BTA208X-1000B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where very high blocking voltage, high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high voltage capability 3. Applications • Compressor starting controls • General purpose motor controls • Reversing induction motor controls e.g. vertical axis washing machines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1000 V DRM state voltage I RMS on-state current full sine wave; T ≤ 73 °C; Fig. 1; - - 8 A T(RMS) h Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 65 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 71 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; 2 18 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; 2 21 50 mA D T T = 25 °C; Fig. 7 j

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; 2 34 50 mA D T T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; Fig. 9 - 31 60 mA H D j V on-state voltage I = 10 A; T = 25 °C; Fig. 10 - 1.3 1.65 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 670 V; T = 125 °C; (V = 67% 1000 4000 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 8 A; 15 38 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/µs; (snubberless com condition); gate open circuit; Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb n.c. mounting base; isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208X-1000B TO-220F plastic single-ended package; isolated heatsink mounted; 1 SOT186A mounting hole; 3-lead TO-220 "full pack" BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 1000 V DRM voltage I RMS on-state current full sine wave; T ≤ 73 °C; Fig. 1; Fig. 2; - 8 A T(RMS) h Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 65 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 71 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 21 A²s p dI /dt rate of rise of on-state I = 0.2 A - 100 A/µs T G current I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aaa970 003aaa969 25 10 IT(RMS) IT(RMS) (A) (A) 73°C 20 8 15 6 10 4 5 2 0 0 10-2 10-1 1 10 -50 0 50 100 150 surgeduration(s) Th(°C) f = 50 Hz; T = 73 °C h Fig. 2. RMS on-state current as a function of heatsink Fig. 1. RMS on-state current as a function of surge temperature; maximum values duration; maximum values BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 3 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 003aaa967 12 71 Ptot conadnugcletion ffaocrtmor α=180° Th(max) (W) (degrees) a (°C) 10 120° 80 30 2.816 60 1.967 90° α 8 90 1.570 89 120 1.329 60° 180 1.110 6 30° 98 4 107 2 116 0 125 0 2 4 6 8 10 IT(RMS)(A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM (A) 60 40 IT ITSM 20 t 1/f Tj(init) = 25 °C max 0 1 10 102 103 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 4 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 103 003aab121 IT ITSM ITSM t (A) tp Tj(init)=25°Cmax (1) 102 10 10-2 10-1 1 10 102 tp(ms) t ≤ 20 ms p (1) dI /dt limit T Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 5 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle or half cycle; with heatsink - - 4.5 K/W th(j-h) from junction to compound; Fig. 6 heatsink full cycle or half cycle; without heatsink - - 6.5 K/W compound; Fig. 6 R thermal resistance in free air - 55 - K/W th(j-a) from junction to ambient free air 003aaf915 10 Zth(j-h) (1) (2) (K/W) 1 (3) (4) 10-1 P 10-2 tp t 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit V RMS isolation voltage from all terminals to external heatsink; - - 2500 V isol(RMS) sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; T = 25 °C h C isolation capacitance from main terminal 2 to external - 10 - pF isol heatsink; f = 1 MHz; T = 25 °C h BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 6 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; 2 18 50 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; 2 21 50 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; 2 34 50 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 31 60 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - 34 90 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - 30 60 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; Fig. 9 - 31 60 mA H D j V on-state voltage I = 10 A; T = 25 °C; Fig. 10 - 1.3 1.65 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.7 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T = 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 1000 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 670 V; T = 125 °C; (V = 67% 1000 4000 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 8 A; 15 38 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/µs; (snubberless com condition); gate open circuit; Fig. 12 BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 7 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 003aac888 001aab100 3 3 (1) IGT IL IGT(25°C) IL(25°C) 2 2 (2) (3) 1 1 0 0 -50 0 50 100 150 -50 0 50 100 150 Tj(°C) Tj (°C) (1) T2- G- Fig. 8. Normalized latching current as a function of (2) T2+ G- junction temperature (3) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 001aab099 003aaa971 3 25 IT IH (A) IH(25°C) 20 2 15 10 1 5 (1) (2) (3) 0 0 -50 0 50 100 150 0 1 2 3 Tj (°C) VT(V) V = 1.264 V; R = 0.0378 Ω Fig. 9. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 8 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 1.6 001aab101 103 003aaa973 VGT dIcom/dt VGT(25°C) (A/ms) 1.2 102 typ min 0.8 10 0.4 1 -50 0 50 100 150 20 60 100 140 Tj (°C) Tj(°C) Fig. 11. Normalized gate trigger voltage as a function of Fig. 12. Rate of change of commutating current as a junction temperature function of junction temperature; typical and minimum values BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 9 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 11. Package outline Fig. 13. Package outline TO-220F (SOT186A) BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 10 / 13

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BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 11 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 12 / 13

WeEn Semiconductors BTA208X-1000B 3Q Hi-Com Triac 13. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Isolation characteristics...............................................6 10. Characteristics............................................................7 11. Package outline........................................................10 12. Legal information.....................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 19 September 2018 BTA208X-1000B All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 13 / 13

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