BTA204S-600E 3Q Hi-Com Triac 14 August 2017 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits • 3Q technology for improved noise immunity • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • High commutation capability with sensitive gate • Planar passivated for voltage ruggedness and reliability • Sensitive gate for easy logic level triggering • Surface-mountable package • Triggering in three quadrants only 3. Applications • AC solenoids • General purpose motor control circuits • Home appliances 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - - 4 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 25 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 27 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - - 10 mA GT D T T = 25 °C; Fig. 7 j

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2+ G-; - - 10 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - - 10 mA D T T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; Fig. 9 - - 12 mA H D j V on-state voltage I = 5 A; T = 25 °C; Fig. 10 - 1.4 1.7 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% 30 - - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 4 A; 2.1 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/µs; gate open circuit com V = 400 V; T = 125 °C; I = 4 A; 8 - - A/ms D j T(RMS) dV /dt = 0.1 V/µs; gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base; main terminal 2 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA204S-600E DPAK plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 2 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - 4 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 25 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 27 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 3.1 A²s p dI /dt rate of rise of on-state I = 0.2 A - 100 A/µs T G current I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 12 003aag083 5 003aad615 IT(RMS) IT(RMS) (A) (A) 10 107 °C 4 8 3 6 2 4 1 2 0 0 10-2 10-1 1 10 -50 0 50 100 150 surgeduration(s) Tmb(°C) f = 50 Hz; T = 107 °C mb Fig. 2. RMS on-state current as a function of mounting Fig. 1. RMS on-state current as a function of surge base temperature; maximum values duration; maximum values BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 3 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 003aag081 8 101 conduction form Tmb(max) Ptot angle factor 104 (°C) (W) (degrees) α 30 4 α = 180° 6 107 60 2.8 90 2.2 α 120° 120 1.9 90° 110 180 1.57 60° 4 113 30° 116 2 119 122 0 125 0 1 2 3 4 5 IT(RMS) (A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 103 003aag085 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max (1) 102 10 10-5 10-4 10-3 10-2 10-1 tp(s) t ≤ 20 ms; (1) dI /dt limit p T Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 4 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 003aag086 30 ITSM (A) 20 10 IT ITSM t 1/f Tj(init) = 25 °C max 0 1 10 102 103 number of cycles f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 5 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 3 K/W th(j-mb) from junction to half cycle; Fig. 6 - - 3.7 K/W mounting base R thermal resistance printed circuit board (FR4) mounted - 75 - K/W th(j-a) from junction to ambient free air 003aag087 10 Zth(j-mb) (1) (K/W) (2) 1 10-1 P tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 6 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - - 10 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - - 10 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - - 10 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - - 12 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - - 18 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - - 12 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; Fig. 9 - - 12 mA H D j V on-state voltage I = 5 A; T = 25 °C; Fig. 10 - 1.4 1.7 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.7 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T = 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 600 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% 30 - - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dI /dt rate of change of V = 400 V; T = 125 °C; I = 4 A; 2.1 - - A/ms com D j T(RMS) commutating current dV /dt = 10 V/µs; gate open circuit com V = 400 V; T = 125 °C; I = 4 A; 8 - - A/ms D j T(RMS) dV /dt = 0.1 V/µs; gate open circuit com BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 7 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 003aad600 003aad604 3 3 IGT IL IGT(25°C) IL(25°C) (1) 2 2 (2) (3) 1 1 0 0 -50 0 50 100 150 -50 0 50 100 150 Tj (°C) Tj(°C) (1) T2- G- Fig. 8. Normalized latching current as a function of (2) T2+ G- junction temperature (3) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 003aad606 003aad611 3 12 IH IT (1) (2) (3) IH(25°C) (A) 2 8 1 4 0 0 -50 0 50 100 150 0 1 2 3 Tj (°C) VT (V) V = 1.27 V; R = 0.091 Ω Fig. 9. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 8 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 003aad596 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 150 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 9 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 10. Package outline Fig. 12. Package outline DPAK (SOT428) BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 10 / 13

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BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 11 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 12 / 13

WeEn Semiconductors BTA204S-600E 3Q Hi-Com Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................7 10. Package outline........................................................10 11. Legal information.....................................................11 © WeEn Semiconductors Co., Ltd. 2017. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 14 August 2017 BTA204S-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 14 August 2017 13 / 13