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ICGOO电子元器件商城为您提供BT1308W-600D,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BT1308W-600D,115价格参考¥0.73-¥3.35。NXP SemiconductorsBT1308W-600D,115封装/规格:晶闸管 - TRIAC, TRIAC Logic - Sensitive Gate 600V 800mA Surface Mount SC-73。您可以下载BT1308W-600D,115参考资料、Datasheet数据手册功能说明书,资料中有BT1308W-600D,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRIAC SENS GATE 600V 800MA SC73双向可控硅 Thyristor TRIAC 600V 10A 4-Pin (3+Tab)

产品分类

双向可控硅分离式半导体

GateTriggerCurrent-Igt

7 mA

GateTriggerVoltage-Vgt

0.9 V

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,双向可控硅,NXP Semiconductors BT1308W-600D,115-

数据手册

点击此处下载产品Datasheet

产品型号

BT1308W-600D,115

三端双向可控硅类型

逻辑 - 灵敏栅极

不重复通态电流

10 A

产品种类

双向可控硅

供应商器件封装

SC-73

保持电流Ih最大值

10 mA

关闭状态漏泄电流(在VDRMIDRM下)

0.1 mA

其它名称

934060158115
BT1308W-600D T/R
BT1308W-600D T/R-ND

包装

带卷 (TR)

商标

NXP Semiconductors

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-261-4,TO-261AA

封装/箱体

SC-73-4

工厂包装数量

1000

开启状态RMS电流-ItRMS

0.8 A

开启状态电压

1.35 V

最大工作温度

+ 125 C

最小工作温度

- 40 C

栅极触发电压-Vgt

0.9 V

栅极触发电流-Igt

7 mA

标准包装

1,000

电压-断态

600V

电压-栅极触发(Vgt)(最大值)

2V

电流-不重复浪涌50、60Hz(Itsm)

9A,10A

电流-保持(Ih)(最大值)

10mA

电流-栅极触发(Igt)(最大值)

5mA

电流-通态(It(RMS))(最大值)

800mA

配置

单一

额定重复关闭状态电压VDRM

600 V

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PDF Datasheet 数据手册内容提取

BT1308W-600D 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drivers and microcontrollers • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate 3. Applications • AC Fan controller • General purpose low power phase control • General purpose low power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - - 0.8 A T(RMS) sp Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 9 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 10 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 1 5 mA GT D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2+ G-; - 2 5 mA D T T = 25 °C; Fig. 9 j

WeEn Semiconductors BT1308W-600D 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G+; - 4 7 mA D T T = 25 °C; Fig. 9 j I holding current V = 12 V; T = 25 °C; Fig. 11 - 1 10 mA H D j V on-state voltage I = 0.85 A; T = 25 °C; Fig. 12 - 1.35 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 110 °C; (V = 67% 30 45 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 600 V; T = 50 °C; dI /dt = 0.3 A/ - 5 - V/µs com D j com commutating voltage ms; I = 0.84 A; gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 2 T2 main terminal 2 G sym051 3 G gate 1 2 3 4 T2 main terminal 2 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT1308W-600D SC-73 plastic surface-mounted package with increased heatsink; 4 SOT223 leads BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 2 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; Fig. 2; - 0.8 A T(RMS) sp Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 9 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 10 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 0.32 A²s p dI /dt rate of rise of on-state I = 20 mA; T2+ G+ - 50 A/µs T G current I = 20 mA; T2+ G- - 50 A/µs G I = 20 mA; T2- G- - 50 A/µs G I = 20 mA; T2- G+ - 10 A/µs G I peak gate current - 1 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.1 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aab489 003aab487 6 1 IT(RMS) IT(RMS) (A) (A) 0.8 4 0.6 0.4 2 0.2 0 0 10-2 10-1 1 10 -50 0 50 100 150 surgeduration(s) Tsp(°C) f = 50 Hz; T = 107 °C sp Fig. 2. RMS on-state current as a function of solder Fig. 1. RMS on-state current as a function of surge point temperature; maximum values duration; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 3 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aac209 1.2 conduction form α=180° angle factor Ptot (degrees) a 120° (W) 30 4 90° 60 2.8 α 0.8 90 2.2 60° 120 1.9 180 1.57 30° 0.4 0.0 0 0.2 0.4 0.6 0.8 1 IT(RMS)(A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aac207 12 ITSM (A) 8 4 IT ITSM t 1/f Tj(init)=25°Cmax 0 1 10 102 103 numberofcycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 4 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 103 003aac208 ITSM IT ITSM (A) t tp Tj(init)=25°Cmax 102 (1) (2) 10 10-5 10-4 10-3 10-2 10-1 tp(s) t ≤ 20 ms p (1) dI /dt limit T (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 5 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 15 K/W th(j-sp) from junction to solder point R thermal resistance full cycle; for minimum footprint; Fig. 7 - 156 - K/W th(j-a) from junction to full cycle; for pad area; Fig. 8 - 70 - K/W ambient free air 102 003aac210 Zth(j-sp) (K/W) 10 1 P 10-1 tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 6 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 3.8min 36 1.5 min 18 6.3 60 4.6 4.5 9 1.5 2.3 min (3×) 10 1.5 min 4.6 001aab508 7 All dimensions are in mm 15 Fig. 7. Minimum footprint SOT223 50 001aab509 All dimensions are in mm Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 um thick) Fig. 8. Printed circuit board pad area: SOT223 BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 7 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 1 5 mA GT D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2+ G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G+; - 4 7 mA D T T = 25 °C; Fig. 9 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 1 10 mA L D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2+ G-; - 5 10 mA D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2- G-; - 1 10 mA D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2- G+; - 2 10 mA D G T = 25 °C; Fig. 10 j I holding current V = 12 V; T = 25 °C; Fig. 11 - 1 10 mA H D j V on-state voltage I = 0.85 A; T = 25 °C; Fig. 12 - 1.35 1.6 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.9 1.5 V GT D T j Fig. 13 V = 600 V; I = 0.1 A; T = 110 °C; 0.1 0.7 - V D T j Fig. 13 I off-state current V = 600 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 110 °C; (V = 67% 30 45 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 600 V; T = 50 °C; dI /dt = 0.3 A/ - 5 - V/µs com D j com commutating voltage ms; I = 0.84 A; gate open circuit T t gate-controlled turn-on I = 1 A; V = 600 V; I = 25 mA; dI / - 2 - µs gt TM D G G time dt = 5 A/µs BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 8 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aaa030 003aaa031 3 3 IGT IL IGT(25°C) IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 1 (4) 0 0 -60 -10 40 90 140 -60 -10 40 90 140 Tj (°C) Tj (°C) (1) T2+ G+ Fig. 10. Normalized latching current as a function of (2) T2- G+ junction temperature (3) T2- G- (4) T2+ G- Fig. 9. Normalized gate trigger current as a function of junction temperature 003aaa032 003aab486 2.0 1.6 IH IT IH(25°C) (A) 1.5 1.2 1.0 0.8 (1) (2) (3) 0.5 0.4 0 0 -60 -10 40 90 140 0 0.4 0.8 1.2 1.6 2 Tj (°C) VT(V) V = 1.171 V; R = 0.5125 Ω Fig. 11. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 12. On-state current as a function of on-state voltage BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 9 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aaa039 1.6 VGT VGT(25°C) 1.2 0.8 0.4 0 -60 -10 40 90 140 Tj (°C) Fig. 13. Normalized gate trigger voltage as a function of junction temperature BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 10 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 10. Package outline Plasticsurface-mountedpackagewithincreasedheatsink;4leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detailX e 0 2 4mm scale DIMENSIONS(mmaretheoriginaldimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 04-11-10 SOT223 SC-73 06-03-16 Fig. 14. Package outline SC-73 (SOT223) BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 11 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no Objective Development This document contains data from liability for inclusion and/or use of WeEn Semiconductors products in such [short] data the objective specification for product equipment or applications and therefore such inclusion and/or use is at the sheet development. customer’s own risk. Preliminary Qualification This document contains data from the Quick reference data — The Quick reference data is an extract of the [short] data preliminary specification. product data given in the Limiting values and Characteristics sections of this sheet document, and as such is not complete, exhaustive or legally binding. Product Production This document contains the product Applications — Applications that are described herein for any of these [short] data specification. products are for illustrative purposes only. WeEn Semiconductors makes sheet no representation or warranty that such applications will be suitable for the specified use without further testing or modification. [1] Please consult the most recently issued document before initiating or Customers are responsible for the design and operation of their applications completing a design. and products using WeEn Semiconductors products, and WeEn [2] The term 'short data sheet' is explained in section "Definitions". Semiconductors accepts no liability for any assistance with applications or [3] The product status of device(s) described in this document may have customer product design. It is customer’s sole responsibility to determine changed since this document was published and may differ in case of whether the WeEn Semiconductors product is suitable and fit for the multiple devices. The latest product status information is available on customer’s applications and products planned, as well as for the planned the Internet at URL http://www.ween-semi.com. application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Definitions WeEn Semiconductors does not accept any liability related to any default, Draft — The document is a draft version only. The content is still under damage, costs or problem which is based on any weakness or default internal review and subject to formal approval, which may result in in the customer’s applications or products, or the application or use by modifications or additions. WeEn Semiconductors does not give any customer’s third party customer(s). Customer is responsible for doing all representations or warranties as to the accuracy or completeness of necessary testing for the customer’s applications and products using WeEn information included herein and shall have no liability for the consequences Semiconductors products in order to avoid a default of the applications of use of such information. and the products or of the application or use by customer’s third party Short data sheet — A short data sheet is an extract from a full data sheet customer(s). WeEn does not accept any liability in this respect. with the same product type number(s) and title. A short data sheet is Limiting values — Stress above one or more limiting values (as defined in intended for quick reference only and should not be relied upon to contain the Absolute Maximum Ratings System of IEC 60134) will cause permanent detailed and full information. For detailed and full information see the damage to the device. Limiting values are stress ratings only and (proper) relevant full data sheet, which is available on request via the local WeEn operation of the device at these or any other conditions above those Semiconductors sales office. In case of any inconsistency or conflict with the given in the Recommended operating conditions section (if present) or the short data sheet, the full data sheet shall prevail. Characteristics sections of this document is not warranted. Constant or Product specification — The information and data provided in a Product repeated exposure to limiting values will permanently and irreversibly affect data sheet shall define the specification of the product as agreed between the quality and reliability of the device. WeEn Semiconductors and its customer, unless WeEn Semiconductors and No offer to sell or license — Nothing in this document may be interpreted customer have explicitly agreed otherwise in writing. In no event however, or construed as an offer to sell products that is open for acceptance or the shall an agreement be valid in which the WeEn Semiconductors product grant, conveyance or implication of any license under any copyrights, patents is deemed to offer functions and qualities beyond those described in the or other industrial or intellectual property rights. Product data sheet. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior Disclaimers authorization from competent authorities. Limited warranty and liability — Information in this document is believed Non-automotive qualified products — Unless this data sheet expressly to be accurate and reliable. However, WeEn Semiconductors does not states that this specific WeEn Semiconductors product is automotive give any representations or warranties, expressed or implied, as to the qualified, the product is not suitable for automotive use. It is neither qualified accuracy or completeness of such information and shall have no liability for nor tested in accordance with automotive testing or application requirements. the consequences of use of such information. WeEn Semiconductors takes WeEn Semiconductors accepts no liability for inclusion and/or use of non- no responsibility for the content in this document if provided by an information automotive qualified products in automotive equipment or applications. source outside of WeEn Semiconductors. In the event that customer uses the product for design-in and use in In no event shall WeEn Semiconductors be liable for any indirect, incidental, automotive applications to automotive specifications and standards, punitive, special or consequential damages (including - without limitation - customer (a) shall use the product without WeEn Semiconductors’ warranty lost profits, lost savings, business interruption, costs related to the removal of the product for such automotive applications, use and specifications, and or replacement of any products or rework charges) whether or not such (b) whenever customer uses the product for automotive applications beyond damages are based on tort (including negligence), warranty, breach of WeEn Semiconductors’ specifications such use shall be solely at customer’s contract or any other legal theory. own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer Notwithstanding any damages that customer might incur for any reason design and use of the product for automotive applications beyond WeEn whatsoever, WeEn Semiconductors’ aggregate and cumulative liability Semiconductors’ standard warranty and WeEn Semiconductors’ product towards customer for the products described herein shall be limited in specifications. accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 12 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 13 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................8 10. Package outline........................................................11 11. Legal information.....................................................12 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 15 September 2018 BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 14 / 14

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