BT136S-600D 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate 3. Applications • General purpose motor controls • General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - - 4 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 25 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 27 A j(init) t = 16.7 ms; Fig. 4; Fig. 5 p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 2 5 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 2.5 5 mA D T T = 25 °C; Fig. 7 j

WeEn Semiconductors BT136S-600D 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; - 2.5 5 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 5 10 mA D T T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; Fig. 9 - 1.2 10 mA H D j V on-state voltage I = 5 A; T = 25 °C; Fig. 10 - 1.4 1.7 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% - 5 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2[1] G sym051 3 G gate mb T2 mounting base; connected to main terminal 2 DPAK (SOT428) [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT136S-600D DPAK plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 2 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - 4 A T(RMS) mb Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 25 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms; - 27 A j(init) p Fig. 4; Fig. 5 2 2 I t I t for fusing t = 10 ms; SIN - 3.1 A²s p dI /dt rate of rise of on-state I = 20 mA - 50 A/µs T G current I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aae828 003aae830 5 12 IT(RMS) IT(RMS) (A) (A) 10 4 8 3 6 2 4 1 2 0 0 -50 0 50 100 150 10-2 10-1 1 10 Tmb(°C) surge duration (s) f = 50 Hz Fig. 1. RMS on-state current as a function of mounting T ≤ 107 °C base temperature; maximum values mb Fig. 2. RMS on-state current as a function of surge duration; maximum values BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 3 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 003aae827 8 101 conduction form Ptot angle, α factor Tmb(max) (W) (degrees) a α (°C) 6 30 2.816 α=180° 107 60 1.967 90 1.570 120° α 120 1.329 90° 180 1.110 4 60° 113 30° 2 119 0 125 0 1 2 3 4 5 IT(RMS) (A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 103 003aae829 IT ITSM ITSM t (A) tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 10-1 tp (s) t ≤ 20 ms p (1) dI /dt limit T (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 4 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 003aae831 30 ITSM (A) 25 20 15 10 IT ITSM t 5 1/f Tj(init) = 25 °C max 0 1 10 102 103 104 number of cycles f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 5 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 3 K/W th(j-mb) from junction to half cycle; Fig. 6 - - 3.7 K/W mounting base R thermal resistance in free air [1] - 75 - K/W th(j-a) from junction to ambient free air [1] printed circuit board (FR4) mounted; standard footprint, single-sided copper, tin-plated 003aae836 10 Zth(j-mb) (K/W) unidirectional 1 bidirectional 10-1 P tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 6 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 2 5 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 2.5 5 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - 2.5 5 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 5 10 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 1.6 10 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - 4.5 15 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - 1.2 10 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G+; - 2.2 15 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; Fig. 9 - 1.2 10 mA H D j V on-state voltage I = 5 A; T = 25 °C; Fig. 10 - 1.4 1.7 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.7 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T = 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 600 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% - 5 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 7 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 003aaf448 003aae835 3 3 IGT IL IGT(25°C) IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 1 (4) 0 0 -60 -10 40 90 140 -60 -10 40 90 140 Tj(°C) Tj (°C) (1) T2- G+ Fig. 8. Normalized latching current as a function of (2) T2- G- junction temperature (3) T2+ G- (4) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature 003aae837 003aae834 2.0 12 IH IH(25°C) IT (A) 1.5 8 1.0 4 0.5 (1) (2) (3) 0 0 -60 -10 40 90 140 0 1 2 3 Tj(°C) VT (V) V = 1.27 V Fig. 9. Normalized holding current as a function of o R = 0.091 Ω junction temperature s (1) T = 125 °C; typical values j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 8 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 003aae832 1.6 VGT VGT(25 °C) 1.2 0.8 0.4 0 -60 -10 40 90 140 Tj(°C) Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 9 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 10. Package outline Fig. 12. Package outline DPAK (SOT428) BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 10 / 13

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BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 11 / 13

WeEn Semiconductors BT136S-600D 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 12 / 13

WeEn Semiconductors BT136S-600D 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................7 10. Package outline........................................................10 11. Legal information.....................................................11 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 15 September 2018 BT136S-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 13 / 13