Thyristors Surface Mount – 600V > BTB12-600TW3G BTB12-600TW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 600 V • Minimizes Snubber • On-State Current Rating Networks for Protection of 12 Amperes RMS at • Industry Standard TO- 80°C 220AB Package • Uniform Gate Trigger • High Commutating dI/dt Currents in Three − 1.75. A/ms minimum at Quadrants 110°C • High Immunity to dV/dt − • These are Pb−Free 10 V/µs minimum at 125°C Devices Pin Out Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19

Thyristors Surface Mount – 600V > BTB12-600TW3G Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , BTB12−600BW3G DRM 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = -40° to 150°C) V J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80°C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current I 126 A (One Full Cycle Sine Wave, 60 Hz, T= 25°C) TSM C Circuit Fusing Consideration (t = 8.3 ms) I2t 66 A²sec Non−Repetitive Surge Peak Off−State Voltage V / V V / V DSM RSM V (T = 25°C, t = 10 ms) DSM RSM +100 J Peak Gate Current (T = 125°C, t = 20ms) I 4.0 W J GM Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C) P 20 W C GM Average Gate Power (T = 125°C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +125 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Junction−to−Case (AC) R 1.8 Thermal Resistance, ƟJC °C/W Junction−to−Ambient R 60 ƟJA Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds L Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current T = 25°C I , - - 0.005 J DRM mA (VD = VDRM = VRRM; Gate Open) TJ = 125°C IRRM - - 1.0 Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = ±17 A Peak) V − − 1.55 V TM TM MT2(+), G(+) 2.5 − 5.0 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 Ω) MT2(+), G(−) I 2.5 − 5.0 mA D L GT MT2(−), G(−) 2.5 − 5.0 Holding Current I − − 10 mA (V = 12 V, Gate Open, Initiating Current = ±100 mA) H D MT2(+), G(+) − − 15 Latching Current (V = 24 V, I = 60 mA) MT2(+), G(−) I − − 15 mA D G L MT2(−), G(−) − − 15 MT2(+), G(+) 0.5 − 1.3 Gate Trigger Voltage (V = 12 V, R = 30 Ω) MT2(+), G(−) V 0.5 − 1.3 V D L GT MT2(−), G(−) 0.5 − 1.3 MT2(+), G(+) 0.2 − − Gate Non−Trigger Voltage (T = 125°C) MT2(+), G(−) V 0.2 − − V J GD MT2(−), G(−) 0.2 − − 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19

Thyristors Surface Mount – 600V > BTB12-600TW3G Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current, See Figure 10. (dI/dt)c 1.75 − − A/ms (Gate Open, T = 125°C, No Snubber) J Critical Rate of Rise of On−State Current dI/dt − − 45 A/µs (T = 125°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 10 − − V/µs (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125°C) D DRM J Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Forward Off State Voltage +Current DRM I Peak Forward Blocking Current DRM Quadrant 1 V Peak Repetitive Reverse Off State Voltage MainTerminal 2 + RRM VTM I Peak Reverse Blocking Current RRM on state VTM Maximum On State Voltage IH I Holding Current IRRM at VRRM H off state +Voltage Quadrant Definitions for a Triac IH IDRM at VDRM Quadrant 3 MT2 POSITIVE MainTerminal 2 VTM (Positive Half Cycle) + (+) MT2 (+) MT2 QuadrantII ( ) IGT (+) IGT QuadrantI GATE GATE MT1 MT1 REF REF IGT +IGT ( ) MT2 ( ) MT2 QuadrantIII ( ) IGT (+) IGT QuadrantIV GATE GATE MT1 MT1 REF REF MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19

Thyristors Surface Mount – 600V > BTB12-600TW3G Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. On−State Characteristics Figure 4. Thermal Response 100 E 1 C N A T S SI E R L D) AE MZ TTYJ P=IC 2A5L° CAT HERMALI0.1 TR T O NN CURRENT (A)10 r(t), TRANSIE (0.010.1 1 10 100 1000 4 E t, TIME (ms) T A T S N S O Figure 5. Typical Hold Current Variation U O E N A T N A T S 1 N I, IT 0.1 00 .5 1.0 1.5 2.0 2.5 3.0 VT, INST ANTANEOUS ON-ST ATE VO LTAGE (V ) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19

Thyristors Surface Mount – 600V > BTB12-600TW3G Figure 6. Typical Gate Trigger Current Variation Figure 7. Typical Gate Trigger Voltage Variation Figure 9. Critical Rate of Rise of Off-State Voltage Figure 8. Typical Latching Current Variation (Exponential Waveform) 5000 VD = 600 Vpk 4K TJ = 110°C µ 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I CHARGE TRIGGER CCOHNATRRGOEL NTROL - 200 V O + C R MT2 E GG 1N91451 RI MT1 T G CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19

Thyristors Surface Mount – 600V > BTB12-600TW3G Dimensions Part Marking System 4 SEATING PLANE B F C T S 4 BTB12-6TWG Q A YMAXX TO 220AB 12 3 U 1 CASE 221A 2 H 3 STYLE 12 K Z x =6 or 8 Y =Year L R M =Month A =Assembly Site V J XX=Lot Serial Code G =Pb-Free Package G D N Inches Millimeters Pin Assignment Dim Min Max Min Max 1 Main Terminal 1 A 0.590 0.620 14.99 15.75 2 Main Terminal 2 B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 No Connection D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 Ordering Information G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 Device Package Shipping J 0.018 0.024 0.46 0.61 TO−220AB BTB12−600TW3G 500 Units / Rail K 0.540 0.575 13.72 14.61 (Pb−Free) L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/11/19