse diode forward voltage V - 1 - V SD I = 15 A, t = 250 µs, V = 0 V, F m IN t = 300 µs P 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet 4 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Block diagram Terms Inductive and overvoltage output clamp RL D V Z IIN 2 D IN 1 ID VDS Vbb HITFET 3 S S VIN HITFET Input circuit (ESD protection) Short circuit behaviour V IN Gate Drive Input IIN t Source/ Ground ID t t T j t Datasheet 5 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. RON = f(Tj); ID=3A; VIN=10V P = f(T ) @ R =72 K/W tot A thJA 10 100 (cid:0) W m max. 8 80 max. n) 7 o 70 Ptot 6 RDS( 60 typ. 5 50 4 40 3 30 26cm2 20 1 10 0 0 -75 -50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 125 °C 175 T ;T T S A j 3 On-state resistance 4 Typ. input threshold voltage RON = f(Tj); ID= 3A; VIN=5V VIN(th) = f(Tj); ID = 0.7 mA; VDS= 12V (cid:0)110 2 m max. V 90 1.6 S(on) 80 typ. S(th) 1.4 D 70 G R V 1.2 60 1 50 0.8 40 0.6 30 20 0.4 10 0.2 0 0 -50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 °C 150 T T j j Datasheet 6 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN); VDS=12V; TJstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 30 30 A A 20 20 D D I I Vin=10V 15 15 5V 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 V 10 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(VDS); TJstart=25°C IDSS = f(Tj) Parameter: V IN 35 11 µA max. A 10V 9 7V 25 8 6V S S D D 7 I 20 5V I 6 4V 15 5 4 10 Vin=3V 3 2 typ. 5 1 00 1 2 3 4 V 6 0-50 -25 0 25 50 75 100 125 °C 175 V T DS j Datasheet 7 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 40 102 K/W A D=0.5 101 0.2 30 -40°C 0.1 m) A 0.05 ID(li 25 ZthJ 100 0.02 0.01 20 10-1 15 10 150°C 85°C 25°C 10-2 5 Single pulse 0 10-3 0 0.5 1 1.5 2 2.5 3 ms 4 10-710-610-510-410-310-210-1100 101 s 103 t t p 11 Determination of I D(lim) I = f(t); t = 200µs D(lim) m Parameter: T Jstart 40 A 30 -40°C m) D(li 25 I 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Package Outlines 1 Package Outlines 6.5±0.2 1.6±0.1 A 3±0.1 0.1 MAX. B 4 . X A M ˚ 5 2 3 1 0. 0. ± ± 5 7 . 3 1 2 3 0.7±0.1 2.3 N. 0.28 MI ±0.04 4.6 .5 0...10˚ 0 0.25 M A 0.25 M B GPS05560 Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm Datasheet 9 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch HITFET BTS 3134N Revision History 2 Revision History Version Date Changes Rev. 1.3 2008-04-14 Package information updated to SOT223-4 Rev. 1.2 2007-03-28 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2004-02-02 released production version Datasheet 10 Rev. 1.3, 2008-04-14

Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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