BTA04 T/D/S/A BTB04 T/D/S/A ® SENSITIVE GATE TRIACS A2 FEATURES VerylowI =10mAmax n GT LowI =15mAmax n H G BTAFamily: n Insulatingvoltage=2500V A1 (RMS) (ULrecognized:E81734) ) s ( t DESCRIPTION c u TheBTA/BTB04T/D/S/Atriacfamilyarehighper- d formanceglasspassivatedPNPNdevices. o Thesepartsaresuitablesforgeneralpurposeap- A1 r plications where gate high sensitivity is required. A2G P Applicationon4Qsuchasphasecontrolandstatic e switching. e t TO-220AB l o s b O ABSOLUTERATINGS(limitingvalues) - Symbol Pa)rameter Value Unit s IT(RMS) RMSon-statecurrent (360°tc(onductionangle) BTA Tc= 90°C 4 A c BTB Tc= 95°C u ITSM Nonrepetitivesurgedpeakon-statecurrent tp=8.3ms 42 A (Tj initial=25°Co) tp=10ms 40 r I2t I2tvalue P tp=10ms 8 A2s dI/dt Critieca lrateofriseofon-statecurrent Repetitive 10 A/µs Gtatesupply:IG=50mA dIG/dt=0.1A/µs F=50Hz e Nonrepetitive 50 l o Tstg Storageandoperatingjunctiontemperaturerange -40to+150 °C s b Tj -40to+110 O Tl Maximumleadsolderingtemperatureduring10sat4.5mmfromcase 260 °C BTA/BTB04- Symbol Parameter Unit 400T/D/S/A 600T/D/S/A 700T/D/S/A VDRM Repetitivepeakoff-statevoltageTj=110°C 400 600 700 V VRRM September2001-Ed:1A 1/6

BTA04 T/D/S/A BTB04 T/D/S/A THERMALRESISTANCE Symbol Parameter Value Unit Rth(j-a) Junction toambient 60 (cid:176) C/W Rth(j-c) DC JunctiontocaseforDC BTA 4.4 °C/W BTB 3.2 Rth(j-c) AC Junctiontocasefor360°conductionangle(F=50Hz) BTA 3.3 °C/W BTB 2.4 GATECHARACTERISTICS(maximumvalues) P =1W P =40W(tp=20µs) I =4A(tp=20µs) V =16V(tp=20µs) G(AV) GM GM GM ELECTRICAL CHARACTERISTICS BTA/BTB04 Symbol Testconditions Quadrant )Unit s T D S A ( t IGT VD=12V(DC) RL=33W Tj=25°C I-II-III MAX. 5 5 10u c 10 mA d IV MAX. 5 10 10 25 o VGT VD=12V(DC) RL=33W Tj=25°C I-II-III-IV MAX. P r 1.5 V VGD VD=VDRM RL=3.3kW Tj=110°C I-II-III-IV MIN. e 0.2 V t e tgt VD=VDRM IG=40mA Tj=25°C I-II-III-IV lTYP. 2 µs dIG/dt=0.5A/µs o s IL IG=1.2IGT Tj=25°C I-IIIb-IV TYP. 10 10 20 20 mA O II 20 20 40 40 - IH* IT=100mA Gateopen Tj=s2)5°C MAX. 15 15 25 25 mA ( VTM* ITM= 5.5A tp=380µs ctTj=25°C MAX. 1.65 V u IDRM VDRMrated d Tj=25°C MAX. 0.01 mA IRRM VRRMrated o Tj=110°C MAX. 0.75 r P dV/dt* Linearslopeupto Tj=110°C TYP. 10 10 - - V/m s VD=6e7%VDRMgateopen t MIN. - - 10 10 e l (dI/dt)c*o (dI/dt)c=1.8A/ms Tj=110°C TYP. 1 1 5 5 V/µs s *FboreitherpolarityofelectrodeA voltagewithreferencetoelectrodeA 2 1 O 2/6

BTA04 T/D/S/A BTB04 T/D/S/A PRODUCT INFORMATION IT(RMS) VDRM/VRRM SensitivitySpecification Package A V T D S A BTA 4 400 X X (Insulated) 600 X X 700 X X BTB 400 X X (Uninsulated) 600 X X ORDERINGINFORMATION ) BT A 04 - 400 T s ( t c u Triac d Series So ensitivity r Insulation: P A:insulated e Voltage: t B:non insulated e 400:400V l o 600:600V s Current:04A 700:700V b O - ) s ( t c u d o r P e t e l o s b O 3/6

BTA04 T/D/S/A BTB04 T/D/S/A Fig. 1: Maximum RMS power dissipation versus Fig.2:CorrelationbetweenmaximumRMSpower RMS on-state current (F = 50Hz).(Curves are cut dissipation and maximum allowable temperature offby(dI/dt)climitation) (TambandTcase)fordifferentthermalresistances heatsink+contact(BTA). ) s ( t Fig.3:CorrelationbetweenmaximumRMSpower Fig.4:RMSon-statecurrentversusccasetemper- u dissipation and maximum allowable temperature ature. d (TambandTcase)fordifferentthermalresistances o heatsink+contact(BTB). r P e t e l o s b O - ) s ( t c u d o r P Fig. 5: Relative v ariation of thermal impedance Fig. 6: Relative variation of gate trigger current versuspulseduraetion. andholdingcurrentversusjunctiontemperature. t e Zth/Rthl o 1 s b O Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 4/6

BTA04 T/D/S/A BTB04 T/D/S/A Fig.7:Nonrepetitivesurgepeakon-statecurrent Fig.8:Nonrepetitivesurgepeakon-statecurrent versusnumberofcycles. forasinusoidalpulsewithwidth:t£ 10ms,andcor- respondingvalueofI2t. ) s ( t c u d Fig.9:On-statecharacteristics(maximumvalues). o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 5/6

BTA04 T/D/S/A BTB04 T/D/S/A PACKAGEMECHANICALDATA TO-220AB(Plastic) DIMENSIONS REF. Millimeters Inches B C Min. Typ. Max. Min. Typ. Max. b2 A 15.20 15.90 0.598 0.625 a1 3.75 0.147 L a2 13.00 14.00 0.511 0.551 F I B 10.00 10.40 0.393 0.409 A b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 l4 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.0)27 s a1 c2 c2 2.40 2.72 0.094 t(0.107 c l3 e 2.40 2.70 0.094u 0.106 l2 a2 F 6.20 6.60o 0.d244 0.259 I 3.75 3.r85 0.147 0.151 P I4 15.80 16.4 0 16.80 0.622 0.646 0.661 e L 2.65t 2.95 0.104 0.116 b1 M e c1 l2 o1l.14 1.70 0.044 0.066 e l3s 1.14 1.70 0.044 0.066 b O M 2.60 0.102 - ) s ( t OTHER INFORMATION c u Orderingtype Markingd Package Weight Baseqty Deliverymode o BTA/BTB04-xxxy BTA/BTB04-xxxy TO-220AB 2.3g 250 Bulk r EpoxymeetsUL94,VP 0 n n Coolingmethode:C Recommentdedtorquevalue:0.8m.N. n e Maximulmtorquevalue:1m.N. n o s b O Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap- provalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2001STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia Malta-Morocco-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-U.S.A. http://www.st.com 6/6