BTA316-800B 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3. Applications • Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave; T ≤ 101 °C; Fig. 1; - - 16 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 140 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 150 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; 2 - 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; 2 - 50 mA D T T = 25 °C; Fig. 7 j

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; 2 - 50 mA D T T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A; T = 25 °C; Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V; T = 125 °C; (V = 67% 1000 - - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 16 A; 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/µs; (snubberless com condition); gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base; main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316-800B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 800 V DRM voltage I RMS on-state current full sine wave; T ≤ 101 °C; Fig. 1; - 16 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 140 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 150 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 98 A²s p dI /dt rate of rise of on-state I = 0.2 A - 100 A/µs T G current I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aab689 20 conduction form α=180° Ptot angle, factor (W) (degrees) a 120° 30 2.816 15 90° 60 1.976 α 90 1.570 60° 120 1.329 180 1.110 30° 10 5 0 0 2 4 6 8 10 12 14 16 IT(RMS) (A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 3 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 003aab684 003aab685 20 60 IT(RMS) IT(RMS) (A) (A) 50 16 40 12 30 8 20 4 10 0 0 -50 0 50 100 150 10-2 10-1 1 10 Tmb(°C) surgeduration(s) f = 50 Hz; T = 101 °C Fig. 2. RMS on-state current as a function of mounting mb base temperature; maximum values Fig. 3. RMS on-state current as a function of surge duration; maximum values 003aab668 160 ITSM (A) 120 80 IT ITSM 40 t 1/f Tj(init)=25°Cmax 0 1 10 102 103 numberofcycles(n) f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 4 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 103 003aab671 ITSM (A) (1) 102 IT ITSM t tp Tj(init)=25°Cmax 10 10-5 10-4 10-3 10-2 10-1 t (s) p t ≤ 20 ms p (1) dI /dt limit T Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 5 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 1.2 K/W th(j-mb) from junction to half cycle; Fig. 6 - - 1.7 K/W mounting base R thermal resistance in free air - 60 - K/W th(j-a) from junction to ambient free air 003aab776 10 Zth(j-mb) (K/W) (1) 1 (2) 10-1 P 10-2 tp t 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 6 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; 2 - 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; 2 - 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; 2 - 50 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - - 60 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - - 90 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - - 60 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A; T = 25 °C; Fig. 10 - 1.3 1.5 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.8 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T = 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 800 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V; T = 125 °C; (V = 67% 1000 - - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 16 A; 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/µs; (snubberless com condition); gate open circuit BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 7 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 001aac669 001aab100 3 3 (1) IGT IL IGT(25°C) IL(25°C) 2 2 (2) (3) 1 1 0 0 -50 0 50 100 150 -50 0 50 100 150 Tj(°C) Tj (°C) (1) T2- G- Fig. 8. Normalized latching current as a function of (2) T2+ G- junction temperature (3) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 001aab099 003aab666 3 50 IT IH (A) IH(25°C) 40 2 30 (1) (2) (3) 20 1 10 0 0 -50 0 50 100 150 0 0.5 1 1.5 2 Tj (°C) VT(V) V = 1.024 V; R = 0.021 Ω Fig. 9. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 8 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 001aab101 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 150 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 9 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 10. Package outline Plasticsingle-endedpackage;heatsinkmounted;1mountinghole; 3-leadTO-220AB SOT78 E A p A1 q mounting D1 base D L1(1) L2(1) Q b1(2) L (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10mm scale DIMENSIONS(mmaretheoriginaldimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) mL2a(1x). p q Q 4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6 mm 2.54 3.0 4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2 Notes 1.Leadshoulderdesignsmayvary. 2.Dimensionincludesexcessdambar. OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 08-04-23 SOT78 3-leadTO-220AB SC-46 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 10 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 11 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 12 / 13

WeEn Semiconductors BTA316-800B 3Q Hi-Com Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................7 10. Package outline........................................................10 11. Legal information.....................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 12 September 2018 BTA316-800B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 13 / 13

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