BTB04-600SL ® STANDARD 4A TRIAC MAIN FEATURES A2 Symbol Value Unit IT(RMS) 4 A G VDRM/VRRM 600 V A1 A2 IGT(Q1) 10 mA DESCRIPTION TheBTB04-600SL4quadrantsTRIACisintended A1 forgeneralpurposeapplicationswherehighsurge A2 G current capability is required, such as lighting, cordedpowertools,industrial. This TRIAC features a gate current capability TO-220AB sensitivityof10mA. ABSOLUTEMAXIMUMRATINGS Symbol Parameter Value Unit IT(RMS) RMSon-statecurrent (fullsinewave) TO-220AB Tc= 105°C 4 A ITSM Nonrepetitivesurgepeakon-statecurrent F=50Hz t=20ms 35 A (fullcycle,Tj initial=25°C) F=60Hz t=16.7ms 38 I2t I2tvalueforfusing tp=10ms 6 A2s dI/dt Criticalrateofriseofon-statecurrent Repetitive F=100Hz 50 A/µs IG=2xIGT,tr£ 100ns IGM Peakgate tp=20µs Tj=125°C 4 A PG(AV) Averagegatepowerdissipation Tj=125°C 0.5 W Tstg Storagejunctiontemperaturerange -40to+150 °C Tj Operatingjunctiontemperaturerange -40to+125 March2002-Ed:1A 1/5

BTB04-600SL ELECTRICAL CHARACTERISTICS(Tj=25°C,unlessotherwisespecified) Symbol Testconditions Quadrant Value Unit IGT(1) VD=12V RL=30W I-II-III MAX. 10 mA IV MAX. 25 VGT VD=12V RL=30W ALL MAX. 1.3 V VGD VD=VDRM RL=3.3kW Tj=125°C ALL MIN. 0.2 V IH(2) IT=100mA MAX. 15 mA IL IG=1.2IGT I-III-IV MAX. 15 mA II 25 dV/dt(2) VD=67%VDRMgateopen Tj=125°C MIN. 75 V/m s (dV/dt)c(2) (dI/dt)c=1.8A/ms Tj=125°C MIN. 10 V/µs STATIC CHARACTERISTICS Symbol TestConditions Value Unit VTM(2) ITM=5A tp=380µs Tj=25°C MAX. 1.5 V VTO(2) Thresholdvoltage Tj=125°C MAX. 0.85 V Rd(2) Dynamicresistance Tj=125°C MAX. 100 mW IDRM VDRM=VRRM Tj=25°C MAX. 5 µA IRRM Tj=125°C 1 mA Note1:minimumIGTisguarantedat5%ofIGTmax. Note2:forbothpolaritiesofA2referencedtoA1. THERMALRESISTANCE Symbol Parameter Value Unit Rth(j-c) Junctiontocase(AC) 3 °C/W Rth(j-a) Junctiontoambient 60 °C/W 2/5

BTB04-600SL PRODUCT SELECTOR PartNumber Voltage Sensitivity Type Package BTB04-600SL 600V 10mA Standard TO-220AB ORDERINGINFORMATION BT B 04 - 600 SL S:SENSITIVITY = 10mA L:LIGHTING APPLICATION TRIAC SERIES INSULATION VOLTAGE:600V B:non insulated CURRENT:4A Fig. 1: Maximum power dissipation versus RMS Fig. 2: RMS on-state current versus case on-statecurrent temperature. P(W) IT(RMS)(A) 5 5.0 a=180° a=180° 4.5 4 4.0 3.5 3 3.0 2.5 2 2.0 1.5 1 18a0° 1.0 a 0.5 Tc(°C) IT(RMS)(A) 0.0 0 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal impedance Fig.4:On-statecharacteristics(maximumvalues) versuspulseduration. ITM(A) K = [Zth/Rth] 100 1.E+00 Tj=25°C Zth(j-c) Tj=125°C 1.E-01 Zth(j-a) 10 1.E-02 Tjmax.: Vto= 0.85V tp(s) VTM(V) Rd= 100 mW 1.E-03 1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1 2 3 4 5 6 7 8 9 10 3/5

BTB04-600SL Fig.5:Surgepeakon-statecurrentversusnumber Fig.6:Nonrepetitivesurgepeakon-statecurrent ofcycles. for a sinusoidal pulse with width tp < 10ms, and correspondingvalueofI2t. ITSM(A) ITSM(A),I2 t (A2 s) 40 1000 Tjinitial=25°C 35 30 TNjoinnitrieapl=e2ti5ti°vCe t=20ms dI/dtlimitation: 100 50A/µs ITSM 25 20 Repetitive 15 Tc=110°C 10 I²t 10 5 Number of cycles tp(ms) 0 1 1 10 100 1000 0.01 0.10 1.00 10.00 Fig. 7: Relative variation of gate trigger current, Fig.8:Relativevariationofcriticalrateofdecrease holding current and latching current versus junc- ofmaincurrentversusreapplieddV/dt(typicalval- tiontemperature(typicalvalues). ues). IGT,IH,IL[Tj] / IGT,IH,IL [Tj = 25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 3.0 2.0 1.8 2.5 1.6 1.4 2.0 IGT 1.2 1.5 1.0 0.8 1.0 IH & IL 0.6 0.4 0.5 Tj(°C) 0.2 dV/dt (V/µs) 0.0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100110120130 0.1 1.0 10.0 100.0 Fig.9:Relativevariationofcriticalrateofdecrease Fig. 10: Relative variation of static dV/dt immunity ofmaincurrentversusjunctiontemperature. versusjunctiontemperature. (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] dV/dt [Tj] / dV/dt [Tj = 125°C] 8 8 VD=VR=400V 7 7 6 6 5 5 4 4 3 3 2 2 1 1 Tj(°C) Tj(°C) 0 0 25 50 75 100 125 25 50 75 100 125 4/5

BTB04-600SL PACKAGEMECHANICALDATA TO-220AB(Plastic) DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 H2 A D 2.40 2.72 0.094 0.107 Dia C E 0.49 0.70 0.019 0.027 L5 L7 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 L6 F2 1.14 1.70 0.044 0.066 L2 F2 G 4.95 5.15 0.194 0.202 F1 L9 D G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L4 L2 16.4typ. 0.645typ. F M L4 13 14 0.511 0.551 G1 E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6typ. 0.102typ. Diam. 3.75 3.85 0.147 0.151 OTHER INFORMATION Orderingtype Marking Package Weight Baseqty Packingmode BTB04-600SL BTB04-600SL TO-220AB 2.3g 50 Tube Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap- provalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics ©2002STMicroelectronics-PrintedinItaly-Allrightsreserved. STMicroelectronicsGROUPOFCOMPANIES Australia-Brazil-Canada-China-Finland-France-Germany HongKong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco-Singapore Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates. http://www.st.com 5/5