BT1308W-600D 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drivers and microcontrollers • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate 3. Applications • AC Fan controller • General purpose low power phase control • General purpose low power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; - - 0.8 A T(RMS) sp Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; - - 9 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p full sine wave; T = 25 °C; - - 10 A j(init) t = 16.7 ms p T junction temperature - - 125 °C j Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 1 5 mA GT D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2+ G-; - 2 5 mA D T T = 25 °C; Fig. 9 j

WeEn Semiconductors BT1308W-600D 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V; I = 0.1 A; T2- G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G+; - 4 7 mA D T T = 25 °C; Fig. 9 j I holding current V = 12 V; T = 25 °C; Fig. 11 - 1 10 mA H D j V on-state voltage I = 0.85 A; T = 25 °C; Fig. 12 - 1.35 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 110 °C; (V = 67% 30 45 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 600 V; T = 50 °C; dI /dt = 0.3 A/ - 5 - V/µs com D j com commutating voltage ms; I = 0.84 A; gate open circuit T 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 2 T2 main terminal 2 G sym051 3 G gate 1 2 3 4 T2 main terminal 2 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT1308W-600D SC-73 plastic surface-mounted package with increased heatsink; 4 SOT223 leads BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 2 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 107 °C; Fig. 1; Fig. 2; - 0.8 A T(RMS) sp Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 9 A TSM j(init) p state current Fig. 4; Fig. 5 full sine wave; T = 25 °C; t = 16.7 ms - 10 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 0.32 A²s p dI /dt rate of rise of on-state I = 20 mA; T2+ G+ - 50 A/µs T G current I = 20 mA; T2+ G- - 50 A/µs G I = 20 mA; T2- G- - 50 A/µs G I = 20 mA; T2- G+ - 10 A/µs G I peak gate current - 1 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.1 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j 003aab489 003aab487 6 1 IT(RMS) IT(RMS) (A) (A) 0.8 4 0.6 0.4 2 0.2 0 0 10-2 10-1 1 10 -50 0 50 100 150 surgeduration(s) Tsp(°C) f = 50 Hz; T = 107 °C sp Fig. 2. RMS on-state current as a function of solder Fig. 1. RMS on-state current as a function of surge point temperature; maximum values duration; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 3 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aac209 1.2 conduction form α=180° angle factor Ptot (degrees) a 120° (W) 30 4 90° 60 2.8 α 0.8 90 2.2 60° 120 1.9 180 1.57 30° 0.4 0.0 0 0.2 0.4 0.6 0.8 1 IT(RMS)(A) α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aac207 12 ITSM (A) 8 4 IT ITSM t 1/f Tj(init)=25°Cmax 0 1 10 102 103 numberofcycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 4 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 103 003aac208 ITSM IT ITSM (A) t tp Tj(init)=25°Cmax 102 (1) (2) 10 10-5 10-4 10-3 10-2 10-1 tp(s) t ≤ 20 ms p (1) dI /dt limit T (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 5 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle; Fig. 6 - - 15 K/W th(j-sp) from junction to solder point R thermal resistance full cycle; for minimum footprint; Fig. 7 - 156 - K/W th(j-a) from junction to full cycle; for pad area; Fig. 8 - 70 - K/W ambient free air 102 003aac210 Zth(j-sp) (K/W) 10 1 P 10-1 tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp(s) Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 6 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 3.8min 36 1.5 min 18 6.3 60 4.6 4.5 9 1.5 2.3 min (3×) 10 1.5 min 4.6 001aab508 7 All dimensions are in mm 15 Fig. 7. Minimum footprint SOT223 50 001aab509 All dimensions are in mm Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 um thick) Fig. 8. Printed circuit board pad area: SOT223 BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 7 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 1 5 mA GT D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2+ G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G-; - 2 5 mA D T T = 25 °C; Fig. 9 j V = 12 V; I = 0.1 A; T2- G+; - 4 7 mA D T T = 25 °C; Fig. 9 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 1 10 mA L D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2+ G-; - 5 10 mA D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2- G-; - 1 10 mA D G T = 25 °C; Fig. 10 j V = 12 V; I = 0.1 A; T2- G+; - 2 10 mA D G T = 25 °C; Fig. 10 j I holding current V = 12 V; T = 25 °C; Fig. 11 - 1 10 mA H D j V on-state voltage I = 0.85 A; T = 25 °C; Fig. 12 - 1.35 1.6 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T = 25 °C; - 0.9 1.5 V GT D T j Fig. 13 V = 600 V; I = 0.1 A; T = 110 °C; 0.1 0.7 - V D T j Fig. 13 I off-state current V = 600 V; T = 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 110 °C; (V = 67% 30 45 - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 600 V; T = 50 °C; dI /dt = 0.3 A/ - 5 - V/µs com D j com commutating voltage ms; I = 0.84 A; gate open circuit T t gate-controlled turn-on I = 1 A; V = 600 V; I = 25 mA; dI / - 2 - µs gt TM D G G time dt = 5 A/µs BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 8 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aaa030 003aaa031 3 3 IGT IL IGT(25°C) IL(25°C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 1 (4) 0 0 -60 -10 40 90 140 -60 -10 40 90 140 Tj (°C) Tj (°C) (1) T2+ G+ Fig. 10. Normalized latching current as a function of (2) T2- G+ junction temperature (3) T2- G- (4) T2+ G- Fig. 9. Normalized gate trigger current as a function of junction temperature 003aaa032 003aab486 2.0 1.6 IH IT IH(25°C) (A) 1.5 1.2 1.0 0.8 (1) (2) (3) 0.5 0.4 0 0 -60 -10 40 90 140 0 0.4 0.8 1.2 1.6 2 Tj (°C) VT(V) V = 1.171 V; R = 0.5125 Ω Fig. 11. Normalized holding current as a function of o s (1) T = 125 °C; typical values junction temperature j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 12. On-state current as a function of on-state voltage BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 9 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 003aaa039 1.6 VGT VGT(25°C) 1.2 0.8 0.4 0 -60 -10 40 90 140 Tj (°C) Fig. 13. Normalized gate trigger voltage as a function of junction temperature BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 10 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 10. Package outline Plasticsurface-mountedpackagewithincreasedheatsink;4leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detailX e 0 2 4mm scale DIMENSIONS(mmaretheoriginaldimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUEDATE VERSION IEC JEDEC JEITA PROJECTION 04-11-10 SOT223 SC-73 06-03-16 Fig. 14. Package outline SC-73 (SOT223) BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 11 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 12 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 13 / 14

WeEn Semiconductors BT1308W-600D 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................6 9. Characteristics..............................................................8 10. Package outline........................................................11 11. Legal information.....................................................12 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 15 September 2018 BT1308W-600D All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 15 September 2018 14 / 14

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